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1. 发明授权

US09576693B2 Metal material for electronic component and method for manufacturing the same 有权
标题翻译：电子元件用金属材料及其制造方法
公开(公告)号：US09576693B2
公开(公告)日：2017-02-21
申请号：US14346025
申请日：2012-09-10
申请人： Yoshitaka Shibuya , Kazuhiko Fukamachi , Atsushi Kodama
发明人： Yoshitaka Shibuya , Kazuhiko Fukamachi , Atsushi Kodama
IPC分类号： B32B15/00 , H01B1/02 , B32B15/01 , C25D5/10 , C22C5/06 , C22C5/08 , C22C5/10 , C22C9/00 , C22C9/02 , C22C9/04 , C22C13/00 , C22C19/03 , C22C19/07 , C22C22/00 , C22C27/06 , C22C38/00 , C22C13/02 , H05K3/24 , C25D5/50 , C25D5/12 , C23C18/16 , H05K1/11 , H01R13/03 , C25D3/12 , C25D3/20 , C25D3/30 , C25D3/38 , C25D3/46 , C25D3/50 , C25D3/56 , C25D3/62 , C25D3/64
CPC分类号： H01B1/02 , B32B15/01 , B32B15/018 , C22C5/06 , C22C5/08 , C22C5/10 , C22C9/00 , C22C9/02 , C22C9/04 , C22C13/00 , C22C13/02 , C22C19/03 , C22C19/07 , C22C22/00 , C22C27/06 , C22C38/00 , C23C18/1651 , C23C18/1692 , C25D3/12 , C25D3/20 , C25D3/30 , C25D3/38 , C25D3/46 , C25D3/50 , C25D3/567 , C25D3/62 , C25D3/64 , C25D5/10 , C25D5/12 , C25D5/505 , H01R13/03 , H05K1/117 , H05K1/118 , H05K3/244 , H05K2201/0341 , Y10T428/12681 , Y10T428/12708 , Y10T428/12715 , Y10T428/12722
摘要： There are provided a metal material for electronic component which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The metal material 10 for electronic components has a base material 11, an A layer 14 constituting a surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the surface layer (A layer) 14 has a thickness of 0.002 to 0.2 μm, and the middle layer (B layer) 13 has a thickness of 0.001 to 0.3 μm.
摘要翻译：提供了具有低插入性/提取性，低晶须成形性和高耐久性的电子部件用金属材料以及金属材料的制造方法。用于电子部件的金属材料10具有基材11，构成基材11的表层的A层14，其由Sn，In或其合金形成，B层13构成中间层，材料11和A层14，由Ag，Au，Pt，Pd，Ru，Rh，Os，Ir或其合金形成，其中表面层（A层）14的厚度为0.002〜0.2μm，中间层（B层）13的厚度为0.001〜0.3μm。

2. 发明申请

US20140329107A1 METAL MATERIAL FOR ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：用于电子元件的金属材料及其制造方法
公开(公告)号：US20140329107A1
公开(公告)日：2014-11-06
申请号：US14346025
申请日：2012-09-10
申请人： Yoshitaka Shibuya , Kazuhiko Fukamachi , Atsushi Kodama
发明人： Yoshitaka Shibuya , Kazuhiko Fukamachi , Atsushi Kodama
IPC分类号： H01B1/02 , B32B15/01
CPC分类号： H01B1/02 , B32B15/01 , B32B15/018 , C22C5/06 , C22C5/08 , C22C5/10 , C22C9/00 , C22C9/02 , C22C9/04 , C22C13/00 , C22C13/02 , C22C19/03 , C22C19/07 , C22C22/00 , C22C27/06 , C22C38/00 , C23C18/1651 , C23C18/1692 , C25D3/12 , C25D3/20 , C25D3/30 , C25D3/38 , C25D3/46 , C25D3/50 , C25D3/567 , C25D3/62 , C25D3/64 , C25D5/10 , C25D5/12 , C25D5/505 , H01R13/03 , H05K1/117 , H05K1/118 , H05K3/244 , H05K2201/0341 , Y10T428/12681 , Y10T428/12708 , Y10T428/12715 , Y10T428/12722
摘要： There are provided a metal material for electronic component which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The metal material 10 for electronic components has a base material 11, an A layer 14 constituting a surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the surface layer (A layer) 14 has a thickness of 0.002 to 0.2 μm, and the middle layer (B layer) 13 has a thickness of 0.001 to 0.3 μm.
摘要翻译：提供了具有低插入性/提取性，低晶须成形性和高耐久性的电子部件用金属材料以及金属材料的制造方法。用于电子部件的金属材料10具有基材11，构成基材11的表层的A层14，其由Sn，In或其合金形成，B层13构成中间层，材料11和A层14，由Ag，Au，Pt，Pd，Ru，Rh，Os，Ir或其合金形成，其中表面层（A层）14的厚度为0.002〜0.2μm，中间层（B层）13的厚度为0.001〜0.3μm。

