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1. 发明申请

US20100078039A1 METHOD AND APPRATUS FOR MASK PELLICLE ADHESIVE RESIDUE CLEANING 失效
标题翻译：用于胶粘剂粘合剂残留清洁的方法和设备
公开(公告)号：US20100078039A1
公开(公告)日：2010-04-01
申请号：US12242472
申请日：2008-09-30
申请人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
发明人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
IPC分类号： B08B1/04 , B01J19/08 , A46B9/02 , A46B11/06
CPC分类号： B08B3/02 , B08B1/00 , B08B11/02 , G03F1/82 , Y10S134/902
摘要： Aspects of the invention generally provide methods and apparatus for cleaning adhesive residual on a photomask substrate. In one embodiment, the apparatus includes a processing cell, a support assembly configured to receive a photomask substrate disposed thereon disposed in the processing cell, a protection head assembly disposed above and facing the support assembly, and a head actuator configured to control the elevation of the protection head assembly relative to an upper surface of the support assembly. A cleaning device is provided and positioned to interact with the photomask substrate disposed on the support assembly. In another embodiment, a method of cleaning a periphery region of a photomask substrate includes providing a photomask substrate having a periphery portion and a center portion disposed on a support assembly in a processing cell, lowering a protection cover disposed in the processing cell to cover the center portion of the photomask substrate, providing a brush in the processing cell to clean the periphery portion of the photomask substrate.
摘要翻译：本发明的方面通常提供用于清洁光掩模基底上的粘合剂残留物的方法和装置。在一个实施例中，该设备包括处理单元，配置成接收布置在其上设置在处理单元中的光掩模基板的支撑组件，设置在支撑组件上方并面向支撑组件的保护头组件，以及头部致动器，保护头组件相对于支撑组件的上表面。提供清洁装置并定位成与设置在支撑组件上的光掩模基板相互作用。在另一个实施例中，一种清洁光掩模基板的外围区域的方法包括提供具有周边部分的光掩模基板和设置在处理单元中的支撑组件上的中心部分，降低设置在处理单元中的保护盖以覆盖在光掩模基板的中心部分，在处理单元中提供刷子以清洁光掩模基板的周边部分。

2. 发明授权

US08002899B2 Method and apparatus for mask pellicle adhesive residue cleaning 失效
标题翻译：面具防护薄膜胶粘剂残留物清洗方法和装置
公开(公告)号：US08002899B2
公开(公告)日：2011-08-23
申请号：US12242472
申请日：2008-09-30
申请人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
发明人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
IPC分类号： B08B7/04 , B08B7/00
CPC分类号： B08B3/02 , B08B1/00 , B08B11/02 , G03F1/82 , Y10S134/902
摘要： Aspects of the invention generally provide methods and apparatus for cleaning adhesive residual on a photomask substrate. In one embodiment, the apparatus includes a processing cell, a support assembly configured to receive a photomask substrate disposed thereon disposed in the processing cell, a protection head assembly disposed above and facing the support assembly, and a head actuator configured to control the elevation of the protection head assembly relative to an upper surface of the support assembly. A cleaning device is provided and positioned to interact with the photomask substrate disposed on the support assembly. In another embodiment, a method of cleaning a periphery region of a photomask substrate includes providing a photomask substrate having a periphery portion and a center portion disposed on a support assembly in a processing cell, lowering a protection cover disposed in the processing cell to cover the center portion of the photomask substrate, providing a brush in the processing cell to clean the periphery portion of the photomask substrate.
摘要翻译：本发明的方面通常提供用于清洁光掩模基底上的粘合剂残留物的方法和装置。在一个实施例中，该设备包括处理单元，配置成接收布置在其上设置在处理单元中的光掩模基板的支撑组件，设置在支撑组件上方并面向支撑组件的保护头组件，以及头部致动器，保护头组件相对于支撑组件的上表面。提供清洁装置并定位成与设置在支撑组件上的光掩模基板相互作用。在另一个实施例中，一种清洁光掩模基板的外围区域的方法包括提供具有周边部分的光掩模基板和设置在处理单元中的支撑组件上的中心部分，降低设置在处理单元中的保护盖以覆盖在光掩模基板的中心部分，在处理单元中提供刷子以清洁光掩模基板的周边部分。

