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1. 发明授权

US6087044A Carbon electrode for secondary cells, a method for making the same, and a nonaqueous electrolyte secondary cell comprising the carbon electrode 失效
标题翻译：用于二次电池的碳电极，其制造方法和包含碳电极的非水电解质二次电池
公开(公告)号：US6087044A
公开(公告)日：2000-07-11
申请号：US988930
申请日：1997-12-11
申请人： Atsushi Iwase , Nozomu Okumura , Yoshitsugu Sakamoto
发明人： Atsushi Iwase , Nozomu Okumura , Yoshitsugu Sakamoto
IPC分类号： H01M10/05 , C01B31/02 , H01M4/02 , H01M4/04 , H01M4/36 , H01M4/587 , H01M4/60
CPC分类号： C04B35/532 , C04B35/6269 , H01M4/133 , H01M4/1393 , H01M4/587 , H01M4/625 , C04B2235/425 , C04B2235/5436 , H01M4/366
摘要： An electrode comprises an active substance therefor which is made of a shaped body of a carbon porous body and a low crystallinity or amorphous carbon layer formed on at least a part of surfaces of the carbon porous body. The carbon porous body further comprises crystalline carbon particles which are dispersed and held in the carbon porous body. A method for making the electrode and a nonaqueous electrolyte secondary cell comprising the electrode as a negative electrode are also described.
摘要翻译：电极包括由碳多孔体的成形体和形成在碳多孔体的至少一部分表面上的低结晶度或无定形碳层制成的活性物质。碳多孔体还包含分散并保持在碳多孔体中的结晶碳颗粒。还描述了制造电极的方法和包括该电极作为负电极的非水电解质二次电池。

2. 发明申请

US20080237301A1 Solder preform and a process for its manufacture 有权
标题翻译：焊料预制件及其制造方法
公开(公告)号：US20080237301A1
公开(公告)日：2008-10-02
申请号：US12073690
申请日：2008-03-07
申请人： Naohiko Hirano , Akira Tanahashi , Yoshitsugu Sakamoto , Kaichi Tsuruta , Takashi Ishii , Satoshi Soga
发明人： Naohiko Hirano , Akira Tanahashi , Yoshitsugu Sakamoto , Kaichi Tsuruta , Takashi Ishii , Satoshi Soga
IPC分类号： B23K35/14 , B22D29/00
CPC分类号： C22C13/00 , B21C37/02 , B21C37/04 , B22F1/0011 , B23K35/001 , B23K35/0222 , B23K35/0233 , B23K35/0244 , B23K35/262 , B23K35/3612 , B23K35/3613 , B23K35/3618 , B23K35/362 , C22C19/03 , H01L24/29
摘要： A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.
摘要翻译：从包含可热解助熔剂和高熔点金属颗粒的焊料混合物制备混合母合金，将混合母合金装入大量熔融焊料中并搅拌，并制备坯料。然后可以将坯料挤出，轧制和冲压以形成例如颗粒或垫圈。

3. 发明申请

US20070148490A1 Brazing method and brazed structure 审中-公开
标题翻译：钎焊方法和钎焊结构
公开(公告)号：US20070148490A1
公开(公告)日：2007-06-28
申请号：US10596715
申请日：2004-12-22
申请人： Tsuyoshi Hasegawa , Masaaki Ishio , Shunji Kajikawa , Yoshitsugu Sakamoto , Takayuki Hayashi
发明人： Tsuyoshi Hasegawa , Masaaki Ishio , Shunji Kajikawa , Yoshitsugu Sakamoto , Takayuki Hayashi
IPC分类号： B32B15/18
CPC分类号： F28F21/085 , B23K1/0012 , B23K1/19 , B23K35/004 , B23K35/302 , B23K2101/14 , F28D1/0308 , F28F3/025 , F28F2275/04 , H01L23/3735 , H01L23/473 , H01L2924/0002 , Y10S165/905 , Y10T428/12854 , Y10T428/1291 , Y10T428/12917 , Y10T428/12924 , Y10T428/12937 , Y10T428/12951 , Y10T428/12979 , H01L2924/00
摘要： A brazing method which provides a braze joint having excellent corrosion resistance and a brazed structure including such a braze joint includes assembling a first member and a second member to be joined into a temporary assembly, the first member including a base plate made of a ferrous material and a diffusion suppressing layer laminated on the base plate and composed of a Ni—Cr alloy essentially including not less than about 15% and not greater than about 40% of Cr, the second member being disposed on the diffusion suppressing layer of the first member with intervention of a brazing material of a Cu—Ni alloy essentially including not less than about 10% and not greater than about 20% of Ni, and maintaining the temporary assembly at a temperature of not less than about 1,200° C. to fuse the brazing material and diffuse Ni atoms and Cr atoms into the fused brazing material from the diffusion suppressing layer to form the braze joint, causing the resulting brazing material of the braze joint to have an increased melting point due to the increase of the Ni and Cr contents of the braze joint to self-solidify the braze joint, and then cooling the resulting assembly.
摘要翻译：提供具有优异耐腐蚀性的钎焊接头和包括这种钎焊接头的钎焊结构的钎焊方法包括将第一构件和待接合的第二构件组装到临时组件中，所述第一构件包括由铁质材料制成的基板以及层叠在所述基板上并由基本上包含不少于约15％且不大于约40％的Cr的Ni-Cr合金构成的扩散抑制层，所述第二构件设置在所述第一构件的扩散抑制层上用Cu-Ni合金的钎焊材料介入，其基本上不小于Ni的约10％且不大于约20％，并且将临时组件保持在不低于约1200℃的温度以熔化将钎焊材料和扩散Ni原子和Cr原子从扩散抑制层扩散到熔融钎焊材料中以形成钎焊接头，导致所得的钎焊材料由于钎焊接头的Ni和Cr含量的增加使钎焊接头自固化，然后冷却所得到的组件，从而使熔点增加。

