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1. 发明申请

US20060160354A1 Via electromigration improvement by changing the via bottom geometric profile 有权
公开(公告)号：US20060160354A1
公开(公告)日：2006-07-20
申请号：US11374848
申请日：2006-03-14
申请人： BeiChao Zhang , Chun Low , Hong Lee , Sang Loong , Qiang Guo
发明人： BeiChao Zhang , Chun Low , Hong Lee , Sang Loong , Qiang Guo
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L21/76805 , H01L21/76814
摘要： An integration approach to improve electromigration resistance in a semiconductor device is described. A via hole is formed in a stack that includes an upper dielectric layer, a middle TiN ARC, and a lower first metal layer and is filled with a conformal diffusion barrier layer and a second metal layer. A key feature is that the etch process can be selected to vary the shape and location of the via bottom. A round or partially rounded bottom is formed in the first metal layer to reduce mechanical stress near the diffusion barrier layer. On the other hand, a flat bottom which stops on or in the TiN ARC is selected when exposure of the first metal layer to subsequent processing steps is a primary concern. Electromigration resistance is found to be lower than for a via structure with a flat bottom formed in a first metal layer.

2. 发明申请

US20050090097A1 Via electromigration improvement by changing the via bottom geometric profile 有权
标题翻译：通过改变通孔底部几何轮廓来改善电迁移
公开(公告)号：US20050090097A1
公开(公告)日：2005-04-28
申请号：US10692028
申请日：2003-10-23
申请人： Beichao Zhang , Chun Low , Hong Lee , Sang Loong , Giang Guo
发明人： Beichao Zhang , Chun Low , Hong Lee , Sang Loong , Giang Guo
IPC分类号： H01L21/4763 , H01L21/768
CPC分类号： H01L21/76802 , H01L21/76805 , H01L21/76814
摘要： An integration approach to improve electromigration resistance in a semiconductor device is described. A via hole is formed in a stack that includes an upper dielectric layer, a middle TiN ARC, and a lower first metal layer and is filled with a conformal diffusion barrier layer and a second metal layer. A key feature is that the etch process can be selected to vary the shape and location of the via bottom. A round or partially rounded bottom is formed in the first metal layer to reduce mechanical stress near the diffusion barrier layer. On the other hand, a flat bottom which stops on or in the TiN ARC is selected when exposure of the first metal layer to subsequent processing steps is a primary concern. Electromigration resistance is found to be lower than for a via structure with a flat bottom formed in a first metal layer.
摘要翻译：描述了一种用于提高半导体器件中的电迁移阻力的集成方法。在包括上电介质层，中间TiN ARC和下第一金属层的堆叠中形成通孔，并且填充有共形扩散阻挡层和第二金属层。一个关键特征是可以选择蚀刻工艺来改变通孔底部的形状和位置。在第一金属层中形成圆形或部分圆形的底部，以减小扩散阻挡层附近的机械应力。另一方面，当第一金属层暴露于后续处理步骤时，选择在TiN ARC上或其中停止的平底，这是首要考虑的问题。发现耐电迁移性低于在第一金属层中形成的平坦底部的通孔结构。

