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1. 发明专利

JP2013010130A Liquid supply system 审中-公开
标题翻译：液体供应系统
公开(公告)号：JP2013010130A
公开(公告)日：2013-01-17
申请号：JP2011145573
申请日：2011-06-30
申请人： Kinotech Solar Energy Corp , 株式会社キノテック・ソーラーエナジー , Asahi Glass Co Ltd , 旭硝子株式会社
发明人： SAKAKI DAISUKE , TAKEUCHI YOSHINORI , UEMORI SHIGEKI , NAKAHARA KATSUMASA
IPC分类号： B22D39/02 , B22D41/50 , B22D41/54 , B22D45/00
摘要： PROBLEM TO BE SOLVED: To provide a liquid supply system with a simple and compact configuration which can stably supply liquid of high temperature such as molten metal or molten salt with high corrosiveness, at comparatively small amount of a constant flow rate, without commingling of impurity and generation of blockage due to the impurity.SOLUTION: The liquid supply system includes: an impurity commingling preventing tube 14 which extends above from the upper end of a molten liquid drain pipe 12, covering the lateral circumference of the molten liquid drain pipe which can freely flow out molten liquid M accommodated in a liquid reservoir 10 below the liquid reservoir, and has a through-hole 14a that can freely introduce the molten liquid accommodated in the liquid reservoir to the molten liquid drain pipe side; and a weight 30 which can freely descend to be dipped inside the molten liquid accommodated in the liquid reservoir. The position of the upper edge of the through-hole is set lower than the lower limit of a liquid face of the molten liquid accommodated in the liquid reservoir. A variation of dipping volume of the weight, per unit time, which is dipped in, descending with respect to the molten liquid accommodated in the liquid reservoir, is constantly set, and the molten liquid accommodated in the liquid reservoir can freely flow out from the molten liquid drain pipe at a flow rate in accordance with the variation of the dipping volume.
摘要翻译：要解决的问题：为了提供一种简单紧凑的构造，其可以以相对较少量的恒定流速稳定地供应具有高腐蚀性的熔融金属或熔盐的高温液体，而没有杂质杂质和杂质产生堵塞。解决方案：液体供应系统包括：杂质混合防止管14，其从熔融液体排放管12的上端向上延伸，覆盖熔融液体排出管的横向外周，该侧壁可自由流出熔融液体M 容纳在液体储存器下面的液体储存器10中，并且具有可以将容纳在液体储存器中的熔融液体自由地引入到熔融液体排出管侧的通孔14a; 以及能够自由下落以浸入容纳在液体储存器中的熔融液体内的重物30。通孔的上边缘的位置被设定为低于容纳在液体储存器中的熔融液体的液面的下限。相对于容纳在液体储存器中的熔融液体浸入，下降的每单位时间的重量的浸渍体积的变化不断地变化，容纳在液体储存器中的熔融液体可以自由地从熔融液体排出管，其流量根据浸渍体积的变化而变化。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012132522A High-temperature valve device 审中-公开
标题翻译：高温阀装置
公开(公告)号：JP2012132522A
公开(公告)日：2012-07-12
申请号：JP2010286131
申请日：2010-12-22
申请人： Asahi Glass Co Ltd , Kinotech Solar Energy Corp , 旭硝子株式会社 , 株式会社キノテック・ソーラーエナジー
发明人： NAKAHARA KATSUMASA , KONDO MASAFUMI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： F16K49/00 , C01B33/033 , F16K1/22 , F16K1/226
CPC分类号： F16K49/002 , C01B33/033 , F16K1/221 , F16K49/005
