专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08344373B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08344373B2
公开(公告)日：2013-01-01
申请号：US12891704
申请日：2010-09-27
申请人： Ayumu Sato , Hideya Kumomi , Ryo Hayashi , Tomohiro Watanabe
发明人： Ayumu Sato , Hideya Kumomi , Ryo Hayashi , Tomohiro Watanabe
IPC分类号： H01L29/786 , H01L21/84
CPC分类号： H01L29/7869
摘要： To achieve, in an oxide semiconductor thin layer transistor, both the stability of threshold voltage against electric stress and suppression of variation in the threshold voltage in a transfer characteristic. A thin film transistor includes an oxide semiconductor layer and a gate insulating layer disposed so as to be in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer contains hydrogen atoms and includes at least two regions that function as active layers of the oxide semiconductor and have different average hydrogen concentrations in the layer thickness direction; and when the regions functioning as the active layers of the oxide semiconductor are sequentially defined as, from the side of the gate insulating layer, a first region and a second region, the average hydrogen concentration of the first region is lower than the average hydrogen concentration of the second region.
摘要翻译：为了在氧化物半导体薄层晶体管中实现阈值电压对电应力的稳定性和抑制传输特性中阈值电压变化的两者。薄膜晶体管包括氧化物半导体层和设置成与氧化物半导体层接触的栅极绝缘层，其中氧化物半导体层包含氢原子，并且包括至少两个用作氧化物半导体的有源层的区域并且在层厚度方向上具有不同的平均氢浓度; 并且当用作氧化物半导体的有源层的区域依次定义为从栅极绝缘层的侧面开始第一区域和第二区域时，第一区域的平均氢浓度低于平均氢浓度的第二个地区。

2. 发明申请

US20110073856A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20110073856A1
公开(公告)日：2011-03-31
申请号：US12891704
申请日：2010-09-27
申请人： Ayumu Sato , Hideya Kumomi , Ryo Hayashi , Tomohiro Watanabe
发明人： Ayumu Sato , Hideya Kumomi , Ryo Hayashi , Tomohiro Watanabe
IPC分类号： H01L29/786 , H01L29/04 , H01L21/84
CPC分类号： H01L29/7869
摘要： To achieve, in an oxide semiconductor thin layer transistor, both the stability of threshold voltage against electric stress and suppression of variation in the threshold voltage in a transfer characteristic. A thin film transistor includes an oxide semiconductor layer and a gate insulating layer disposed so as to be in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer contains hydrogen atoms and includes at least two regions that function as active layers of the oxide semiconductor and have different average hydrogen concentrations in the layer thickness direction; and when the regions functioning as the active layers of the oxide semiconductor are sequentially defined as, from the side of the gate insulating layer, a first region and a second region, the average hydrogen concentration of the first region is lower than the average hydrogen concentration of the second region.
摘要翻译：为了在氧化物半导体薄层晶体管中实现阈值电压对电应力的稳定性和抑制传输特性中阈值电压变化的两者。薄膜晶体管包括氧化物半导体层和设置成与氧化物半导体层接触的栅极绝缘层，其中氧化物半导体层包含氢原子，并且包括至少两个用作氧化物半导体的有源层的区域并且在层厚度方向上具有不同的平均氢浓度; 并且当用作氧化物半导体的有源层的区域依次定义为从栅极绝缘层的侧面开始第一区域和第二区域时，第一区域的平均氢浓度低于平均氢浓度的第二个地区。

