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1. 发明授权

US07591902B2 Recirculation and reuse of dummy dispensed resist 有权
标题翻译：虚拟分配抗蚀剂的再循环和再利用
公开(公告)号：US07591902B2
公开(公告)日：2009-09-22
申请号：US11615080
申请日：2006-12-22
申请人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Ursula Q. Quinto , Michael T. Templeton
发明人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Ursula Q. Quinto , Michael T. Templeton
IPC分类号： B05B1/28 , B05B15/04 , B05B3/00 , B05C11/00
CPC分类号： H01L21/6715 , B05B15/50 , B05C11/08
摘要： The present invention provides a system and methodology for dummy-dispensing resist though a dispense head while mitigating waste associated with the dummy-dispense process. The dummy dispensed resist is returned to a reservoir from which it was taken. Between substrate applications, the dispense head can be positioned to dispense resist into a return line. The flow of resist from the dispense head keeps resist from drying at the dispense head. By funneling the dummy-dispensed resist into a return line with low volume, for example, waste from the dummy-dispensing process can be mitigated.
摘要翻译：本发明提供了一种用于分配头的虚拟分配抗蚀剂的系统和方法，同时减轻与虚拟分配过程相关的废物。虚拟分配的抗蚀剂返回到被采集的储存器。在基板应用之间，分配头可以被定位成将抗蚀剂分配到返回线中。来自分配头的抗蚀剂的流动在分配头保持抗干燥。通过将虚拟分配的抗蚀剂漏出到具有低体积的返回管线中，例如，可以减轻来自虚拟分配过程的废物。

2. 发明授权

US07153364B1 Re-circulation and reuse of dummy-dispensed resist 失效
标题翻译：虚拟分配抗蚀剂的再循环和再利用
公开(公告)号：US07153364B1
公开(公告)日：2006-12-26
申请号：US10000208
申请日：2001-10-23
申请人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Ursula Q. Quinto , Michael K. Templeton
发明人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Ursula Q. Quinto , Michael K. Templeton
IPC分类号： B05B1/28 , B05B15/04 , B05B3/00
CPC分类号： H01L21/6715 , B05B15/50 , B05C11/08
摘要： The present invention provides a system and methodology for dummy-dispensing resist though a dispense head while mitigating waste associated with the dummy-dispense process. The dummy dispensed resist is returned to a reservoir from which it was taken. Between substrate applications, the dispense head can be positioned to dispense resist into a return line. The flow of resist from the dispense head keeps resist from drying at the dispense head. By funneling the dummy-dispensed resist into a return line with low volume, for example, waste from the dummy-dispensing process can be mitigated.
摘要翻译：本发明提供了一种用于分配头的虚拟分配抗蚀剂的系统和方法，同时减轻与虚拟分配过程相关的废物。虚拟分配的抗蚀剂返回到被采集的储存器。在基板应用之间，分配头可以被定位成将抗蚀剂分配到返回线中。来自分配头的抗蚀剂的流动在分配头保持抗干燥。通过将虚拟分配的抗蚀剂漏出到具有低体积的返回管线中，例如，可以减轻来自虚拟分配过程的废物。

3. 发明授权

US06612319B1 Low defect EBR nozzle 有权
标题翻译：低缺陷EBR喷嘴
公开(公告)号：US06612319B1
公开(公告)日：2003-09-02
申请号：US09634670
申请日：2000-08-08
申请人： Bharath Rangarajan , Khoi A. Phan , Ursula Q. Quinto
发明人： Bharath Rangarajan , Khoi A. Phan , Ursula Q. Quinto
IPC分类号： B08B302
CPC分类号： H01L21/6708 , B05B15/52 , B05B15/531 , B05B15/55 , Y10S134/902
摘要： An edge bead removal system and method is provided that employs a nozzle for applying edge bead removal solvent to an edge bead of a photoresist material layer disposed on a wafer. The nozzle includes a liquid chamber that can be connected to a supply of edge bead removal and an air supply chamber that can be connected to a supply of air. The supply of air is isolated from the liquid supply chamber during application of the edge bead removal solvent and communicates via the air supply chamber to the liquid supply chamber after application of the edge bead removal solvent thus removing any droplets of edge bead removal solvent remaining in the nozzle tip. A system is also provided that includes an absorbent material that moves from a rest position, during application of the edge bead removal solvent, to an absorbing position that removes or catches any droplets of edge bead removal solvent remaining on the nozzle tip after application of the edge bead removal solvent is completed. A nozzle is also provided that includes a liquid supply chamber with an inner cylindrical surface that is made of or coated with either a hydrophobic material and/or a hydrophilic material.
摘要翻译：提供了一种边缘珠去除系统和方法，其采用用于将边缘珠去除溶剂施加到设置在晶片上的光致抗蚀剂材料层的边缘珠的喷嘴。喷嘴包括可以连接到边缘珠移除的供应的液体室和可以连接到空气供应的空气供应室。在施加边缘珠去除溶剂期间，空气的供应与液体供应室隔离，并且在施加边缘珠粒去除溶剂之后通过供气室与液体供应室连通，从而除去剩余的边缘珠去除溶剂中的任何液滴喷嘴尖端。还提供了一种系统，其包括吸收材料，其在施加边缘珠去除溶剂期间从静止位置移动到吸收位置，该吸收位置在施加之后移除或捕获留在喷嘴尖端上的边缘珠去除溶剂的任何液滴边缘珠去除溶剂完成。还提供了一种喷嘴，其包括具有由疏水材料和/或亲水材料制成或涂覆有内部圆柱形表面的液体供应室。