摘要： PROBLEM TO BE SOLVED: To provide a high-temperature valve device of a simple configuration, which can exhibit high corrosion resistance, and can mechanically separate a reaction by-product and a material for reaction when producing silicon while maintaining them in a gas state completely different from the phase state of solid silicon.SOLUTION: A high-temperature valve device 40, 140, which can be positioned under a reactor 10 for generating silicon, is provided with: a first tube-shaped member connected to the interior space of the reactor, and capable of introducing silicon generated in the reactor; a valve positioned in the first tube-shaped member; and a heater 100 capable of heating a heating region including the valve and part of the first tube-shaped member from the reactor to the valve to a temperature greater than or equal to the boiling point of the related substances pertaining to the generation of silicon in the reactor.
摘要翻译：要解决的问题：提供一种简单结构的高温阀装置，其可以表现出高耐腐蚀性，并且在制造硅时可以机械分离反应副产物和反应材料，同时将它们保持在气体状态完全不同于固体硅的相态。解决方案：可以位于用于产生硅的反应器10下方的高温阀装置40,140设置有：连接到反应器的内部空间并能够引入的第一管状构件在反应器中产生的硅; 定位在第一管状构件中的阀; 以及加热器100，其能够将包括所述阀和所述第一管状部件的一部分的加热区域从所述反应器加热到所述阀，所述加热区域的温度大于或等于与所述硅的产生有关的相关物质的沸点反应堆。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2014040330A Apparatus and method for producing silicon 审中-公开
标题翻译：用于生产硅的装置和方法
公开(公告)号：JP2014040330A
公开(公告)日：2014-03-06
申请号：JP2010286130
申请日：2010-12-22
申请人： Asahi Glass Co Ltd , 旭硝子株式会社 , Kinotech Solar Energy Corp , 株式会社キノテック・ソーラーエナジー
发明人： NAKAHARA KATSUMASA , KONDO MASAFUMI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： C01B33/033
CPC分类号： C01B33/033
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing silicon, each of which has such expandability that polycrystalline silicon can be produced at a low cost in high yield and can also be recovered continuously and efficiently while restraining a material of a member having a silicon deposition surface from being mixed therein.SOLUTION: While keeping the temperature of a portion of a reactor 10 within a silicon deposition temperature range by a heater 22, silicon tetrachloride gas is supplied into the reactor through a silicon tetrachloride gas supply port 16a and zinc gas is supplied into the reactor through a zinc gas supply port 18a so that the supplied silicon tetrachloride is reduced by the supplied zinc in the reactor and a silicon deposition zone S, where silicon is deposited, is formed on the wall part corresponding to the portion, the temperature of which is kept within the silicon deposition temperature range, of the reactor. After that, a bar member 24b of a peeling mechanism 24 is moved while being abutted on the silicon deposited in the silicon deposition zone to peel off the silicon deposited in the silicon deposition zone.
摘要翻译：要解决的问题：提供一种硅的制造方法和制造方法，其具有这样的可扩展性，可以高成本地以低成本制造多晶硅，并且还可以在抑制构件的材料的同时连续有效地回收具有硅沉积表面的混合物。解决方案：通过加热器22将反应器10的一部分温度保持在硅沉积温度范围内，四氯化碳气体通过四氯化硅气体供应口16a 通过锌气供给口18a将锌气体供给到反应器中，使得供给的四氯化硅通过反应器中供给的锌而被还原，并且在对应于其的壁部分上形成沉积硅的硅沉积区域S 其温度保持在硅淀积温度范围内的部分。之后，剥离机构24的杆件24b在沉积在硅沉积区中的硅上被移动，以剥离沉积在硅沉积区中的硅。