3. 发明授权

US08502217B2 Oxide semiconductor device including insulating layer and display apparatus using the same 有权
标题翻译：包括绝缘层的氧化物半导体器件和使用其的显示装置
公开(公告)号：US08502217B2
公开(公告)日：2013-08-06
申请号：US12679901
申请日：2008-11-27
申请人： Ayumu Sato , Ryo Hayashi , Hisato Yabuta , Tomohiro Watanabe
发明人： Ayumu Sato , Ryo Hayashi , Hisato Yabuta , Tomohiro Watanabe
IPC分类号： H01L29/12 , H01L23/04 , H01L31/036 , H01L31/0376 , H01L27/01
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/78606
摘要： Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4×1021 atoms/cm3 or less, and the third insulating layer having a hydrogen content of more than 4×1021 atoms/cm3.
摘要翻译：提供一种氧化物半导体器件，其包括氧化物半导体层和与氧化物半导体层接触的绝缘层，其中绝缘层包括：与氧化物半导体接触的第一绝缘层，其厚度为50nm以上并且包括含有Si和O的氧化物; 与第一绝缘层接触的第二绝缘层，其厚度为50nm以上，并且包括含有Si和N的氮化物; 以及与第二绝缘层接触的第三绝缘层，具有4×1021原子/ cm3以下的氢含量的第一绝缘层和第二绝缘层，以及氢含量大于4× 1021原子/ cm3。

4. 发明申请

US20100283049A1 OXIDE SEMICONDUCTOR DEVICE INCLUDING INSULATING LAYER AND DISPLAY APPARATUS USING THE SAME 有权
标题翻译：包含绝缘层的氧化物半导体器件和使用其的显示器件
公开(公告)号：US20100283049A1
公开(公告)日：2010-11-11
申请号：US12679901
申请日：2008-11-27
申请人： Ayumu Sato , Ryo Hayashi , Hisato Yabuta , Tomohiro Watanabe
发明人： Ayumu Sato , Ryo Hayashi , Hisato Yabuta , Tomohiro Watanabe
IPC分类号： H01L33/00 , H01L29/02 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/78606
摘要： Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4×1021 atoms/cm3 or less, and the third insulating layer having a hydrogen content of more than 4×1021 atoms/cm3.
摘要翻译：提供一种氧化物半导体器件，其包括氧化物半导体层和与氧化物半导体层接触的绝缘层，其中绝缘层包括：与氧化物半导体接触的第一绝缘层，其厚度为50nm以上并且包括含有Si和O的氧化物; 与第一绝缘层接触的第二绝缘层，其厚度为50nm以上，并且包括含有Si和N的氮化物; 以及与第二绝缘层接触的第三绝缘层，具有4×1021原子/ cm3以下的氢含量的第一绝缘层和第二绝缘层，以及氢含量大于4× 1021原子/ cm3。

5. 发明申请

US20140197079A1 METHOD OF EJECTING FAULTY ABSORBENT ARTICLE 有权
标题翻译：喷射非吸收性物品的方法
公开(公告)号：US20140197079A1
公开(公告)日：2014-07-17
申请号：US14130155
申请日：2012-06-29
申请人： Kazuhiko Takahashi , Tomohiro Watanabe , Masanobu Miyaki
发明人： Kazuhiko Takahashi , Tomohiro Watanabe , Masanobu Miyaki
IPC分类号： A61F13/15
CPC分类号： A61F13/15764 , A61F13/15772 , B07C5/342
摘要： A method of ejecting a faulty absorbent article which includes a step of detecting a failure region of an absorbent article in which a failure location of the absorbent article exists, and a type of a failure in the failure region, by identifying a shape of the absorbent article in the course of the manufacturing line, a step of deciding the absorbent article to be ejected based on the detection result of the failure region and the type of failure in the step of detecting, and a step of disengaging, from the manufacturing line, the absorbent article decided in the step of deciding, and then ejecting the absorbent article in the course of the manufacturing line. In the step of deciding, the number of absorbent articles to be ejected in the step of ejecting is decided according to the failure region and the type of the failure.
摘要翻译：一种排出有缺陷的吸收性物品的方法，其包括检测存在吸收性物品的故障位置的吸收性物品的失效区域的步骤，以及破坏区域的失效类型，通过识别吸收性物品的形状在制造过程中的制品，基于故障区域的检测结果和检测步骤中的故障类型来决定要排出的吸收性物品的步骤，以及从生产线脱离的步骤，所述吸收性物品在制造过程中决定，然后喷射吸收性物品的步骤中决定。在决定步骤中，根据故障区域和故障类型来决定喷射步骤中要喷射的吸收性物品的数量。