4. 发明授权

US6118110A Ceramic-metal junction structure and a method for manufacturing the same 有权
公开(公告)号：US6118110A
公开(公告)日：2000-09-12
申请号：US233098
申请日：1999-01-19
申请人： Masayuki Kobayashi , Makoto Shirai , Yoshitsugu Sakamoto
发明人： Masayuki Kobayashi , Makoto Shirai , Yoshitsugu Sakamoto
IPC分类号： B23K1/19 , B23K35/30 , C04B37/02 , C22C9/06 , H05B3/02 , H05B3/10
CPC分类号： C04B37/008 , C04B37/026 , C04B2237/122 , C04B2237/123 , C04B2237/124 , C04B2237/125 , C04B2237/126 , C04B2237/343 , C04B2237/405 , C04B2237/62 , C04B2237/704 , C04B2237/708 , C04B2237/72 , C04B2237/765 , C04B2237/78 , C04B2237/84
摘要： A metallic layer is provided on the surface of a ceramic body. A junction layer is provided on the metallic layer. The junction layer contains 40.about.98 wt % Cu and 2.about.20 wt % Ni. A conductive member is bonded to the metallic layer via the junction layer.

5. 发明授权

US08029918B2 Brazing method and brazed structure 失效
标题翻译：钎焊方法和钎焊结构
公开(公告)号：US08029918B2
公开(公告)日：2011-10-04
申请号：US12829413
申请日：2010-07-02
申请人： Tsuyoshi Hasegawa , Masaaki Ishio , Shunji Kajikawa , Yoshitsugu Sakamoto , Takayuki Hayashi
发明人： Tsuyoshi Hasegawa , Masaaki Ishio , Shunji Kajikawa , Yoshitsugu Sakamoto , Takayuki Hayashi
IPC分类号： B32B15/18 , B32B15/20 , F28F21/08
CPC分类号： F28F21/085 , B23K1/0012 , B23K1/19 , B23K35/004 , B23K35/302 , B23K2101/14 , F28D1/0308 , F28F3/025 , F28F2275/04 , H01L23/3735 , H01L23/473 , H01L2924/0002 , Y10S165/905 , Y10T428/12854 , Y10T428/1291 , Y10T428/12917 , Y10T428/12924 , Y10T428/12937 , Y10T428/12951 , Y10T428/12979 , H01L2924/00
摘要： A brazing method includes assembling a first member and a second member, the first member including a base plate made of a ferrous material and a diffusion suppressing layer laminated on the base plate and made of a Ni—Cr alloy including more than about 15% and less than about 40% of Cr, the second member being disposed on the first member with a brazing material of a Cu—Ni alloy including more than about 10% and less than about 20% of Ni therebetween, and maintaining the temporary assembly at a temperature of more than about 1,200° C. to fuse the brazing material and diffuse Ni atoms and Cr atoms into the fused brazing material to form the braze joint, causing the resulting brazing material to have an increased melting point due to the Ni and Cr contents of the braze joint to self-solidify the braze joint, and then cooling the resulting assembly.
摘要翻译：钎焊方法包括组装第一构件和第二构件，第一构件包括由铁基材制成的基板和层压在基板上并由包括大于约15％的Ni-Cr合金制成的扩散抑制层，以及小于约40％的Cr，第二构件使用包含大于约10％且小于约20％的Ni的Cu-Ni合金的钎焊材料设置在第一构件上，并且将临时组件保持在温度大于约1200℃，熔化钎焊材料并将Ni原子和Cr原子扩散到熔融钎焊材料中以形成钎焊接头，导致由于Ni和Cr含量导致的钎焊材料具有增加的熔点的钎焊接头自动固化钎焊接头，然后冷却所得组件。

