专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08097524B2 Lightly doped silicon carbide wafer and use thereof in high power devices 有权
标题翻译：轻掺杂碳化硅晶片及其在高功率器件中的应用
公开(公告)号：US08097524B2
公开(公告)日：2012-01-17
申请号：US12352793
申请日：2009-01-13
申请人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
发明人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
IPC分类号： C30B15/14
CPC分类号： H01L29/7395 , C30B25/00 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/0455 , H01L29/1608 , H01L29/66068 , Y10S438/931
摘要： A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm−3, and a concentration of transition metals impurities less than 5×1014 cm−3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.
摘要翻译：一种碳化硅单晶的制造方法。生长碳化硅单晶。该晶体的硼浓度小于5×1014cm-3，过渡金属杂质浓度小于5×1014cm-3。晶体中的固有缺陷被最小化。内在缺陷包括硅空位或碳空位。在包含任何气体氢气或氢气和惰性气体的混合物的气氛中，在高于700℃的温度下将晶体退火所需时间，使得本征缺陷和任何相关缺陷的密度降低到浓度足够低以使晶体在室温下达到至少50ns的所需载流子寿命。

2. 发明授权

US08803160B2 Lightly doped silicon carbide wafer and use thereof in high power devices 有权
标题翻译：轻掺杂碳化硅晶片及其在高功率器件中的应用
公开(公告)号：US08803160B2
公开(公告)日：2014-08-12
申请号：US13340192
申请日：2011-12-29
申请人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
发明人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
IPC分类号： H01L29/15
CPC分类号： H01L29/7395 , C30B25/00 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/0455 , H01L29/1608 , H01L29/66068 , Y10S438/931
摘要： A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns.
摘要翻译：一种半导体器件，包括用作具有正面和背面的衬底层的第一导电类型的漂移区。第一接触电极布置在漂移区的前侧。控制区域布置在前侧，并且控制至少第一导电类型的载流子注入漂移区。第二接触电极布置在漂移区的背面。漂移区布置成在第一和第二接触电极之间承载载流子。漂移区包括净载流子浓度小于1015cm-3且载流子寿命至少为50ns的碳化硅晶片。

3. 发明申请

US20090114924A1 LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES 有权
标题翻译：轻质硅碳化硅陶瓷及其在大功率器件中的应用
公开(公告)号：US20090114924A1
公开(公告)日：2009-05-07
申请号：US12352793
申请日：2009-01-13
申请人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
发明人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
IPC分类号： H01L31/0312 , C30B15/14 , H01L21/02
CPC分类号： H01L29/7395 , C30B25/00 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/0455 , H01L29/1608 , H01L29/66068 , Y10S438/931
摘要： A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm−3, and a concentration of transition metals impurities less than 5×1014 cm−3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.
摘要翻译：一种碳化硅单晶的制造方法。生长碳化硅单晶。晶体的硼浓度小于5×10 14 cm -3，过渡金属杂质浓度小于5×10 14 cm -3。晶体中的固有缺陷被最小化。内在缺陷包括硅空位或碳空位。在包含任何气体氢气或氢气和惰性气体的混合物的气氛中，在高于700℃的温度下将晶体退火所需时间，使得本征缺陷和任何相关缺陷的密度降低到浓度足够低以使晶体在室温下达到至少50ns的所需载流子寿命。

4. 发明申请

US20120091471A1 LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES 有权
标题翻译：轻质硅碳化硅陶瓷及其在大功率器件中的应用
公开(公告)号：US20120091471A1
公开(公告)日：2012-04-19
申请号：US13340192
申请日：2011-12-29
申请人： Alexandre ELLISON , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
发明人： Alexandre ELLISON , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
IPC分类号： H01L29/739 , H01L29/24
CPC分类号： H01L29/7395 , C30B25/00 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/0455 , H01L29/1608 , H01L29/66068 , Y10S438/931
摘要： A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns.
摘要翻译：一种半导体器件，包括用作具有正面和背面的衬底层的第一导电类型的漂移区。第一接触电极布置在漂移区的前侧。控制区域布置在前侧，并且控制至少第一导电类型的载流子注入漂移区。第二接触电极布置在漂移区的背面。漂移区布置成在第一和第二接触电极之间承载载流子。漂移区包括净载流子浓度小于1015cm-3且载流子寿命至少为50ns的碳化硅晶片。

5. 发明授权

US07482068B2 Lightly doped silicon carbide wafer and use thereof in high power devices 有权
标题翻译：轻掺杂碳化硅晶片及其在高功率器件中的应用
公开(公告)号：US07482068B2
公开(公告)日：2009-01-27
申请号：US10526059
申请日：2003-08-22
申请人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
发明人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
IPC分类号： B32B18/00 , C30B23/00 , H01L31/0312 , H01L29/00 , H01L29/30 , H01L29/12
CPC分类号： H01L29/7395 , C30B25/00 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/0455 , H01L29/1608 , H01L29/66068 , Y10S438/931
摘要： A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns at room temperature.
摘要翻译：具有n型或p型导电性的均匀碳化硅单晶。晶体的净载流子浓度小于1015cm-3，载流子寿命在室温下至少为50ns。

6. 发明授权

US07018597B2 High resistivity silicon carbide single crystal 有权
标题翻译：高电阻率碳化硅单晶
公开(公告)号：US07018597B2
公开(公告)日：2006-03-28
申请号：US10281173
申请日：2002-10-28
申请人： Alexandre Ellison , Nguyen Tien Son , Björn Magnusson , Erik Janzén
发明人： Alexandre Ellison , Nguyen Tien Son , Björn Magnusson , Erik Janzén
IPC分类号： C30B29/36
CPC分类号： H01L21/0445 , C30B25/00 , C30B29/36
摘要： The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.
摘要翻译：本发明的目的是提供具有适于随后的器件制造的电性能和结构质量的高电阻率碳化硅衬底，例如高频器件，使得器件可以呈现稳定和线性的特性并提供高电阻率具有低密度的结构缺陷的碳化硅衬底和其电阻率的基本受控均匀的径向分布。

