专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08317948B2 Copper alloy for electronic materials 有权
标题翻译：铜合金电子材料
公开(公告)号：US08317948B2
公开(公告)日：2012-11-27
申请号：US11886829
申请日：2006-03-23
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： C22C9/06 , C22F1/00 , C22F1/08 , H01R13/03
摘要： The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5≦Ni/Co≦about 2.
摘要翻译：本发明提供含有Co的Cu-Ni-Si合金，并且具有优异的强度和导电性。根据本发明的用于电子材料的铜合金包含约0.5-约2.5重量％的Ni，约0.5-约2.5重量％的Co，约0.30-约1.2重量％的Si，余量为Cu 和不可避免的杂质，其中Ni和Co的总重量与Si（[Ni + Co] / Si比率）的重量比满足下式：约4＆nlE; [Ni + Co] / Si＆nlE;约5， Ni与Co的比例（Ni / Co比）满足公式：约0.5＆nlE; Ni / Co＆nlE;约2。

2. 发明申请

US20080175746A1 Cu-Ni-Si system copper alloy for electronic materials 审中-公开
标题翻译： Cu-Ni-Si系统铜合金电子材料
公开(公告)号：US20080175746A1
公开(公告)日：2008-07-24
申请号：US11654864
申请日：2007-01-18
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22C9/06
CPC分类号： C22C9/06 , C22C1/02
摘要： The present invention provides Corson alloy having remarkably improved properties, in particular, by bringing out the effect of added Cr more efficiently. A copper alloy for electronic materials comprising 2.5-4.5% by mass of Ni; 0.50-1.2% by mass of Si; 0.0030-0.2% by mass of Cr; balance Cu and inevitable impurities, wherein the weight ratio of Ni to Si is in the range of 3 to 7 and the content of carbon is 50 ppm by mass or less is provided.
摘要翻译：本发明提供了具有显着提高的性能的Corson合金，特别是通过更有效地产生添加的Cr的作用。一种电子材料用铜合金，含有2.5〜4.5质量％的Ni; 0.50-1.2质量％的Si; 0.0030-0.2质量％的Cr; 平衡Cu和不可避免的杂质，其中Ni与Si的重量比在3至7的范围内，并且碳的含量为50质量ppm以下。

3. 发明申请

US20090035174A1 Copper Alloy for Electronic Materials 有权
标题翻译：铜合金电子材料
公开(公告)号：US20090035174A1
公开(公告)日：2009-02-05
申请号：US11886829
申请日：2006-03-23
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： C22C9/06 , C22F1/00 , C22F1/08 , H01R13/03
摘要： The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5≦Ni/Co≦about 2.
摘要翻译：本发明提供含有Co的Cu-Ni-Si合金，并且具有优异的强度和导电性。根据本发明的用于电子材料的铜合金包含约0.5-约2.5重量％的Ni，约0.5-约2.5重量％的Co，约0.30-约1.2重量％的Si，余量为Cu 和不可避免的杂质，其中Ni和Co的总重量与Si（[Ni + Co] / Si比）的重量比满足下式：约4 <= [Ni + Co] / Si <=约5，并且Ni与Co的比例（Ni / Co比）满足下式：约0.5≤Ni/Co≤2。

