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1. 发明申请

WO2005040917A2 SYSTEM AND METHOD FOR LITHOGRAPHY SIMULATION 审中-公开
标题翻译：系统和方法进行算术仿真
公开(公告)号：WO2005040917A2
公开(公告)日：2005-05-06
申请号：PCT/US2004/028864
申请日：2004-09-07
申请人： BRION TECHNOLOGIES, INC. , YE, Jun , LU, Yen-Wen , CAO, Yu , CHEN, Luoqi , CHEN, Xun
发明人： YE, Jun , LU, Yen-Wen , CAO, Yu , CHEN, Luoqi , CHEN, Xun
IPC分类号： G03F
CPC分类号： G06F17/5009 , G03F1/00 , G03F7/004 , G03F7/705 , G03F7/70666 , G06F17/5081 , G06F19/00 , G06F2217/12 , G06F2217/14 , G06T7/0004 , G06T2207/30148 , G21K5/00
摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and interdependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.
摘要翻译：这里描述和说明了许多发明。在一个方面，本发明涉及用于模拟，验证，检查，表征，确定和/或评估光刻设计，技术和/或系统的技术和系统，和/或由其执行的各个功能或使用的组件在其中。在一个实施例中，本发明是加速光刻特性和/或性质的光刻模拟，检查，表征和/或评估以及光刻系统和处理技术的效果和/或相互作用的系统和方法。在这方面，在一个实施例中，本发明采用光刻仿真系统架构，包括特定于应用的硬件加速器，以及用于加速和促进掩模设计的验证，表征和/或检查的处理技术，例如RET设计，包括对整个光刻工艺进行详细的仿真和表征，以验证设计在最终的晶片图案上实现和/或提供期望的结果。该系统包括：（1）通用目的型计算设备，用于执行在数据处理中具有分支和相互依赖性的基于案例的逻辑，以及（2）加速器子系统来执行大部分计算密集型任务。

2. 发明申请

WO2010059954A3 PROCESS OPTIMIZATION WITH FREE SOURCE AND FREE MASK 审中-公开
公开(公告)号：WO2010059954A3
公开(公告)日：2010-05-27
申请号：PCT/US2009/065359
申请日：2009-11-20
申请人： BRION TECHNOLOGIES INC. , CHEN, Luoqi , CAO, Yu , YE, Jun
发明人： CHEN, Luoqi , CAO, Yu , YE, Jun
IPC分类号： G03F1/14 , G03F7/20 , G06F17/50
摘要： The present invention relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present invention significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present invention allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present invention allows for free-form optimization, without the constraints required by conventional optimization techniques.

3. 发明申请

WO2010005957A1 ILLUMINATION OPTIMIZATION 审中-公开
标题翻译：照明优化
公开(公告)号：WO2010005957A1
公开(公告)日：2010-01-14
申请号：PCT/US2009/049792
申请日：2009-07-07
申请人： BRION TECHNOLOGIES, INC. , YE, Jun , CAO, Yu , FENG, Hanying
发明人： YE, Jun , CAO, Yu , FENG, Hanying
IPC分类号： G03F7/20
CPC分类号： G03F7/70441 , G03F7/70091 , G03F7/70666
摘要： A method of optimizing an illumination pupil shape for a lithographic process 1 comprises identifying a target pattern (206) to be imaged by said lithographic process. It further comprises identifying at least one optimization point (262) in said target pattern and identifying at least one design for manufacturing metric (270) per optimization point. Additionally it comprises selecting a set of illumination source points (274) based on the identified at least one design for manufacturing metric and determining the illumination pupil shape (284) based on the selected set of illumination source points.
摘要翻译：优化用于光刻工艺1的照明光瞳形状的方法包括识别通过所述光刻工艺成像的目标图案（206）。它还包括识别所述目标图案中的至少一个优化点（262），并且识别用于每个优化点的制造度量（270）的至少一个设计。另外，它包括基于所识别的用于制造度量的所述至少一个设计来选择一组照明源点（274），并且基于所选择的一组照明源点确定照明光瞳形状（284）。