3. 发明授权

US06403234B1 Plated material for connectors 有权
标题翻译：电镀材料用于连接器
公开(公告)号：US06403234B1
公开(公告)日：2002-06-11
申请号：US09593416
申请日：2000-06-14
申请人： Atsushi Kodama , Kazuhiko Fukamachi
发明人： Atsushi Kodama , Kazuhiko Fukamachi
IPC分类号： B32B1520
CPC分类号： C25D3/32 , B32B15/01 , C25D3/562 , C25D3/60 , C25D5/10 , Y10T428/12458 , Y10T428/12722 , Y10T428/1291
摘要： A plated material for connectors, having superior insertion and withdrawal properties, comprises an intermediate layer consisting of Ni alloy plating having a Vickers hardness of 450 to 750 Hv and a thickness of 0.3 to 2 &mgr;m provided on a base metal consisting of Cu or Cu alloy, a reflowed Sn or Sn alloy plated surface layer provided thereon, and an alloy layer consisting primarily of Sn—Ni and having a thickness of 0.05 to 2 &mgr;m formed by diffusion between the intermediate layer and the surface layer, in which average grain size of said Sn—Ni compound is 0.05 to 1 &mgr;m.
摘要翻译：用于连接器的电镀材料具有优异的插拔性能，包括由Cu或Cu合金构成的基体金属上提供的维氏硬度为450-750Hv的Ni合金镀层和0.3-2μm的厚度的中间层，设置在其上的回流的Sn或Sn合金表面层，以及主要由Sn-Ni构成的厚度为0.05〜2μm的合金层，其中间层和表面层之间的平均粒径所述Sn-Ni化合物为0.05〜1um。

4. 发明申请

US20090035174A1 Copper Alloy for Electronic Materials 有权
标题翻译：铜合金电子材料
公开(公告)号：US20090035174A1
公开(公告)日：2009-02-05
申请号：US11886829
申请日：2006-03-23
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： C22C9/06 , C22F1/00 , C22F1/08 , H01R13/03
摘要： The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5≦Ni/Co≦about 2.
摘要翻译：本发明提供含有Co的Cu-Ni-Si合金，并且具有优异的强度和导电性。根据本发明的用于电子材料的铜合金包含约0.5-约2.5重量％的Ni，约0.5-约2.5重量％的Co，约0.30-约1.2重量％的Si，余量为Cu 和不可避免的杂质，其中Ni和Co的总重量与Si（[Ni + Co] / Si比）的重量比满足下式：约4 <= [Ni + Co] / Si <=约5，并且Ni与Co的比例（Ni / Co比）满足下式：约0.5≤Ni/Co≤2。

5. 发明申请

US20080121320A1 COPPER ALLOY AND PRODUCING METHOD THEREFOR 审中-公开
标题翻译：铜合金及其生产方法
公开(公告)号：US20080121320A1
公开(公告)日：2008-05-29
申请号：US12022084
申请日：2008-01-29
申请人： Yasutaka Sugawara , Kazuhiko Fukamachi
发明人： Yasutaka Sugawara , Kazuhiko Fukamachi
IPC分类号： C22F1/08 , C22C9/00
CPC分类号： C22C9/00 , C22F1/08
摘要： Superior bendability in a copper alloy and further strength improvement ensures characteristics which are sufficiently superior in view of essential qualities of strength of titanium-copper. 2.0 to 4.0 mass % of Ti, 0.01 to 0.50 mass % of one or more than one kind of element from among Fe, Co, Ni, Cr, V, Zr, B, and P as the third element group are contained, and not less than 50% of the total content of these elements is made to exist as second-phase particles.
摘要翻译：铜合金的优异的弯曲性和进一步的强度提高确保了从钛 - 铜的强度的本质上考虑的特性。含有2.0〜4.0质量％的Ti，0.01〜0.50质量％的作为第3成分的Fe，Co，Ni，Cr，V，Zr，B，P中的一种以上的1种以上的元素，少于这些元素总含量的50％作为第二相颗粒存在。