4. 发明授权

US08070893B2 Cu—Ni—Si—Co—Cr copper alloy for electronic materials and method for manufacturing same 有权
标题翻译：用于电子材料的Cu-Ni-Si-Co-Cr铜合金及其制造方法
公开(公告)号：US08070893B2
公开(公告)日：2011-12-06
申请号：US11887660
申请日：2006-03-31
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： H01L23/49579 , C22C9/06 , C22F1/08 , H01L2924/0002 , H01L2924/00
摘要： The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5 -about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09 -about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm2, or Pc/P is equal to or less than about 0.3 wherein P is the number of inclusions dispersed in the alloy and having the size of 1 μm or more, and Pc is the number of inclusions, among those having the size of 1 μm or more, whose carbon concentration is 10% or more by weight.
摘要翻译：本发明提供了具有优异特性的电子材料的Cu-Ni-Si-Co-Cr铜合金，例如显着提高的强度和导电性。一方面，本发明是用于电子材料的Cu-Ni-Si-Co-Cr铜合金，其包含约0.5-约2.5重量％的Ni，约0.5-约2.5重量％的Co，约0.30-约 1.2重量％的Si，约0.09〜0.5重量％的Cr，余量为Cu和不可避免的杂质，其中Ni和Co的总重量与合金组成中的Si的重量比满足约4＆nlE; [Ni + Co] / Si＆nlE;约5，合金组成中Ni与Co的比例满足下式：约0.5＆nlE; Ni / Co＆nlE;约2，其中Pc等于或小于大于约15/1000μm2，或Pc / P等于或小于约0.3，其中P是分散在合金中并且具有1μm或更大的尺寸的夹杂物的数量，Pc是夹杂物的数量，其中其碳浓度为10重量％以上的尺寸为1μm以上。

5. 发明申请

US20090025840A1 Cu-Ni-Si-Co-Cr Copper Alloy for Electronic Materials and Method for Manufacturing Same 有权
标题翻译：用于电子材料的Cu-Ni-Si-Co-Cr铜合金及其制造方法
公开(公告)号：US20090025840A1
公开(公告)日：2009-01-29
申请号：US11887660
申请日：2006-03-31
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22F1/08 , C22C9/06 , C22C9/02 , C22C9/04
CPC分类号： H01L23/49579 , C22C9/06 , C22F1/08 , H01L2924/0002 , H01L2924/00
摘要： The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09-about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm2, or Pc/P is equal to or less than about 0.3 wherein P is the number of inclusions dispersed in the alloy and having the size of 1 μm or more, and Pc is the number of inclusions, among those having the size of 1 μm or more, whose carbon concentration is 10% or more by weight.
摘要翻译：本发明提供了具有优异特性的电子材料的Cu-Ni-Si-Co-Cr铜合金，例如显着提高的强度和导电性。一方面，本发明是用于电子材料的Cu-Ni-Si-Co-Cr铜合金，其包含约0.5-约2.5重量％的Ni，约0.5-约2.5重量％的Co，约0.30-约 1.2重量％的Si和约0.09〜约0.5重量％的Cr，余量为Cu和不可避免的杂质，其中Ni和Co的总重量与合金组合物中的Si的重量比满足式：约4 <= [Ni + Co] / Si <=约5，合金组成中Ni与Co的比例满足下式：约0.5 <= Ni / Co <= 2，其中Pc相等或小于约15/1000mum2，或Pc / P等于或小于约0.3，其中P是分散在合金中并且具有1um或更大的尺寸的夹杂物的数量，Pc是夹杂物的数量，其中碳浓度为10重量％以上的大小为1μm以上的那些。

6. 发明申请

US20110027122A1 Cu-Ni-Si-Co-Cr System Alloy for Electronic Materials 审中-公开
标题翻译：用于电子材料的Cu-Ni-Si-Co-Cr系合金
公开(公告)号：US20110027122A1
公开(公告)日：2011-02-03
申请号：US12935688
申请日：2009-03-30
申请人： Naohiko Era , Hiroshi Kuwagaki
发明人： Naohiko Era , Hiroshi Kuwagaki
IPC分类号： C22C9/06
CPC分类号： C22C9/06 , C22C9/10 , C22F1/08 , H01L2924/0002 , H01L2924/00
摘要： The problem to be solved by the present invention is to provide a significant improvement in the properties in Cu—Ni—Co—Si alloy by adding Cr, i.e., to provide Corson alloys having high strength and high electrical conductivity. There is provided a copper alloy for electronic materials comprising 1.0 to 4.5 mass % of Ni, 0.50 to 1.2 mass % of Si, 0.1 to 2.5 mass % of Co, 0.003 to 0.3 mass % of Cr, with the balance being Cu and unavoidable impurities, the mass concentration ratio of the total mass of Ni and Co to Si ([Ni+Co]/Si ratio) satisfies the formula: 4≦[Ni+Co]/Si≦5, and with regard to Cr—Si compound whose size is 0.1 to 5 μm dispersed in the material, atomic concentration ratio of Cr to Si in the dispersed particle is 1-5, and area dispersion density thereof is more than 1×104/mm2, and not more than 1×106/mm2.
摘要翻译：通过本发明要解决的问题是通过添加Cr来提供Cu-Ni-Co-Si合金的性能的显着改进，即提供具有高强度和高导电性的科森合金。提供了一种电子材料用铜合金，其含有1.0〜4.5质量％的Ni，0.50〜1.2质量％的Si，0.1〜2.5质量％的Co，0.003〜0.3质量％的Cr，余量为Cu和不可避免的杂质，Ni和Co对Si（[Ni + Co] / Si比）的总质量的质量浓度比满足下式：4＆nlE; [Ni + Co] / Si＆nlE; 5，关于Cr-Si化合物尺寸为0.1〜5μm，分散粒子中Cr与Si的原子浓度比为1-5，面积分散密度大于1×10 4 / mm 2，1×10 6 / mm 2以下。

