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1. 发明授权

US08283253B2 Pattern forming method, semiconductor device manufacturing method and semiconductor device manufacturing apparatus 有权
标题翻译：图案形成方法，半导体器件制造方法和半导体器件制造装置
公开(公告)号：US08283253B2
公开(公告)日：2012-10-09
申请号：US12370868
申请日：2009-02-13
申请人： Hidetami Yaegashi , Satoru Shimura , Takashi Hayakawa
发明人： Hidetami Yaegashi , Satoru Shimura , Takashi Hayakawa
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L21/0273 , H01L21/0338 , H01L27/105 , H01L27/1052
摘要： A pattern forming method for forming a pattern serving as a mask, includes a process for forming a first pattern 105, a process for trimming a width of the first pattern 105, a process for forming a boundary layer 106 on a surface of the first pattern 105, a process for forming a second mask material layer 107 on a surface of the boundary layer 106, a process for removing a part of the second mask material layer 107 to expose top portions of the boundary layer 106, and a process for exposing the first pattern 105 and forming a second pattern having the second mask material layer 107 at a top portion thereof by etching the boundary layer 106.
摘要翻译：用于形成用作掩模的图案的图案形成方法包括形成第一图案105的工艺，用于修整第一图案105的宽度的处理，在第一图案的表面上形成边界层106的工艺 105，在边界层106的表面上形成第二掩模材料层107的工艺，用于去除第二掩模材料层107的一部分以暴露边界层106的顶部的工艺，以及用于暴露边界层106的工艺第一图案105，并且通过蚀刻边界层106在其顶部形成具有第二掩模材料层107的第二图案。

2. 发明申请

US20090220892A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RESIST COATING AND DEVELOPING SYSTEM 有权
标题翻译：制造半导体器件的方法和电阻涂层和开发系统
公开(公告)号：US20090220892A1
公开(公告)日：2009-09-03
申请号：US12395937
申请日：2009-03-02
申请人： Fumiko IWAO , Satoru SHIMURA , Tetsu KAWASAKI
发明人： Fumiko IWAO , Satoru SHIMURA , Tetsu KAWASAKI
IPC分类号： G03F7/20 , G03B27/52
CPC分类号： G03B27/52 , G03F7/30 , G03F7/40
摘要： A method of manufacturing a semiconductor device includes: forming a resist layer on an underlayer, forming an exposed pattern in the resist layer, wherein the exposed pattern comprises a soluble layer and an insoluble layer, forming a resist pattern by removing the soluble layer from the resist layer in which the exposed pattern is formed, removing an intermediate exposed area from the resist pattern, forming a new soluble layer in a surface of the resist pattern from which the intermediate exposed area is removed by applying a reaction material to the resist pattern from which the intermediate exposed area is removed, wherein the reaction material generates a solubilization material that solubilizes the resist pattern, and removing the new soluble layer from the resist pattern.
摘要翻译：一种制造半导体器件的方法包括：在底层上形成抗蚀剂层，在抗蚀剂层中形成曝光图案，其中暴露图案包括可溶层和不溶层，通过从可溶层除去可溶层形成抗蚀剂图案形成曝光图案的抗蚀剂层，从抗蚀剂图案去除中间曝光区域，在抗蚀剂图案的表面形成新的可溶层，通过将抗反射材料从抗蚀剂图案施加到抗蚀剂图案上从中除去中间暴露区域去除中间暴露区域，其中反应材料产生溶解抗蚀剂图案的增溶材料，以及从抗蚀剂图案中除去新的可溶层。

