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    • 1. 发明授权
    • Laser facet pre-coating etch for controlling leakage current
    • 用于控制漏电流的激光刻面预涂蚀刻
    • US07763485B1
    • 2010-07-27
    • US11749061
    • 2007-05-15
    • Roman DimitrovAshish VermaTsurugi SudoScott Lehmann
    • Roman DimitrovAshish VermaTsurugi SudoScott Lehmann
    • H01L21/00
    • H01S5/0201B82Y20/00H01S5/0202H01S5/0282H01S5/12H01S5/34306
    • A method for etching facets of a laser die prior to coating in such a way as to control the formation of oxides and metallic films on the facet is disclosed. In one embodiment, the method includes placing a wafer on which the laser is included in the interior volume of an etching chamber. Nitrogen is introduced into the interior volume to define a nitrogen-rich environment. The laser facet is then etched in the nitrogen-rich environment with argon delivered from an ion gun. In another embodiment, the method includes placing the laser in an ion beam etching chamber, then physically etching the facet of the laser with an ion beam that includes an argon/nitrogen mixture. The laser facet(s) can then be coated as desired. The etching method reduces the incidence of leakage current during operation of the laser die caused by metallic film formation on the facet before coating.
    • 公开了一种用于在涂覆之前蚀刻激光晶片的面的方法,以便在面上控制氧化物和金属膜的形成。 在一个实施例中,该方法包括将其上包括激光的晶片放置在蚀刻室的内部空间中。 将氮气引入内部容积以定义富氮环境。 然后,在离子枪输送的氩气中,在富氮环境中刻蚀激光刻面。 在另一个实施例中,该方法包括将激光放置在离子束蚀刻室中,然后用包括氩/氮混合物的离子束物理蚀刻激光的小面。 然后可以根据需要涂覆激光刻面。 蚀刻方法减少了在涂覆之前由小面上的金属成膜引起的激光裸片的操作期间的漏电流的发生。
    • 2. 发明授权
    • Method for applying protective laser facet coatings
    • 施加保护性激光刻面涂层的方法
    • US08277877B1
    • 2012-10-02
    • US11749052
    • 2007-05-15
    • Roman DimitrovAshish VermaTsurugi SudoScott Lehmann
    • Roman DimitrovAshish VermaTsurugi SudoScott Lehmann
    • B05D5/06
    • H01S5/1231H01S5/0287H01S5/0655H01S2301/18
    • A method for depositing protective coatings on front and rear facets of an optical device, such as a laser die, is disclosed. The protective coatings help prevent laser facet damage common to laser dies manufactured using known processes. In one embodiment, the method for coating the laser die includes placing the laser in an evacuated coating chamber before applying a first coating portion to a first facet of the laser. The first coating portion is applied to the first facet so as to form a protective covering thereon, but is applied at a coating energy that minimizes damage to the as-yet uncoated second facet. The laser is then rotated within the coating chamber, and a full coating is applied to a second facet of the laser. The laser is again rotated, and a full coating is applied atop the first coating portion to the first facet of the laser.
    • 公开了一种用于在诸如激光裸片的光学装置的前面和后面上沉积保护涂层的方法。 保护涂层有助于防止使用已知工艺制造的激光模具的激光面损伤。 在一个实施例中,用于涂覆激光管芯的方法包括在将激光器的第一面施加第一涂覆部分之前将激光器放置在抽真空的涂覆室中。 将第一涂层部分施加到第一小面以便在其上形成保护性覆盖物,但以涂覆能量施加,使得对尚未未涂覆的第二面的损伤最小化。 然后将激光器在涂覆室内旋转,并将全涂层施加到激光器的第二面。 激光再次旋转,并且将全涂层施加到第一涂层部分顶部到激光器的第一面。
    • 3. 发明授权
    • Semiconductor laser having low stress passivation layer
    • 具有低应力钝化层的半导体激光器
    • US07567601B1
    • 2009-07-28
    • US11749047
    • 2007-05-15
    • Tsurugi SudoAshish VermaJing ChaiSumesh Mani K. Thiyagarajan
    • Tsurugi SudoAshish VermaJing ChaiSumesh Mani K. Thiyagarajan
    • H01S5/00
    • H01S5/22H01S5/06213H01S5/12H01S5/2214H01S5/2216H01S2301/176
    • A laser diode having a composite passivation layer configured to control parasitic capacitance, especially in high speed laser applications, is disclosed. In one embodiment, a ridge waveguide laser is disclosed and includes: a substrate, an active layer disposed on the substrate, a ridge structure disposed on the active layer, and a contact layer disposed on the ridge structure. A composite passivation layer is disposed substantially laterally to the ridge structure. The composite passivation layer includes a silicon nitride bottom layer, a silicon nitride top layer, and a silicon dioxide middle layer interposed between the bottom and top layers. The passivation layers possess differing stress components that, when combined, cancel out the overall mechanical stress of the passivation layer. This enables relatively thick passivation layers to be employed in high speed laser diodes without increasing the risk of layer stress cracking and laser damage.