6. 发明申请

US20060204396A1 Titanium copper alloy having excellent punchability 审中-公开
标题翻译：具有优异冲压性能的钛铜合金
公开(公告)号：US20060204396A1
公开(公告)日：2006-09-14
申请号：US11371469
申请日：2006-03-09
申请人： Yasutaka Sugawara , Kazuhiko Fukamachi
发明人： Yasutaka Sugawara , Kazuhiko Fukamachi
IPC分类号： C22C9/00
CPC分类号： C22C9/00 , C22C1/06
摘要： A copper material alloy comprising 2.0 to 4.0 weight % of Ti and 0.05 to 0.50 weight % of Fe wherein; inevitable impurities have an amount of 0.01 weight % or less in total; and the ratio of X ray diffraction intensity of the alloy satisfies I(311)/I(111)≧0.5. The copper alloy of the present invention has improved punchability and excellent bendability.
摘要翻译：包含2.0〜4.0重量％的Ti和0.05〜0.50重量％的Fe的铜材合金，其中，不可避免的杂质总量为0.01重量％以下; 并且合金的X射线衍射强度的比例满足I（311）/ I（111）> = 0.5。本发明的铜合金具有改善的冲压性和优异的弯曲性。

7. 发明申请

US20080210353A1 High-strength copper alloys with excellent bending workability and terminal connectors using the same 审中-公开
标题翻译：具有优异的弯曲加工性的高强度铜合金和使用其的端子连接器
公开(公告)号：US20080210353A1
公开(公告)日：2008-09-04
申请号：US12082531
申请日：2008-04-11
申请人： Kazuhiko Fukamachi , Masato Shigyo
发明人： Kazuhiko Fukamachi , Masato Shigyo
IPC分类号： C22F1/08 , C22C9/02
CPC分类号： C22C9/02 , C22F1/08
摘要： The invention aims at providing high-strength copper alloy, especially phosphor bronze, with excellent bending workability. The excellently bendable high-strength copper alloy is obtained through grain size control whereby a finally cold rolled copper alloy with a tensile strength and 0.2% yield strength different by not more than 80 MPa is allowed to have characteristics such that its mean grain size (mGS) after annealing at 425° C. for 10,000 seconds is not more than 5 μm and the standard deviation of the mean grain size (σGS) is not more than ⅓×mGS. Improvements in characteristics presumably attributable to the synergistic effect of grain-boundary strengthening and dislocation strengthening are stably achieved by the adjustments of cold rolling and annealing conditions and by the study of the correlation between pertinent characteristic values after the final rolling. The method of processing the alloy comprises cold rolling to a reduction percentage of at least 45%, final annealing to the extent that the mean grain size (mGS) is not more than 3 μm and the standard deviation of the mean grain size (σGS) is not more than 2 μm, and final cold rolling to a reduction percentage of 10-45%.
摘要翻译：本发明旨在提供优异的弯曲加工性的高强度铜合金，特别是磷青铜。通过晶粒尺寸控制获得优异的可弯曲的高强度铜合金，使得具有拉伸强度和0.2％屈服强度不同于80MPa的最终冷轧铜合金具有使其平均晶粒尺寸（mGS））在425℃退火10,000秒后不大于5um，平均晶粒尺寸（sigmaGS）的标准偏差不大于1/3×mGS。通过调整冷轧和退火条件以及通过研究最终轧制后的相关特征值之间的相关性，稳定地实现了通过晶界强化和位错强化的协同效应推测的特性的改善。处理合金的方法包括冷轧至至少45％的还原率，最终退火至平均晶粒尺寸（mGS）不大于3μm，平均晶粒尺寸（sigmaGS）的标准偏差不超过2毫米，最终冷轧减少百分比为10-45％。

