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    • 3. 发明授权
    • Projection objective for microlithography
    • 微光刻的投影目标
    • US09217932B2
    • 2015-12-22
    • US13537892
    • 2012-06-29
    • Bernd Geh
    • Bernd Geh
    • G03B27/42G03F7/20
    • G03F7/702G03F7/703G03F7/70783
    • A projection objective for imaging a pattern arranged in an object surface of the projection objective into an image surface of the projection objective with a demagnified imaging scale has a plurality of optical elements which are arranged along an optical axis of the projection objective and are configured so that a defined image field curvature of the projection objective is set such that an object surface that is curved convexly with respect to the projection objective is imaged into a planar image surface. Such projection objective, with a suitable setting of the object surface curvature, avoids the disturbing effect on the image quality that would otherwise result from gravitation-dictated bending of a mask.
    • 用于将布置在投影物镜的物体表面中的图案成像成具有缩小的成像刻度的投影物镜的图像表面的投影物镜具有沿着投影物镜的光轴布置的多个光学元件, 设置投影物镜的定义的图像场曲率,使得相对于投影物镜凸出弯曲的物体表面被成像为平面图像表面。 具有对象表面曲率的适当设置的这种投影物镜避免了由于掩模的重力指定弯曲而导致的图像质量的干扰效应。
    • 4. 发明授权
    • Lithographic processing optimization based on hypersampled correlations
    • 基于超采样相关的平滑处理优化
    • US08120748B2
    • 2012-02-21
    • US11709188
    • 2007-02-22
    • Bernd GehRoger IrwinEric Anthony JandaDavid Merritt Phillips
    • Bernd GehRoger IrwinEric Anthony JandaDavid Merritt Phillips
    • G03B27/52G03B27/42G03B27/44G03B27/32
    • G03F7/70625G03F7/70425
    • A method of optimizing lithographic processing to achieve substrate uniformity, is presented herein. In one embodiment, The method includes deriving hyper-sampled correlation information indicative of photoresist behavior for a plurality of wafer substrates processed at pre-specified target processing conditions. The derivation includes micro-exposing subfields of the substrates with a pattern, processing the substrates at the various target conditions, determining photoresist-related characteristics of the subfields (e.g., Bossung curvatures), and extracting correlation information regarding the subfield characteristics and the different target processing conditions to relate the target conditions as a function of subfield characteristics. The method then detects non-uniformities in a micro-exposed subsequent substrate processed under production-level processing conditions and exploits the correlation information to adjust the production-level conditions and achieve uniformity across the substrate.
    • 本文给出了优化平版印刷加工以实现基板均匀性的方法。 在一个实施例中,该方法包括导出指示在预定目标处理条件下处理的多个晶片衬底的光致抗蚀剂行为的超采样相关信息。 该衍生包括具有图案的基板的微曝光子场,在各种目标条件下处理基板,确定子场的光致抗蚀剂相关特性(例如,Bossung曲率),以及提取关于子场特性和不同目标的相关信息 处理条件将目标条件作为子场特征的函数进行关联。 然后,该方法检测在生产级处理条件下处理的微暴露的随后的衬底中的不均匀性,并利用相关信息来调整生产水平条件并实现衬底上的均匀性。
    • 5. 发明授权
    • Method, program product and apparatus for obtaining short-range flare model parameters for lithography simulation tool
    • 用于获得光刻模拟工具的短程火炬模型参数的方法,程序产品和设备
    • US07818151B2
    • 2010-10-19
    • US11415423
    • 2006-05-02
    • Tamer CoskunSangbong ParkJang Fung ChenBernd Geh
    • Tamer CoskunSangbong ParkJang Fung ChenBernd Geh
    • G06F17/50
    • G03F7/70941G03F7/705
    • A process of obtaining short-range flare model parameters representing a short-range flare which degrades a contrast of an image generated by a lithography tool, is disclosed. Short-range flare is measured from the image to obtain measured short-range flare data. A simulation is performed based on short-range flare model parameters to obtain simulated short-range flare data. The simulated short-range flare data is compared with the measured short range flare data. It is determined whether the short-range flare model parameters used in the simulation is appropriate based on the comparison result. The short-range flare model parameters is optimized according to the measured short-range data and the simulated short-range flare data if the short-range flare model parameters used for the simulation is not appropriate.