3. 发明申请

US20100028813A1 BACKSIDE CLEANING OF SUBSTRATE 审中-公开
标题翻译：基板的背面清洁
公开(公告)号：US20100028813A1
公开(公告)日：2010-02-04
申请号：US12185595
申请日：2008-08-04
申请人： Banqiu Wu , Ajay Kumar , Amitabh Sabharwal , Roman Gouk , James S. Papanu
发明人： Banqiu Wu , Ajay Kumar , Amitabh Sabharwal , Roman Gouk , James S. Papanu
IPC分类号： G03F7/20 , B08B13/00 , B08B7/00 , B08B3/12
CPC分类号： G03F1/82 , G03F1/44 , G03F1/64
摘要： A pellicle cover, system, and method for cleaning a photomask are disclosed. A pellicle cover is disposed over a photomask and pellicle without damaging the markings surrounding the mask pattern area. The pellicle cover can be practicably implemented in an improved photomask cleaning system and process in which the backside of the photomask may be cleaned without removing the pellicle from the patterned surface.
摘要翻译：公开了一种用于清洁光掩模的防护薄膜组件盖，系统和方法。防护薄膜组件设置在光掩模和防护薄膜组件上，而不会损坏围绕图案区域的标记。防护薄膜组件盖可以在改进的光掩模清洁系统和其中可以清洁光掩模的背面而不从图案化表面去除防护薄膜的工艺实现。

4. 发明申请

US20090255555A1 Advanced cleaning process using integrated momentum transfer and controlled cavitation 审中-公开
标题翻译：使用积分动量传递和受控空化的先进清洁过程
公开(公告)号：US20090255555A1
公开(公告)日：2009-10-15
申请号：US12082750
申请日：2008-04-14
申请人： Roman Gouk , Chung-Huan Jeon , Zhiyong Li , Madhava Rao Yalamanchili , James S. Papanu
发明人： Roman Gouk , Chung-Huan Jeon , Zhiyong Li , Madhava Rao Yalamanchili , James S. Papanu
IPC分类号： B08B3/12 , B08B13/00
CPC分类号： B08B3/12 , B08B3/02 , B08B7/028 , G03F1/82 , H01L21/67051
摘要： A method and apparatus for cleaning a workpiece are disclosed. A gas and cleaning solution are supplied to an atomizing nozzle which atomizes the cleaning solution and sprays the top surface of a workpiece with an atomized spray. A liquid having a controlled gas content is flowed to the top surface of the workpiece from a rinse nozzle. Megasonic energy is applied from the backside of the workpiece.
摘要翻译：公开了一种用于清洁工件的方法和设备。将气体和清洁溶液供应到雾化喷嘴，该雾化喷嘴使清洁溶液雾化并用雾化喷雾喷射工件的顶表面。具有受控气体含量的液体从冲洗喷嘴流到工件的顶表面。从工件的背面施加超声波能量。

