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1. 发明授权

US5501787A Immersion scanning system for fabricating porous silicon films 失效
标题翻译：用于制造多孔硅膜的浸渍扫描系统
公开(公告)号：US5501787A
公开(公告)日：1996-03-26
申请号：US395936
申请日：1995-02-27
申请人： Ernest Bassous , Jean-Marc Halbout , Subramanian S. Iyer , Vijay P. Kesan
发明人： Ernest Bassous , Jean-Marc Halbout , Subramanian S. Iyer , Vijay P. Kesan
IPC分类号： H01L21/3063 , H01L21/306 , H01L33/00 , H01L33/34 , C25D7/12 , C25D11/32
CPC分类号： H01L33/346 , H01L21/306 , H01L33/0054
摘要： A system for making porous silicon on blank and patterned Si substrates by "immersion scanning", particularly suitable for fabricating light-emitting Si devices and utilizing an open electrolytic cell having a cathode and an opposing anode consisting of a Si substrate on which the porous silicon is to be formed, both disposed, with their opposing surfaces in parallel, in an aqueous HF solution electrolyte contained in the cell. The substrate anode is mounted to be movable relative to the electrolyte so as to be mechanically cycled or scanned in and out of the electrolyte at a programmable rate during anodization. The uniformity, thickness and porosity of the resulting anodized layer on the substrate are determined by the scanning speed, number of cycles, current density, and HF-based electrolyte parameters of the system, and the Si substrate resistivity, conductivity type, and crystal orientation. The light-emitting silicon devices produced incorporate porous silicon layers and are operable at room temperature.
摘要翻译：一种用于通过“浸没扫描”在空白和图案化的Si衬底上制造多孔硅的系统，特别适用于制造发光的Si器件，并利用具有由Si衬底组成的阴极和相对阳极的开放电解池，多孔硅将被形成为两者彼此相对的平面布置在包含在电池中的HF水溶液电解液中。基板阳极安装成相对于电解质可移动，以便在阳极氧化期间以可编程的速率机械地循环或扫描电解质中和从电解液中扫出。基板上得到的阳极氧化层的均匀度，厚度和孔隙率由系统的扫描速度，循环次数，电流密度和HF基电解质参数以及Si衬底电阻率，导电类型和晶体取向。所制造的发光硅器件包括多孔硅层，并且可在室温下操作。

2. 发明授权

US5268324A Modified silicon CMOS process having selectively deposited Si/SiGe FETS 失效
标题翻译：改进的硅CMOS工艺具有选择性沉积的Si / SiGe FET
公开(公告)号：US5268324A
公开(公告)日：1993-12-07
申请号：US890042
申请日：1992-05-27
申请人： John M. Aitken , Vijay P. Kesan , Seshadri Subbanna , Manu J. Tejwani , Subramanian S. Iyer
发明人： John M. Aitken , Vijay P. Kesan , Seshadri Subbanna , Manu J. Tejwani , Subramanian S. Iyer
IPC分类号： H01L21/336 , H01L21/8238 , H01L27/092 , H01L21/70
CPC分类号： H01L29/66477 , H01L21/8238 , H01L27/0928 , Y10S148/082 , Y10S438/902
摘要： A process is disclosed for making CMOS devices with enhanced performance PMOS FETS by integrating germanium technology into a silicon-based fabrication method. Silicon-germanium layers are selectively grown on the surfaces of oxide-isolated PFET pockets of a silicon substrate previously prepared by a conventional silicon CMOS process. A silicon cap is deposited over each Si--Ge layer and gate insulator is formed over the cap provide gate dielectric for the PFETS. Gate insulator is formed over the NFET pockets to provide gate dielectric for the NFETS. Gate structures are completed along with source and drain junctions in accordance with normal practice. Provision also is made for the additional selective growth of a second silicon-germanium layer on the surfaces of oxide-isolated NFET pockets on the same CMOS substrate to enhance the performance of the NFETS as well as that of the PFETS.
摘要翻译：公开了一种通过将锗技术集成到基于硅的制造方法中来制造具有增强性能的PMOS FET的CMOS器件的工艺。硅 - 锗层选择性地生长在预先通过常规硅CMOS工艺制备的硅衬底的氧化物隔离PFET穴的表面上。在每个Si-Ge层上沉积硅帽，并且在盖上形成栅极绝缘体，为PFETS提供栅极电介质。栅极绝缘体形成在NFET槽之上，为NFETS提供栅极电介质。根据正常做法，栅极结构与源极和漏极连接点一起完成。还提供了在同一CMOS衬底上的氧化物隔离的NFET穴的表面上附加选择性地生长第二硅 - 锗层，以增强NFETS以及PFETS的性能。

