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1. 发明授权

US07553690B2 Starved source diffusion for avalanche photodiode 有权
标题翻译：用于雪崩光电二极管的饥饿源扩散
公开(公告)号：US07553690B2
公开(公告)日：2009-06-30
申请号：US11151929
申请日：2005-06-14
申请人： Daniel Francis , Rashit Nabiev , Richard P. Ratowsky , David Bruce Young , Sunil Thomas , Roman Dimitrov
发明人： Daniel Francis , Rashit Nabiev , Richard P. Ratowsky , David Bruce Young , Sunil Thomas , Roman Dimitrov
IPC分类号： H01L21/00
CPC分类号： H01L31/107 , H01L31/03529 , H01L31/18 , Y02E10/50
摘要： This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an avalanche photodiode includes forming an absorber layer and an avalanche layer over a substrate. Next, a patterned mask defining one or more openings is formed over a surface of the avalanche layer. Finally, a dopant is deposited over the patterned mask and the avalanche layer such that the dopant is blocked by the patterned mask but diffuses into the avalanche layer in areas where the patterned mask defines an opening. The patterned mask is configured such that the depth to which the dopant diffuses into the avalanche layer varies so as to form a sloped diffusion front in the avalanche layer.
摘要翻译：本公开涉及用于形成用于控制边缘效应的雪崩光电二极管的饥饿源扩散方法。在一个示例中，制造雪崩光电二极管的方法包括在衬底上形成吸收层和雪崩层。接下来，在雪崩层的表面上形成限定一个或多个开口的图案化掩模。最后，掺杂剂沉积在图案化掩模和雪崩层上，使得掺杂剂被图案化掩模阻挡，但是在图案化掩模限定开口的区域中扩散到雪崩层中。图案化掩模被配置为使得掺杂剂扩散到雪崩层中的深度变化，以便在雪崩层中形成倾斜的扩散前沿。

2. 发明申请

US20060081874A1 Starved source diffusion for avalanche photodiode 审中-公开
标题翻译：用于雪崩光电二极管的饥饿源扩散
公开(公告)号：US20060081874A1
公开(公告)日：2006-04-20
申请号：US10966491
申请日：2004-10-15
申请人： Daniel Francis , Rashit Nabiev , Richard Ratowsky , David Young , Sunil Thomas , Roman Dimitrov
发明人： Daniel Francis , Rashit Nabiev , Richard Ratowsky , David Young , Sunil Thomas , Roman Dimitrov
IPC分类号： H01L31/109
CPC分类号： H01L31/107 , H01L31/03529 , H01L31/18 , Y02E10/50
摘要： Starved source diffusion methods for forming avalanche photodiodes (APDs) are provided for controlling the edge effect. The edge effect is controlled by reducing edge gain near the edges of an APD active region. This is accomplished by creating a sloped diffusion front near the edges of the active region. The sloped diffusion front is advantageously formed in a single doping step by using a patterned mask during doping. The patterned mask reduces the depth to which dopants diffuse in areas where it only partly covers the underlying layer. By covering more of the underlying layer nearer the edge and progressively less towards the center, the sloped diffusion front is formed. The shallower diffusion depth near the edge reduces the edge gain, and therefore the edge effect. As a result, an APD to fiber misalignment is less likely, and possibility of edge breakdown is greatly reduced.
摘要翻译：用于形成雪崩光电二极管（APD）的饥饿源扩散方法用于控制边缘效应。边缘效应通过减少APD有效区域边缘附近的边缘增益来控制。这是通过在活动区域的边缘附近创建倾斜的扩散前端来实现的。倾斜的扩散前端有利地通过在掺杂期间使用图案化掩模在单个掺杂步骤中形成。图案化掩模减少掺杂剂在其仅部分覆盖下层的区域中扩散的深度。通过覆盖更靠近边缘的下层，并逐渐向中心倾斜，形成倾斜的扩散前沿。靠近边缘的较浅的扩散深度降低了边缘增益，因此降低了边缘效应。结果，APD对光纤的未对准不太可能，并且边缘击穿的可能性大大降低。

3. 发明申请

US20060084187A1 Starved source diffusion for avalanche photodiode 有权
公开(公告)号：US20060084187A1
公开(公告)日：2006-04-20
申请号：US11151929
申请日：2005-06-14
申请人： Daniel Francis , Rashit Nabiev , Richard Ratowsky , David Young , Sunil Thomas , Roman Dimitrov
发明人： Daniel Francis , Rashit Nabiev , Richard Ratowsky , David Young , Sunil Thomas , Roman Dimitrov
IPC分类号： H01L21/00
CPC分类号： H01L31/107 , H01L31/03529 , H01L31/18 , Y02E10/50
摘要： This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an avalanche photodiode includes forming an absorber layer and an avalanche layer over a substrate. Next, a patterned mask defining one or more openings is formed over a surface of the avalanche layer. Finally, a dopant is deposited over the patterned mask and the avalanche layer such that the dopant is blocked by the patterned mask but diffuses into the avalanche layer in areas where the patterned mask defines an opening. The patterned mask is configured such that the depth to which the dopant diffuses into the avalanche layer varies so as to form a sloped diffusion front in the avalanche layer.