3. 发明申请

US20090209109A1 PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 有权
标题翻译：图案形成方法，半导体器件制造方法和半导体器件制造装置
公开(公告)号：US20090209109A1
公开(公告)日：2009-08-20
申请号：US12370768
申请日：2009-02-13
申请人： Hidetami Yaegashi , Satoru Shimura
发明人： Hidetami Yaegashi , Satoru Shimura
IPC分类号： G03F7/20 , H01L21/302
CPC分类号： H01L21/0337 , H01L27/105 , H01L27/1052
摘要： Provided is a pattern forming method for forming a pattern serving as a mask, which includes: a process for forming a first pattern 105 made of a photoresist; a process for forming a boundary layer 106 at sidewall portions and top portions of the first pattern 105; a process for forming a second mask material layer 107 to cover a surface of the boundary layer 106; a process for removing a part of the second mask material layer 107 to expose top portions of the boundary layer 106; a process for forming a second pattern made of the second mask material layer 107 by etching and removing the boundary layer 106; and a trimming process for reducing a width of the first pattern 105 and a width of the second pattern to predetermined widths.
摘要翻译：提供一种用于形成用作掩模的图案的图案形成方法，其包括：用于形成由光致抗蚀剂制成的第一图案105的工艺; 用于在第一图案105的侧壁部分和顶部形成边界层106的工艺; 形成覆盖边界层106的表面的第二掩模材料层107的工序; 用于去除第二掩模材料层107的一部分以暴露边界层106的顶部的工艺; 用于通过蚀刻和去除边界层106形成由第二掩模材料层107制成的第二图案的工艺; 以及用于将第一图案105的宽度和第二图案的宽度减小到预定宽度的修剪处理。

4. 发明申请

US20070184379A1 Peeling-off method and reworking method of resist film 审中-公开
标题翻译：抗剥离膜剥离方法及修复方法
公开(公告)号：US20070184379A1
公开(公告)日：2007-08-09
申请号：US10591345
申请日：2005-03-01
申请人： Shigeo Ashigaki , Yoshihiro Kato , Yoshihiro Hirota , Yusuke Muraki , Tetsu Kawasaki , Satoru Shimura
发明人： Shigeo Ashigaki , Yoshihiro Kato , Yoshihiro Hirota , Yusuke Muraki , Tetsu Kawasaki , Satoru Shimura
IPC分类号： G03C1/00
CPC分类号： G03F7/42 , H01L21/31133 , H01L21/31144 , H01L21/67051
摘要： A processing method of a substrate includes: a step of forming an Si—C based film and a resist film in turn on an objective film to be etched that has been formed on a substrate; a first etching step of etching the Si—C based film making use of the resist film as a mask; and a second etching step of etching the objective film to be etched making use of the resist film and the Si—C based film as a mask. The processing method further includes a peeling-off step of peeling-off the resist film at a desired timing. The peeling-off step includes a preparing step of preparing an organic solvent as a release agent, and an applying step of applying the organic solvent to the resist film.
摘要翻译：基板的处理方法包括：依次形成Si-C基膜和抗蚀剂膜的步骤，所述Si-C基膜和抗蚀剂膜依次形成在基板上形成的待蚀刻目标膜上; 蚀刻使用抗蚀剂膜作为掩模的Si-C基膜的第一蚀刻步骤; 以及使用抗蚀剂膜和Si-C基膜作为掩模蚀刻待蚀刻的目标膜的第二蚀刻步骤。该处理方法还包括在期望的时刻剥离抗蚀剂膜的剥离步骤。剥离步骤包括制备作为脱模剂的有机溶剂的制备步骤和将有机溶剂施加到抗蚀剂膜的施加步骤。

5. 发明申请

US20070044823A1 Substrate cleaning device and substrate cleaning method 有权
标题翻译：基板清洗装置和基板清洗方法
公开(公告)号：US20070044823A1
公开(公告)日：2007-03-01
申请号：US11509737
申请日：2006-08-25
申请人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
发明人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
IPC分类号： B08B3/02
CPC分类号： H01L21/67051
摘要： A substrate cleaning device and a substrate cleaning method reduces liquid drops remaining on a substrate to prevent the irregular heating of the substrate by a heating process due to liquid drops or water marks remaining on the substrate. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto the surface of a substrate such that a region onto which the cleaning liquid is poured moves from a central part toward the circumference of the substrate. A gas is jetted radially outward at a region on the surface of the substrate behind a region onto which the cleaning liquid is poured with respect to the rotating direction of the substrate. The gas forces a liquid film of the cleaning liquid flowing on the surface of the substrate to flow in a circumferential direction and a radially outward direction. The cleaning liquid poured out onto the surface of the substrate through the cleaning liquid pouring nozzle is restrained from flowing by a liquid damming member held at a height equal to or lower than that of the nozzle exit of the cleaning liquid pouring nozzle to collect a mass of the cleaning liquid. A high centrifugal force acts on the mass of the cleaning liquid to force the mass of the cleaning liquid to flow outward even if the substrate is rotated at a low rotating speed.
摘要翻译：基板清洁装置和基板清洗方法减少了残留在基板上的液滴，以防止由于基板上残留液滴或水痕而导致的加热过程对基板的不规则加热。将清洗液通过清洗液注入喷嘴注入到基板的表面上，使清洗液注入的区域从基板的中心部朝向圆周方向移动。在衬底表面上的相对于衬底的旋转方向倾倒有清洁液体的区域之后的区域处，径向向外喷射气体。气体迫使在基板表面流动的清洗液体的液膜在圆周方向和径向向外的方向上流动。清洗液通过清洗液倒出嘴倾倒在基材表面上被限制在保持在与清洗液注入嘴的喷嘴出口相同或更小的高度的液体阻塞构件的流动中，从而收集质量的清洗液。即使基板以低转速旋转，高离心力作用在清洁液体上，以迫使清洁液体的质量向外流出。