5. 发明申请

US20160315009A1 UV-CURE PRE-TREATMENT OF CARRIER FILM FOR WAFER DICING USING HYBRID LASER SCRIBING AND PLASMA ETCH APPROACH 有权
标题翻译：使用混合激光扫描和等离子体蚀刻方法进行波长涂覆的载体膜的UV固化预处理
公开(公告)号：US20160315009A1
公开(公告)日：2016-10-27
申请号：US14697391
申请日：2015-04-27
申请人： Wei-Sheng Lei , Brad Eaton , Jungrae Park , Ajay Kumar , James S. Papanu , Prabhat Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Jungrae Park , Ajay Kumar , James S. Papanu , Prabhat Kumar
IPC分类号： H01L21/78 , H01L21/683 , H01L21/268 , H01L21/67 , H01L21/308 , H01L21/3065
CPC分类号： H01L21/78 , H01L21/268 , H01L21/3065 , H01L21/3086 , H01L21/67069 , H01L21/67207 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side of the semiconductor wafer includes adhering a back side the semiconductor wafer on the dicing tape of a substrate carrier. Subsequent to adhering the semiconductor wafer on a dicing tape, the dicing tape is treated with a UV-cure process. Subsequent to treating the dicing tape with the UV-cure process, a dicing mask is formed on the front side of the semiconductor wafer, the dicing mask covering and protecting the integrated circuits. The dicing mask is patterned with a laser scribing process to provide gaps in the dicing mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the dicing mask layer to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，在半导体晶片的正面上切割具有多个集成电路的半导体晶片的方法包括将半导体晶片的背面粘附在基板载体的切割带上。在将半导体晶片粘附在切割带上之后，用UV固化工艺处理切割带。在通过UV固化处理处理切割带之后，在半导体晶片的前侧形成切割掩模，该切割掩模覆盖并保护集成电路。用激光刻划工艺对切割掩模进行图案化，以在切割掩模之间提供间隙，在半导体晶片的间隙暴露在集成电路之间。通过切割掩模层中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

6. 发明授权

US09196536B1 Hybrid wafer dicing approach using a phase modulated laser beam profile laser scribing process and plasma etch process 有权
标题翻译：使用相位调制激光束轮廓激光划线工艺和等离子体蚀刻工艺的混合晶片切割方法
公开(公告)号：US09196536B1
公开(公告)日：2015-11-24
申请号：US14497027
申请日：2014-09-25
申请人： Jungrae Park , Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
发明人： Jungrae Park , Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/78 , H01L21/3065 , H01L21/67 , H01J37/32 , B23K26/40 , B23K26/36
CPC分类号： H01L21/3065 , H01J37/32 , H01J37/32889 , H01J37/32899 , H01J37/32926 , H01J2237/2487 , H01J2237/334 , H01J2237/3341 , H01J2237/335 , H01L21/02057 , H01L21/30655 , H01L21/3081 , H01L21/67069 , H01L21/67092 , H01L21/67115 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a phase modulated laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。然后用相位调制的激光束轮廓激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

7. 发明授权

US09159624B1 Vacuum lamination of polymeric dry films for wafer dicing using hybrid laser scribing and plasma etch approach 有权
标题翻译：使用混合激光划线和等离子体蚀刻方法对用于晶片切割的聚合物干膜进行真空层压
公开(公告)号：US09159624B1
公开(公告)日：2015-10-13
申请号：US14589913
申请日：2015-01-05
申请人： Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/8234
CPC分类号： H01L21/78 , H01L21/6836 , H01L21/8234 , H01L2221/68327 , H01L2221/6834
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves laminating a polymeric mask layer onto a front side of the semiconductor wafer by dry film vacuum lamination, the polymeric mask layer covering and protecting the integrated circuits. The method also involves patterning the polymeric mask layer with a laser scribing process to provide gaps in the polymeric mask layer, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the gaps in the polymeric mask layer to singulate the integrated circuits. The method also involves, subsequent to plasma etching the semiconductor wafer, removing the polymeric mask layer.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个实例中，对具有多个集成电路的半导体晶片进行切割的方法包括通过干膜真空层压将聚合物掩模层层压到半导体晶片的正面上，该聚合物掩模层覆盖并保护集成电路。该方法还包括用激光划线工艺图案化聚合物掩模层，以在聚合物掩模层中提供间隙，间隙暴露集成电路之间的半导体晶片的区域。该方法还包括通过聚合物掩模层中的间隙等离子体蚀刻半导体晶片以对集成电路进行分离。该方法还涉及在等离子体蚀刻半导体晶片之后，去除聚合物掩模层。

