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1. 发明授权

US07606279B1 Thin INP spacer layer in a high speed laser for reduced lateral current spreading 有权
标题翻译：用于降低横向电流扩散的高速激光器中的薄INP间隔层
公开(公告)号：US07606279B1
公开(公告)日：2009-10-20
申请号：US11749033
申请日：2007-05-15
申请人： Ashish K. Verma , Sumesh Mani K. Thiyagarajan , David Bruce Young , Yuk Lung Ha , Roman Dimitrov
发明人： Ashish K. Verma , Sumesh Mani K. Thiyagarajan , David Bruce Young , Yuk Lung Ha , Roman Dimitrov
IPC分类号： H01S5/00
CPC分类号： H01S5/12 , H01S5/028 , H01S5/1231 , H01S5/209 , H01S5/22 , H01S5/32333
摘要： Embodiments disclosed herein relate to high-speed lasers such as FP and DFB lasers. In one embodiment, the high speed laser comprises a substrate, an active region positioned above the substrate, a mesa positioned above the active region, and one or more layers disposed between the active region and the mesa, wherein the thickness of at least one of the one or more layers is implemented to at least partially minimize the distance between the mesa and active region such that lateral current spreading between the mesa and the active region is at least partially minimized.
摘要翻译：本文公开的实施例涉及高速激光器，例如FP和DFB激光器。在一个实施例中，高速激光器包括衬底，位于衬底上方的有源区域，位于有源区域上方的台面以及设置在有源区域和台面之间的一个或多个层，其中至少一个一个或多个层被实现为至少部分地最小化台面和有源区域之间的距离，使得在台面和有源区域之间扩展的横向电流至少部分地被最小化。

2. 发明授权

US08034648B1 Epitaxial regrowth in a distributed feedback laser 有权
标题翻译：分布式反馈激光器中的外延再生长
公开(公告)号：US08034648B1
公开(公告)日：2011-10-11
申请号：US11749007
申请日：2007-05-15
申请人： Yuk Lung Ha , David Bruce Young , Ashish Verma , Roman Dimitrov
发明人： Yuk Lung Ha , David Bruce Young , Ashish Verma , Roman Dimitrov
IPC分类号： H01L21/00 , H01L21/31 , H01L21/469
CPC分类号： H01S5/1231 , B82Y20/00 , G02B6/124 , G02B6/131 , H01S5/028 , H01S5/3086 , H01S5/34306
摘要： Optimizing the regrowth over epitaxial layers during manufacture of a distributed feedback laser. In one example embodiment, a method for depositing an InP regrowth layer on an epitaxial base portion of a distributed feedback laser includes growing a first portion of the regrowth layer at an initial substrate temperature of approximately 580 degrees Celsius to a thickness between approximately 300 Angstroms and approximately 900 Angstroms, increasing the substrate temperature from the initial substrate temperature to an increased substrate temperature of approximately 660 degrees Celsius, growing a second portion of the regrowth layer at the increased substrate temperature, doping a first part of an uppermost layer of the regrowth layer at a concentration of approximately 8.00*10^17/cm3 at the increased substrate temperature, and doping a second part of the uppermost layer of the regrowth layer at a concentration between approximately 1.90*10^18/cm3 and approximately 2.00*10^18/cm3 at the increased substrate temperature.
摘要翻译：在制造分布式反馈激光器期间优化外延层的再生长。在一个示例性实施例中，用于在分布式反馈激光器的外延基底部分上沉积InP再生长层的方法包括：将生长层的第一部分在约580摄氏度的初始衬底温度下生长至约300埃至大约900埃，将衬底温度从初始衬底温度增加到大约660摄氏度的衬底温度，在增加的衬底温度下生长第二部分再生长层，掺杂再生长层的最上层的第一部分在增加的衬底温度下的浓度为约8.00×10 17 / cm 3，并且以约1.90×10 18 / cm 3和约2.00×10 18之间的浓度掺杂再生长层的最上层的第二部分 / cm3。