6. 发明申请

US20060068337A1 Substrate processing method 审中-公开
标题翻译：基板加工方法
公开(公告)号：US20060068337A1
公开(公告)日：2006-03-30
申请号：US11218637
申请日：2005-09-06
申请人： Keiji Tanouchi , Satoru Shimura
发明人： Keiji Tanouchi , Satoru Shimura
IPC分类号： G03C5/26
CPC分类号： G03F7/3021 , G03F7/32 , G03F7/40
摘要： In the present invention, a substrate processing method, in which a developing treatment is performed after exposure processing of a pattern, includes a shaping step of shaping the shape of a resist pattern such that a side wall portion of the resist pattern after the developing treatment swells out to a groove side and a swell-out portion swelling out to the groove side and concavely curving with respect to the groove side is formed at a corner portion of a bottom of the resist pattern. According to the present invention, the side wall portion is made to swell out to improve the striation of the resist pattern, resulting in a preferable shape of a pattern after etching treatment.
摘要翻译：在本发明中，在图案的曝光处理之后进行显影处理的基板处理方法包括使抗蚀剂图案的形状成形，使得在显影处理后的抗蚀剂图案的侧壁部分膨胀到凹槽侧，并且在抗蚀剂图案的底部的角部处形成有膨胀到凹槽侧的膨胀部分并且相对于凹槽侧凹陷弯曲。根据本发明，使侧壁部分膨胀以改善抗蚀剂图案的条纹，导致蚀刻处理后的图案的优选形状。

7. 发明申请

US20120006362A1 SUBSTRATE CLEANING DEVICE AND SUBSTRATE CLEANING METHOD 审中-公开
标题翻译：基板清洁装置和基板清洁方法
公开(公告)号：US20120006362A1
公开(公告)日：2012-01-12
申请号：US13240830
申请日：2011-09-22
申请人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
发明人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
IPC分类号： B08B7/04 , B08B5/02 , B08B3/04
CPC分类号： H01L21/67051
摘要： A substrate cleaning device and a substrate cleaning method reduces liquid drops remaining on a substrate to prevent the irregular heating of the substrate by a heating process due to liquid drops or water marks remaining on the substrate. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto the surface of a substrate such that a region onto which the cleaning liquid is poured moves from a central part toward the circumference of the substrate. A gas is jetted radially outward at a region on the surface of the substrate behind a region onto which the cleaning liquid is poured with respect to the rotating direction of the substrate. The gas forces a liquid film of the cleaning liquid flowing on the surface of the substrate to flow in a circumferential direction and a radially outward direction.
摘要翻译：基板清洁装置和基板清洗方法减少了残留在基板上的液滴，以防止由于基板上残留液滴或水痕而导致的加热过程对基板的不规则加热。将清洗液通过清洗液注入喷嘴注入到基板的表面上，使清洗液注入的区域从基板的中心部朝向圆周方向移动。在衬底表面上的相对于衬底的旋转方向倾倒有清洁液体的区域之后的区域处，径向向外喷射气体。气体迫使在基板表面流动的清洗液体的液膜在圆周方向和径向向外的方向上流动。