    • 公开了一种激光二极管,其具有被配置为控制寄生电容的复合钝化层,特别是在高速激光应用中。 在一个实施例中,公开了一种脊波导激光器,包括:衬底,设置在衬底上的有源层,设置在有源层上的脊结构,以及设置在脊结构上的接触层。 复合钝化层基本上横向设置在脊状结构上。 复合钝化层包括氮化硅底层,氮化硅顶层和介于底层和顶层之间的二氧化硅中间层。 钝化层具有不同的应力分量,当组合时,消除钝化层的整体机械应力。 这使得能够在高速激光二极管中使用相对厚的钝化层,而不增加层应力开裂和激光损伤的风险。
    • 5. 发明授权
    • Epitaxial regrowth in a distributed feedback laser
    • 分布式反馈激光器中的外延再生长
    • US08034648B1
    • 2011-10-11
    • US11749007
    • 2007-05-15
    • Yuk Lung HaDavid Bruce YoungAshish VermaRoman Dimitrov
    • Yuk Lung HaDavid Bruce YoungAshish VermaRoman Dimitrov
    • H01L21/00H01L21/31H01L21/469
    • H01S5/1231B82Y20/00G02B6/124G02B6/131H01S5/028H01S5/3086H01S5/34306
    • Optimizing the regrowth over epitaxial layers during manufacture of a distributed feedback laser. In one example embodiment, a method for depositing an InP regrowth layer on an epitaxial base portion of a distributed feedback laser includes growing a first portion of the regrowth layer at an initial substrate temperature of approximately 580 degrees Celsius to a thickness between approximately 300 Angstroms and approximately 900 Angstroms, increasing the substrate temperature from the initial substrate temperature to an increased substrate temperature of approximately 660 degrees Celsius, growing a second portion of the regrowth layer at the increased substrate temperature, doping a first part of an uppermost layer of the regrowth layer at a concentration of approximately 8.00*10^17/cm3 at the increased substrate temperature, and doping a second part of the uppermost layer of the regrowth layer at a concentration between approximately 1.90*10^18/cm3 and approximately 2.00*10^18/cm3 at the increased substrate temperature.
    • 在制造分布式反馈激光器期间优化外延层的再生长。 在一个示例性实施例中,用于在分布式反馈激光器的外延基底部分上沉积InP再生长层的方法包括:将生长层的第一部分在约580摄氏度的初始衬底温度下生长至约300埃至 大约900埃,将衬底温度从初始衬底温度增加到大约660摄氏度的衬底温度,在增加的衬底温度下生长第二部分再生长层,掺杂再生长层的最上层的第一部分 在增加的衬底温度下的浓度为约8.00×10 17 / cm 3,并且以约1.90×10 18 / cm 3和约2.00×10 18之间的浓度掺杂再生长层的最上层的第二部分 / cm3。
    • 8. 发明授权
    • Cross-lingual audio search
    • 跨语言音频搜索
    • US08805871B2
    • 2014-08-12
    • US13598296
    • 2012-08-29
    • Jitendra AjmeraAshish Verma
    • Jitendra AjmeraAshish Verma
    • G06F17/30
    • G06F17/30755G10L15/26
    • Methods and arrangements for executing an audio search. A search query in a first language variety is accepted, the search query being in a form of at least one of: text and audio. A corpus of material in the first language variety is accessed, and first language variety baseforms are obtained via data obtained from a second language variety. A first language variety phonetic model is built, and the first language variety phonetic model and the second language variety are employed in executing an audio search based on the accepted search query.
    • 执行音频搜索的方法和安排。 接受第一种语言种类的搜索查询,搜索查询是至少一种:文本和音频的形式。 访问第一语言种类的材料语料库,并且通过从第二语言品种获得的数据获得第一语言种类基础。 构建了第一种语言种类的语音模型,并且基于所接受的搜索查询,采用第一种语言种类语音模型和第二种语言种类来执行音频搜索。