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    • 4. 发明授权
    • Method for preparing a magneto optic memory
    • 制备磁光存储器的方法
    • US5169504A
    • 1992-12-08
    • US615302
    • 1990-11-19
    • Bernard BechevetDidier ChalletonBernard RollandBruno Vallon
    • Bernard BechevetDidier ChalletonBernard RollandBruno Vallon
    • C23C14/08G11B11/10G11B11/105H01F41/14
    • G11B11/10586H01F41/14
    • Method for preparing a magneto optic memory comprising on a support (22), such as one made of glass, metal or a plastic material, a planar sensitive film (21) of magneto optic material for receiving at each point the recording of one of the two binary digits 0 and 1 in the form of small domains juxtaposed and magnetized perpendicular to the plane of the film in one of the two possible directions with respect to the latter, the sensitive film (21) being deposited by a cathodic or other evporation process of a magentic oxide selected from the group including spinel ferrites, hexaferrites and ferrimagnetic garnets, the preceding deposition being followed by a crystallization of the amorphous regions of said film with the aid of an annealing, wherein at least one reflective film (28) and/or one film constituting a thermal screen is inserted between the support (22) and the sensitive film (21) and wherein the annealing is a fast annealing, namely of a few seconds at a temperature of between 600.degree. C. and 650.degree. C.
    • 一种用于制备磁光存储器的方法,包括在诸如由玻璃,金属或塑料材料制成的支撑体(22)上的磁光学材料的平面敏感膜(21),用于在每个点处接收记录 在相对于后者的两个可能方向中的一个方向垂直于膜的平面并列并磁化的小畴的形式的两个二进制数字0和1是通过阴极或其它的发生过程沉积的 选自包括尖晶石铁氧体,六铁和亚铁磁石榴石的一组磁性氧化物,之前沉积之后借助退火结晶所述膜的非晶区域,其中至少一个反射膜(28)和/ 或者构成热屏的一个膜被插入到支撑体(22)和敏感膜(21)之间,并且其中退火是快速退火,即在其间的温度 600℃和650℃