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1. 发明授权

US5306702A Process for producing Bi-Pb-Sr-Ca-Cu-O superconducting films 失效
标题翻译：生产Bi-Pb-Sr-Ca-Cu-O超导薄膜的方法
公开(公告)号：US5306702A
公开(公告)日：1994-04-26
申请号：US860505
申请日：1992-06-17
申请人： Atsushi Tanaka , Nobuo Kamehara , Koichi Niwa
发明人： Atsushi Tanaka , Nobuo Kamehara , Koichi Niwa
IPC分类号： C04B35/00 , C01G1/00 , C01G29/00 , C04B35/45 , C23C14/08 , C23C14/35 , C23C14/58 , H01L39/24 , B05D5/12 , C23C14/00
CPC分类号： C23C14/5806 , C23C14/087 , C23C14/58 , C23C14/5853 , H01L39/2451 , Y10S505/728 , Y10S505/73 , Y10S505/731 , Y10S505/742
摘要： A process for producing a Bi-based perovskite superconducting film, comprising the steps of forming on a substrate a Pb-film, containing Bi-base material film comprising Bi, Pb, Sr, Ca and Cu in a Bi:Pb:Sr:Ca:Cu molar ratio of (1.9 to 2.1):(1.2 to 2.2, preferably 1.5 to 1.8):2:(1.9 to 2.2):(3 to 3.5) and sintering the Pb-containing Bi-base material film in an oxygen-containing atmosphere. The sintering step includes a main sintering period of 20 to 120 minutes, in which the temperature is raised from a first temperature to a second temperature, with the second temperature being in a range of 850.degree. to 860.degree. C., and the temperature rise in the main sintering period of 20 to 120 minutes being from 3.degree. to 10.degree. C.
摘要翻译： PCT No.PCT / JP91 / 01423 Sec。 371日期：1992年6月17日 102（e）日期1992年6月17日PCT 1991年10月17日PCT公布。出版物WO92 / 06923 日本1992年04月30日。一种Bi系钙钛矿超导膜的制造方法，其特征在于，在基板上形成含有Bi，Pb，Sr，Ca，Cu的Bi基材料膜的Pb膜， Bi：Pb：Sr：Ca：Cu的摩尔比为（1.9〜2.1）：1.2〜2.2，优选为1.5〜1.8）：2：（1.9〜2.2）:( 3〜3.5）在含氧气氛中的基材膜。烧结步骤包括20〜120分钟的主烧结期间，其中温度从第一温度升至第二温度，第二温度在850℃至860℃的范围内，温度升高在20〜120分钟的主烧结时间为3〜10℃。

2. 发明授权

US5141917A Multilayer deposition method for forming Pb-doped Bi-Sr-Ca-Cu-O Superconducting films 失效
标题翻译：用于形成Pb掺杂的Bi-Sr-Ca-Cu-O超导膜的多层沉积方法
公开(公告)号：US5141917A
公开(公告)日：1992-08-25
申请号：US565209
申请日：1990-08-09
申请人： Atsushi Tanaka , Nobuo Kamehara , Koichi Niwa
发明人： Atsushi Tanaka , Nobuo Kamehara , Koichi Niwa
IPC分类号： B32B18/00 , C04B35/45 , H01L39/24
CPC分类号： C04B35/45 , H01L39/2422 , Y10S505/731 , Y10S505/732 , Y10S505/742
摘要： A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10 .sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.
摘要翻译：通过以下步骤形成具有高含量，几乎单相的高Tc相的钙钛矿型超导体膜：沉积至少一种第一材料的第一膜（例如，Bi-Sr-Ca- Cu-O系或Tl-Ba-Ca-Cu-O系），在基板上构成钙钛矿型超导体; 沉积至少一个第二材料的第二材料，该第二材料包含氧化物或元素（Bi 2 O 3，Tl 2 O 3，PbO x等，特别是PbO x），其在800℃下蒸气压大于10 -4 Pa至少作为主要成分基材; 从而形成第一和第二膜的堆叠; 并对第一和第二膜的堆叠进行热处理，以在基板上形成钙钛矿型超导膜。此外，确定沉积膜或叠层的优选组成。