8. 发明授权

US08070893B2 Cu—Ni—Si—Co—Cr copper alloy for electronic materials and method for manufacturing same 有权
标题翻译：用于电子材料的Cu-Ni-Si-Co-Cr铜合金及其制造方法
公开(公告)号：US08070893B2
公开(公告)日：2011-12-06
申请号：US11887660
申请日：2006-03-31
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： H01L23/49579 , C22C9/06 , C22F1/08 , H01L2924/0002 , H01L2924/00
摘要： The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5 -about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09 -about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm2, or Pc/P is equal to or less than about 0.3 wherein P is the number of inclusions dispersed in the alloy and having the size of 1 μm or more, and Pc is the number of inclusions, among those having the size of 1 μm or more, whose carbon concentration is 10% or more by weight.
摘要翻译：本发明提供了具有优异特性的电子材料的Cu-Ni-Si-Co-Cr铜合金，例如显着提高的强度和导电性。一方面，本发明是用于电子材料的Cu-Ni-Si-Co-Cr铜合金，其包含约0.5-约2.5重量％的Ni，约0.5-约2.5重量％的Co，约0.30-约 1.2重量％的Si，约0.09〜0.5重量％的Cr，余量为Cu和不可避免的杂质，其中Ni和Co的总重量与合金组成中的Si的重量比满足约4＆nlE; [Ni + Co] / Si＆nlE;约5，合金组成中Ni与Co的比例满足下式：约0.5＆nlE; Ni / Co＆nlE;约2，其中Pc等于或小于大于约15/1000μm2，或Pc / P等于或小于约0.3，其中P是分散在合金中并且具有1μm或更大的尺寸的夹杂物的数量，Pc是夹杂物的数量，其中其碳浓度为10重量％以上的尺寸为1μm以上。

9. 发明申请

US20090025840A1 Cu-Ni-Si-Co-Cr Copper Alloy for Electronic Materials and Method for Manufacturing Same 有权
标题翻译：用于电子材料的Cu-Ni-Si-Co-Cr铜合金及其制造方法
公开(公告)号：US20090025840A1
公开(公告)日：2009-01-29
申请号：US11887660
申请日：2006-03-31
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22F1/08 , C22C9/06 , C22C9/02 , C22C9/04
CPC分类号： H01L23/49579 , C22C9/06 , C22F1/08 , H01L2924/0002 , H01L2924/00
摘要： The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09-about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm2, or Pc/P is equal to or less than about 0.3 wherein P is the number of inclusions dispersed in the alloy and having the size of 1 μm or more, and Pc is the number of inclusions, among those having the size of 1 μm or more, whose carbon concentration is 10% or more by weight.
摘要翻译：本发明提供了具有优异特性的电子材料的Cu-Ni-Si-Co-Cr铜合金，例如显着提高的强度和导电性。一方面，本发明是用于电子材料的Cu-Ni-Si-Co-Cr铜合金，其包含约0.5-约2.5重量％的Ni，约0.5-约2.5重量％的Co，约0.30-约 1.2重量％的Si和约0.09〜约0.5重量％的Cr，余量为Cu和不可避免的杂质，其中Ni和Co的总重量与合金组合物中的Si的重量比满足式：约4 <= [Ni + Co] / Si <=约5，合金组成中Ni与Co的比例满足下式：约0.5 <= Ni / Co <= 2，其中Pc相等或小于约15/1000mum2，或Pc / P等于或小于约0.3，其中P是分散在合金中并且具有1um或更大的尺寸的夹杂物的数量，Pc是夹杂物的数量，其中碳浓度为10重量％以上的大小为1μm以上的那些。

10. 发明申请

US20090022993A1 Copper alloy 审中-公开
标题翻译：铜合金
公开(公告)号：US20090022993A1
公开(公告)日：2009-01-22
申请号：US12071666
申请日：2008-02-25
申请人： Yasutaka Sugawara , Kazuhiko Fukamachi
发明人： Yasutaka Sugawara , Kazuhiko Fukamachi
IPC分类号： B32B5/16
CPC分类号： C22C9/00 , Y10T428/2982
摘要： Copper alloys having excellent strength while suppressing irregularity of wavelengths, etc., of the fluctuations and having excellent bendability are obtained while suppressing growth of crystal grains. The copper-based alloy contains 2.0 to 4.0 mass % of Ti, and the total content of unavoidable impurity elements Pb, Sn, Zn, Mn, Fe, Co, Ni, S, Si, Al, P, As, Se, Te, Sb, Bi, Au, and Ag is not more than 0.1 mass %, and contents of each element thereof is not more than 0.01 mass %, and not less than 80% of quality of a second-phase particles having an area of not less than 0.01 μm2 observed by a cross section speculum contains not less than 3% of the total amount of the above described unavoidable impurity elements in composition.
摘要翻译：在抑制晶粒生长的同时，获得具有优异强度的铜合金，同时抑制波动的波动等，并且具有优异的弯曲性。铜基合金含有2.0〜4.0质量％的Ti，不可避免的杂质元素Pb，Sn，Zn，Mn，Fe，Co，Ni，S，Si，Al，P，As，Se，Te， Sb，Bi，Au，Ag为0.1质量％以下，各元素的含量为0.01质量％以下，面积为以下的第二相粒子的品质不低于80质量％通过截面窥器观察到的0.01μm2以上不包含上述不可避免的杂质元素总量的3％以上。

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