3. 发明授权

US07553690B2 Starved source diffusion for avalanche photodiode 有权
标题翻译：用于雪崩光电二极管的饥饿源扩散
公开(公告)号：US07553690B2
公开(公告)日：2009-06-30
申请号：US11151929
申请日：2005-06-14
申请人： Daniel Francis , Rashit Nabiev , Richard P. Ratowsky , David Bruce Young , Sunil Thomas , Roman Dimitrov
发明人： Daniel Francis , Rashit Nabiev , Richard P. Ratowsky , David Bruce Young , Sunil Thomas , Roman Dimitrov
IPC分类号： H01L21/00
CPC分类号： H01L31/107 , H01L31/03529 , H01L31/18 , Y02E10/50
摘要： This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an avalanche photodiode includes forming an absorber layer and an avalanche layer over a substrate. Next, a patterned mask defining one or more openings is formed over a surface of the avalanche layer. Finally, a dopant is deposited over the patterned mask and the avalanche layer such that the dopant is blocked by the patterned mask but diffuses into the avalanche layer in areas where the patterned mask defines an opening. The patterned mask is configured such that the depth to which the dopant diffuses into the avalanche layer varies so as to form a sloped diffusion front in the avalanche layer.
摘要翻译：本公开涉及用于形成用于控制边缘效应的雪崩光电二极管的饥饿源扩散方法。在一个示例中，制造雪崩光电二极管的方法包括在衬底上形成吸收层和雪崩层。接下来，在雪崩层的表面上形成限定一个或多个开口的图案化掩模。最后，掺杂剂沉积在图案化掩模和雪崩层上，使得掺杂剂被图案化掩模阻挡，但是在图案化掩模限定开口的区域中扩散到雪崩层中。图案化掩模被配置为使得掺杂剂扩散到雪崩层中的深度变化，以便在雪崩层中形成倾斜的扩散前沿。

4. 发明申请

US20080164571A1 Electronic components produced by a method of separating two layers of material from one another 有权
标题翻译：通过将两层材料彼此分离的方法产生的电子部件
公开(公告)号：US20080164571A1
公开(公告)日：2008-07-10
申请号：US12075599
申请日：2008-03-11
申请人： Michael Kelly , Oliver Ambacher , Martin Stutzmann , Martin Brandt , Roman Dimitrov , Robert Handschuh
发明人： Michael Kelly , Oliver Ambacher , Martin Stutzmann , Martin Brandt , Roman Dimitrov , Robert Handschuh
IPC分类号： H01L29/20
CPC分类号： H01L21/6835 , H01L21/78 , H01L24/81 , H01L2221/68331 , H01L2221/68363 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01049 , H01L2924/0106 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , Y10S438/977 , H01L2924/00
摘要： A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semiconductor body or a region in the vicinity of said interface to electromagnetic radiation through one of the semiconductor body and the growth substrate; decomposing a material at or in proximity to said interface by absorption of the electromagnetic radiation in proximity to or at said interface so that the semiconductor body can be separated from the growth substrate; and connecting the semiconductor body to the support material.
摘要翻译：选自由半导体层，半导体层序列或半导体层结构组成的组的半导体本体。半导体主体通过以下方式从生长衬底转移到支撑材料：通过将半导体本体和生长衬底之一暴露于生长衬底和半导体本体之间的界面或者在所述界面附近的区域暴露于电磁辐射; 通过吸收靠近或在所述界面处的电磁辐射来分解在所述界面处或附近的材料，使得半导体主体可以与生长衬底分离; 并将半导体本体连接到支撑材料上。

5. 发明授权

US07341925B2 Method for transferring a semiconductor body from a growth substrate to a support material 有权
标题翻译：将半导体本体从生长衬底转移到支撑材料的方法
公开(公告)号：US07341925B2
公开(公告)日：2008-03-11
申请号：US11244802
申请日：2005-10-06
申请人： Michael Kelly , Oliver Ambacher , Martin Stutzmann , Martin Brandt , Roman Dimitrov , Robert Handschuh
发明人： Michael Kelly , Oliver Ambacher , Martin Stutzmann , Martin Brandt , Roman Dimitrov , Robert Handschuh
IPC分类号： H01L21/46
CPC分类号： H01L21/6835 , H01L21/78 , H01L24/81 , H01L2221/68331 , H01L2221/68363 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01049 , H01L2924/0106 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.
摘要翻译：一种从半导体层，半导体层序列或半导体层结构中选出的半导体本体从生长衬底转移到支撑材料的方法。生长衬底和半导体本体之间的界面或界面附近的区域通过半导体本体和生长衬底之一暴露于电磁辐射。通过接近或接合处的电磁辐射的吸收来分解在界面处或附近的材料，使得半导体主体可以与生长衬底分离。半导体主体连接到支撑材料。