3. 发明授权

US5034604A Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction 失效
$Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction$
标题翻译：难溶性积液细胞产生可重复，均匀和超纯分子束的元素分子，利用减少的热梯度细丝结构
公开(公告)号：US5034604A
公开(公告)日：1991-07-23
申请号：US400549
申请日：1989-08-29
申请人： Ben G. Streetman , Terry J. Mattord , Vijay P. Kesan , Ben G. Treetman , Terry Mattord
发明人： Ben G. Streetman , Terry J. Mattord , Vijay P. Kesan , Ben G. Treetman , Terry Mattord
IPC分类号： C23C14/24 , C30B23/06
CPC分类号： C23C14/243 , C30B23/066
摘要： A device and method for producing an ultra pure molecular beam of elemental molecules utilizing a reduced thermal gradient filament construction in an effusion cell is provided. The effusion cell comprises a crucible having an open and a closed end and at least one heating filament distributed immediate the crucible. The at least one heating filament or filaments are provided having a first portion having a first pitch in proximal relationship to the open end of the crucible and having a second portion having a second pitch wherein the first pitch is of a higher spatial frequency than the second pitch. The heating filament is non-inductively wound about the crucible and positioned in conformity to the outside structure of the crucible. The heat shield is positioned proximate and about the crucible and heating filament or filaments. The heating filaments are connected to a controllable electric power supply producing a near constant temperature along the long axis of the crucible. By placing source material in the crucible and placing the crucible heating filaments and heat shield in a reduced pressure atmosphere and powering the heating filaments, a substantially constant temperature is produced along the crucible long axis resulting in an ultra pure molecular beam of elemental molecules of the source material.
摘要翻译：本发明提供一种利用在注液池中降低热梯度丝结构来制造元素分子的超纯分子束的装置和方法。渗出池包括具有开放和封闭端的坩埚，并且至少一个加热丝分布在坩埚中。提供至少一个加热丝或长丝，其具有第一部分，该第一部分具有与坩埚开口端近端关系的第一间距，并具有第二部分，该第二部分具有第二间距，其中第一间距具有比第二间距更高的空间频率沥青。加热丝不受电感缠绕在坩埚上并与坩埚的外部结构相一致。隔热罩靠近坩埚和加热丝或长丝。加热丝与可控电源连接，沿着坩埚的长轴产生接近恒定的温度。通过将源材料放置在坩埚中并将坩埚加热丝和隔热罩放置在减压气氛中并为加热丝提供动力，沿着坩埚长轴产生基本上恒定的温度，从而产生超纯分子束的元素分子源材料。