6. 发明授权

US07601625B2 Method for manufacturing semiconductor device having solder layer 有权
标题翻译：具有焊料层的半导体器件的制造方法
公开(公告)号：US07601625B2
公开(公告)日：2009-10-13
申请号：US11108908
申请日：2005-04-19
申请人： Chikage Noritake , Yoshitsugu Sakamoto , Akira Tanahashi , Hideki Okada , Tomomasa Yoshida
发明人： Chikage Noritake , Yoshitsugu Sakamoto , Akira Tanahashi , Hideki Okada , Tomomasa Yoshida
IPC分类号： H01L21/44
CPC分类号： H01L24/83 , H01L24/29 , H01L24/32 , H01L2224/04026 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29298 , H01L2224/325 , H01L2224/83101 , H01L2224/83801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01016 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/14 , H01L2924/19043 , H01L2924/00 , H01L2924/01028 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： A method for manufacturing a semiconductor device having a solder layer includes the steps of: grinding a mounting surface of a semiconductor chip; etching the mounting surface of the chip; forming an electrode on the mounting surface of the chip; assembling the chip, the solder layer and a base in this order; and heating the chip, the solder layer and the base to be equal to or higher than a solidus temperature of the solder layer so that the solder layer is reflowed for soldering the chip on the base.
摘要翻译：一种制造具有焊料层的半导体器件的方法包括以下步骤：研磨半导体芯片的安装表面; 蚀刻芯片的安装表面; 在芯片的安装表面上形成电极; 按顺序组装芯片，焊料层和基体; 并且将芯片，焊料层和基底加热至等于或高于焊料层的固相线温度，使得焊料层回流以将芯片焊接在基底上。

7. 发明授权

US06242838B1 Commutator and method of manufacturing the same 有权
标题翻译：换向器及其制造方法
公开(公告)号：US06242838B1
公开(公告)日：2001-06-05
申请号：US09241291
申请日：1999-02-01
申请人： Kenzo Kiyose , Yoshio Ebihara , Keiichi Yamashita , Mutsumi Yoshino , Yoshitsugu Sakamoto , Motoya Ito
发明人： Kenzo Kiyose , Yoshio Ebihara , Keiichi Yamashita , Mutsumi Yoshino , Yoshitsugu Sakamoto , Motoya Ito
IPC分类号： H02K1306
CPC分类号： H02K13/04 , H01R39/06 , H01R39/32
摘要： A commutator is composed of a contact unit, a base member made of insulation material and a terminal unit. The contact unit has a flat brush-contact surface and a connection surface opposite the brush contact surface. The contact unit also has a plurality of commutator segments. The terminal unit has a plurality of conductive terminal members. The base member supports the commutator segments. The commutator also has an electrical connection structure having a set of a convex member and a concave member and a plurality of connection members disposed between the convex member and the concave member to connect the plurality of the commutator segments and terminal members respectively.
摘要翻译：换向器由接触单元，由绝缘材料制成的基座构件和端子单元构成。接触单元具有平坦的电刷接触表面和与电刷接触表面相对的连接表面。接触单元还具有多个换向片段。端子单元具有多个导电端子构件。基座构件支撑换向器段。换向器还具有一个电气连接结构，其具有一组凸起部件和凹形部件，以及多个连接部件，分别设置在凸部件和凹部件之间，以分别连接多个换向器部件和端子部件。