6. 发明授权

US07763485B1 Laser facet pre-coating etch for controlling leakage current 有权
标题翻译：用于控制漏电流的激光刻面预涂蚀刻
公开(公告)号：US07763485B1
公开(公告)日：2010-07-27
申请号：US11749061
申请日：2007-05-15
申请人： Roman Dimitrov , Ashish Verma , Tsurugi Sudo , Scott Lehmann
发明人： Roman Dimitrov , Ashish Verma , Tsurugi Sudo , Scott Lehmann
IPC分类号： H01L21/00
CPC分类号： H01S5/0201 , B82Y20/00 , H01S5/0202 , H01S5/0282 , H01S5/12 , H01S5/34306
摘要： A method for etching facets of a laser die prior to coating in such a way as to control the formation of oxides and metallic films on the facet is disclosed. In one embodiment, the method includes placing a wafer on which the laser is included in the interior volume of an etching chamber. Nitrogen is introduced into the interior volume to define a nitrogen-rich environment. The laser facet is then etched in the nitrogen-rich environment with argon delivered from an ion gun. In another embodiment, the method includes placing the laser in an ion beam etching chamber, then physically etching the facet of the laser with an ion beam that includes an argon/nitrogen mixture. The laser facet(s) can then be coated as desired. The etching method reduces the incidence of leakage current during operation of the laser die caused by metallic film formation on the facet before coating.
摘要翻译：公开了一种用于在涂覆之前蚀刻激光晶片的面的方法，以便在面上控制氧化物和金属膜的形成。在一个实施例中，该方法包括将其上包括激光的晶片放置在蚀刻室的内部空间中。将氮气引入内部容积以定义富氮环境。然后，在离子枪输送的氩气中，在富氮环境中刻蚀激光刻面。在另一个实施例中，该方法包括将激光放置在离子束蚀刻室中，然后用包括氩/氮混合物的离子束物理蚀刻激光的小面。然后可以根据需要涂覆激光刻面。蚀刻方法减少了在涂覆之前由小面上的金属成膜引起的激光裸片的操作期间的漏电流的发生。

7. 发明申请

US20060081874A1 Starved source diffusion for avalanche photodiode 审中-公开
标题翻译：用于雪崩光电二极管的饥饿源扩散
公开(公告)号：US20060081874A1
公开(公告)日：2006-04-20
申请号：US10966491
申请日：2004-10-15
申请人： Daniel Francis , Rashit Nabiev , Richard Ratowsky , David Young , Sunil Thomas , Roman Dimitrov
发明人： Daniel Francis , Rashit Nabiev , Richard Ratowsky , David Young , Sunil Thomas , Roman Dimitrov
IPC分类号： H01L31/109
CPC分类号： H01L31/107 , H01L31/03529 , H01L31/18 , Y02E10/50
摘要： Starved source diffusion methods for forming avalanche photodiodes (APDs) are provided for controlling the edge effect. The edge effect is controlled by reducing edge gain near the edges of an APD active region. This is accomplished by creating a sloped diffusion front near the edges of the active region. The sloped diffusion front is advantageously formed in a single doping step by using a patterned mask during doping. The patterned mask reduces the depth to which dopants diffuse in areas where it only partly covers the underlying layer. By covering more of the underlying layer nearer the edge and progressively less towards the center, the sloped diffusion front is formed. The shallower diffusion depth near the edge reduces the edge gain, and therefore the edge effect. As a result, an APD to fiber misalignment is less likely, and possibility of edge breakdown is greatly reduced.
摘要翻译：用于形成雪崩光电二极管（APD）的饥饿源扩散方法用于控制边缘效应。边缘效应通过减少APD有效区域边缘附近的边缘增益来控制。这是通过在活动区域的边缘附近创建倾斜的扩散前端来实现的。倾斜的扩散前端有利地通过在掺杂期间使用图案化掩模在单个掺杂步骤中形成。图案化掩模减少掺杂剂在其仅部分覆盖下层的区域中扩散的深度。通过覆盖更靠近边缘的下层，并逐渐向中心倾斜，形成倾斜的扩散前沿。靠近边缘的较浅的扩散深度降低了边缘增益，因此降低了边缘效应。结果，APD对光纤的未对准不太可能，并且边缘击穿的可能性大大降低。