7. 发明申请

US20090301614A1 CU-NI-SI-CO COPPER ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：用于电子材料的CU-NI-SI-CO铜合金及其制造方法
公开(公告)号：US20090301614A1
公开(公告)日：2009-12-10
申请号：US12312990
申请日：2008-08-22
申请人： Naohiko Era , Hiroshi Kuwagaki
发明人： Naohiko Era , Hiroshi Kuwagaki
IPC分类号： C22F1/08 , C22C9/06
CPC分类号： C22C9/06 , B21B2003/005 , C22F1/08 , H01B1/026
摘要： The invention provides Cu—Ni—Si—Co alloys having excellent strength, electrical conductivity, and press-punching properties. In one aspect, the invention is a copper alloy for electronic materials, containing 1.0 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, and 0.30 to 1.2 mass % of Si, the balance being Cu and unavoidable impurities, wherein the copper alloy for electronic material has a [Ni+Co+Si] content in which the median value ρ (mass %) satisfies the formula 20 (mass %)≦ρ≦60 (mass %), the standard deviation σ (Ni+Co+Si) satisfies the formula σ (Ni+Co+Si)≦30 (mass %), and the surface area ratio S (%) satisfies the formula 1%≦S≦10%, in relation to the compositional variation and the surface area ratio of second-phase particles size of 0.1 μm or greater and 1 μm or less when observed in a cross section parallel to a rolling direction.
摘要翻译：本发明提供了具有优异的强度，导电性和冲压性能的Cu-Ni-Si-Co合金。一方面，本发明是一种电子材料用铜合金，其含有1.0〜2.5质量％的Ni，0.5〜2.5质量％的Co，0.30〜1.2质量％的Si，余量为Cu和不可避免的杂质，用于电子材料的铜合金具有其中中值rho（质量％）满足公式20（质量％）<= rho <= 60（质量％）的[Ni + Co + Si]含量，标准偏差σ + Co + Si）满足公式sigma（Ni + Co + Si）≤30（质量％），表面积比S（％）满足公式1％<= S <= 10％当在与轧制方向平行的横截面中观察时，组成变化和第二相颗粒尺寸的表面积比为0.1μm或更大和1μm或更小。

