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1. 发明授权

US07494761B2 Cyclodextrin derivative, photoresist composition including the cyclodextrin derivative and method of forming a pattern using the photoresist composition 有权
标题翻译：环糊精衍生物，包括环糊精衍生物的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成图案的方法
公开(公告)号：US07494761B2
公开(公告)日：2009-02-24
申请号：US11853047
申请日：2007-09-11
申请人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Hong Lee , Do-Young Kim
发明人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Hong Lee , Do-Young Kim
IPC分类号： G03F7/004 , G03F7/30 , C08B31/00
CPC分类号： C07H3/00 , G03F7/0392 , G03F7/0395 , Y10S430/112
摘要： A photoresist film is formed on an object layer of a semiconductor device by coating the object layer with a photoresist composition including about 7 percent to about 14 percent by weight of a cyclodextrin derivative, about 0.1 percent to about 0.5 percent by weight of a photoacid generator, and a remainder of an organic solvent. The cyclodextrin derivative includes a β-cyclodextrin moiety and at least one alkyl carbonate group.
摘要翻译：通过用光致抗蚀剂组合物涂覆目标层，形成光致抗蚀剂膜，所述光致抗蚀剂组合物包含约7-约14重量％的环糊精衍生物，约0.1-约0.5重量％的光酸产生剂，剩余的有机溶剂。环糊精衍生物包括β-环糊精部分和至少一个碳酸烷基酯基团。

2. 发明授权

US07491484B2 Photoresist compositions and methods of forming a pattern using the same 失效
标题翻译：光刻胶组合物和使用其形成图案的方法
公开(公告)号：US07491484B2
公开(公告)日：2009-02-17
申请号：US11869933
申请日：2007-10-10
申请人： Hyo-Jin Yun , Young-Gil Kwon , Do-Young Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim
发明人： Hyo-Jin Yun , Young-Gil Kwon , Do-Young Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.
摘要翻译：在光致抗蚀剂组合物和使用其形成图案的方法中，光致抗蚀剂组合物包含约0.1至约0.5重量％的包含带正电荷的锍离子的光酸产生剂和具有亲水性羧基的带负电荷的磺酸根离子，约为 4至约10重量％的树脂和溶剂。

3. 发明申请

US20080160448A1 PHOTORESIST COMPOSITIONS AND METHODS OF FORMING A PATTERN USING THE SAME 失效
标题翻译：光刻胶组合物和形成使用该图案的图案的方法
公开(公告)号：US20080160448A1
公开(公告)日：2008-07-03
申请号：US11869933
申请日：2007-10-10
申请人： Hyo-Jin Yun , Young-Gil Kwon , Do-Young Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim
发明人： Hyo-Jin Yun , Young-Gil Kwon , Do-Young Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim
IPC分类号： G03F7/004 , G03F7/26
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.
摘要翻译：在光致抗蚀剂组合物和使用其形成图案的方法中，光致抗蚀剂组合物包含约0.1至约0.5重量％的包含带正电荷的锍离子的光酸产生剂和具有亲水性羧基的带负电荷的磺酸根离子，约为 4至约10重量％的树脂和溶剂。

4. 发明授权

US07527913B2 Photoacid generators, photoresist composition including the same and method of forming pattern using the same 失效
标题翻译：光生酸产生剂，包含其的光致抗蚀剂组合物和使用其形成图案的方法
公开(公告)号：US07527913B2
公开(公告)日：2009-05-05
申请号：US12011226
申请日：2008-01-24
申请人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Do-Young Kim , Jae-Hee Choi , Se-Kyung Baek
发明人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Do-Young Kim , Jae-Hee Choi , Se-Kyung Baek
IPC分类号： G03F7/004 , G03F7/30 , C07C69/00
CPC分类号： C07D493/08 , C07C309/12 , C07C381/12 , C07C2603/74 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition includes about 4% to about 10% by weight of a photoresist resin, about 0.1% to about 0.5% by weight of a photoacid generator having a sulfonium-salt cationic group and a sulfonium-salt anionic group containing a carboxyl group as a hydrophilic site and a remainder of a solvent. The photoresist composition may form a photoresist pattern having a uniform profile.
摘要翻译：光致抗蚀剂组合物包括约4重量％至约10重量％的光致抗蚀剂树脂，约0.1重量％至约0.5重量％的具有锍盐阳离子基团的光酸产生剂和含有羧基的锍盐阴离子基团亲水部位和剩余的溶剂。光致抗蚀剂组合物可以形成具有均匀轮廓的光致抗蚀剂图案。

