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1. 发明专利

JP2006352120A LITHOGRAPHIC DEVICE ADAPTED TO CALIBRATE IMAGING SYSTEM WITH SENSOR, METHOD OF FABRICATING DEVICE, DEVICE FABRICATED BY THE METHOD 审中-公开
公开(公告)号：JP2006352120A
公开(公告)日：2006-12-28
申请号：JP2006161788
申请日：2006-06-12
申请人： ASML NETHERLANDS BV
发明人： VENEMA WILLEM J , BRUINSMA ANASTASIUS JACOBUS AN , JOERI LOF , BOON EDUARDUS JOHANNES GERARDU
IPC分类号： H01L21/027 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide a lithographic device adapted to calibrate an array of individually controllable elements for patterning a beam so as to detect and compensate a malfunction or degradation. SOLUTION: The lithographic device includes an illumination system, an array of individually controllable elements, a projection system, a substrate table, and a sensor system. The illumination system supplies a beam of radiation. The array of individually controllable elements patterns the beam. The projection system projects the patterned beam onto a target plane, the patterned beam including an array of radiation spots. The substrate table supports a substrate such that a target surface of the substrate substantially coincides with the target plane. The sensor system includes an array of detector elements arranged to receive at least one of the spots. The sensor system measures the energy of the spot or each received spot and provides an output signal indicative of the energy of the spot or each received spot. COPYRIGHT: (C)2007,JPO&INPIT

2. 发明专利

JP2009278126A Alignment marker, and lithographic apparatus and device method for manufacturing using the same 有权
标题翻译：对准标记，以及使用其制造的平面设备和设备方法
公开(公告)号：JP2009278126A
公开(公告)日：2009-11-26
申请号：JP2009186649
申请日：2009-08-11
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： HEERENS GERT-JAN , BRUINSMA ANASTASIUS JACOBUS AN , KLINKHAMER JACOB FREDRIK FRISO , MARINUS VAN DE VEN BASTIAAN LA , VAN MIERLO HUBERT ADRIAAN
IPC分类号： G03F9/00 , H01L21/027 , G01B11/00
CPC分类号： G03F9/7065 , G03F9/7076 , G03F9/7088
摘要： PROBLEM TO BE SOLVED: To provide an alignment marker and an alignment method that allow inexpensive alignment of a reflective mask with a support structure thereof in order to cope with difficulty in executing the alignment of the reflective mask with the support structure thereof on the basis of the reflectivity difference between an absorbing layer and a reflective substrate by using long-wavelength light in a lithography projection apparatus using short-wavelength radiation.
SOLUTION: The alignment method includes a step in which an alignment marker 5, provided on a mask MA and juxtaposed with a pattern 3 to be projected on a substrate W while having a height difference, is irradiated with a light beam 4 emitted from a light source 7 in an alignment sensor 1, its reflected light is processed by an imaging optical element 8 and received by a detector 9, and the position of the height difference is detected so as to use it for alignment between the mask MA and a support MT. Therefore, the alignment marker 5 and the pattern 3 can be simultaneously manufactured in the same manufacturing process, a risk of poor alignment between both can be reduced, and lighting of the alignment marker 5 can be executed independently of lighting of the pattern 3 with an inexpensive light source 7, thereby achieving alignment in situ by providing the alignment sensor 1 in a lithographic apparatus.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种对准标记和对准方法，其允许反光掩模与其支撑结构的便宜对准，以便应对难以执行其支撑结构的反射掩模的对准在使用短波长辐射的光刻投影装置中通过使用长波长光来吸收层和反射基板之间的反射率差的基础。解决方案：对准方法包括一个步骤，其中设置在掩模MA上并与投影在基板W上的图案3同时具有高差的对准标记5被照射到发射的光束4 来自对准传感器1的光源7，其反射光被成像光学元件8处理并由检测器9接收，并且检测高度差的位置，以便将其用于掩模MA和支持MT。因此，可以在相同的制造工艺中同时制造对准标记5和图案3，可以降低两者之间的对准不良的风险，并且可以独立于图案3的点亮来执行对准标记5的点亮廉价的光源7，从而通过在光刻设备中提供对准传感器1来实现对准。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2007088465A Photolithography apparatus, particle inspection system, particle inspection method, and device manufacturing method 有权
标题翻译：光刻设备，颗粒检查系统，颗粒检查方法和设备制造方法
公开(公告)号：JP2007088465A
公开(公告)日：2007-04-05
申请号：JP2006252549
申请日：2006-09-19
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： BRUINSMA ANASTASIUS JACOBUS AN , VAN GROOS PIETER JOHANNES MARI , HOOGKAMP JAN FREDERIK , MODDEMEIJER KEES , DRAAISMA FOLKERT
IPC分类号： H01L21/66 , G01N21/956 , G03F7/20 , H01L21/027
CPC分类号： G01N21/956 , G03F7/70791 , G03F7/70983