3. 发明授权

US5585332A Process for preparing a perovskite Bi-containing superconductor film 失效
标题翻译：制备钙钛矿Bi超导膜的方法
公开(公告)号：US5585332A
公开(公告)日：1996-12-17
申请号：US378087
申请日：1995-01-25
申请人： Atsushi Tanaka , Nobuo Kamehara , Koichi Niwa
发明人： Atsushi Tanaka , Nobuo Kamehara , Koichi Niwa
IPC分类号： B32B18/00 , C04B35/45 , H01L39/24 , B05D5/12
CPC分类号： C04B35/45 , H01L39/2422 , Y10S505/731 , Y10S505/732 , Y10S505/742
摘要： A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10.sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.
摘要翻译：通过以下步骤形成具有高含量，几乎单相的高Tc相的钙钛矿型超导体膜：沉积至少一种第一材料的第一膜（例如，Bi-Sr-Ca- Cu-O系或Tl-Ba-Ca-Cu-O系），在基板上构成钙钛矿型超导体; 在800℃下至少沉积至少具有蒸气压大于10-4Pa的氧化物或元素（Bi 2 O 3，Tl 2 O 3，PbO x等，特别是PbO x）的第二材料的至少一个第二膜至少作为主要成分基材; 从而形成第一和第二膜的堆叠; 并对第一和第二膜的堆叠进行热处理，以在基板上形成钙钛矿型超导膜。此外，确定沉积膜或叠层的优选组成。

4. 发明授权

US5312803A Process for producing Bi- and Pb-containing oxide superconducting wiring films 失效
标题翻译：生产含Bi和Pb的氧化物超导布线膜的工艺
公开(公告)号：US5312803A
公开(公告)日：1994-05-17
申请号：US861823
申请日：1992-06-16
申请人： Atsushi Tanaka , Kazunori Yamanaka , Nobuo Kamehara , Koichi Niwa
发明人： Atsushi Tanaka , Kazunori Yamanaka , Nobuo Kamehara , Koichi Niwa
IPC分类号： H01L39/24 , B05D5/12
CPC分类号： H01L39/2464 , Y10S505/704 , Y10S505/73 , Y10S505/731 , Y10S505/732 , Y10S505/741 , Y10S505/742
摘要： In an oxide superconducting film wiring, when the line width is reduced, the evaporation of a component during firing becomes so vigorous that it becomes impossible to form a desired single crystal phase, which causes a significant lowering in the properties of the oxide superconducting wiring. This problem can be solved by preventing the evaporation of the evaporable component during the firing. Examples of this include a process wherein plate is placed above the superconductor forming material film wiring pattern on the substrate so as to face each other, the plate comprising a material having no chemical influence on the superconducting wiring, and a pattern of a material containing an evaporable component is arbitrarily formed, a process wherein a pattern having a smaller line width is sandwiched between patterns having a larger line width, and a process wherein the firing atmosphere or the concentration of the evaporable component in the pattern is varied depending upon the line width.
摘要翻译： PCT No.PCT / JP91 / 01422 Sec。 371日期：1992年6月16日 102（e）日期1992年6月16日PCT 1991年10月17日PCT公布。第WO92 / 07381号公报日期：1992年04月30日。在氧化物超导膜布线中，当线宽减小时，焙烧期间的成分的蒸发变得如此剧烈，不可能形成期望的单晶相，这导致了氧化物超导布线的性能。这个问题可以通过防止在焙烧期间的蒸发组分的蒸发来解决。其实例包括其中板被放置在基板上的超导体形成材料膜布线图案之上以彼此面对的方法，该板包括对超导布线不具有化学影响的材料，以及含有可以任意地形成蒸发部件，其中具有较小线宽的图形被夹在具有较大线宽的图案之间的处理，以及其中烧制气氛或图案中的可蒸发部件的浓度根据线宽变化的处理。