    • 公开了一种获得表示短距离火炬的短距离火炬模型参数的过程,其降低了由光刻工具产生的图像的对比度。 从图像中测量短程光晕,以获得测量的短距离闪光数据。 基于短距离火炬模型参数进行模拟,以获得模拟的短距离火炬数据。 将模拟的短程火炬数据与测量的短距离火炬数据进行比较。 根据比较结果确定模拟中使用的短程火炬模型参数是否合适。 如果用于模拟的短距离火炬模型参数不合适,则根据测得的短距离数据和模拟的短距离火炬数据优化短距离火炬模型参数。
    • 6. 发明申请
    • Method, program product and apparatus for obtaining short-range flare model parameters for lithography simulation tool
    • 用于获得光刻模拟工具的短程火炬模型参数的方法,程序产品和设备
    • US20070260437A1
    • 2007-11-08
    • US11415423
    • 2006-05-02
    • Tamer CoskunSangbong ParkJang ChenBernd Geh
    • Tamer CoskunSangbong ParkJang ChenBernd Geh
    • G06G7/48
    • G03F7/70941G03F7/705
    • A process of obtaining short-range flare model parameters representing a short-range flare which degrades a contrast of an image generated by a lithography tool, is disclosed. Short-range flare is measured from the image to obtain measured short-range flare data. A simulation is performed based on short-range flare model parameters to obtain simulated short-range flare data. The simulated short-range flare data is compared with the measured short range flare data. It is determined whether the short-range flare model parameters used in the simulation is appropriate based on the comparison result. The short-range flare model parameters is optimized according to the measured short-range data and the simulated short-range flare data if the short-range flare model parameters used for the simulation is not appropriate.
    • 公开了一种获得表示短距离火炬的短距离火炬模型参数的过程,其降低了由光刻工具产生的图像的对比度。 从图像中测量短程光晕,以获得测量的短距离闪光数据。 基于短距离火炬模型参数进行模拟,以获得模拟的短距离火炬数据。 将模拟的短程火炬数据与测量的短距离火炬数据进行比较。 根据比较结果确定模拟中使用的短程火炬模型参数是否合适。 如果用于模拟的短距离火炬模型参数不合适,则根据测得的短距离数据和模拟的短距离火炬数据优化短距离火炬模型参数。
    • 9. 发明申请
    • Lithographic processing optimization based on hypersampled correlations
    • 基于超采样相关的平滑处理优化
    • US20050106479A1
    • 2005-05-19
    • US10715109
    • 2003-11-18
    • Bernd GehRoger IrwinEric JandaDavid Phillips
    • Bernd GehRoger IrwinEric JandaDavid Phillips
    • H01L21/027G03F7/00G03F7/20
    • G03F7/70625G03F7/70425
    • A method of optimizing lithographic processing to achieve substrate uniformity, is presented herein. In one embodiment, The method includes deriving hyper-sampled correlation information indicative of photoresist behavior for a plurality of wafer substrates processed at pre-specified target processing conditions. The derivation includes micro-exposing subfields of the substrates with a pattern, processing the substrates at the various target conditions, determining photoresist-related characteristics of the subfields (e.g., Bossung curvatures), and extracting correlation information regarding the subfield characteristics and the different target processing conditions to relate the target conditions as a function of subfield characteristics. The method then detects non-uniformities in a micro-exposed subsequent substrate-processed under production-level processing conditions and exploits the correlation information to adjust the production-level conditions and achieve uniformity across the substrate.
    • 本文给出了优化平版印刷加工以实现基板均匀性的方法。 在一个实施例中,该方法包括导出指示在预定目标处理条件下处理的多个晶片衬底的光致抗蚀剂行为的超采样相关信息。 衍生包括具有图案的基板的微曝光子场,在各种目标条件下处理基板,确定子场的光致抗蚀剂相关特性(例如,Bossung曲率),以及提取关于子场特性和不同目标的相关信息 处理条件将目标条件作为子场特征的函数进行关联。 然后,该方法在生产级处理条件下的微曝光后续衬底处理中检测不均匀性,并利用相关信息来调整生产水平条件并实现衬底上的均匀性。
    • 10. 发明授权
    • Projection objective for microlithography
    • 微光刻的投影目标
    • US08212988B2
    • 2012-07-03
    • US11658574
    • 2005-08-03
    • Bernd Geh
    • Bernd Geh
    • G03B27/42
    • G03F7/702G03F7/703G03F7/70783
    • A projection objective for imaging a pattern arranged in an object surface of the projection objective into an image surface of the projection objective with a demagnified imaging scale has a plurality of optical elements which are arranged along an optical axis of the projection objective and are configured in such a way that a defined image field curvature of the projection objective is set in such a way that an object surface that is curved convexly with respect to the projection objective can be imaged into a planar image surface. What can be achieved given a suitable setting of the object surface curvature is that a gravitation-dictated bending of a mask does not have a disturbing effect on the imaging quality.
    • 用于将布置在投影物体的物体表面中的图案成像成具有缩小成像刻度的投影物镜的图像表面的投影物镜具有沿着投影物镜的光轴布置的多个光学元件, 使得投影物镜的定义的图像场曲率被设置为使得相对于投影物体凸出地弯曲的物体表面可以成像为平面图像表面的方式。 给定对象表面曲率的适当设置可以实现什么是掩模的重力指定弯曲对成像质量没有干扰的影响。