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1. 发明申请

US20100078039A1 METHOD AND APPRATUS FOR MASK PELLICLE ADHESIVE RESIDUE CLEANING 失效
标题翻译：用于胶粘剂粘合剂残留清洁的方法和设备
公开(公告)号：US20100078039A1
公开(公告)日：2010-04-01
申请号：US12242472
申请日：2008-09-30
申请人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
发明人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
IPC分类号： B08B1/04 , B01J19/08 , A46B9/02 , A46B11/06
CPC分类号： B08B3/02 , B08B1/00 , B08B11/02 , G03F1/82 , Y10S134/902
摘要： Aspects of the invention generally provide methods and apparatus for cleaning adhesive residual on a photomask substrate. In one embodiment, the apparatus includes a processing cell, a support assembly configured to receive a photomask substrate disposed thereon disposed in the processing cell, a protection head assembly disposed above and facing the support assembly, and a head actuator configured to control the elevation of the protection head assembly relative to an upper surface of the support assembly. A cleaning device is provided and positioned to interact with the photomask substrate disposed on the support assembly. In another embodiment, a method of cleaning a periphery region of a photomask substrate includes providing a photomask substrate having a periphery portion and a center portion disposed on a support assembly in a processing cell, lowering a protection cover disposed in the processing cell to cover the center portion of the photomask substrate, providing a brush in the processing cell to clean the periphery portion of the photomask substrate.
摘要翻译：本发明的方面通常提供用于清洁光掩模基底上的粘合剂残留物的方法和装置。在一个实施例中，该设备包括处理单元，配置成接收布置在其上设置在处理单元中的光掩模基板的支撑组件，设置在支撑组件上方并面向支撑组件的保护头组件，以及头部致动器，保护头组件相对于支撑组件的上表面。提供清洁装置并定位成与设置在支撑组件上的光掩模基板相互作用。在另一个实施例中，一种清洁光掩模基板的外围区域的方法包括提供具有周边部分的光掩模基板和设置在处理单元中的支撑组件上的中心部分，降低设置在处理单元中的保护盖以覆盖在光掩模基板的中心部分，在处理单元中提供刷子以清洁光掩模基板的周边部分。

2. 发明授权

US08002899B2 Method and apparatus for mask pellicle adhesive residue cleaning 失效
标题翻译：面具防护薄膜胶粘剂残留物清洗方法和装置
公开(公告)号：US08002899B2
公开(公告)日：2011-08-23
申请号：US12242472
申请日：2008-09-30
申请人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
发明人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
IPC分类号： B08B7/04 , B08B7/00
CPC分类号： B08B3/02 , B08B1/00 , B08B11/02 , G03F1/82 , Y10S134/902
摘要： Aspects of the invention generally provide methods and apparatus for cleaning adhesive residual on a photomask substrate. In one embodiment, the apparatus includes a processing cell, a support assembly configured to receive a photomask substrate disposed thereon disposed in the processing cell, a protection head assembly disposed above and facing the support assembly, and a head actuator configured to control the elevation of the protection head assembly relative to an upper surface of the support assembly. A cleaning device is provided and positioned to interact with the photomask substrate disposed on the support assembly. In another embodiment, a method of cleaning a periphery region of a photomask substrate includes providing a photomask substrate having a periphery portion and a center portion disposed on a support assembly in a processing cell, lowering a protection cover disposed in the processing cell to cover the center portion of the photomask substrate, providing a brush in the processing cell to clean the periphery portion of the photomask substrate.
摘要翻译：本发明的方面通常提供用于清洁光掩模基底上的粘合剂残留物的方法和装置。在一个实施例中，该设备包括处理单元，配置成接收布置在其上设置在处理单元中的光掩模基板的支撑组件，设置在支撑组件上方并面向支撑组件的保护头组件，以及头部致动器，保护头组件相对于支撑组件的上表面。提供清洁装置并定位成与设置在支撑组件上的光掩模基板相互作用。在另一个实施例中，一种清洁光掩模基板的外围区域的方法包括提供具有周边部分的光掩模基板和设置在处理单元中的支撑组件上的中心部分，降低设置在处理单元中的保护盖以覆盖在光掩模基板的中心部分，在处理单元中提供刷子以清洁光掩模基板的周边部分。

