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1. 发明授权

US5034604A Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction 失效
$Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction$
标题翻译：难溶性积液细胞产生可重复，均匀和超纯分子束的元素分子，利用减少的热梯度细丝结构
公开(公告)号：US5034604A
公开(公告)日：1991-07-23
申请号：US400549
申请日：1989-08-29
申请人： Ben G. Streetman , Terry J. Mattord , Vijay P. Kesan , Ben G. Treetman , Terry Mattord
发明人： Ben G. Streetman , Terry J. Mattord , Vijay P. Kesan , Ben G. Treetman , Terry Mattord
IPC分类号： C23C14/24 , C30B23/06
CPC分类号： C23C14/243 , C30B23/066
摘要： A device and method for producing an ultra pure molecular beam of elemental molecules utilizing a reduced thermal gradient filament construction in an effusion cell is provided. The effusion cell comprises a crucible having an open and a closed end and at least one heating filament distributed immediate the crucible. The at least one heating filament or filaments are provided having a first portion having a first pitch in proximal relationship to the open end of the crucible and having a second portion having a second pitch wherein the first pitch is of a higher spatial frequency than the second pitch. The heating filament is non-inductively wound about the crucible and positioned in conformity to the outside structure of the crucible. The heat shield is positioned proximate and about the crucible and heating filament or filaments. The heating filaments are connected to a controllable electric power supply producing a near constant temperature along the long axis of the crucible. By placing source material in the crucible and placing the crucible heating filaments and heat shield in a reduced pressure atmosphere and powering the heating filaments, a substantially constant temperature is produced along the crucible long axis resulting in an ultra pure molecular beam of elemental molecules of the source material.
摘要翻译：本发明提供一种利用在注液池中降低热梯度丝结构来制造元素分子的超纯分子束的装置和方法。渗出池包括具有开放和封闭端的坩埚，并且至少一个加热丝分布在坩埚中。提供至少一个加热丝或长丝，其具有第一部分，该第一部分具有与坩埚开口端近端关系的第一间距，并具有第二部分，该第二部分具有第二间距，其中第一间距具有比第二间距更高的空间频率沥青。加热丝不受电感缠绕在坩埚上并与坩埚的外部结构相一致。隔热罩靠近坩埚和加热丝或长丝。加热丝与可控电源连接，沿着坩埚的长轴产生接近恒定的温度。通过将源材料放置在坩埚中并将坩埚加热丝和隔热罩放置在减压气氛中并为加热丝提供动力，沿着坩埚长轴产生基本上恒定的温度，从而产生超纯分子束的元素分子源材料。

2. 发明授权

US5156815A Sublimating and cracking apparatus 失效
标题翻译：升华和裂解装置
公开(公告)号：US5156815A
公开(公告)日：1992-10-20
申请号：US241578
申请日：1988-09-08
申请人： Ben G. Streetman , Terry J. Mattord , Craig W. Farley
发明人： Ben G. Streetman , Terry J. Mattord , Craig W. Farley
IPC分类号： C23C14/24 , C30B23/06
CPC分类号： C23C14/243 , C30B23/06 , C30B23/066
摘要： A sublimating and cracking device which may be used to produce a collimated beam of molecules from a solid source. The device includes an elongated sublimating tube and an elongated cracking tube adapted to be axially oriented off axis to each other. The sublimating and cracking tubes are interconnected and heated in use.
摘要翻译：升华和裂解装置，其可用于从固体源产生准直的分子束。该装置包括细长的升华管和细长的裂解管，其适于彼此轴向偏离轴线。升华和裂解管在使用中互连和加热。

3. 发明授权

US5080870A Sublimating and cracking apparatus 失效
标题翻译：升华和裂解装置
公开(公告)号：US5080870A
公开(公告)日：1992-01-14
申请号：US400241
申请日：1989-08-28
申请人： Ben G. Streetman , Terry J. Mattord , Dean P. Neikirk
发明人： Ben G. Streetman , Terry J. Mattord , Dean P. Neikirk
IPC分类号： C23C14/24 , C30B23/06
CPC分类号： C23C14/243 , C30B23/06 , Y10S148/006 , Y10S148/169 , Y10S438/935
摘要： A furnace having a sublimating section, a cracking section oriented off axis to the sublimating section, and a valve for controlling flux between the sections. The valve includes an annular plug having at least one longitudinal slot. The plug is retractable from a fully closed position where the slot is completely covered, to a fully open position where the slot is completely exposed. The slot becomes increasingly exposed as the plug is moved from the fully closed position to the fully opened position, thereby increasing flux from the sublimating section to the cracking section.
摘要翻译：具有升华部分的炉子，与升华部分轴线相对的开裂部分，以及用于控制部件之间的通量的阀。阀包括具有至少一个纵向槽的环形塞。插头可从插槽完全覆盖的完全关闭位置缩回到插槽完全暴露的完全打开位置。当插头从完全关闭位置移动到完全打开位置时，槽变得越来越多地暴露，从而增加从升华部分到破裂部分的通量。