7. 发明授权

US08492772B2 Homoepitaxial growth of SiC on low off-axis SiC wafers 有权
标题翻译： SiC在低离轴SiC晶圆上的同质外延生长
公开(公告)号：US08492772B2
公开(公告)日：2013-07-23
申请号：US12402551
申请日：2009-03-12
申请人： Alexandre Ellison , Christer Hallin , Björn Magnusson , Peder Bergman
发明人： Alexandre Ellison , Christer Hallin , Björn Magnusson , Peder Bergman
IPC分类号： H01L29/15
CPC分类号： C30B29/36 , C30B25/02 , C30B25/18 , C30B25/20 , H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02447 , H01L21/02502 , H01L21/02529 , H01L21/0254 , H01L21/02554 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L21/02634 , H01L21/02658 , Y10S438/931
摘要： A wafer including a SiC substrate having a surface that is inclined relative to a (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, a SiC homoepitaxial device layer, and a SiC homoepitaxial boundary layer having a thickness up to 1 μm arranged between the substrate and the device layer. The boundary layer has been grown on the substrate under an atmosphere of lower supersaturation than when forming the device layer and at a C/Si ratio above 1.
摘要翻译：一种晶片，包括具有相对于（0001）基面以高于0.1度但小于1度的角度倾斜的表面的SiC衬底，SiC同质外延器件层和SiC同质外延边界层，其具有至多 1mum布置在衬底和器件层之间。边界层已经在低于过饱和的气氛下在衬底上生长，而不是形成器件层并且C / Si比高于1。

8. 发明授权

US07531433B2 Homoepitaxial growth of SiC on low off-axis SiC wafers 有权
标题翻译： SiC在低离轴SiC晶圆上的同质外延生长
公开(公告)号：US07531433B2
公开(公告)日：2009-05-12
申请号：US11180611
申请日：2005-07-14
申请人： Alexandre Ellison , Christer Hallin , Björn Magnusson , Peder Bergman
发明人： Alexandre Ellison , Christer Hallin , Björn Magnusson , Peder Bergman
IPC分类号： H01L21/20
CPC分类号： C30B29/36 , C30B25/02 , C30B25/18 , C30B25/20 , H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02447 , H01L21/02502 , H01L21/02529 , H01L21/0254 , H01L21/02554 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L21/02634 , H01L21/02658 , Y10S438/931
摘要： A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 μm.
摘要翻译：在SiC衬底上制造与衬底相同的多型式的SiC同质外延层的方法。这些层在SiC衬底的表面上生长，其中表面相对于（0001）基面以高于0.1度但小于1度的角度倾斜。通过形成厚度达1um的边界层开始同质外延生长。

9. 发明授权

US07554653B2 Multitarget 有权
标题翻译：多目标
公开(公告)号：US07554653B2
公开(公告)日：2009-06-30
申请号：US11607096
申请日：2006-12-01
申请人： Björn Magnusson
发明人： Björn Magnusson
IPC分类号： G01C3/08
CPC分类号： G01C3/00
摘要： An electro optic distance measurement apparatus using time of flight measurements and a method therefore are provided for determining a distance to a target of two or more targets located along a common line of sight from the distance measurement apparatus. Approximate distances to the two or more targets are determined by means of the distance measurement apparatus, one of the two or more targets is selected, and an accurate distance to the selected target is determined by means of the distance measurement apparatus.
摘要翻译：提供了一种使用飞行时间测量的电光距离测量装置和一种方法，用于确定距距离测量装置沿着公共视线位于两个或更多个目标位置的距离。通过距离测量装置确定与两个或更多个目标的近似距离，选择两个或更多目标中的一个，并且通过距离测量装置确定到所选目标的准确距离。

10. 发明授权

US08396681B2 Prediction algorithm for scanning an object 有权
标题翻译：用于扫描对象的预测算法
公开(公告)号：US08396681B2
公开(公告)日：2013-03-12
申请号：US12448973
申请日：2007-01-25
申请人： Set Svanholm , Grégory Lepere , Guillaume David , Fredrik Gylesjö , Sven Johansson , Björn Magnusson
发明人： Set Svanholm , Grégory Lepere , Guillaume David , Fredrik Gylesjö , Sven Johansson , Björn Magnusson
IPC分类号： G01C17/38 , G01C1/00 , G01B11/14
CPC分类号： G01B11/00 , G01C15/00 , G01S17/42
摘要： A distance measuring measurement instrument and a method for such a station for scanning a surface or volume of an object are disclosed. The measurement instrument includes a position calculating circuit adapted to calculate position data including at least horizontal and vertical angle and distance between the measurement instrument and the object. A plurality of points in each of a number of subsets of a scanning area of the object during a measurement session and, at detection of a new point in the new subset, information related to at least one point having a corresponding location in at least one preceding subset is used, wherein the preceding subset being adjacent to the new subset.
摘要翻译：公开了一种距离测量仪器和用于扫描物体的表面或体积的这种站的方法。测量仪器包括位置计算电路，其适于计算至少包括水平和垂直角度以及测量仪器和物体之间的距离的位置数据。在测量会话期间在对象的扫描区域的多个子集中的多个子集中的每一个中的多个点，并且在检测到新子集中的新点时，与至少一个点相关联的信息具有至少一个使用前一子集，其中前述子集与新子集相邻。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式