4. 发明申请

WO2008151185A1 METHODS FOR PERFORMING MODEL-BASED LITHOGRAPHY GUIDED LAYOUT DESIGN 审中-公开
标题翻译：用于执行基于模型的LITHOGRAPHY指导布局设计的方法
公开(公告)号：WO2008151185A1
公开(公告)日：2008-12-11
申请号：PCT/US2008/065656
申请日：2008-06-03
申请人： BRION TECHNOLOGIES, INC. , YE, Jun , CAO, Yu , FENG, Hanying
发明人： YE, Jun , CAO, Yu , FENG, Hanying
IPC分类号： G03F1/14 , G03F7/20
CPC分类号： G06F17/5009 , G03F1/36 , G03F7/70433 , G03F7/70441 , G03F7/70666
摘要： Methods are disclosed to create efficient model-based Sub-Resolution Assist Features (MB-SRAF). An SRAF guidance map is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade the aerial image over the process window. In one embodiment, the SRAF guidance map is used to determine SRAF placement rules and/or to fine-tune already-placed SRAFs. The SRAF guidance map can be used directly to place SRAFs in a mask layout. Mask layout data including SRAFs may be generated, wherein the SRAFs are placed according to the SRAF guidance map. The SRAF guidance map can comprise an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature.
摘要翻译：公开了创建有效的基于模型的子分辨率辅助特征（MB-SRAF）的方法。创建SRAF指南图，其中每个设计目标边缘位置对于给定的场点投票，放置在该场点上的单像素SRAF是否将改善或降级过程窗口上的空中图像。在一个实施例中，SRAF引导图用于确定SRAF放置规则和/或微调已经放置的SRAF。 SRAF引导图可以直接用于将SRAF放置在掩码布局中。可以生成包括SRAF的掩模布局数据，其中根据SRAF引导图放置SRAF。 SRAF引导图可以包括图像，其中每个像素值指示如果像素被包括为子分辨率辅助特征的一部分，则像素是否将对掩模布局中的特征的边缘行为贡献积极。

5. 发明申请

WO2011051249A1 METHOD OF PATTERN SELECTION FOR SOURCE AND MASK OPTIMIZATION 审中-公开
标题翻译：用于源和掩模优化的图案选择方法
公开(公告)号：WO2011051249A1
公开(公告)日：2011-05-05
申请号：PCT/EP2010/066106
申请日：2010-10-26
申请人： ASML NETHERLANDS B.V. , LIU, Hua-Yu , LI, Jiangwei , LI, Zhi-Pan , CHEN, Hong , CHEN, Luoqi , ZHANG, Youping , YE, Jun , TSAl, Min-Chun , LU, Yen-Wen
发明人： LIU, Hua-Yu , LI, Jiangwei , LI, Zhi-Pan , CHEN, Hong , CHEN, Luoqi , ZHANG, Youping , YE, Jun , TSAl, Min-Chun , LU, Yen-Wen
IPC分类号： G03F1/14 , G03F7/20
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441 , G03F7/705 , G03F7/70666 , G06F17/50 , G06F17/5009
摘要： The present invention relates to a method of selecting a subset of patterns from a design, to a method of performing source and mask optimization, and to a computer program product for performing the method of selecting a subset of patterns from a design. According to certain aspects, the present invention enables coverage of the full design while lowering the computation cost by intelligently selecting a subset of patterns from a design in which the design or a modification of the design is configured to be imaged onto a substrate via a lithographic process. The method of selecting the subset of patterns from a design includes identifying a set of patterns from the design related to the predefined representation of the design. By selecting the subset of patterns according to the method, the selected subset of patterns constitutes a similar predefined representation of the design as the set of patterns.
摘要翻译：本发明涉及从设计中选择模式子集的方法，以及执行源和掩码优化的方法以及用于执行从设计中选择模式子集的方法的计算机程序产品。根据某些方面，本发明能够覆盖整个设计，同时降低计算成本，通过智能地从设计中选择图案子集，其中设计的设计或修改被配置为经由光刻成像到基板上处理。从设计中选择图案子集的方法包括从与设计的预定义表示相关的设计中识别一组图案。通过根据该方法选择模式子集，所选择的模式子集构成与模式集合相似的设计表示。

6. 发明申请

WO2007019269A2 SYSTEM AND METHOD FOR CREATING A FOCUS-EXPOSURE MODEL OF A LITHOGRAPHY PROCESS 审中-公开
标题翻译：用于创建光刻过程的聚焦曝光模型的系统和方法
公开(公告)号：WO2007019269A2
公开(公告)日：2007-02-15
申请号：PCT/US2006/030364
申请日：2006-08-02
申请人： BRION TECHNOLOGIES, INC.
发明人： YE, Jun , CAO, Yu , CHEN, Luoqi , LIU, Hua-Yu
IPC分类号： G03C5/00 , G03B27/42
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，需要的测量数量较少，聚焦曝光模型提供了更多的预测性和更强大的模型参数值，可以在过程窗口的任何位置使用。

