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    • 4. 发明申请
    • THIN FILM ELECTRODE CERAMIC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
    • 薄膜电极陶瓷基板及其制造方法
    • US20130032384A1
    • 2013-02-07
    • US13565249
    • 2012-08-02
    • Won Hee YooByeung Gyu ChangTaek Jung LeeYun Hwi Park
    • Won Hee YooByeung Gyu ChangTaek Jung LeeYun Hwi Park
    • H05K1/03H05K3/22
    • H05K3/243H05K1/0306H05K3/107H05K3/108H05K2201/0338
    • Disclosed herein are a thin film electrode ceramic substrate and a method for manufacturing the same. The thin film electrode ceramic substrate includes: a ceramic substrate; a thin film electrode pattern formed on the ceramic substrate; and a plating layer formed on the thin film electrode pattern, wherein the plating layer is formed above the thin film electrode pattern and on both lateral surfaces of the thin film electrode pattern. According to the present invention, an undercut defect occurring between the surface of the ceramic substrate and the thin film electrode pattern and between the thin film electrode patterns due to an etchant can be prevented, by forming a plating layer above the thin film electrode pattern or on both lateral surfaces of the thin film electrode pattern, or forming an intaglio type anti-etching metal layer in the surface of the ceramic substrate.
    • 本文公开了一种薄膜电极陶瓷基板及其制造方法。 薄膜电极陶瓷基板包括:陶瓷基板; 形成在陶瓷基板上的薄膜电极图案; 以及形成在所述薄膜电极图案上的镀层,其中所述镀层形成在所述薄膜电极图案的上方以及所述薄膜电极图案的两个侧面上。 根据本发明,通过在薄膜电极图案上方形成镀层,可以防止在陶瓷基板的表面与薄膜电极图案之间以及由于蚀刻剂引起的薄膜电极图案之间发生的底切缺陷,或 在薄膜电极图案的两个侧表面上,或在陶瓷基板的表面中形成凹版型的抗蚀刻金属层。
    • 5. 发明申请
    • POWER AMPLIFYING DEVICE HAVING LINEARIZER
    • 具有线性化的功率放大器件
    • US20080238553A1
    • 2008-10-02
    • US12049005
    • 2008-03-14
    • Yun Hee CHOChul Soon ParkJi Hoon KimYun Hwi Park
    • Yun Hee CHOChul Soon ParkJi Hoon KimYun Hwi Park
    • H03F3/04
    • H03F1/0266H03F1/32H03F2200/18
    • There is provided a power amplifying device having a linearizer in which a bias circuit has an initial impedance set when initially operated, then the impedance is varied according to a level of an input signal and the input signal is amplified in a broad range from a low level region to a high level region, thereby improving linearity of an output signal. The power amplifying device including: an amplifying unit receiving a bias power source and amplifying an input signal; a bias unit varying the bias power source according to a set impedance to provide to the amplifying unit; and an impedance setting unit setting the impedance of the bias unit in response to a preset control voltage when the bias unit is initially operated and re-setting the impedance of the bias unit according to a level of the input signal of the amplifying unit after initial operation of the bias unit.
    • 提供一种功率放大装置,其具有线性化装置,其中偏置电路在初始操作时具有设定的初始阻抗,然后根据输入信号的电平来改变阻抗,并且输入信号在低范围内被放大 电平区域到高电平区域,从而提高输出信号的线性度。 功率放大装置包括:放大单元,接收偏置电源并放大输入信号; 偏置单元根据设定的阻抗改变偏置电源以提供给放大单元; 以及阻抗设定单元,当偏置单元初始操作时,响应于预设的控制电压来设定偏置单元的阻抗,并根据放大单元的输入信号的电平在初始化之后重新设置偏置单元的阻抗 偏置单元的操作。
    • 7. 发明授权
    • Power amplifying device having linearizer
    • 具有线性化的功率放大装置
    • US07692490B2
    • 2010-04-06
    • US12049005
    • 2008-03-14
    • Yun Hee ChoChul Soon ParkJi Hoon KimYun Hwi Park
    • Yun Hee ChoChul Soon ParkJi Hoon KimYun Hwi Park
    • H03F3/04
    • H03F1/0266H03F1/32H03F2200/18
    • There is provided a power amplifying device having a linearizer in which a bias circuit has an initial impedance set when initially operated, then the impedance is varied according to a level of an input signal and the input signal is amplified in a broad range from a low level region to a high level region, thereby improving linearity of an output signal. The power amplifying device including: an amplifying unit receiving a bias power source and amplifying an input signal; a bias unit varying the bias power source according to a set impedance to provide to the amplifying unit; and an impedance setting unit setting the impedance of the bias unit in response to a preset control voltage when the bias unit is initially operated and re-setting the impedance of the bias unit according to a level of the input signal of the amplifying unit after initial operation of the bias unit.