8. 发明申请

US20150243559A1 HYBRID WAFER DICING APPROACH USING TEMPORALLY-CONTROLLED LASER SCRIBING PROCESS AND PLASMA ETCH 审中-公开
标题翻译：使用温度控制激光扫描过程和等离子体蚀刻的混合波形方法
公开(公告)号：US20150243559A1
公开(公告)日：2015-08-27
申请号：US14265139
申请日：2014-04-29
申请人： Jungrae Park , Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
发明人： Jungrae Park , Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/3065 , H01L21/67 , H01L21/308
CPC分类号： H01L21/78 , B23K26/0624 , B23K26/0661 , B23K26/18 , B23K26/364 , B23K2101/40 , B23K2103/166 , B23K2103/50 , B23K2103/56 , H01L21/02057 , H01L21/3065 , H01L21/30655 , H01L21/3086 , H01L21/31116 , H01L21/31138 , H01L21/32135
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a temporally-controlled laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The temporally-controlled laser scribing process involves scribing with a laser beam having a profile comprising a leading femto-second portion and a trailing lower-intensity, higher fluence portion. The method also involves plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模包括覆盖并保护集成电路的层。该方法还包括用时间控制的激光划线工艺对掩模进行图案化，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。时间控制的激光划线方法包括用具有包括前导毫微微秒部分和尾随较低强度，较高注量部分的轮廓的激光束划线。该方法还包括通过图案化掩模中的间隙等离子体蚀刻半导体晶片以对集成电路进行分离。

9. 发明授权

US08912078B1 Dicing wafers having solder bumps on wafer backside 有权
标题翻译：切割晶片在晶片背面具有焊料凸块
公开(公告)号：US08912078B1
公开(公告)日：2014-12-16
申请号：US14254632
申请日：2014-04-16
申请人： Wei-Sheng Lei , James S. Papanu , Aparna Iyer , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Aparna Iyer , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/78 , H01L21/683
CPC分类号： H01L21/78 , H01L21/268 , H01L21/3065 , H01L21/6836 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0401 , H01L2224/05568 , H01L2224/0557 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/12041 , H01L2224/11 , H01L2924/00
摘要： Approaches for hybrid laser scribe and plasma etch dicing process for a wafer having backside solder bumps are described. For example, a method of dicing a semiconductor wafer having integrated circuits on a front side thereof and corresponding arrays of metal bumps on a backside thereof involves applying a dicing tape to the backside of the semiconductor wafer, the dicing tape covering the arrays of metal bumps. The method also involves, subsequently, forming a mask on the front side of the semiconductor wafer, the mask covering the integrated circuits. The method also involves forming scribe lines on the front side of the semiconductor wafer with a laser scribing process, the scribe lines formed in the mask and between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits, the mask protecting the integrated circuits during the plasma etching.
摘要翻译：描述了具有背面焊料凸块的晶片的混合激光划片和等离子体蚀刻切割工艺的方法。例如，在其前侧具有集成电路的半导体晶片的切割方法和背面的金属凸块的相应阵列包括在半导体晶片的背面施加切割带，该切割带覆盖金属凸块的阵列。该方法还包括在半导体晶片的正面上形成掩模，该掩模覆盖集成电路。该方法还涉及通过激光划线工艺在半导体晶片的正面上形成刻划线，在掩模中形成划线并在集成电路之间。该方法还包括通过划线等离子体蚀刻半导体晶片以对集成电路进行分离，掩模在等离子体蚀刻期间保护集成电路。

10. 发明申请

US20170256500A1 HYBRID WAFER DICING APPROACH USING A SPLIT BEAM LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS 有权
公开(公告)号：US20170256500A1
公开(公告)日：2017-09-07
申请号：US15060224
申请日：2016-03-03
申请人： Jungrae Park , Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
发明人： Jungrae Park , Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
IPC分类号： H01L23/544 , B23K10/00 , B23K26/0622 , H01L21/78
CPC分类号： H01L23/544 , A47G19/22 , A47G19/2272 , B23K10/003 , B23K26/0624 , B65D47/244 , B65D47/32 , H01L21/78 , H01L2223/5446
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a split laser beam laser scribing process, such as a split shaped laser beam laser scribing process, to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

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