7. 发明公开

EP1579273A2 SYSTEM AND METHOD FOR AERIAL IMAGE SENSING 审中-公开
标题翻译：系统和方法进行空中测量
公开(公告)号：EP1579273A2
公开(公告)日：2005-09-28
申请号：EP03701241.6
申请日：2003-01-08
申请人： Brion Technologies, Inc. , THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
发明人： PEASE, R. Fabian W. , YE, Jun
IPC分类号： G03F1/00
CPC分类号： G03F7/7085 , G03F1/84 , G03F7/70591 , G03F7/7065 , G03F7/70666 , G03F9/7069
摘要： A system to sense an aerial image (12) produced by optical lithographic equipment used in, for example, semiconductor fabrication. In one embodiment, the system includes a photo-electron emission device (44) which, in response to an aerial image projected thereon, emits electron (50) in a pattern corresponding to the light intensity distribution produced by the aerial image. Electron optics provides an enlarged pattern of the pattern in which the electrons are emitted. A sensing unit (64) senses the enlarged pattern. In another embodiment, the system employs a photo-conducting layer to project the aerial image thereon. The photo-conducting layer, in response to the projection of the aerial image thereon, produces local charge depletion corresponding to the light intensity distribution. A steering device delivers electrons to the photo-conducting layer to produce local re-charging currents in proportion to the local charge depletion. A pattern corresponding to the aerial image may be obtained from the re-charging currents.

8. 发明公开

EP1920369A2 SYSTEM AND METHOD FOR CREATING A FOCUS-EXPOSURE MODEL OF A LITHOGRAPHY PROCESS 审中-公开
标题翻译：系统和方法用于制造光刻工艺的焦点暴露模型
公开(公告)号：EP1920369A2
公开(公告)日：2008-05-14
申请号：EP06789361.0
申请日：2006-08-02
申请人： Brion Technologies, Inc.
发明人： YE, Jun , CAO, Yu , CHEN, Luoqi , LIU, Hua-Yu
IPC分类号： G06F17/50
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.

9. 发明申请

WO2009148972A1 METHODS FOR MODEL-BASED PROCESS SIMULATION 审中-公开
标题翻译：基于模型的过程模拟的方法
公开(公告)号：WO2009148972A1
公开(公告)日：2009-12-10
申请号：PCT/US2009/045726
申请日：2009-05-29
申请人： BRION TECHNOLOGIES, INC.
发明人： YE, Jun , CAO, Yu , GOOSSENS, Ronald , SHAO, Wenjin , KOONMEN, Jim
IPC分类号： G03F7/20
CPC分类号： B29C67/0088 , B29C64/386 , G03F7/70091 , G03F7/70458 , G03F7/705 , G03F7/70516 , G03F7/70525 , G06F17/50 , G06F17/5009 , G06F17/5081
摘要： Lithography simulation using a differential model. The differential model describes differences in the imaging characteristics of two scanners related to tunable and non-tunable scanner settings. A model for one of the two scanners is derived by using the model of the other scanner and the differential model. Similarly, a sensitivity model expresses the differences in the imaging characteristics of one scanner related to different scanner settings. Additionally, methods are provided for calibrating the differential model and the sensitivity model by comparison with printing results.
摘要翻译：使用差分模型的平版印刷模拟。差分模型描述了与可调谐和不可调扫描仪设置相关的两台扫描仪的成像特性的差异。通过使用其他扫描仪和差分模型的模型，推导出两种扫描仪之一的模型。类似地，灵敏度模型表示与不同扫描仪设置相关的一个扫描仪的成像特征的差异。另外，提供了与打印结果相比较来校准差分模型和灵敏度模型的方法。

10. 发明申请

WO2007030704A2 SYSTEM AND METHOD FOR MASK VERIFICATION USING AN INDIVIDUAL MASK ERROR MODEL 审中-公开
标题翻译：使用个人掩码错误模型进行掩蔽验证的系统和方法
公开(公告)号：WO2007030704A2
公开(公告)日：2007-03-15
申请号：PCT/US2006/035007
申请日：2006-09-08
申请人： BRION TECHNOLOGIES, INC.
发明人： YE, Jun , HUNSCHE, Stefan
IPC分类号： G06F17/50 , G03F1/00 , G21K5/00
CPC分类号： G06F17/5081 , G03F1/36 , G03F1/84 , G03F7/70441 , G03F7/705
摘要： Methods and systems are disclosed to inspect a manufactured lithographic mask, to extract physical mask data from mask inspection data, to determine systematic mask error data based on differences between the physical mask data and mask layout data, to generate systematic mask error parameters based on the systematic mask error data, to create an individual mask error model with systematic mask error parameters, to predict patterning performance of the lithographic process using a particular mask and/or a particular projection system, and to predict process corrections that optimize patterning performance and thus the final device yield.
摘要翻译：公开了用于检查制造的光刻掩模的方法和系统，以从掩模检查数据提取物理掩模数据，以基于物理掩模数据和掩模布局数据之间的差异来确定系统掩模误差数据，以基于系统掩模误差数据，以产生具有系统掩模误差参数的单独掩模误差模型，以预测使用特定掩模和/或特定投影系统的光刻工艺的图案化性能，以及预测优化图案化性能的工艺校正，最终装置产量。

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