4. 发明授权

US5436474A Modulation doped field effect transistor having built-in drift field 失效
标题翻译：具有内置漂移场的调制掺杂场效应晶体管
公开(公告)号：US5436474A
公开(公告)日：1995-07-25
申请号：US352266
申请日：1994-12-07
申请人： Sanjay K. Banerjee , Aloysious F. Tasch, Jr. , Ben G. Streetman
发明人： Sanjay K. Banerjee , Aloysious F. Tasch, Jr. , Ben G. Streetman
IPC分类号： H01L29/778 , H01L29/205
CPC分类号： H01L29/7787 , H01L29/0657 , H01L29/201 , H01L29/778 , H01L29/7789
摘要： A MODFET device has highly doped source and drain regions separated by an undoped semiconductor alloy in which the mole fraction is graded between the source and the drain and with a conduction (and/or valence) band discontinuity at the heterojunction between the source and semiconductor alloy channel region of the device. Due to the graded mole fraction, the bandgap of the undoped semiconductor alloy decreases along the channel from the source to the drain and creates a built-in electric field. The higher bandgap in the source compared to that in the channel permits high energy carrier injection into the channel, with the built-in longitudinal electric field increasing carrier drift velocity and reducing transit time between the source and drain. In a preferred embodiment, the MODFET device has a vertical structure with the source and semiconductor alloy layers stacked on a drain substrate. The channel is defined by selectively etching the stacked structure with the exposed edge of the semiconductor alloy layer forming the channel. An undoped semiconductor layer and a modulation doped semiconductor layer are formed over the exposed edge with the undoped layer forming a spacer for the modulation doped layer. Carriers from the modulation doped layer spill over into the undoped channel and form a two-dimensional (or hole) electron gas. The devices can be implemented as p-channel and as n-channel devices fabricated in III-V compound and in Column IV-based semiconductor materials.
摘要翻译： MODFET器件具有由未掺杂半导体合金分离的高掺杂源极和漏极区域，其中摩尔分数在源极和漏极之间分级，并且在源极和半导体合金之间的异质结处具有导电（和/或价态）带的不连续性通道区域。由于分级摩尔分数，未掺杂的半导体合金的带隙沿着从源极到漏极的沟道减小，并且产生内置的电场。与信道相比，源中较高的带隙允许高能量载流子注入到通道中，内置的纵向电场增加载流子漂移速度并减少源极和漏极之间的传输时间。在优选实施例中，MODFET器件具有垂直结构，源极和半导体合金层堆叠在漏极衬底上。通过选择性地蚀刻形成沟道的半导体合金层的暴露边缘的层叠结构限定沟道。在暴露的边缘上形成未掺杂的半导体层和调制掺杂的半导体层，未掺杂的层形成用于调制掺杂层的间隔物。来自调制掺杂层的载流子溢出到未掺杂的沟道中并形成二维（或空穴）电子气。这些器件可以实现为p沟道和作为在III-V族化合物和基于IV IV的半导体材料中制造的n沟道器件。

5. 发明授权

US4257055A Negative resistance heterojunction devices 失效
标题翻译：负电阻异质结器件
公开(公告)号：US4257055A
公开(公告)日：1981-03-17
申请号：US60893
申请日：1979-07-26
申请人： Karl Hess , Ben G. Streetman , Hadis Morkoc
发明人： Karl Hess , Ben G. Streetman , Hadis Morkoc
IPC分类号： H01L29/15 , H01L29/76 , H01L29/86 , H01L47/00 , H01L29/161
CPC分类号： H01L29/76 , H01L29/155 , H01L29/86 , H01L47/00
摘要： Described is a heterostructure semiconductor device of sandwich type construction. The central layer exhibits high charge carrier mobility and a relatively narrow band gap characteristic. The outer sandwich layers exhibit low charge carrier mobilities and a larger band gap characteristic. Under quiescent conditions, the charge carriers from the outer sandwich layers reside in the central layer due to the "potential well" created by the band gap difference between the layers. The application of an appropriate electrical field to the central layer, aligned with the interface between the layers, causes a very rapid transfer of the electrons residing therein to the outer sandwich layers. This transfer results in the device exhibiting a negative resistance characteristic. Two and three terminal switching applications of the device are described as well as its application as a radiant energy detector.
摘要翻译：描述了三明治型结构的异质结构半导体器件。中心层表现出高电荷载流子迁移率和相对窄的带隙特性。外夹层层表现出低电荷载流子迁移率和较大的带隙特性。在静态条件下，由于由层之间的带隙差产生的“势阱”，来自外夹层层的电荷载体驻留在中心层中。将适当的电场施加到与层之间的界面对准的中心层，导致其驻留在其中的电子非常快速地转移到外部夹层层。这种转移导致器件呈现负电阻特性。描述该装置的两个和三个端子开关应用以及其作为辐射能量检测器的应用。

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