    • 提供一种功率放大装置,其具有线性化装置,其中偏置电路在初始操作时具有设定的初始阻抗,然后根据输入信号的电平来改变阻抗,并且输入信号在低范围内被放大 电平区域到高电平区域,从而提高输出信号的线性度。 功率放大装置包括:放大单元,接收偏置电源并放大输入信号; 偏置单元根据设定的阻抗改变偏置电源以提供给放大单元; 以及阻抗设定单元,当偏置单元初始操作时,响应于预设的控制电压来设定偏置单元的阻抗,并根据放大单元的输入信号的电平在初始化之后重新设置偏置单元的阻抗 偏置单元的操作。
    • 8. 发明授权
    • Band pass filter
    • 带通滤波器
    • US07649431B2
    • 2010-01-19
    • US11905786
    • 2007-10-04
    • Yun Hee ChoYun Hwi Park
    • Yun Hee ChoYun Hwi Park
    • H03H7/00H01P7/00
    • H01P1/20345
    • There is provided a multi-layered band pass filter capable of improving a stop characteristic out of a pass band and reducing the entire size of the filter. The multi-layered band pass filter includes a ceramic laminated body having at least first to fifth dielectric layers laminated sequentially therein; first and second resonators having symmetrical patterns of first and second inductors formed on the first dielectric layer, and symmetrical patterns of first and second capacitors formed on the second dielectric layer so that they are at least partially overlapped with the patterns of the first and second inductors; a pattern of first and second load capacitors electrically capacitively coupled respectively to ends of the first and second resonators formed on the third dielectric layer; a pattern of first and second notching capacitors electrically capacitively coupled respectively to the other ends of the first and second resonators formed on the third dielectric layer; and first and second ground planes formed respectively on the fourth and fifth dielectric layers, wherein each of the patterns of the first and second inductors is composed of a low impedance portion formed of wide-width lines and a high impedance portion formed of meander-type narrow-width lines from the low impedance portion.
    • 提供了能够改善通带中的停止特性并减小滤波器整体尺寸的多层带通滤波器。 多层带通滤波器包括:陶瓷层叠体,其中至少第一至第五电介质层依次层叠; 第一和第二谐振器具有形成在第一介电层上的第一和第二电感器的对称图案,以及形成在第二介电层上的第一和第二电容器的对称图案,使得它们至少部分地与第一和第二电感器的图案重叠 ; 第一和第二负载电容器的电容电容地耦合到形成在第三介电层上的第一和第二谐振器的端部; 分别与形成在第三电介质层上的第一和第二谐振器的另一端电容耦合的第一和第二开槽电容器的图案; 以及分别形成在第四和第五电介质层上的第一和第二接地层,其中第一和第二电感器的每个图案由宽宽线形成的低阻抗部分和由曲折形式形成的高阻抗部分 来自低阻抗部分的窄宽线。
    • 9. 发明申请
    • RF balanced matching device
    • 射频平衡匹配装置
    • US20070139129A1
    • 2007-06-21
    • US11600063
    • 2006-11-16
    • Yun Hwi Park
    • Yun Hwi Park
    • H03K3/02
    • H03F1/26H01L23/66H01L2924/0002H01L2924/09701H01L2924/3011H03F1/565H03F3/195H03F2200/222H03F2200/225H03F2200/294H03F2200/372H03F2200/451H03H7/38H01L2924/00
    • In an RF balanced matching device, a first capacity pattern of a first area is formed on a first ceramic sheet. A second capacity pattern of a second area is formed on the first ceramic sheet, spaced apart from the first capacity pattern at a predetermined distance. A third capacity pattern of a third area is formed on a second ceramic sheet stacked on the first ceramic sheet, overlapping perpendicular to the first capacity pattern. The third capacity pattern cooperates with the first capacity pattern to form a first capacitance. Also, a fourth capacity pattern of a fourth area is formed on the second ceramic sheet, overlapping perpendicular to the second capacity pattern. The fourth capacity pattern cooperates with the second capacity pattern to form a second capacitance. An inductance pattern has a predetermined electrical length and connects the third capacity pattern with the fourth capacity pattern.
    • 在RF平衡匹配装置中,在第一陶瓷片上形成第一区域的第一容量图案。 第二区域的第二容量图案形成在第一陶瓷片上,与第一容量图案间隔开预定距离。 第三区域的第三容量图案形成在堆叠在第一陶瓷片上的与第一容量图案垂直重叠的第二陶瓷片上。 第三容量模式与第一容量模式配合以形成第一电容。 此外,第四区域的第四容量图案形成在第二陶瓷片上,与第二电容图案垂直重叠。 第四容量模式与第二容量模式协调以形成第二电容。 电感图形具有预定的电长度,并将第三容量图与第四容量图形相连接。