4. 发明授权

US07034930B1 System and method for defect identification and location using an optical indicia device 失效
标题翻译：使用光标记设备进行缺陷识别和定位的系统和方法
公开(公告)号：US07034930B1
公开(公告)日：2006-04-25
申请号：US09634302
申请日：2000-08-08
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/956
摘要： A measuring system and method are provided for defect identification and location. The system an optical measurement device adapted to view a workpiece along an optical path, and an optical indicia device located in the optical path between the workpiece and the measurement device, which is adapted to provide location information to the system or a user. The location information can be used to correlate defect locations identified in a wafer before and after a process step, as well as between two different wafers. The optical indicia device may further allow the use of field comparison techniques in identifying and locating defects in a blank or unpatterned workpiece. The indicia device may comprise, for example, a transparent member having a grid or other optical indicia patterned thereon, allowing inspection of the workpiece with reference to the optical indicia pattern.
摘要翻译：提供了一种用于缺陷识别和定位的测量系统和方法。该系统适于沿着光路观察工件，以及位于工件和测量装置之间的光路中的光学标记装置，其适于向系统或用户提供位置信息。位置信息可用于将在晶片中识别的缺陷位置与处理步骤之间以及两个不同的晶片之间相关联。光学标记装置还可以允许使用现场比较技术来识别和定位空白或未图案化的工件中的缺陷。标记装置可以包括例如具有图案化的网格或其他光学标记的透明构件，允许参考光标记图案检查工件。

5. 发明授权

US06999254B1 Refractive index system monitor and control for immersion lithography 有权
$Refractive index system monitor and control for immersion lithography$
标题翻译：折射率系统监测和控制浸没光刻
公开(公告)号：US06999254B1
公开(公告)日：2006-02-14
申请号：US10967845
申请日：2004-10-18
申请人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G02B7/00
CPC分类号： G03F7/70341
摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.
摘要翻译：公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。已知的光栅结构被构建在衬底上。折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

6. 发明授权

US06809793B1 System and method to monitor reticle heating 有权
标题翻译：监控标线加热的系统和方法
公开(公告)号：US06809793B1
公开(公告)日：2004-10-26
申请号：US10050456
申请日：2002-01-16
申请人： Khoi A. Phan , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
发明人： Khoi A. Phan , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
IPC分类号： G03B2752
CPC分类号： G03F7/70558 , G03F7/70875
摘要： A system and method are disclosed which enable temperature of a substrate, such as mask or reticle, to be monitored and/or regulated. One or more temperature sensors are associated with the substrate to sense substrate temperature during exposure by an exposing source. The sensed temperature is used to control one or more process parameters of the exposure to help maintain the substrate at or below a desired temperature.
摘要翻译：公开了一种能够监测和/或调节衬底（例如掩模或掩模版）的温度的系统和方法。一个或多个温度传感器与衬底相关联以在曝光源曝光期间检测衬底温度。所感测的温度用于控制曝光的一个或多个工艺参数，以帮助将衬底维持在或低于所需温度。