8. 发明授权

US08444779B2 Cu—Ni—Si—Co copper alloy for electronic materials and method for manufacturing same 有权
标题翻译：用于电子材料的Cu-Ni-Si-Co铜合金及其制造方法
公开(公告)号：US08444779B2
公开(公告)日：2013-05-21
申请号：US12312990
申请日：2008-08-22
申请人： Naohiko Era , Hiroshi Kuwagaki
发明人： Naohiko Era , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： C22C9/06 , B21B2003/005 , C22F1/08 , H01B1/026
摘要： The invention provides Cu—Ni—Si—Co alloys having excellent strength, electrical conductivity, and press-punching properties. In one aspect, the invention is a copper alloy for electronic materials, containing 1.0 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, and 0.30 to 1.2 mass % of Si, the balance being Cu and unavoidable impurities, wherein the copper alloy for electronic material has a [Ni+Co+Si] content in which the median value ρ (mass %) satisfies the formula 20 (mass %)≦ρ≦60 (mass %), the standard deviation σ (Ni+Co+Si) satisfies the formula σ (Ni+Co+Si)≦30 (mass %), and the surface area ratio S (%) satisfies the formula 1%≦S≦10%, in relation to the compositional variation and the surface area ratio of second-phase particles size of 0.1 μm or greater and 1 μm or less when observed in a cross section parallel to a rolling direction.
摘要翻译：本发明提供了具有优异的强度，导电性和冲压性能的Cu-Ni-Si-Co合金。一方面，本发明是一种电子材料用铜合金，其含有1.0〜2.5质量％的Ni，0.5〜2.5质量％的Co，0.30〜1.2质量％的Si，余量为Cu和不可避免的杂质，用于电子材料的铜合金具有其中中值rho（质量％）满足式20（质量％）@ 60（质量％），标准偏差σ（Ni + Co）的[Ni + Co + Si] + Si）满足公式sigma（Ni + Co + Si）≤30（质量％），表面积比S（％）满足公式1％@ S @ 10％，相对于组成变化和表面当在与轧制方向平行的截面中观察时，第二相粒径的面积比为0.1μm以上且1μm以下。

9. 发明授权

US09478323B2 Cu—Si—Co-based copper alloy for electronic materials and method for producing the same 有权
标题翻译：用于电子材料的Cu-Si-Co基铜合金及其制造方法
公开(公告)号：US09478323B2
公开(公告)日：2016-10-25
申请号：US14006735
申请日：2012-03-02
申请人： Yasuhiro Okafuji , Hiroshi Kuwagaki
发明人： Yasuhiro Okafuji , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , H01B1/02 , C22F1/08 , C22C1/02
CPC分类号： H01B1/026 , C22C1/02 , C22C9/06 , C22F1/08
摘要： A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at β angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by β scanning at α=35° is at least 2.5 times that of a standard copper powder.
摘要翻译：提供了具有增强的弹簧极限的Cu-Si-Co基合金。铜合金含有0.5-2.5质量％的Co，0.1-0.7质量％的Si，余量为Cu和不可避免的杂质，其中，从使用轧制表面作为参考的X射线衍射极图的测量得到的结果在α= 35°下通过β扫描相对于{200} Cu平面的{111} Cu平面中的衍射峰之间的角度为90°的峰高度为标准铜粉末的至少2.5倍。

10. 发明授权

US4610510A Liquid crystal display cell having stepped substrate ends and method for manufacture thereof 失效
标题翻译：具有台阶基板端的液晶显示单元及其制造方法
公开(公告)号：US4610510A
公开(公告)日：1986-09-09
申请号：US618450
申请日：1984-06-07
申请人： Fumiaki Funada , Hiroshi Kuwagaki , Kunihiko Yamamoto , Masataka Matsuura
发明人： Fumiaki Funada , Hiroshi Kuwagaki , Kunihiko Yamamoto , Masataka Matsuura
IPC分类号： G02F1/1339 , G02F1/13
CPC分类号： G02F1/1339 , Y10S359/90
摘要： A method for manufacturing a liquid crystal display cell comprises the steps of providing a first flexible substrate having a first end, providing a second flexible substrate which confronts the first flexible substrate and has an extended second end with respect to the first end of the first flexible substrate so as to form a stepped portion, depositing a sealing material at the stepped portion, depressing one method for the manufacture the first and second substrates against the other one, and cutting the first and second flexible substrates at 68 stepped portion.
摘要翻译：一种用于制造液晶显示单元的方法包括以下步骤：提供具有第一端的第一柔性基板，提供面对第一柔性基板的第二柔性基板，并且相对于第一柔性基板的第一端具有延伸的第二端基板，以形成台阶部分，在阶梯部分沉积密封材料，将第一和第二基板相对于另一个制造的一种方法压下，并将第一和第二柔性基板切割成阶梯部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式