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    • 1. 发明授权
    • Process for producing Bi- and Pb-containing oxide superconducting wiring
films
    • 生产含Bi和Pb的氧化物超导布线膜的工艺
    • US5312803A
    • 1994-05-17
    • US861823
    • 1992-06-16
    • Atsushi TanakaKazunori YamanakaNobuo KameharaKoichi Niwa
    • Atsushi TanakaKazunori YamanakaNobuo KameharaKoichi Niwa
    • H01L39/24B05D5/12
    • H01L39/2464Y10S505/704Y10S505/73Y10S505/731Y10S505/732Y10S505/741Y10S505/742
    • In an oxide superconducting film wiring, when the line width is reduced, the evaporation of a component during firing becomes so vigorous that it becomes impossible to form a desired single crystal phase, which causes a significant lowering in the properties of the oxide superconducting wiring. This problem can be solved by preventing the evaporation of the evaporable component during the firing. Examples of this include a process wherein plate is placed above the superconductor forming material film wiring pattern on the substrate so as to face each other, the plate comprising a material having no chemical influence on the superconducting wiring, and a pattern of a material containing an evaporable component is arbitrarily formed, a process wherein a pattern having a smaller line width is sandwiched between patterns having a larger line width, and a process wherein the firing atmosphere or the concentration of the evaporable component in the pattern is varied depending upon the line width.
    • PCT No.PCT / JP91 / 01422 Sec。 371日期:1992年6月16日 102(e)日期1992年6月16日PCT 1991年10月17日PCT公布。 第WO92 / 07381号公报 日期:1992年04月30日。在氧化物超导膜布线中,当线宽减小时,焙烧期间的成分的蒸发变得如此剧烈,不可能形成期望的单晶相,这导致了 氧化物超导布线的性能。 这个问题可以通过防止在焙烧期间的蒸发组分的蒸发来解决。 其实例包括其中板被放置在基板上的超导体形成材料膜布线图案之上以彼此面对的方法,该板包括对超导布线不具有化学影响的材料,以及含有 可以任意地形成蒸发部件,其中具有较小线宽的图形被夹在具有较大线宽的图案之间的处理,以及其中烧制气氛或图案中的可蒸发部件的浓度根据线宽变化的处理 。
    • 8. 发明授权
    • Multilayer deposition method for forming Pb-doped Bi-Sr-Ca-Cu-O
Superconducting films
    • 用于形成Pb掺杂的Bi-Sr-Ca-Cu-O超导膜的多层沉积方法
    • US5141917A
    • 1992-08-25
    • US565209
    • 1990-08-09
    • Atsushi TanakaNobuo KameharaKoichi Niwa
    • Atsushi TanakaNobuo KameharaKoichi Niwa
    • B32B18/00C04B35/45H01L39/24
    • C04B35/45H01L39/2422Y10S505/731Y10S505/732Y10S505/742
    • A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10 .sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.
    • 通过以下步骤形成具有高含量,几乎单相的高Tc相的钙钛矿型超导体膜:沉积至少一种第一材料的第一膜(例如,Bi-Sr-Ca- Cu-O系或Tl-Ba-Ca-Cu-O系),在基板上构成钙钛矿型超导体; 沉积至少一个第二材料的第二材料,该第二材料包含氧化物或元素(Bi 2 O 3,Tl 2 O 3,PbO x等,特别是PbO x),其在800℃下蒸气压大于10 -4 Pa至少作为主要成分 基材; 从而形成第一和第二膜的堆叠; 并对第一和第二膜的堆叠进行热处理,以在基板上形成钙钛矿型超导膜。 此外,确定沉积膜或叠层的优选组成。
    • 9. 发明授权
    • Process for preparing a perovskite Bi-containing superconductor film
    • 制备钙钛矿Bi超导膜的方法
    • US5585332A
    • 1996-12-17
    • US378087
    • 1995-01-25
    • Atsushi TanakaNobuo KameharaKoichi Niwa
    • Atsushi TanakaNobuo KameharaKoichi Niwa
    • B32B18/00C04B35/45H01L39/24B05D5/12
    • C04B35/45H01L39/2422Y10S505/731Y10S505/732Y10S505/742
    • A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10.sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.
    • 通过以下步骤形成具有高含量,几乎单相的高Tc相的钙钛矿型超导体膜:沉积至少一种第一材料的第一膜(例如,Bi-Sr-Ca- Cu-O系或Tl-Ba-Ca-Cu-O系),在基板上构成钙钛矿型超导体; 在800℃下至少沉积至少具有蒸气压大于10-4Pa的氧化物或元素(Bi 2 O 3,Tl 2 O 3,PbO x等,特别是PbO x)的第二材料的至少一个第二膜至少作为主要成分 基材; 从而形成第一和第二膜的堆叠; 并对第一和第二膜的堆叠进行热处理,以在基板上形成钙钛矿型超导膜。 此外,确定沉积膜或叠层的优选组成。