5. 发明授权

US09454197B2 Controller and semiconductor system 有权
标题翻译：控制器和半导体系统
公开(公告)号：US09454197B2
公开(公告)日：2016-09-27
申请号：US13982385
申请日：2011-01-28
申请人： Atsushi Tanaka , Hiroshi Murakami
发明人： Atsushi Tanaka , Hiroshi Murakami
IPC分类号： G06F1/32 , G06F1/26 , G06F1/00 , H02M3/155 , H02M3/157
CPC分类号： G06F1/28 , G06F1/26 , G06F1/266 , G06F1/32 , H02M3/155 , H02M3/157 , H02M3/158
摘要： A controller is formed as one chip, and controls a voltage regulator that supplies a power supply voltage to a CPU. The controller includes: an input unit for receiving a monitor voltage for monitoring the power supply voltage applied to the CPU; a control unit for detecting that the power supply voltage is decreased to a target voltage by the monitor voltage with the voltage regulator being in OFF state in a discharge mode; and an output unit for outputting a result signal indicating to make transition to a normal mode, when the power supply voltage has reached the target voltage. The control unit includes a calculation circuit, which is operated in accordance with a program. The calculation circuit is provided between the input unit and the output unit.
摘要翻译：控制器形成为一个芯片，并且控制向CPU提供电源电压的电压调节器。控制器包括：输入单元，用于接收用于监视施加到CPU的电源电压的监视电压; 控制单元，用于在放电模式下通过所述电压调节器处于截止状态来检测所述电源电压被所述监视电压降低到目标电压; 以及输出单元，用于当电源电压达到目标电压时，输出指示转换到正常模式的结果信号。控制单元包括根据程序操作的计算电路。计算电路设置在输入单元和输出单元之间。

6. 发明授权

US09387464B2 Iron oxide-zirconia composite oxide and method for producing same, and exhaust gas purification catalyst 有权
标题翻译：氧化铁 - 氧化锆复合氧化物及其制造方法以及废气净化催化剂
公开(公告)号：US09387464B2
公开(公告)日：2016-07-12
申请号：US14384283
申请日：2013-04-26
申请人： Masahide Miura , Atsushi Tanaka , Takahiro Suzuki , Tadashi Suzuki , Toshitaka Tanabe , Naoki Takahashi
发明人： Masahide Miura , Atsushi Tanaka , Takahiro Suzuki , Tadashi Suzuki , Toshitaka Tanabe , Naoki Takahashi
IPC分类号： B01J23/00 , B01J23/08 , B01J23/10 , B01J23/40 , B01J23/42 , B01J23/44 , B01J23/56 , B01J23/70 , B01J23/74 , B01J23/89 , B01J35/00 , B01J23/745 , B01J23/83 , C01G25/00 , C01G49/00 , B01J37/02 , B01J37/03
CPC分类号： B01J23/894 , B01J21/066 , B01J23/10 , B01J23/745 , B01J23/83 , B01J35/0006 , B01J35/002 , B01J37/0248 , B01J37/03 , C01G25/00 , C01G49/0018 , C01G49/0054 , C01P2002/72 , C01P2004/03 , C01P2004/32 , C01P2004/45 , C01P2004/61 , C01P2006/12
摘要： A composite oxide with a high oxygen storage capacity is provided without using cerium. The composite oxide is an iron oxide-zirconia composite oxide containing iron, zirconium, and a rare-earth element. The total content of Fe2O3, ZrO2, and an oxide of the rare-earth element is not less than 90 mass %, the content of an iron oxide in terms of Fe2O3 is 10 to 90 mass %, and the absolute value of the covariance COV(Fe, Zr+X) of the composite oxide, which has been baked in the atmosphere at a temperature of greater than or equal to 900° C. for 5 hours or more, is not greater than 20.
摘要翻译：提供具有高储氧能力的复合氧化物，而不使用铈。复合氧化物是含有铁，锆和稀土元素的氧化铁 - 氧化锆复合氧化物。 Fe2O3，ZrO2和稀土类元素的氧化物的总含量为90质量％以上，Fe 2 O 3的氧化铁含量为10〜90质量％，协方差COV的绝对值在大气中在大气压900℃以上焙烧5小时以上的复合氧化物（Fe，Zr + X）不大于20。

7. 发明申请

US20130332706A1 ELECTRONIC DEVICE, ELECTRONIC DEVICE COOPERATING SYSTEM, AND ELECTRONIC DEVICE CONTROLLING METHOD 审中-公开
标题翻译：电子设备，电子设备合作系统和电子设备控制方法
公开(公告)号：US20130332706A1
公开(公告)日：2013-12-12
申请号：US14001026
申请日：2012-05-14
申请人： Atsushi Tanaka
发明人： Atsushi Tanaka
IPC分类号： G06F9/00
CPC分类号： G06F9/00 , G06F13/385
摘要： There are included a communication part performing communication with other device; a command managing part transmitting a command of an own device to other device and receiving a command of other device to acquire the command of other device by the communication part, and managing the command of the own device and the command of other device; and a command processing part executing processing of a function corresponding to the command of the own device by the own device when a command selected from the commands managed by the command managing part is the command of the own device, and executing processing of a function corresponding to the command of other device by the other device when the command selected is the command of the other device.
摘要翻译：包括与其他设备进行通信的通信部件; 命令管理部，将自身设备的命令发送到其他设备，并接收其他设备的命令以通过通信部分获取其他设备的命令，并管理自身设备的命令和其他设备的命令; 以及命令处理部，当从由命令管理部管理的命令中选择的命令为自身装置的命令时，通过自身装置执行与本装置的命令对应的功能的处理，并执行对应的功能的处理当所选择的命令是另一设备的命令时，由另一设备指定其他设备。