摘要： PROBLEM TO BE SOLVED: To provide a particle inspection system and a particle inspection method for inspecting particles present on the top surface of a substrate. SOLUTION: A photolithography apparatus transfers a pattern from a patterning device to a substrate, and includes the particle inspection system for inspecting the particles present on the top surface of the substrate. The particle inspection system incorporates a radiation source for the radiation generation, illumination optical system guiding the radiation generated by the radiation source to a detection area at the top surface of the substrate, detection optical system receiving the radiation from the inspection area at the top surface of the substrate, and a detector coupled to the inspection optical system for generating at least one measurement signal. This apparatus further incorporates a processing unit to determine the height of a particle based on at least one measurement signal and generate a height excess signal if the height exceeds a threshold value. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于检查存在于基板的顶表面上的颗粒的颗粒检查系统和颗粒检查方法。解决方案：光刻装置将图案从图案形成装置传送到基板，并且包括用于检查存在于基板顶表面上的颗粒的颗粒检查系统。颗粒检查系统包括用于辐射生成的辐射源，将由辐射源产生的辐射引导到基板顶表面处的检测区域的照明光学系统，接收来自顶表面上的检查区域的辐射的检测光学系统以及耦合到检查光学系统的检测器，用于产生至少一个测量信号。该装置还包括处理单元，用于基于至少一个测量信号确定颗粒的高度，并且如果高度超过阈值则产生高度过剩信号。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2009021625A Lithographic apparatus, and device manufacturing method 审中-公开
标题翻译： LITHOGRAPHIC设备和设备制造方法
公开(公告)号：JP2009021625A
公开(公告)日：2009-01-29
申请号：JP2008233350
申请日：2008-09-11
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： GUI CHENG-QUN , BRUINSMA ANASTASIUS JACOBUS AN , DE JAGER PIETER WILLEM HERMAN , VENEMA WILLEM JURRIANUS
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/7025 , G03F7/70258 , G03F7/70275 , G03F7/70291 , G03F7/70791 , G03F7/70816 , G03F7/70825 , G03F7/7085
摘要： PROBLEM TO BE SOLVED: To provide a structure adjusting the position on a substrate of a patterned beam generated by a light engine relative to the substrate. SOLUTION: This structure moves an array of focusing elements, each of which focuses a portion of the patterned beam onto a point on the substrate, relative to an array of individually controllable elements to impart the pattern to the patterned beam. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供调整由光引擎相对于基板产生的图案化光束的基板上的位置的结构。解决方案：该结构移动聚焦元件的阵列，其中每个聚焦元件的阵列将图案化束的一部分相对于独立可控元件的阵列聚焦到衬底上的点上，以将图案赋予图案化的束。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2006186287A LEVEL SENSOR, LITHOGRAPHIC DEVICE AND DEVICE MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2006186287A
公开(公告)日：2006-07-13
申请号：JP2004382894
申请日：2004-12-27
申请人： ASML NETHERLANDS BV
发明人： BRUINSMA ANASTASIUS JACOBUS AN , STAALS FRANK , VAN WIJK ROBERT JAN , NIHTIANOV STOYAN
IPC分类号： H01L21/027 , G01B17/00 , G03F9/02
摘要： PROBLEM TO BE SOLVED: To provide a level sensor which is used to measure the height of a substrate in a lithographic projection device, can be also used for a single-stage immersion lithographic device, has no process dependency, is of high reaction rate, and is of a kind different from a conventional type. SOLUTION: The level sensor includes a transmitter 10 and a receiver 11. The transmitter is configured to transmit a pressure wave 100 to a predetermined position on the surface of a substrate between the substrate W and a projection system PS, and to allow the substrate W to reflect at least a part of the pressure wave. The receiver receives at least a part of the reflected wave. The level sensor is configured to determine the height of the surface in the substrate W based on the pressure wave transmitted and received. The level sensor can be used for immersion process, quickly works and has a scarce process dependency, because the pressure wave is used. COPYRIGHT: (C)2006,JPO&NCIPI

6. 发明专利

JP2006086529A Lithographic apparatus and device manufacturing method 有权
标题翻译： LITHOGRAPHIC装置和装置制造方法
公开(公告)号：JP2006086529A
公开(公告)日：2006-03-30
申请号：JP2005264568
申请日：2005-09-13
申请人： Asml Netherlands Bv , エイエスエムエルネザランドズベスローテンフエンノートシャップ
发明人： BASELMANS JOHANNES JACOBUS MAT , BRUINSMA ANASTASIUS JACOBUS AN , HERMAN DE JAGER PIETER W , VINK HENRI JOHANNES PETRUS , BENSCHOP JOZEF PETRUS HENRICUS
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70058 , G03F7/70291 , G03F7/70583
摘要： PROBLEM TO BE SOLVED: To provide a lithographic system and a method of lessening variations of an image quality generated by variations in profile of a lighting source.