3. 发明申请

US20070167142A1 Mobile phone for controlling diversity 有权
标题翻译：用于控制多样性的手机
公开(公告)号：US20070167142A1
公开(公告)日：2007-07-19
申请号：US11332697
申请日：2006-01-13
申请人： In Kim , Hong Lee
发明人： In Kim , Hong Lee
IPC分类号： H04B7/02
CPC分类号： H04B7/0689 , H04B7/0871
摘要： Disclosed is a mobile phone for selectively performing transmission/receipt diversity when radio frequency signals are transmitted and received. The mobile phone includes control means for controlling transmission/receipt of the radio frequency signal and controlling transmission/receipt diversity; receipt adjusting means for controlling receipt of the radio frequency signal and controlling receipt diversity under control of the control means; first radio frequency signal receiving means for converting the radio frequency signal received through the first antenna into a baseband signal to be transmitted to the control means under receipt control of the receipt adjusting means; second radio frequency signal receiving means for converting the radio frequency signal received through the second antenna into a baseband signal to be transmitted to the control means under receipt diversity control of the receipt adjusting means; transmission diversity adjusting means for controlling transmission diversity under control of the control means; and radio frequency signal transmitting means for converting the baseband signal transmitted from the control means into a radio frequency signal to be transmitted to the first antenna and transmitting the radio frequency signal to the second antenna under transmission diversity control of the transmission diversity adjusting means.
摘要翻译：公开了一种用于在发送和接收射频信号时选择性地执行发送/接收分集的移动电话。移动电话包括用于控制射频信号的发送/接收以及控制发送/接收分集的控制装置; 接收调整装置，用于在控制装置的控制下控制无线电频率信号的接收和控制接收分集; 第一射频信号接收装置，用于在接收调节装置的接收控制下将通过第一天线接收的射频信号转换成基带信号，以发送给控制装置; 第二射频信号接收装置，用于在接收调节装置的接收分集控制下，将通过第二天线接收的射频信号转换为基带信号，以发送给控制装置; 传输分集调整装置，用于在控制装置的控制下控制传输分集; 以及射频信号发送装置，用于将从控制装置发送的基带信号转换成要发送到第一天线的射频信号，并在发送分集调整装置的发送分集控制下将射频信号发送到第二天线。

4. 发明申请

US20070083115A1 Control panel for use in an ultrasonic diagnostic apparatus 审中-公开
标题翻译：用于超声波诊断仪的控制面板
公开(公告)号：US20070083115A1
公开(公告)日：2007-04-12
申请号：US11496445
申请日：2006-08-01
申请人： Hong Lee , Dong Lee
发明人： Hong Lee , Dong Lee
IPC分类号： A61B8/00
CPC分类号： G01S7/52084 , A61B8/00 , A61B8/4405 , A61B8/461 , A61B8/467 , G01S15/899 , G06F3/03549 , G06F3/0383
摘要： The present invention relates to a control panel for use in an ultrasonic diagnostic apparatus, which enables a user to input various commands via one input device, thereby providing convenience in use. The ultrasonic diagnostic apparatus includes a control part for controlling operations thereof and the control panel is configured to transfer an input made by a user to the control part. The control panel comprises: a first input device having a pointing function or a scrolling function; and a second input device disposed around the first input device, the second input device having a plurality of input sections and generating a signal when the user manipulates each input section. A command corresponding to the signal from the second input device is key-mapped by the control part.
摘要翻译：本发明涉及一种用于超声波诊断装置的控制面板，其使得用户能够经由一个输入装置输入各种命令，从而提供使用方便。超声波诊断装置包括用于控制其操作的控制部分，并且控制面板被配置为将由用户制成的输入传送到控制部分。控制面板包括：具有指向功能或滚动功能的第一输入装置; 以及设置在所述第一输入装置周围的第二输入装置，所述第二输入装置具有多个输入部分，并且当所述用户操纵每个输入部分时产生信号。与来自第二输入设备的信号相对应的命令由控制部分进行密钥映射。