6. 发明申请

US20140196585A1 METHOD OF EJECTING ABSORBENT ARTICLES 审中-公开
标题翻译：吸收制品的喷射方法
公开(公告)号：US20140196585A1
公开(公告)日：2014-07-17
申请号：US14130144
申请日：2012-06-29
申请人： Kazuhiko Takahashi , Tomohiro Watanabe , Masanobu Miyaki
发明人： Kazuhiko Takahashi , Tomohiro Watanabe , Masanobu Miyaki
IPC分类号： A61F13/15
CPC分类号： A61F13/15585 , A61F13/15723 , A61F13/15764 , A61F13/15772 , B65H29/62 , Y10T83/0448
摘要： A method of ejecting absorbent articles which comprises: a step of providing a joint portion where a trailing end of a continuous web is joined to a starting end of a next continuous web, a step of controlling a timing of supplying the continuous web so as to locate the joint portion at a central portion of the absorbent articles in a machine direction, based on a length of the continuous web from the joint portion up to a cutting location and a dimension of the absorbent articles in the machine direction of the continuous web; and a step of disengaging only absorbent articles having the joint portion and ejecting the absorbent articles in the course of the manufacturing line.
摘要翻译：一种喷射吸收性物品的方法，该方法包括：提供一连接部分的连接部分的连接部分的步骤，连续卷材的后端连接到下一连续卷材的起始端;控制连续卷材供给时间的步骤，基于连续幅材从连接部分到切割位置的长度以及吸收制品在连续幅材的纵向方向上的尺寸，将接合部分沿机器方向定位在吸收制品的中心部分处; 以及仅在具有关节部分的吸收制品脱离并在生产线的过程中喷射吸收制品的步骤。

7. 发明授权

US07935947B2 Glass composition for ultraviolet light and optical device using the same 有权
标题翻译：用于紫外线的玻璃组合物和使用其的光学装置
公开(公告)号：US07935947B2
公开(公告)日：2011-05-03
申请号：US12515857
申请日：2008-11-05
申请人： Tomohiro Watanabe , Taihei Mukaide
发明人： Tomohiro Watanabe , Taihei Mukaide
IPC分类号： C03C1/00 , C01F17/00
CPC分类号： G02B1/00 , C03C3/062 , C03C3/095 , C03C4/0085
摘要： A glass composition for ultraviolet light is provided. The glass composition for ultraviolet light contains Lu, Si, and O in an amount of 99.99 weight % or more in total. The glass composition contains Lu in an amount of 26% or more and 39% or less in cation percent and Si in an amount of 61% or more and 74% or less in cation percent.
摘要翻译：提供一种用于紫外线的玻璃组合物。紫外线用玻璃组合物含有总共99.99重量％以上的Lu，Si，O。玻璃组合物含有阳离子含量为26％以上且39％以下的Lu，阳离子％为61％以上且74％以下的Si。

8. 发明申请

US20100084648A1 LIGHT-EMITTING APPARATUS AND PRODUCTION METHOD THEREOF 有权
标题翻译：发光装置及其生产方法
公开(公告)号：US20100084648A1
公开(公告)日：2010-04-08
申请号：US12530638
申请日：2008-04-03
申请人： Tomohiro Watanabe
发明人： Tomohiro Watanabe
IPC分类号： H01L29/786 , H01L21/30 , H01L33/00
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/127 , H01L27/3262 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L51/0026 , H01L51/0037 , H01L51/5237
摘要： Provided is a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor containing at least one element selected from In and Zn, the method including the steps of: forming a field effect transistor on a substrate; forming an insulating layer; forming a lower electrode on the insulating layer; forming an organic layer for constituting an organic EL device on the lower electrode; forming an upper electrode on the organic layer; and after the step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable as H2O from the field effect transistor during the step of forming the organic layer is less than 10−5 g/m2.
摘要翻译：提供一种制造具有驱动有机EL器件的场效应晶体管的发光装置的方法，所述场效应晶体管包括含有选自In和Zn中的至少一种元素的氧化物半导体，所述方法包括以下步骤：形成在衬底上的场效应晶体管; 形成绝缘层; 在绝缘层上形成下电极; 在下电极上形成用于构成有机EL器件的有机层; 在有机层上形成上电极; 并且在形成场效应晶体管的半导体层的步骤之后，并且在形成有机层的步骤之前，进行热处理，使得在形成所述有机层的步骤期间，来自场效应晶体管的作为H 2 O可解吸的成分的量有机层小于10-5g / m2。