4. 发明授权

US5525828A High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields 失效
标题翻译：具有凹陷电极和厚氧化物的高速硅基侧面光电探测器，以减少边缘场
公开(公告)号：US5525828A
公开(公告)日：1996-06-11
申请号：US294897
申请日：1994-08-23
申请人： Ernest Bassous , Jean-Marc Halbout , Subramanian S. Iyer , Rajiv V. Joshi , Vijay P. Kesan , Michael R. Scheuermann , Massimo A. Ghioni
发明人： Ernest Bassous , Jean-Marc Halbout , Subramanian S. Iyer , Rajiv V. Joshi , Vijay P. Kesan , Michael R. Scheuermann , Massimo A. Ghioni
IPC分类号： H01L31/02 , H01L31/105 , H01L31/108 , H01L31/07
CPC分类号： H01L31/105 , H01L31/02024 , H01L31/1085
摘要： Silicon-VLSI-compatible photodetectors, in the form of a metal-semiconductor-metal photodetector (MSM-PD) or a lateral p-i-n photodetector (LPIN-PD), are disclosed embodying interdigitated metallic electrodes on a silicon surface. The electrodes of the MSM-PD have a moderate to high electron and hole barrier height to silicon, for forming the Schottky barriers, and are fabricated so as to be recessed in the surface semiconducting layer of silicon through the use of self-aligned metallization either by selective deposition or by selective reaction and etching, in a manner similar to the SALICIDE concept. Fabrication is begun by coating the exposed Si surface of a substrate with a transparent oxide film, such that the Si/oxide interface exhibits low surface recombination velocity. The interdigitated pattern is then etched through the oxide film by lithography to expose the Si surface and metallic electrode members are formed selectively in the exposed Si surface, using self-aligned metallization to produce thin interdigitated electrodes recessed below the silicon surface, which itself may be on a comparatively thin Si layer. The electrodes may be spaced to minimize the interdigital carrier transit time and maximize the sensitivity and the entire process and structure are compatible with conventional silicon integrated circuit (IC) technology. A further feature involves isolating the semiconductor surface layer from the substrate by a layer that may be either 1) transparent and insulating, 2) optically absorbing, or 3) optically reflecting, so that the photocarriers recombine before they can be collected by the field. In the latter case, the photodetector acts as a resonant cavity, resulting in an increase in the number of carriers that are generated, and hence a more sensitive device.
摘要翻译：在硅表面上公开了金属 - 半导体 - 金属光电探测器（MSM-PD）或横向p-i-n光电检测器（LPIN-PD）形式的硅 - VLSI兼容光电探测器。 MSM-PD的电极具有对于硅的中等到高电子和空穴阻挡高度，用于形成肖特基势垒，并且通过使用自对准金属化制造成凹入硅的表面半导体层通过选择性沉积或通过选择性反应和蚀刻，以类似于SALICIDE概念的方式。通过用透明氧化膜涂覆衬底的暴露的Si表面开始制造，使得Si /氧化物界面表现出低的表面复合速度。然后通过光刻法将交错图案通过氧化膜蚀刻以暴露Si表面，并且使用自对准金属化选择性地在暴露的Si表面中形成金属电极构件，以产生凹陷在硅表面下方的薄的叉指电极，其本身可以是在较薄的Si层上。这些电极可以间隔开，以最小化叉指运送通过时间并使灵敏度最大化，并且整个过程和结构与传统的硅集成电路（IC）技术相兼容。另一个特征包括通过可以是1）透明和绝缘，2）光学吸收或3）光学反射的层将衬底的半导体表面层隔离，使得光载流子在它们可以被场收集之前复合。在后一种情况下，光电探测器用作谐振腔，导致所产生的载流子数量增加，因此增加了更敏感的装置。

5. 发明授权

US5458756A Apparatus for producing porous silicon on a substrate 失效
标题翻译：用于在基板上制造多孔硅的装置
公开(公告)号：US5458756A
公开(公告)日：1995-10-17
申请号：US266444
申请日：1994-06-27
申请人： Ernest Bassous , Jean-Marc Halbout , Subramanian S. Iyer , Vijay P. Kesan
发明人： Ernest Bassous , Jean-Marc Halbout , Subramanian S. Iyer , Vijay P. Kesan
IPC分类号： H01L21/3063 , H01L21/306 , H01L33/00 , H01L33/34 , C25D17/00 , C25F7/00
CPC分类号： H01L33/346 , H01L21/306 , H01L33/0054
摘要： A system for making porous silicon on blank and patterned Si substrates by "immersion scanning", particularly suitable for fabricating light-emitting Si devices and utilizing an open electolytic cell having a cathode and an opposing anode consisting of a Si substrate on which the porous silicon is to be formed, both disposed, with their opposing surfaces in parallel, in an aqueous HF solution electrolyte contained in the cell. The substrate anode is mounted to be movable relative to the electrolyte so as to be mechanically cycled or scanned in and out of the electrolyte at a programmable rate during anodization. The uniformity, thickness and porosity of the resulting anodized layer on the substrate are determined by the scanning speed, number of cycles, current density, and HF-based electrolyte parameters of the system, and the Si substrate resistivity, conductivity type, and crystal orientation. The light-emitting silicon devices produced incorporate porous silicon layers and are operable at room temperature.
摘要翻译：一种用于通过“浸没扫描”在空白和图案化的Si衬底上制造多孔硅的系统，特别适用于制造发光的Si器件，并且利用具有阴极和由Si衬底组成的相对阳极的开放电解槽，多孔硅将被形成为两者彼此相对的平面布置在包含在电池中的HF水溶液电解液中。基板阳极安装成相对于电解质可移动，以便在阳极氧化期间以可编程的速率机械地循环或扫描电解质中和从电解液中扫出。基板上得到的阳极氧化层的均匀度，厚度和孔隙率由系统的扫描速度，循环次数，电流密度和HF基电解质参数以及Si衬底电阻率，导电类型和晶体取向。所制造的发光硅器件包括多孔硅层，并且可在室温下操作。

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