SOLUTION: A refraction type trellis is used for dividing a radiation beam into a plurality of subbeams. These subbeams are respectively oriented to arrangements of individually controllable elements and are modulated thereby and are projected on a substrate as spot arrangements.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供光刻系统和减少由照明源的轮廓变化产生的图像质量的变化的方法。解决方案：折射型网格用于将辐射束分成多个子光束。这些子束分别定向为单独可控元件的布置，并且被调制并作为点布置被投影在基板上。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005354066A Alignment marker and lithographic apparatus and device fabricating method using the same 有权
标题翻译：对准标记和平版印刷设备及使用其的设备制造方法
公开(公告)号：JP2005354066A
公开(公告)日：2005-12-22
申请号：JP2005168398
申请日：2005-06-08
申请人： Asml Netherlands Bv , エイエスエムエルネザランドズベスローテンフエンノートシャップ
发明人： HEERENS GERT-JAN , BRUINSMA ANASTASIUS JACOBUS AN , KLINKHAMER JACOB FREDRIK FRISO , MARINUS VAN DE VEN BASTIAAN LA , VAN MIERLO HUBERT ADRIAAN
IPC分类号： G03F9/00 , G01B11/00 , H01L21/027
CPC分类号： G03F9/7065 , G03F9/7076 , G03F9/7088
摘要： PROBLEM TO BE SOLVED: To provide an alignment marker and a method of alignment that enable inexpensive alignment of a reflective mask with respect to a supporting structure in order to cope with the difficulty in aligning the reflective mask and supporting structure thereof based on the reflectivity difference between an absorbing layer and reflective substrate through the use of long wavelength light in a lithography projection apparatus in which short wavelength radiation is to be used.
SOLUTION: The method of alignment of the present invention includes steps of: irradiating a alignment marker 5 having at least one height difference with a light beam 4 emitted from a light source 7 in an alignment sensor 1, the alignment marker 5 being provided on a mask MA side by side with a pattern 3 to be projected to a substrate W; processing reflected light coming from the alignment marker 5 by an imaging optical element 8 to receive a detector 9; and detecting the position of the height difference to use for alignment between the mask MA and supporting structure MT. Since the alignment marker 5 and pattern 3 can thereby be fabricated through the identical production process at the same time, a risk of an alignment failure between the both components can be reduced and the irradiation of the alignment marker 5 can be effected independently on the irradiation of the pattern 3 with an inexpensive light source 7, arranging the above alignment sensor 1 in a lithographic apparatus makes it possible to provide an alignment in situ.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种对准标记和对准方法，其能够使反射掩模相对于支撑结构便宜的对准，以便应对基于反射掩模和支撑结构的对准难度，基于在使用短波长辐射的光刻投影装置中通过使用长波长的光吸收层和反射基板之间的反射率差。解决方案：本发明的对准方法包括以下步骤：向对准传感器1照射与光源7发射的光束4具有至少一个高度差的对准标记5，对准标记5为在掩模MA上并排设置有要投射到基板W的图案3; 通过成像光学元件8处理来自对准标记5的反射光，以接收检测器9; 并且检测用于掩模MA和支撑结构MT之间的对准的高度差的位置。由于可以通过相同的制造方法同时制造对准标记5和图案3，所以可以降低两部件之间的取向失败的风险，并且可以在照射下独立地实现对准标记5的照射具有便宜的光源7的图案3，将上述对准传感器1布置在光刻设备中使得可以原位提供对准。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2006108669A Positioning method and lithographic apparatus 有权
标题翻译：定位方法和平面设备
公开(公告)号：JP2006108669A
公开(公告)日：2006-04-20
申请号：JP2005285748
申请日：2005-09-30
申请人： Asml Netherlands Bv , エイエスエムエルネザランドズベスローテンフエンノートシャップ
发明人： KLINKHAMER JACOB FREDERIK FRIS , BRUINSMA ANASTASIUS JACOBUS AN , LEENDERS MARTINUS HENDRIKUS AN , VAN MIERLO HUBERT ADRIAAN
IPC分类号： H01L21/027 , G03F9/00
CPC分类号： G03B27/42 , G03F9/7084 , G03F9/7088