4. 发明授权

US06760357B1 Vertical cavity apparatus with tunnel junction 有权
标题翻译：具有隧道结的立式腔体装置
公开(公告)号：US06760357B1
公开(公告)日：2004-07-06
申请号：US09603227
申请日：2000-06-23
申请人： Julien Boucart , Constance Chang-Hasnain , Michael Jansen , Rashit Nabiev , Wupen Yuen
发明人： Julien Boucart , Constance Chang-Hasnain , Michael Jansen , Rashit Nabiev , Wupen Yuen
IPC分类号： H01S5183
CPC分类号： H01S5/426 , H01L33/105 , H01S5/026 , H01S5/1021 , H01S5/146 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18366 , H01S5/18397 , H01S5/2063 , H01S5/3095 , H01S5/3201 , H01S5/4018 , H01S5/4087 , H01S5/423
摘要： A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a fiber with a grating. At least a first tunnel junction is positioned between the first and second mirrors.
摘要翻译：垂直空腔装置包括第一和第二反射镜，基底和位于第一和第二反射镜之间的至少第一和第二有源区。第一和第二反射镜中的至少一个是具有光栅的光纤。至少第一隧道结位于第一和第二反射镜之间。

5. 发明授权

US5539759A Single mode laser with a passive antiguide region 失效
标题翻译：单模激光器具有被动反射区域
公开(公告)号：US5539759A
公开(公告)日：1996-07-23
申请号：US317393
申请日：1994-10-04
申请人： Constance J. Chang-Hasnain , Yongan Wu , Rashit Nabiev
发明人： Constance J. Chang-Hasnain , Yongan Wu , Rashit Nabiev
IPC分类号： H01S5/02 , H01S5/183 , H01S5/20 , H01S3/098
CPC分类号： H01S5/18355 , H01S2301/166 , H01S2301/18 , H01S5/0215 , H01S5/18352 , H01S5/205 , H01S5/222
摘要： A single mode laser with a laser cavity consisting of an active medium and a first and second reflectors with an antiguide region or layer having a high refractive index positioned adjacent to the laser cavity to bleed off higher order lasing modes and preventing them from attaining the lasing condition. Specifically, light belonging to higher order modes leaks or bleeds into the antiguide region from the laser medium and from the first and second reflectors. When spacers for selecting the desired wavelength of laser light are provided, the light travelling through them leaks into the antiguide layer as well.Optimization of the bleeding of higher order modes into the passive antiguide region can be achieved by adjusting a taper angle of the laser cavity. Furthermore, by adjusting the ratio of the equivalent refractive index of the laser cavity and the passive antiguide region single mode operation at high current levels can be realized for apertures as large as 30 .mu.m. In addition, such lasers exhibit a repeatable and predetermined direction of polarization, most commonly along the [011] crystal orientation of the laser medium.
摘要翻译：具有由活性介质和第一和第二反射器组成的激光腔的单模激光器，具有邻近激光腔定位的具有高折射率的防反射区域或层，以排出高阶激光模式并防止其达到激光条件。具体地说，属于高阶模式的光从激光介质和第一反射器和第二反射器泄漏或流入反射区域。当设置用于选择所需波长的激光的间隔物时，穿过它们的光也泄漏到防水层中。可以通过调整激光腔的锥角来实现高阶模式渗透到被动反射区域中的出血优化。此外，通过调整激光腔的等效折射率与被动防止区域单模操作在高电流水平下的比率可以实现为大至30μm的孔。此外，这种激光器表现出可重复和预定的偏振方向，最常见的是沿着激光介质的[011]晶体取向。

6. 发明授权

US08406266B2 Three-terminal vertical cavity surface emitting laser (VCSEL) and a method for operating a three-terminal VCSEL 有权
标题翻译：三端子垂直腔面发射激光器（VCSEL）和一种三端子VCSEL的操作方法
公开(公告)号：US08406266B2
公开(公告)日：2013-03-26
申请号：US13223300
申请日：2011-08-31
申请人： Chung-Yi Su , Rashit Nabiev , Ramana M. V. Murty
发明人： Chung-Yi Su , Rashit Nabiev , Ramana M. V. Murty
IPC分类号： H01S5/00
CPC分类号： H01S5/06203 , H01S5/06226 , H01S5/18302 , H01S5/18341
摘要： A three-terminal VCSEL is provided that has a reduced fall time that allows the VCSEL to be operated at higher speeds. Methods of operating the three-terminal VCSEL are also provided. The VCSEL can be operated at higher speeds without decreasing the optical output of the VCSEL when it is in the logical HIGH state.
摘要翻译：提供三端VCSEL，其具有减少的下降时间，允许VCSEL以更高的速度运行。还提供了操作三端VCSEL的方法。当VCSEL处于逻辑高电平状态时，VCSEL可以以更高的速度运行，而不会降低VCSEL的光输出。