3. 发明授权

US06726848B2 Apparatus and method for single substrate processing 失效
标题翻译：单基板加工的装置和方法
公开(公告)号：US06726848B2
公开(公告)日：2004-04-27
申请号：US10010240
申请日：2001-12-07
申请人： Eric Hansen , Victor Mimken , Martin Bleck , M. Rao Yalamanchili , John Rosato
发明人： Eric Hansen , Victor Mimken , Martin Bleck , M. Rao Yalamanchili , John Rosato
IPC分类号： H01L2100
CPC分类号： H01L21/02052 , B08B3/048 , B08B3/12 , H01L21/67028 , H01L21/67034 , H01L21/67057 , H01L21/67751
摘要： In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.
摘要翻译：在一种处理半导体衬底的方法中，将单个衬底放置在单衬底处理室中并进行湿蚀刻，清洁和/或干燥步骤。可以在单衬底处理室中暴露于单个衬底的蚀刻或清洁化学品，因为在蚀刻或清洁化学中引起湍流以使连接到衬底的流体的边界层变薄。超声波能量和/或室表面的扰动可能为边界层变薄提供湍流。根据根据本发明的方法的另一方面，兆声波能量可以被引导到单衬底处理室内的区域中以在衬底表面上产生边界层变薄的区域，并且单个衬底可以通过在室内的漂洗或清洁过程中，以优化区域内的清洁/漂洗性能。

4. 发明授权

US06230720B1 Single-operation method of cleaning semiconductors after final polishing 失效
标题翻译：最终抛光后清洗半导体的单次操作方法
公开(公告)号：US06230720B1
公开(公告)日：2001-05-15
申请号：US09606728
申请日：2000-06-29
申请人： M. Rao Yalamanchili , Kari B. Myli , Larry W. Shive
发明人： M. Rao Yalamanchili , Kari B. Myli , Larry W. Shive
IPC分类号： C23G102
CPC分类号： H01L21/02052 , Y10S134/902
摘要： A process for cleaning a final polished semiconductor wafer in a single operation (i.e., following final polishing, a process or action is directed at the wafer which includes drying the wafer only once, thereby yielding a polished wafer surface substantially free of contaminants). The process comprising contacting the polished wafer with an aqueous solution comprising an oxidizing agent to oxidize organic carbon on the surface of the polished wafer. After oxidizing the organic carbon, immersing the polished wafer in an megasonically agitated alkaline cleaning solution to reduce the surface concentration of contaminant particles exceeding 0.2 &mgr;m in diameter. Withdrawing the polished wafer from the alkaline cleaning solution and rinsing it with deionized water. After rinsing, immersing the polished wafer in an acidic cleaning solution to reduce the surface concentration of contaminant metal atoms. Withdrawing the polished wafer from the acidic cleaning solution and immersing it in an ozonated aqueous bath. Withdrawing the polished wafer from the aqueous bath and drying the wafer. The process is further characterized by the absence of a step in which the surface of the polished wafer is dried between oxidizing organic carbon on the surface and immersing the wafer in the ozonated aqueous bath.
摘要翻译：用于在单次操作中清洁最终抛光的半导体晶片的方法（即，在最终抛光之后，将晶片进行直接干燥，从而产生基本上没有污染物的抛光晶片表面）。该方法包括使抛光的晶片与包含氧化剂的水溶液接触以氧化抛光晶片的表面上的有机碳。氧化有机碳后，将经抛光的晶片浸入经过搅拌的碱性清洗溶液中，以减少直径超过0.2μm的污染物颗粒的表面浓度。从碱性清洁溶液中取出抛光的晶片，并用去离子水冲洗。冲洗后，将抛光的晶片浸入酸性清洗溶液中以降低污染金属原子的表面浓度。将抛光的晶片从酸性清洁溶液中取出并将其浸入臭氧水浴中。从水浴中取出抛光的晶片并干燥晶片。该方法的特征还在于不存在在表面上氧化有机碳并将晶片浸入臭氧水浴中之后干燥抛光晶片的表面的步骤。

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