8. 发明申请

US20120280826A1 MANAGEMENT APPARATUS FOR MANAGING A CONTENT DISPLAY CHANGE TIME ON A DISPLAY APPARATUS AND CONTENT INFORMATION TO BE TRANSMITTED TO A TERMINAL 有权
标题翻译：用于管理显示设备上的内容显示更改时间的管理设备和要传输到终端的内容信息
公开(公告)号：US20120280826A1
公开(公告)日：2012-11-08
申请号：US13552092
申请日：2012-07-18
申请人： Atsushi Tanaka
发明人： Atsushi Tanaka
IPC分类号： G08B21/00
CPC分类号： H04N7/17318 , H04N21/4126 , H04N21/4143 , H04N21/4182 , H04N21/4722 , H04N21/6582
摘要： A management apparatus for managing a content display change time on a display apparatus and content information to be transmitted to a terminal determines the content information to be transmitted to the terminal on the basis of a reception time of a content information request command transmitted from the terminal and the content display change time on the display apparatus.
摘要翻译：用于管理显示装置上的内容显示改变时间的管理装置和要发送到终端的内容信息根据从终端发送的内容信息请求命令的接收时间来确定要发送到终端的内容信息和显示装置上的内容显示改变时间。

9. 发明授权

US08299461B2 Thin film transistor, method of producing the same, electrooptic apparatus, and sensor 有权
标题翻译：薄膜晶体管，其制造方法，电光设备和传感器
公开(公告)号：US08299461B2
公开(公告)日：2012-10-30
申请号：US12797632
申请日：2010-06-10
申请人： Atsushi Tanaka , Takeshi Hama , Masayuki Suzuki
发明人： Atsushi Tanaka , Takeshi Hama , Masayuki Suzuki
IPC分类号： H01L29/12
CPC分类号： H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor includes: a substrate; and, on the substrate, an oxide semiconductor film which serves as an active layer and contains In, Ga, and Zn, a gate electrode, a gate insulating film, a source electrode, and a drain electrode, wherein, when a molar ratio of In, Ga, and Zn in the oxide semiconductor film is expressed as In:Ga:Zn=(2.0−x):x:y, wherein 0.0
摘要翻译：薄膜晶体管包括：基板; 并且在基板上具有用作有源层并且包含In，Ga和Zn的氧化物半导体膜，栅电极，栅绝缘膜，源电极和漏电极，其中，当摩尔比 In，Ga和Zn表示为In：Ga：Zn =（2.0-x）：x：y，其中0.0

10. 发明授权

US07983605B2 Developing member with urethane resin and silicone surface layer 有权
标题翻译：具有聚氨酯树脂和硅树脂表面层的显影剂
公开(公告)号：US07983605B2
公开(公告)日：2011-07-19
申请号：US11845489
申请日：2007-08-27
申请人： Minoru Nakamura , Ryota Kashiwabara , Atsushi Tanaka
发明人： Minoru Nakamura , Ryota Kashiwabara , Atsushi Tanaka
IPC分类号： G03G15/08
CPC分类号： G03G15/0818 , G03G2215/0634 , G03G2215/0861
摘要： A developing member is disclosed which can lessen the occurring of banding. The developing member has a shaft member, an elastic layer provided on the shaft member, and a resin layer provided on the surface, wherein the resin layer contains a urethane resin and a non-reactive silicone compound, and the non-reactive silicone compound has a polyether moiety whose total number of carbon atoms ranges from 3 to 9.
摘要翻译：公开了一种可以减少条纹发生的显影部件。显影部件具有轴构件，设置在轴构件上的弹性层和设置在表面上的树脂层，其中树脂层包含聚氨酯树脂和非反应性硅氧烷化合物，并且非反应性硅氧烷化合物具有总碳原子数为3〜9的聚醚部分。

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