摘要： PROBLEM TO BE SOLVED: To provide a positioning method and a lithographic apparatus for aligning rapidly. SOLUTION: One embodiment can be applied to the measurement of the position of a feature in an alignment region on a mask using a sensor. The position of the feature in the alignment region is known from design. The feature whose position has been measured is identified by comparing relative positions between the measured features and the known relative position from design. The position of the mask is obtained by subtracting the known position of the identified feature from the measurement position of the identified feature. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于快速对准的定位方法和光刻设备。解决方案：一个实施例可以应用于使用传感器测量掩模上的对准区域中的特征的位置。设计中已知该对准区域中的特征的位置。测量位置的特征是通过比较测量的特征与已知的设计相对位置之间的相对位置来识别的。通过从识别的特征的测量位置减去所识别的特征的已知位置来获得掩模的位置。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005252281A Lithography apparatus for obtaining imaging on surface side or rear surface side of substrate, substrate identification method, device manufacturing method, substrate, and computer program 有权
标题翻译：用于在基板的表面侧或后表面上形成图像的基板设备，基板识别方法，设备制造方法，基板和计算机程序
公开(公告)号：JP2005252281A
公开(公告)日：2005-09-15
申请号：JP2005099664
申请日：2005-03-02
申请人： Asml Netherlands Bv , エイエスエムエルネザランドズベスローテンフエンノートシャップ
发明人： VAN DER VEEN MICHAEL , DE MOL CHRISTIANUS GERARDUS MA , VAN BUEL HENRICUS WILHELMUS MA , KLINKHAMER JACOB FREDERIK FRIS , BRUINSMA ANASTASIUS JACOBUS AN , LEENDERS MARTINUS HENDRIKUS AN , HUBERT ADRIAAN VAN MIERLO
IPC分类号： G03F7/20 , G03B27/42 , G03F9/00 , H01L21/027
CPC分类号： G03F9/7084 , G03F7/70425 , G03F9/7011 , G03F9/7019 , G03F9/7076
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus that do not take much time in substrate scanning for substrate lineup and substrate identification to be performed for application treatment selection, and that do not require extra space on a substrate to attach an identification code in the case where a multiple lithography apparatus is used for multilayer IC production. SOLUTION: The positions of a lineup mark P1 and a reference mark P2 on a substrate W, or those of two markers of a circuit form are measured by a sensor MS, and the distance between the two is calculated by an identification unit IU. Then, comparison is made between the calculated values and the predetermined values stored in MEM1 and MEM2 to identify the substrate. Otherwise, a treatment process applied to this substrate is decided, or the lineup values of this system is automatically adjusted, and so on. As the sensor MS can read both sides of the substrate W, these markers can be arranged either on the frontal side or rear side of the substrate W, and the markers can be arranged on a scribe lane as well. In this way, the effective area of the substrate for IC production is not reduced. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种方法和装置，其不需要花费太多时间在基片扫描中进行基片阵列和基片识别，以进行应用处理选择，并且不需要在基片上附加额外的空间在将多光刻设备用于多层IC制造的情况下的识别码。解决方案：通过传感器MS测量衬底W上的阵列标记P1和参考标记P2的位置或电路形式的两个标记的位置，并且通过识别单元计算两者之间的距离 IU。然后，将所计算的值和存储在MEM1和MEM2中的预定值进行比较，以识别衬底。否则，决定应用于该基板的处理过程，或者自动调整该系统的阵容值等。由于传感器MS可以读取基板W的两侧，所以这些标记可以布置在基板W的正面侧或背面上，标记也可以布置在划线上。以这种方式，IC生产用基板的有效面积不降低。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2005244238A Lithography apparatus and method for manufacturing device 有权
标题翻译： LITHOGRAPHY设备和制造设备的方法
公开(公告)号：JP2005244238A
公开(公告)日：2005-09-08
申请号：JP2005050816
申请日：2005-02-25
申请人： Asml Netherlands Bv , エイエスエムエルネザランドズベスローテンフエンノートシャップ
发明人： GUI CHENG-QUN , BRUINSMA ANASTASIUS JACOBUS AN , DE JAGER PIETER WILLEM HERMAN , VENEMA WILLEM JURRIANUS
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： G03F7/7025 , G03F7/70258 , G03F7/70275 , G03F7/70291 , G03F7/70791 , G03F7/70816 , G03F7/70825 , G03F7/7085
摘要： PROBLEM TO BE SOLVED: To provide a configuration for relatively adjusting positions of beams on a substrate, formed into a pattern generated by a light engine with respect to the substrate. SOLUTION: In this configuration, an array of image forming elements for forming the image of a part of the beams formed into a pattern on respective points on the substrate is moved relatively with respect to an array of individually controllable elements for forming beamed into a pattern by giving a pattern. COPYRIGHT: (C)2005,JPO&NCIPI

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