5. 发明申请

US20080182203A1 Photoacid generators, photoresist composition including the same and method of forming pattern using the same 失效
标题翻译：光生酸产生剂，包含其的光致抗蚀剂组合物和使用其形成图案的方法
公开(公告)号：US20080182203A1
公开(公告)日：2008-07-31
申请号：US12011226
申请日：2008-01-24
申请人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Do-Young Kim , Jae-Hee Choi , Se-Kyung Baek
发明人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Do-Young Kim , Jae-Hee Choi , Se-Kyung Baek
IPC分类号： G03F7/004 , C07D333/16 , C07D311/06 , G03F7/26 , C07C301/00
CPC分类号： C07D493/08 , C07C309/12 , C07C381/12 , C07C2603/74 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition includes about 4% to about 10% by weight of a photoresist resin, about 0.1% to about 0.5% by weight of a photoacid generator having a sulfonium-salt cationic group and a sulfonium-salt anionic group containing a carboxyl group as a hydrophilic site and a remainder of a solvent. The photoresist composition may form a photoresist pattern having a uniform profile.
摘要翻译：光致抗蚀剂组合物包括约4重量％至约10重量％的光致抗蚀剂树脂，约0.1重量％至约0.5重量％的具有锍盐阳离子基团的光酸产生剂和含有羧基的锍盐阴离子基团亲水部位和剩余的溶剂。光致抗蚀剂组合物可以形成具有均匀轮廓的光刻胶图案。

6. 发明申请

US20070148590A1 Siloxane compound, photoresist composition including the siloxane compound and method of forming a pattern using the photoresist composition 失效
标题翻译：硅氧烷化合物，包含硅氧烷化合物的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成图案的方法
公开(公告)号：US20070148590A1
公开(公告)日：2007-06-28
申请号：US11640172
申请日：2006-12-18
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Do-Young Kim
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Do-Young Kim
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , C07F7/21 , G03F7/0045 , G03F7/0397 , G03F7/0755 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/146 , Y10S430/167
摘要： Disclosed are a siloxane compound, a photoresist composition using the same, and a method of forming a pattern, wherein the siloxane compound is having a general formula: wherein R1 is a tertiary butyl group or a 1-(tert-butoxy)ethyl group, and R2 and R3 is each independently a lower alkyl group having 1 to 4 carbon atoms.
摘要翻译：公开了硅氧烷化合物，使用其的光致抗蚀剂组合物和形成图案的方法，其中硅氧烷化合物具有以下通式：其中R1是叔丁基或1-（叔丁氧基）乙基，并且R 2和R 3各自独立地为具有1至4个碳原子的低级烷基。

7. 发明授权

US07485407B2 Siloxane compound, photoresist composition including the siloxane compound and method of forming a pattern using the photoresist composition 失效
标题翻译：硅氧烷化合物，包含硅氧烷化合物的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成图案的方法
公开(公告)号：US07485407B2
公开(公告)日：2009-02-03
申请号：US11640172
申请日：2006-12-18
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Do-Young Kim
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Do-Young Kim
IPC分类号： G03C1/73 , G03F7/20 , G03F7/30 , G03F7/36 , C07F7/21
CPC分类号： G03F7/0757 , C07F7/21 , G03F7/0045 , G03F7/0397 , G03F7/0755 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/146 , Y10S430/167
摘要： Disclosed are a siloxane compound, a photoresist composition using the same, and a method of forming a pattern, wherein the siloxane compound is having a general formula: wherein R1 is a tertiary butyl group or a 1-(tert-butoxy)ethyl group, and R2 and R3 is each independently a lower alkyl group having 1 to 4 carbon atoms.
摘要翻译：公开了硅氧烷化合物，使用其的光致抗蚀剂组合物和形成图案的方法，其中硅氧烷化合物具有以下通式：其中R1是叔丁基或1-（叔丁氧基）乙基，并且R 2和R 3各自独立地为具有1至4个碳原子的低级烷基。