7. 发明授权

US06493373B1 Vertical cavity apparatus with tunnel junction 有权
标题翻译：具有隧道结的立式腔体装置
公开(公告)号：US06493373B1
公开(公告)日：2002-12-10
申请号：US09603242
申请日：2000-06-23
申请人： Julien Boucart , Constance Chang-Hasnain , Michael Jansen , Rashit Nabiev , Wupen Yuen
发明人： Julien Boucart , Constance Chang-Hasnain , Michael Jansen , Rashit Nabiev , Wupen Yuen
IPC分类号： H01S5183
CPC分类号： H01S5/426 , H01L33/105 , H01S5/026 , H01S5/0614 , H01S5/1021 , H01S5/146 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/18366 , H01S5/18372 , H01S5/18397 , H01S5/2063 , H01S5/3095 , H01S5/3201 , H01S5/4018 , H01S5/4087 , H01S5/423
摘要： A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a fused mirror. At least a first tunnel junction is positioned between the first and second mirrors.
摘要翻译：垂直空腔装置包括第一和第二反射镜，基底和位于第一和第二反射镜之间的至少第一和第二有源区。第一和第二反射镜中的至少一个是熔光镜。至少第一隧道结位于第一和第二反射镜之间。

8. 发明授权

US06487231B1 Vertical cavity apparatus with tunnel junction 有权
标题翻译：具有隧道结的立式腔体装置
公开(公告)号：US06487231B1
公开(公告)日：2002-11-26
申请号：US09603239
申请日：2000-06-23
申请人： Julien Boucart , Constance Chang-Hasnain , Michael Jansen , Rashit Nabiev , Wupen Yuen
发明人： Julien Boucart , Constance Chang-Hasnain , Michael Jansen , Rashit Nabiev , Wupen Yuen
IPC分类号： H01S5183
CPC分类号： H01S5/426 , H01L33/105 , H01S5/026 , H01S5/0614 , H01S5/1021 , H01S5/146 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/18366 , H01S5/18372 , H01S5/18397 , H01S5/2063 , H01S5/3095 , H01S5/3201 , H01S5/4018 , H01S5/4087 , H01S5/423
摘要： A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a dielectric mirror. At least a first tunnel junction is positioned between the first and second mirrors.
摘要翻译：垂直空腔装置包括第一和第二反射镜，基底和位于第一和第二反射镜之间的至少第一和第二有源区。第一和第二反射镜中的至少一个是电介质镜。至少第一隧道结位于第一和第二反射镜之间。

9. 发明授权

US06487230B1 Vertical cavity apparatus with tunnel junction 有权
标题翻译：具有隧道结的立式腔体装置
公开(公告)号：US06487230B1
公开(公告)日：2002-11-26
申请号：US09603140
申请日：2000-06-23
申请人： Julien Boucart , Constance Chang-Hasnain , Michael Jansen , Rashit Nabiev , Wupen Yuen
发明人： Julien Boucart , Constance Chang-Hasnain , Michael Jansen , Rashit Nabiev , Wupen Yuen
IPC分类号： H01S5183
CPC分类号： H01S5/426 , H01L33/105 , H01S5/026 , H01S5/0614 , H01S5/1021 , H01S5/146 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/18366 , H01S5/18372 , H01S5/18397 , H01S5/2063 , H01S5/3095 , H01S5/3201 , H01S5/4018 , H01S5/4087 , H01S5/423
摘要： A vertical cavity apparatus includes a first mirror, a substrate and a second mirror coupled to the substrate. At least a first and a second active region are each positioned between the first and second mirrors. At least a first ion implantation layer is positioned between the first and second mirrors. At least a first tunnel junction is positioned between the first and second mirrors.
摘要翻译：垂直空腔装置包括第一反射镜，基板和耦合到基板的第二反射镜。至少第一和第二有源区域各自位于第一和第二反射镜之间。至少第一离子注入层位于第一和第二反射镜之间。至少第一隧道结位于第一和第二反射镜之间。

10. 发明申请

US20130051420A1 THREE-TERMINAL VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) AND A METHOD FOR OPERATING A THREE-TERMINAL VCSEL 有权
标题翻译：三端垂直孔表面发射激光（VCSEL）和一种三端VCSEL的工作方法
公开(公告)号：US20130051420A1
公开(公告)日：2013-02-28
申请号：US13223300
申请日：2011-08-31
申请人： Chung-Yi Su , Rashit Nabiev , Ramana M. V. Murty
发明人： Chung-Yi Su , Rashit Nabiev , Ramana M. V. Murty
IPC分类号： H01S5/183
CPC分类号： H01S5/06203 , H01S5/06226 , H01S5/18302 , H01S5/18341
摘要： A three-terminal VCSEL is provided that has a reduced fall time that allows the VCSEL to be operated at higher speeds. Methods of operating the three-terminal VCSEL are also provided. The VCSEL can be operated at higher speeds without decreasing the optical output of the VCSEL when it is in the logical HIGH state.
摘要翻译：提供三端VCSEL，其具有减少的下降时间，允许VCSEL以更高的速度运行。还提供了操作三端VCSEL的方法。当VCSEL处于逻辑高电平状态时，VCSEL可以以更高的速度运行，而不会降低VCSEL的光输出。

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