9. 发明申请

US20080176014A1 Mat-shaped inorganic fiber thermal insulator, package thereof and thermal insulation structure thereof 审中-公开
标题翻译：垫状无机纤维绝热体及其绝热结构
公开(公告)号：US20080176014A1
公开(公告)日：2008-07-24
申请号：US12073956
申请日：2008-03-12
申请人： Keiji Otaki , Yuji Mita , Tomohiro Watanabe , Junichi Watanabe
发明人： Keiji Otaki , Yuji Mita , Tomohiro Watanabe , Junichi Watanabe
IPC分类号： B32B5/12
CPC分类号： D04H13/00 , E04B1/7662 , E04B1/78 , E04B2001/7683 , E04B2001/7695 , F16L59/026 , Y10T428/13 , Y10T428/237 , Y10T428/24124 , Y10T428/24314
摘要： A mat-shaped thermal insulator made of inorganic fiber, wherein at least a part of inorganic fibers is built-up in a direction parallel to lateral surfaces of the insulator, and said insulator is formed by cutting a fibrous built-up article formed by building-up inorganic fibers, to form cut built-up articles, rotating at least one of the cut articles by an angle of 90 degrees in a direction perpendicular to a longitudinal direction, to form a rotated built-up article in which the inorganic fibers are built-up in a direction parallel to lateral sides of the cut article, and integrating the cut articles and/or the rotated article transversally in a direction perpendicular to cutting direction. Preferably, the lateral surfaces of the insulator are inclined. Still preferably, longitudinal cuts are formed on the lateral surfaces of the insulator so as to make the insulator partially compressible.
摘要翻译：由无机纤维制成的垫状绝热体，其中至少一部分无机纤维在与绝缘子的侧面平行的方向上积聚，所述绝缘体通过切割由建筑物形成的纤维组合物形成 - 无机纤维，以形成切割的组合物，使至少一个切割制品在垂直于纵向方向的方向上旋转90度的角度，以形成旋转的组合物，其中无机纤维是在与切割物品的横向平行的方向上积聚，并且在垂直于切割方向的方向上将切割的物品和/或旋转的物品横向整合。优选地，绝缘体的侧表面是倾斜的。更优选地，在绝缘体的侧表面上形成纵向切口，以使得绝缘体部分地可压缩。

10. 发明申请

US20080131691A1 OPTICAL GLASS 失效
公开(公告)号：US20080131691A1
公开(公告)日：2008-06-05
申请号：US11932024
申请日：2007-10-31
申请人： Tomohiro Watanabe , Taihei Mukaide , Hidenosuke Itoh
发明人： Tomohiro Watanabe , Taihei Mukaide , Hidenosuke Itoh
IPC分类号： B32B17/00
CPC分类号： C03C4/0085 , C03B19/1438 , C03B2201/07 , C03B2201/23 , C03C3/085 , Y10T428/261
摘要： An optical glass that contains Si, Al, Mg, and O is provided. The optical glass contains Si in an amount of 40% or more and 60% or less, in cation percent, Al in an amount of 10% or more and 35% or less, in cation percent, and Mg in an amount of 20% or more and 35% or less, in cation percent. In the optical glass, the total amount of Si, Al, and Mg is 99.5% or more, in cation percent. Furthermore, the optical glass contains Fe and Na each in an amount of 0.01 wtppm or less and has a transmittance to a light having a wavelength of 248 nm of 40% or more at a thickness of 5 mm.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式