8. 发明申请

US20120305183A1 SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体器件制造设备
公开(公告)号：US20120305183A1
公开(公告)日：2012-12-06
申请号：US13590298
申请日：2012-08-21
申请人： Hidetami Yaegashi , Satoru Shimura , Takashi Hayakawa
发明人： Hidetami Yaegashi , Satoru Shimura , Takashi Hayakawa
IPC分类号： H01L21/308
CPC分类号： H01L21/0337 , H01L21/0273 , H01L21/0338 , H01L27/105 , H01L27/1052
摘要： A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a trimming unit for reducing a width of the first pattern to a predetermined width; a boundary layer forming unit for forming a boundary layer, on a surface of the first pattern; a second mask material layer forming unit for forming a second mask material layer on a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; and a boundary layer etching unit for exposing the first pattern and forming a second pattern having the second mask material layer at a top portion thereof by etching the boundary layer.
摘要翻译：半导体器件制造装置包括：第一图案形成单元，用于通过图案化第一掩模材料层来形成第一图案; 修整单元，用于将第一图案的宽度减小到预定宽度; 边界层形成单元，用于在所述第一图案的表面上形成边界层; 第二掩模材料层形成单元，用于在所述边界层的表面上形成第二掩模材料层; 第二掩模材料去除单元，用于去除所述第二掩模材料层的一部分以暴露所述边界层的顶部; 以及边界层蚀刻单元，用于通过蚀刻边界层来暴露第一图案并在其顶部形成具有第二掩模材料层的第二图案。

9. 发明授权

US08273661B2 Pattern forming method, semiconductor device manufacturing method and semiconductor device manufacturing apparatus 有权
标题翻译：图案形成方法，半导体器件制造方法和半导体器件制造装置
公开(公告)号：US08273661B2
公开(公告)日：2012-09-25
申请号：US12370768
申请日：2009-02-13
申请人： Hidetami Yaegashi , Satoru Shimura
发明人： Hidetami Yaegashi , Satoru Shimura
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L27/105 , H01L27/1052
摘要： Provided is a pattern forming method for forming a pattern serving as a mask, which includes: a process for forming a first pattern 105 made of a photoresist; a process for forming a boundary layer 106 at sidewall portions and top portions of the first pattern 105; a process for forming a second mask material layer 107 to cover a surface of the boundary layer 106; a process for removing a part of the second mask material layer 107 to expose top portions of the boundary layer 106; a process for forming a second pattern made of the second mask material layer 107 by etching and removing the boundary layer 106; and a trimming process for reducing a width of the first pattern 105 and a width of the second pattern to predetermined widths.
摘要翻译：提供一种用于形成用作掩模的图案的图案形成方法，其包括：用于形成由光致抗蚀剂制成的第一图案105的工艺; 用于在第一图案105的侧壁部分和顶部形成边界层106的工艺; 形成覆盖边界层106的表面的第二掩模材料层107的工序; 用于去除第二掩模材料层107的一部分以暴露边界层106的顶部的工艺; 用于通过蚀刻和去除边界层106形成由第二掩模材料层107制成的第二图案的工艺; 以及用于将第一图案105的宽度和第二图案的宽度减小到预定宽度的修剪处理。

10. 发明申请

US20120034779A1 APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件的装置
公开(公告)号：US20120034779A1
公开(公告)日：2012-02-09
申请号：US13276894
申请日：2011-10-19
申请人： Satoru SHIMURA , Kazuhiro Kubota , Ryuichi Asako , Seiichi Takayama
发明人： Satoru SHIMURA , Kazuhiro Kubota , Ryuichi Asako , Seiichi Takayama
IPC分类号： H01L21/308
CPC分类号： H01L21/76831 , H01L21/02063 , H01L21/31058 , H01L21/31116 , H01L21/31138 , H01L21/67167 , H01L21/67178 , H01L21/67207 , H01L21/76808 , H01L21/76811 , H01L21/76814 , H01L21/76826
摘要： In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.
摘要翻译：在半导体器件制造方法中，在设置在目标物体上的蚀刻靶膜（74）上形成具有规定的开口图案的蚀刻掩模（75b）。然后，通过第一处理室内的蚀刻掩模（75b）的开口图案对蚀刻目标膜（74）进行蚀刻处理，从而在蚀刻目标膜中形成凹槽或孔（78a）。然后，通过蚀刻处理处理的目标物体在真空气氛中从第一处理室转移到第二处理室。然后，在第二处理室内，作为蚀刻对象膜（74）的露出部的槽（78a）的侧面进行甲硅烷化处理。

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