5. 发明申请

US20070022943A1 A Silicon Single Crystal Ingot and Wafer, Growing Apparatus and Method Therof 有权
标题翻译：硅单晶晶片和晶圆，生长装置和方法Therof
公开(公告)号：US20070022943A1
公开(公告)日：2007-02-01
申请号：US11460408
申请日：2006-07-27
申请人： Young Ho Hong , Man Kwak , III-Soo Choi , Hyon-Jong Cho , Hong Lee
发明人： Young Ho Hong , Man Kwak , III-Soo Choi , Hyon-Jong Cho , Hong Lee
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B30/04 , C30B15/305 , C30B29/06 , Y10S117/917
摘要： A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a crucible provided in the chamber, and for containing a silicon melt; a heater provided at the outside of the crucible and for heating the silicon melt; a pulling unit for ascending a silicon single crystal grown from the silicon melt; and a plurality of magnetic members provided at the outside of the chamber and for asymmetrically applying a magnetic field to the silicon melt Such a structure can uniformly controls an oxygen concentration at a rear portion of a silicon single crystal ingot using asymmetric upper/lower magnetic fields without replacing a hot zone In addition, such a structure can controls a flower phenomenon generated on the growth of the single crystal by the asymmetric magnetic fields without a loss such as the additional hot zone (H/Z) replacement, P/S down, and SR variance.
摘要翻译：一种用于生长基于切克劳斯基法的硅单晶锭的硅单晶锭生长装置。硅单晶锭生长装置包括：室; 设置在所述室中并用于容纳硅熔体的坩埚; 设置在坩埚外侧并用于加热硅熔体的加热器; 用于使从硅熔体生长的硅单晶上升的拉伸单元; 以及设置在室外的多个磁性部件，用于对硅熔体非对称地施加磁场。这种结构可以使用不对称的上/下磁场均匀地控制硅单晶锭后部的氧浓度另外，这种结构也可以通过非对称磁场来控制单晶生长产生的花朵现象，而不会有额外的热区（H / Z）替换，P / S下降等损失，和SR方差。

6. 发明申请

US20050275816A1 Exposure apparatus 审中-公开
标题翻译：曝光装置
公开(公告)号：US20050275816A1
公开(公告)日：2005-12-15
申请号：US10998973
申请日：2004-11-30
申请人： Hong Lee
发明人： Hong Lee
IPC分类号： H01L21/027 , G03B27/52 , G03F7/20
CPC分类号： G03F7/70916 , G03F7/70925
摘要： An exposure apparatus is disclosed, the exposure apparatus for use with non-pellicle reticle including a sensing unit for detecting a particle at a reticle stage and a cleaner for cleaning the detected particle at the reticle stage.
摘要翻译：公开了一种曝光装置，所述曝光装置与非防护薄膜掩模版一起使用，所述曝光装置包括用于检测标线器台上的颗粒的感测单元和用于在掩模版阶段清洁所检测的颗粒的清洁器。

7. 发明申请

US20050098412A1 Conveyor system having width adjustment unit 有权
标题翻译：具有宽度调节单元的输送系统
公开(公告)号：US20050098412A1
公开(公告)日：2005-05-12
申请号：US10950678
申请日：2004-09-28
申请人： Ji Uh , Kyung Chae , Jeong Lee , Hyun Song , Hong Lee
发明人： Ji Uh , Kyung Chae , Jeong Lee , Hyun Song , Hong Lee
IPC分类号： B65G13/12 , B65G39/02 , B65G49/06 , B65G15/10
CPC分类号： B65G13/12 , B65G39/02 , B65G49/064 , B65G2249/02
摘要： A conveyor system is disclosed, having a width adjustment unit capable of adjusting a width according to the size of goods to transfer semiprocessed goods in the process line, which includes a transfer unit for transferring goods; conveyor plates provided at both sides of the transfer unit, and guiding the goods by supporting both sides of the goods; and the width adjustment unit including a wire connected with the conveyor plates, a driving pulley operating the wire, and a driven connected with the wire.
摘要翻译：公开了一种输送机系统，其具有宽度调节单元，该宽度调节单元能够根据货物的尺寸调整宽度，以便在生产线中转移半加工品，其中包括用于转运货物的转运单元; 在转运单元的两侧设有输送板，并通过支撑货物的两侧引导货物; 并且所述宽度调节单元包括与所述传送板连接的导线，操作所述导线的驱动滑轮以及与所述导线连接的驱动滑轮。