8. 发明授权

US08785081B2 Mask for laser induced thermal imaging and method of fabricating organic electro-luminescence display device using the same 有权
标题翻译：用于激光诱导热成像的掩模和使用其形成有机电致发光显示装置的方法
公开(公告)号：US08785081B2
公开(公告)日：2014-07-22
申请号：US13024271
申请日：2011-02-09
申请人： Do-Young Kim , Young-Gil Kwon , Seung-Mook Lee , Dae-Hoon Kim , Sun-Hoe Kim , Min-Chul Suh
发明人： Do-Young Kim , Young-Gil Kwon , Seung-Mook Lee , Dae-Hoon Kim , Sun-Hoe Kim , Min-Chul Suh
IPC分类号： G03F1/00
CPC分类号： B41M3/003 , B41M3/00 , H01L51/0013
摘要： A mask for laser induced thermal imaging and a method of fabricating an organic electro-luminescence display device using the mask. A mask includes a transparent substrate including a transmitting region; a reflective layer pattern on a first surface of the transparent substrate other than the transmitting region; and a scattering unit on at least one of the first surface or a second surface opposite the first surface of the transparent substrate, and the scattering unit is at a position corresponding to the reflective layer pattern. The mask can accurately irradiate a laser to a donor substrate and prevent or reduce damage of the laser generator due to the laser beam being reflected by the mask.
摘要翻译：用于激光诱导热成像的掩模和使用该掩模制造有机电致发光显示装置的方法。掩模包括包括透射区域的透明基板; 在所述透明基板的除了所述透射区域以外的第一表面上的反射层图案; 以及在与透明基板的第一表面相对的第一表面或第二表面中的至少一个上的散射单元，并且散射单元处于与反射层图案对应的位置。掩模可以准确地将激光照射到施主衬底，并且由于激光束被掩模反射而防止或减少激光发生器的损伤。

9. 发明授权

US09190849B2 Apparatus and method for performing wireless charging 有权
标题翻译：用于执行无线充电的装置和方法
公开(公告)号：US09190849B2
公开(公告)日：2015-11-17
申请号：US13047302
申请日：2011-03-14
申请人： Eun-Tae Won , Jae-Seung Son , Joon-Ho Park , Jun-Ho Koh , Hee-Won Jung , Do-Young Kim , Seung-Hoon Park
发明人： Eun-Tae Won , Jae-Seung Son , Joon-Ho Park , Jun-Ho Koh , Hee-Won Jung , Do-Young Kim , Seung-Hoon Park
IPC分类号： G07B17/00 , H02J5/00 , G06Q30/06 , G06Q50/06 , G06Q40/00 , H02J7/00 , H02J7/02
CPC分类号： H02J50/40 , G06Q30/06 , G06Q40/10 , G06Q40/12 , G06Q50/06 , H02J5/005 , H02J7/0004 , H02J7/0054 , H02J7/025 , H02J50/10 , H02J50/50 , H02J50/80
摘要： A wireless charging method includes searching one or more rechargeable electronic devices, receiving power service information from one or more searched electronic devices, determining whether the one or more searched electronic devices are rechargeable based on the received power service information, and if the one or more searched electronic devices are rechargeable, receiving power from the electronic devices.
摘要翻译：无线充电方法包括搜索一个或多个可充电电子设备，从一个或多个搜索到的电子设备接收电力服务信息，基于接收到的电力服务信息确定一个或多个搜索到的电子设备是否可再充电，以及如果一个或多个搜索的电子设备是可充电的，从电子设备接收电力。

10. 发明授权

US09159436B2 Reading method of non-volatile memory device 有权
标题翻译：非易失性存储器件的读取方法
公开(公告)号：US09159436B2
公开(公告)日：2015-10-13
申请号：US13620466
申请日：2012-09-14
申请人： Do-Young Kim
发明人： Do-Young Kim
IPC分类号： G11C16/26 , G11C16/24 , G11C16/34
CPC分类号： G11C16/26 , G11C16/24 , G11C16/3418
摘要： A non-volatile memory device includes a first selection transistor, a second selection transistor, and a plurality of memory cells serially coupled between the first selection transistor and the second selection transistor. A reading method of the non-volatile memory device includes applying a read voltage to a gate of a selected memory cell; applying a first pass voltage to a gate of a memory cell adjacent to the selected memory cell, and applying a second pass voltage to gates of the other memory cells, wherein the selected memory cell is in one program state among first to Tth program states in a direction that threshold voltage is increased, where T is a natural number greater than 2, and the first pass voltage is decreased as the selected memory cell goes toward the Tth program state.
摘要翻译：非易失性存储器件包括第一选择晶体管，第二选择晶体管和串联耦合在第一选择晶体管和第二选择晶体管之间的多个存储单元。非易失性存储器件的读取方法包括将读取电压施加到所选存储单元的栅极; 对与所选择的存储单元相邻的存储单元的栅极施加第一通过电压，以及向其它存储单元的栅极施加第二通过电压，其中所选择的存储单元在第一至第T程序状态中处于一个程序状态阈值电压增加的方向，其中T是大于2的自然数，并且随着所选择的存储器单元朝向第T编程状态，第一通过电压减小。

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