7. 发明授权

US06507474B1 Using localized ionizer to reduce electrostatic charge from wafer and mask 有权
标题翻译：使用局部电离器来减少晶片和掩模的静电电荷
公开(公告)号：US06507474B1
公开(公告)日：2003-01-14
申请号：US09597126
申请日：2000-06-19
申请人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bryan K. Choo , Bharath Rangarajan
发明人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bryan K. Choo , Bharath Rangarajan
IPC分类号： H01T2300
CPC分类号： G03F7/70616 , G03F7/70941
摘要： One aspect of the present invention elates to a method of reducing electrostatic charges on a patterned photoresist to improve evaluation of the developed photoresist, involving the steps of evaluating the patterned photoresist to determine if electrostatic charges exist thereon; positioning an ionizer near the patterned photoresist, the ionizer generating ions thereby reducing the electrostatic charges on the patterned photoresist; and evaluating the patterned photoresist with an electron beam. Another aspect of the present invention relates to a system for reducing electrostatic charges on a patterned photoresist, containing a charge sensor for determining if electrostatic charges exist on the patterned photoresist and measuring the electrostatic charges; an ionizer positioned near the patterned photoresist having electrostatic charges thereon for reducing the electrostatic charges on the patterned photoresist; a controller for setting at least one of time of ion generation and amount of ion generation by the ionizer, the controller coupled to the charge sensor and the ionizer; and a scanning electron microscope or an atomic force microscope for evaluating the patterned photoresist having reduced electrostatic charges thereon with an electron beam.
摘要翻译：本发明的一个方面是提供减少图案化光致抗蚀剂上的静电电荷以改进对显影光致抗蚀剂的评估的方法，包括评估图案化光致抗蚀剂以确定静电电荷是否存在于其中的步骤; 在图案化的光致抗蚀剂附近定位电离器，离子发生器产生离子，从而减少图案化光致抗蚀剂上的静电电荷; 并用电子束评估图案化的光致抗蚀剂。本发明的另一方面涉及一种用于减少图案化光致抗蚀剂上的静电电荷的系统，其包含用于确定图案化光致抗蚀剂上是否存在静电电荷并测量静电电荷的电荷传感器; 位于图案化的光致抗蚀剂附近的电离器，其上具有静电电荷，用于减少图案化光致抗蚀剂上的静电电荷; 用于设置离子发生时间和离子发生量中的至少一个的控制器，耦合到电荷传感器和离子发生器的控制器; 以及扫描电子显微镜或原子力显微镜，用于用电子束评估其上具有降低的静电电荷的图案化光致抗蚀剂。

8. 发明授权

US06444373B1 Modification of mask layout data to improve mask fidelity 有权
标题翻译：修改掩模布局数据以提高掩码保真度
公开(公告)号：US06444373B1
公开(公告)日：2002-09-03
申请号：US09596954
申请日：2000-06-16
申请人： Ramkumar Subramanian , Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan
发明人： Ramkumar Subramanian , Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan
IPC分类号： G03F900
CPC分类号： G03F1/70 , G03F7/70433 , G03F7/70441
摘要： The present invention relates to a system and method of modifying mask layout data to improve the fidelity of mask manufacture. The system and method include determining the difference between the mask layout design and the mask features as written, and generating sizing corrections. The sizing corrections can be used to modify the mask layout data, and/or stored in a database.
摘要翻译：本发明涉及一种修改掩模布局数据以提高掩模制造的保真度的系统和方法。该系统和方法包括确定掩模布局设计和掩模特征之间的写入差异，并产生尺寸校正。尺寸校正可用于修改掩模布局数据和/或存储在数据库中。

9. 发明授权

US06423479B1 Cleaning carbon contamination on mask using gaseous phase 失效
标题翻译：使用气相清洁面罩上的碳污染
公开(公告)号：US06423479B1
公开(公告)日：2002-07-23
申请号：US09495165
申请日：2000-01-31
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： G03F726
CPC分类号： G03F1/82
摘要： In one embodiment, the present invention relates to a method of processing a lithography mask, involving the steps of exposing a lithography substrate with actinic radiation through the lithography mask in a chamber; removing the lithography mask from the chamber, wherein the lithography mask contains carbon contaminants; and contacting the lithography mask with sulfur trioxide thereby reducing the carbon contaminants thereon.
摘要翻译：在一个实施例中，本发明涉及一种处理光刻掩模的方法，包括以下步骤：将具有光化辐射的光刻基底通过室中的光刻掩模曝光; 从所述腔室去除所述光刻掩模，其中所述光刻掩模含有碳污染物; 并使光刻掩模与三氧化硫接触，从而减少其上的碳污染物。

10. 发明授权

US06371134B1 Ozone cleaning of wafers 有权
公开(公告)号：US06371134B1
公开(公告)日：2002-04-16
申请号：US09495014
申请日：2000-01-31
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： B08B700
摘要： In one embodiment, the present invention relates to a method of processing a semiconductor structure, involving the steps of providing the semiconductor structure having a patterned resist thereon; stripping the patterned resist from the semiconductor structure, wherein an amount of carbon containing resist debris remain on the semiconductor structure; and contacting the semiconductor structure with ozone thereby reducing the amount of carbon containing resist debris thereon.

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