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    • 2. 发明专利
    • Alignment marker, and lithographic apparatus and device method for manufacturing using the same
    • 对准标记,以及使用其制造的平面设备和设备方法
    • JP2009278126A
    • 2009-11-26
    • JP2009186649
    • 2009-08-11
    • Asml Netherlands Bvエーエスエムエル ネザーランズ ビー.ブイ.
    • HEERENS GERT-JANBRUINSMA ANASTASIUS JACOBUS ANKLINKHAMER JACOB FREDRIK FRISOMARINUS VAN DE VEN BASTIAAN LAVAN MIERLO HUBERT ADRIAAN
    • G03F9/00H01L21/027G01B11/00
    • G03F9/7065G03F9/7076G03F9/7088
    • PROBLEM TO BE SOLVED: To provide an alignment marker and an alignment method that allow inexpensive alignment of a reflective mask with a support structure thereof in order to cope with difficulty in executing the alignment of the reflective mask with the support structure thereof on the basis of the reflectivity difference between an absorbing layer and a reflective substrate by using long-wavelength light in a lithography projection apparatus using short-wavelength radiation.
      SOLUTION: The alignment method includes a step in which an alignment marker 5, provided on a mask MA and juxtaposed with a pattern 3 to be projected on a substrate W while having a height difference, is irradiated with a light beam 4 emitted from a light source 7 in an alignment sensor 1, its reflected light is processed by an imaging optical element 8 and received by a detector 9, and the position of the height difference is detected so as to use it for alignment between the mask MA and a support MT. Therefore, the alignment marker 5 and the pattern 3 can be simultaneously manufactured in the same manufacturing process, a risk of poor alignment between both can be reduced, and lighting of the alignment marker 5 can be executed independently of lighting of the pattern 3 with an inexpensive light source 7, thereby achieving alignment in situ by providing the alignment sensor 1 in a lithographic apparatus.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了提供一种对准标记和对准方法,其允许反光掩模与其支撑结构的便宜对准,以便应对难以执行其支撑结构的反射掩模的对准 在使用短波长辐射的光刻投影装置中通过使用长波长光来吸收层和反射基板之间的反射率差的基础。 解决方案:对准方法包括一个步骤,其中设置在掩模MA上并与投影在基板W上的图案3同时具有高差的对准标记5被照射到发射的光束4 来自对准传感器1的光源7,其反射光被成像光学元件8处理并由检测器9接收,并且检测高度差的位置,以便将其用于掩模MA和 支持MT。 因此,可以在相同的制造工艺中同时制造对准标记5和图案3,可以降低两者之间的对准不良的风险,并且可以独立于图案3的点亮来执行对准标记5的点亮 廉价的光源7,从而通过在光刻设备中提供对准传感器1来实现对准。 版权所有(C)2010,JPO&INPIT
    • 9. 发明专利
    • Alignment marker and lithographic apparatus and device fabricating method using the same
    • 对准标记和平版印刷设备及使用其的设备制造方法
    • JP2005354066A
    • 2005-12-22
    • JP2005168398
    • 2005-06-08
    • Asml Netherlands Bvエイエスエムエル ネザランドズ ベスローテン フエンノートシャップ
    • HEERENS GERT-JANBRUINSMA ANASTASIUS JACOBUS ANKLINKHAMER JACOB FREDRIK FRISOMARINUS VAN DE VEN BASTIAAN LAVAN MIERLO HUBERT ADRIAAN
    • G03F9/00G01B11/00H01L21/027
    • G03F9/7065G03F9/7076G03F9/7088
    • PROBLEM TO BE SOLVED: To provide an alignment marker and a method of alignment that enable inexpensive alignment of a reflective mask with respect to a supporting structure in order to cope with the difficulty in aligning the reflective mask and supporting structure thereof based on the reflectivity difference between an absorbing layer and reflective substrate through the use of long wavelength light in a lithography projection apparatus in which short wavelength radiation is to be used.
      SOLUTION: The method of alignment of the present invention includes steps of: irradiating a alignment marker 5 having at least one height difference with a light beam 4 emitted from a light source 7 in an alignment sensor 1, the alignment marker 5 being provided on a mask MA side by side with a pattern 3 to be projected to a substrate W; processing reflected light coming from the alignment marker 5 by an imaging optical element 8 to receive a detector 9; and detecting the position of the height difference to use for alignment between the mask MA and supporting structure MT. Since the alignment marker 5 and pattern 3 can thereby be fabricated through the identical production process at the same time, a risk of an alignment failure between the both components can be reduced and the irradiation of the alignment marker 5 can be effected independently on the irradiation of the pattern 3 with an inexpensive light source 7, arranging the above alignment sensor 1 in a lithographic apparatus makes it possible to provide an alignment in situ.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了提供一种对准标记和对准方法,其能够使反射掩模相对于支撑结构便宜的对准,以便应对基于反射掩模和支撑结构的对准难度,基于 在使用短波长辐射的光刻投影装置中通过使用长波长的光吸收层和反射基板之间的反射率差。 解决方案:本发明的对准方法包括以下步骤:向对准传感器1照射与光源7发射的光束4具有至少一个高度差的对准标记5,对准标记5为 在掩模MA上并排设置有要投射到基板W的图案3; 通过成像光学元件8处理来自对准标记5的反射光,以接收检测器9; 并且检测用于掩模MA和支撑结构MT之间的对准的高度差的位置。 由于可以通过相同的制造方法同时制造对准标记5和图案3,所以可以降低两部件之间的取向失败的风险,并且可以在照射下独立地实现对准标记5的照射 具有便宜的光源7的图案3,将上述对准传感器1布置在光刻设备中使得可以原位提供对准。 版权所有(C)2006,JPO&NCIPI