8. 发明授权

US06398430B1 Semiconductor device fabrication system 失效
标题翻译：半导体器件制造系统
公开(公告)号：US06398430B1
公开(公告)日：2002-06-04
申请号：US09634999
申请日：2000-08-08
申请人： Gyu-chan Jeoung , Kwang-seok Choi , Jin-hang Jung , Young-sun Kim , Hong Lee , Hoe-sik Chung , Sung-ho Lee , Hun-hwan Ha
发明人： Gyu-chan Jeoung , Kwang-seok Choi , Jin-hang Jung , Young-sun Kim , Hong Lee , Hoe-sik Chung , Sung-ho Lee , Hun-hwan Ha
IPC分类号： G03D500
CPC分类号： G03F7/40 , G03F7/2024 , H01L21/308
摘要： A semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking and flow baking unit for cross-linking the photoresist pattern and subsequently flow baking the cross-linked photoresist pattern, wherein the cross-linking and flow baking unit thermally stabilizes the photoresist pattern prior to flow baking.
摘要翻译：一种用于在半导体器件图案形成中在光致抗蚀剂图案上进行UV烘烤的半导体器件制造系统包括用特定光致抗蚀剂涂覆晶片的光致抗蚀剂涂覆单元; 在涂有光致抗蚀剂的晶片上形成光刻胶图案的显影单元; 以及交联和流动烘烤单元，用于交联光致抗蚀剂图案，随后流动烘烤交联的光致抗蚀剂图案，其中交联和流动烘焙单元在流动烘烤之前热稳定光致抗蚀剂图案。

9. 发明授权

US07629583B2 Method and apparatus for analyzing a photoresist film 有权
标题翻译：用于分析光致抗蚀剂膜的方法和装置
公开(公告)号：US07629583B2
公开(公告)日：2009-12-08
申请号：US11938402
申请日：2007-11-12
申请人： Young-Hoon Kim , Hong Lee , Youn-Kyung Wang
发明人： Young-Hoon Kim , Hong Lee , Youn-Kyung Wang
IPC分类号： G01J5/02
CPC分类号： G01N21/3563 , G01N21/8422
摘要： In a method for analyzing photoresist, light having a wavelength which responds to a photoresist film is selected. The photoresist film is exposed to the selected light. Changes of components and properties of the photoresist film are analyzed while the photoresist film is being exposed to the selected light.
摘要翻译：在分析光致抗蚀剂的方法中，选择具有响应于光致抗蚀剂膜的波长的光。光致抗蚀剂膜暴露于选定的光。当光致抗蚀剂膜暴露于所选择的光时，分析光致抗蚀剂膜的组分和性质的变化。

10. 发明授权

US07494761B2 Cyclodextrin derivative, photoresist composition including the cyclodextrin derivative and method of forming a pattern using the photoresist composition 有权
标题翻译：环糊精衍生物，包括环糊精衍生物的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成图案的方法
公开(公告)号：US07494761B2
公开(公告)日：2009-02-24
申请号：US11853047
申请日：2007-09-11
申请人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Hong Lee , Do-Young Kim
发明人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Hong Lee , Do-Young Kim
IPC分类号： G03F7/004 , G03F7/30 , C08B31/00
CPC分类号： C07H3/00 , G03F7/0392 , G03F7/0395 , Y10S430/112
摘要： A photoresist film is formed on an object layer of a semiconductor device by coating the object layer with a photoresist composition including about 7 percent to about 14 percent by weight of a cyclodextrin derivative, about 0.1 percent to about 0.5 percent by weight of a photoacid generator, and a remainder of an organic solvent. The cyclodextrin derivative includes a β-cyclodextrin moiety and at least one alkyl carbonate group.
摘要翻译：通过用光致抗蚀剂组合物涂覆目标层，形成光致抗蚀剂膜，所述光致抗蚀剂组合物包含约7-约14重量％的环糊精衍生物，约0.1-约0.5重量％的光酸产生剂，剩余的有机溶剂。环糊精衍生物包括β-环糊精部分和至少一个碳酸烷基酯基团。

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