8. 发明授权

US07947941B2 Photodiode having rounded edges for high electrostatic discharge threshold 有权
标题翻译：具有圆形边缘的光电二极管用于高静电放电阈值
公开(公告)号：US07947941B2
公开(公告)日：2011-05-24
申请号：US11932369
申请日：2007-10-31
申请人： Roman Dimitrov
发明人： Roman Dimitrov
IPC分类号： H01L31/00
CPC分类号： H01L23/60 , H01L31/0203 , H01L31/102 , H01L31/105 , H01L31/107 , H01L31/108 , H01L2924/0002 , H01L2924/00
摘要： In one example, an optical detector includes a photosensitive layer, and a group of additional layers associated with that photosensitive layer. The group of additional layers may include first and second contact layer configured for electrical communication with the photosensitive layer. In this example, one of the group of layers is shaped so as to define a corner whose radius of curvature is greater than about 2 microns.
摘要翻译：在一个示例中，光学检测器包括感光层和与该感光层相关联的一组附加层。该组附加层可以包括被配置为与感光层电连通的第一和第二接触层。在该示例中，一组层之一被成形为限定了其曲率半径大于约2微米的角。

9. 发明申请

US20060121683A1 Point source diffusion for avalanche photodiodes 审中-公开
标题翻译：用于雪崩光电二极管的点源扩散
公开(公告)号：US20060121683A1
公开(公告)日：2006-06-08
申请号：US11007558
申请日：2004-12-08
申请人： Daniel Francis , Richard Ratowsky , Ashish Verma , Sunil Thomas , Roman Dimitrov
发明人： Daniel Francis , Richard Ratowsky , Ashish Verma , Sunil Thomas , Roman Dimitrov
IPC分类号： H01L21/20
CPC分类号： H01L31/107 , H01L31/18 , H01L31/1844 , Y02E10/544
摘要： Systems and methods for controlling edge gain in avalanche photodiodes. During fabrication of an avalanche photodiode, the photodiode is diffused with a dopant. The mask used for the dopant includes a plurality of openings such that the dopant diffuses within the photodiode to create a plurality of interconnected spheres. The diffusion front has a shape to introduce an edge effect into the center of the photodiode. The diffusion front ameliorates the edge effect by introducing the edge effect into the center of the photodiode.
摘要翻译：用于控制雪崩光电二极管边缘增益的系统和方法。在制造雪崩光电二极管期间，光电二极管被掺杂剂扩散。用于掺杂剂的掩模包括多个开口，使得掺杂剂在光电二极管内扩散以产生多个互连的球体。扩散前沿具有将边缘效应引入光电二极管的中心的形状。扩散前沿通过将边缘效应引入光电二极管的中心来改善边缘效应。

10. 发明申请

US20060040468A1 Method for transferring a semiconductor body from a growth substrate to a support material 有权
标题翻译：将半导体本体从生长衬底转移到支撑材料的方法
公开(公告)号：US20060040468A1
公开(公告)日：2006-02-23
申请号：US11244802
申请日：2005-10-06
申请人： Michael Kelly , Oliver Ambacher , Martin Stutzmann , Martin Brandt , Roman Dimitrov , Robert Handschuh
发明人： Michael Kelly , Oliver Ambacher , Martin Stutzmann , Martin Brandt , Roman Dimitrov , Robert Handschuh
IPC分类号： H01L21/30 , H01L21/302
CPC分类号： H01L21/6835 , H01L21/78 , H01L24/81 , H01L2221/68331 , H01L2221/68363 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01049 , H01L2924/0106 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.
摘要翻译：一种从半导体层，半导体层序列或半导体层结构中选出的半导体本体从生长衬底转移到支撑材料的方法。生长衬底和半导体本体之间的界面或界面附近的区域通过半导体本体和生长衬底之一暴露于电磁辐射。通过接近或接合处的电磁辐射的吸收来分解在界面处或附近的材料，使得半导体主体可以与生长衬底分离。半导体主体连接到支撑材料。

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