8. 发明授权

US06185544B2 Processing system for charge request data 失效
标题翻译：收费请求数据处理系统
公开(公告)号：US06185544B2
公开(公告)日：2001-02-06
申请号：US08871131
申请日：1997-06-06
申请人： Yoshitsugu Sakamoto , Shinsuke Kawahara , Kimio Handa , Hideto Nishizawa , Haruro Sato , Toshiyuki Furuya , Tsutomu Hosoi , Takashi Yamada , Fujio Wakabayashi
发明人： Yoshitsugu Sakamoto , Shinsuke Kawahara , Kimio Handa , Hideto Nishizawa , Haruro Sato , Toshiyuki Furuya , Tsutomu Hosoi , Takashi Yamada , Fujio Wakabayashi
IPC分类号： G06F1760
CPC分类号： G06Q40/02 , G06Q20/04 , G06Q20/10 , G06Q20/102
摘要： The processing system for charge request data of the present invention comprises data input means for inputting charge request data, including charge transfer day, requesting organization, paying organization and an amount of transfer, a master file where information relating to requesting organizations and paying organizations are registered, charge transfer processing means for preparing a charge transfer detailed file including individual charge request data where said charge request data are classified to each requesting organization based on said master file and summary data summarizing number of transfers and amount of transfer for each type of the requesting organization, and for preparing a transfer slip containing charge transfer information of each requesting organization for each paying organization from said charge transfer detailed file, initial cost data containing information necessary for processing for financial accounting, and overall charge transfer data on the day of transfer, and input/output means for displaying, printing and transmitting the data prepared by said charge transfer processing means and for inputting operation, and executes processing necessary for charge transfer for each paying organization by inputting the charge request data.
摘要翻译：本发明的收费请求数据处理系统包括用于输入收费请求数据的数据输入装置，包括费用转移日，请求组织，支付组织和传送量，与请求组织和支付组织有关的信息的主文件注册的电费转移处理装置，用于根据所述主文件准备包括各个费用请求数据的各个费用请求数据的电荷转移详细文件，并且汇总数据的转移次数和每个类型的转移量的汇总数据请求组织，以及从所述费用转移详细文件准备包含每个付费组织的每个请求组织的费用转移信息的转账单，包含用于财务会计处理所需的信息的初始成本数据以及当天的总计费转移数据 f传送和用于显示，打印和发送由所述电荷转移处理装置准备的数据并用于输入操作的输入/输出装置，并通过输入充电请求数据执行每个支付组织的电荷转移所需的处理。

9. 发明授权

US07235876B2 Semiconductor device having metallic plate with groove 有权
公开(公告)号：US07235876B2
公开(公告)日：2007-06-26
申请号：US11516501
申请日：2006-09-07
申请人： Tomomi Okumura , Yoshitsugu Sakamoto , Naohiko Hirano , Kuniaki Mamitsu
发明人： Tomomi Okumura , Yoshitsugu Sakamoto , Naohiko Hirano , Kuniaki Mamitsu
IPC分类号： H01L23/10 , H01L23/34
CPC分类号： H01L23/051 , H01L23/492 , H01L23/49503 , H01L23/49513 , H01L23/49541 , H01L23/49562 , H01L23/49575 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/26175 , H01L2224/27013 , H01L2224/291 , H01L2224/29111 , H01L2224/2919 , H01L2224/32014 , H01L2224/32057 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83051 , H01L2224/83385 , H01L2224/83455 , H01L2224/83801 , H01L2224/92147 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2924/0132 , H01L2224/83 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: first and second metallic plates, each of which includes a heat radiation surface and an inner surface; a semiconductor element between the metallic plates; a block between the second metallic plate and the semiconductor element; a solder member between the second metallic plate and the block; and a resin mold. The heat radiation surface is exposed from the resin mold. The second metallic plate includes a groove for preventing the solder member from expanding outside of the block. The groove is disposed on the inner surface and disposed on an outer periphery of the block. The second metallic plate further includes an inner surface member on an inner surface of the groove. The inner surface member has a solder wettability, which is larger than a solder wettability of the block.

10. 发明申请

US20050233568A1 Method for manufacturing semiconductor device having solder layer 有权
标题翻译：具有焊料层的半导体器件的制造方法
公开(公告)号：US20050233568A1
公开(公告)日：2005-10-20
申请号：US11108908
申请日：2005-04-19
申请人： Chikage Noritake , Yoshitsugu Sakamoto , Akira Tanahashi , Hideki Okada , Tomomasa Yoshida
发明人： Chikage Noritake , Yoshitsugu Sakamoto , Akira Tanahashi , Hideki Okada , Tomomasa Yoshida
IPC分类号： H01L21/60 , H01L21/44 , H01L23/482 , H01L23/488
CPC分类号： H01L24/83 , H01L24/29 , H01L24/32 , H01L2224/04026 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29298 , H01L2224/325 , H01L2224/83101 , H01L2224/83801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01016 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/14 , H01L2924/19043 , H01L2924/00 , H01L2924/01028 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： A method for manufacturing a semiconductor device having a solder layer includes the steps of: grinding a mounting surface of a semiconductor chip; etching the mounting surface of the chip; forming an electrode on the mounting surface of the chip; assembling the chip, the solder layer and a base in this order; and heating the chip, the solder layer and the base to be equal to or higher than a solidus temperature of the solder layer so that the solder layer is reflowed for soldering the chip on the base.
摘要翻译：一种制造具有焊料层的半导体器件的方法包括以下步骤：研磨半导体芯片的安装表面; 蚀刻芯片的安装表面; 在芯片的安装表面上形成电极; 按顺序组装芯片，焊料层和基体; 并且将芯片，焊料层和基底加热至等于或高于焊料层的固相线温度，使得焊料层回流以将芯片焊接在基底上。

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