4. 发明专利

JP2009234831A Silicon production apparatus 审中-公开
标题翻译：硅生产设备
公开(公告)号：JP2009234831A
公开(公告)日：2009-10-15
申请号：JP2008081064
申请日：2008-03-26
申请人： Kinotech Solar Energy Corp , 株式会社キノテック・ソーラーエナジー
发明人： ANSAKI MASAAKI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： C01B33/033
摘要： PROBLEM TO BE SOLVED: To provide a silicon production apparatus in which silicon deposition on a wall surface of a reactor, etc., is avoided and the amount of silicon which is discharged with gas discharged from the reactor and is not recovered and the loss of unreacted raw material gas are minimized, and which can continuously mass-produce solid silicon of constant quality and constant form.
SOLUTION: The silicon production apparatus includes a first reactor 1 and a second reactor 2 connected to the first reactor on a downstream side of the first reactor. In the first reactor, a silicon compound is reduced with zinc to form solid silicon. In the second reactor, while using solid silicon of relatively small crystal size in the solid silicon formed in the first reactor as seed crystals, a silicon compound is reduced with zinc to form solid silicon.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种硅制备装置，其中避免了在反应器的壁表面上的硅沉积以及从反应器排出并且没有回收的气体排出的硅的量，以及未反应的原料气体的损失最小化，可连续批量生产恒定质量和恒定形式的固体硅。解决方案：硅制造装置包括在第一反应器的下游侧连接到第一反应器的第一反应器1和第二反应器2。在第一反应器中，用锌还原硅化合物以形成固体硅。在第二反应器中，当在第一反应器中形成的固体硅中使用晶体尺寸较小的固态硅作为晶种时，用锌还原硅化合物以形成固态硅。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009107877A Silicon production device 审中-公开
标题翻译：硅生产设备
公开(公告)号：JP2009107877A
公开(公告)日：2009-05-21
申请号：JP2007281416
申请日：2007-10-30
申请人： Covalent Materials Corp , Kinotech Solar Energy Corp , コバレントマテリアル株式会社 , 株式会社キノテック・ソーラーエナジー
发明人： OHASHI TADASHI , MATSUMURA TAKASHI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： C01B33/033
摘要： PROBLEM TO BE SOLVED: To provide a silicon production device where the whole can be simplified, maintenance is excellent, and silicon can be inexpensively produced.
SOLUTION: The polysilicon production device includes: a reaction tube 10; a heating furnace 20 heating the reaction tube 10; a zinc feed tube 30 feeding zinc into the reaction tube 10; a zinc charge part 40 charging the inside of the zinc feed tube 10 with zinc; a silicon compound feed tube 50 feeding a silicon compound into the reaction tube 10. The zinc feed tube 30 includes a zinc discharge port 30a discharging the inside of the reaction tube 10 with zinc; and a heating part 30b provided between the zinc discharge port 30a and the zinc charge part 40 and heating zinc charged from the zinc charge part 40. The zinc discharge port 30a and the heating part 30b are provided inside the reaction tube 10 and also are provided within a heating region α heated by the heating furnace 20.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以简化整体的硅生产装置，维护是优异的，并且可以廉价地生产硅。多晶硅制造装置包括：反应管10; 加热炉20，加热反应管10; 锌进料管30，其将锌进料到反应管10中; 将锌进料管10的内部用锌充电的锌充电部40; 将硅化合物进料到反应管10中的硅化合物进料管50.锌进料管30包括用锌排出反应管10内部的锌排出口30a; 以及设置在锌排出口30a和锌充电部40之间并且从锌充电部40充电的锌的加热部30b。锌排出口30a和加热部30b设置在反应管10的内部，并且还设置在由加热炉20加热的加热区域α内。（C）2009年，JPO＆INPIT

6. 发明专利

JP2009242153A Method of producing silicon 审中-公开
标题翻译：生产硅的方法
公开(公告)号：JP2009242153A
公开(公告)日：2009-10-22
申请号：JP2008089490
申请日：2008-03-31
申请人： Kinotech Solar Energy Corp , 株式会社キノテック・ソーラーエナジー
发明人： ANSAKI MASAAKI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： C01B33/033 , C25C1/16
CPC分类号： Y02P10/234
摘要： PROBLEM TO BE SOLVED: To provide a method of producing silicon by a zinc reduction method which is can recover and recycling zinc from by-product zinc chloride by a safe method simple in the operation or the maintenance. SOLUTION: The method of manufacturing silicon includes: a reduction step S1 of obtaining silicon and zinc chloride gas by bringing silicon tetrachloride gas into contact with zinc; zinc extraction steps S2, S2' of extracting a zinc component into an organic solvent phase by bringing a zinc chloride solution into contact with an organic solvent containing an acidic extracting agent and immiscible with an aqueous solution after the zinc chloride gas produced in the reducing step is recovered as the zinc chloride aqueous solution; a zinc back extraction step S3 of obtaining a zinc sulfate aqueous solution by back-extracting the organic solvent containing the zinc component obtained in the zinc extraction step with diluted sulfuric acid; and an electrolysis step S4 of electrolyzing the zinc sulfate aqueous solution obtained in the zinc back extraction step to obtain zinc. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过锌还原法生产硅的方法，其可以通过操作或维护简单的安全方法从副产物氯化锌中回收和再循环锌。解决方案：制造硅的方法包括：通过使四氯化硅气体与锌接触来获得硅和氯化锌气体的还原步骤S1; 通过在还原步骤中产生的氯化锌气体之后使氯化锌溶液与含有酸性萃取剂的有机溶剂接触，并与水溶液不混溶，将锌组分萃取到有机溶剂相中的锌萃取步骤S2，S2' 作为氯化锌水溶液回收; 锌回萃取步骤S3，通过用稀硫酸反萃取在锌萃取步骤中得到的含有锌成分的有机溶剂，得到硫酸锌水溶液; 以及电解步骤S4，对在锌回萃取步骤中得到的硫酸锌水溶液进行电解，得到锌。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009108365A Electrolysis apparatus 审中-公开
标题翻译：电解器
公开(公告)号：JP2009108365A
公开(公告)日：2009-05-21
申请号：JP2007281224
申请日：2007-10-30
申请人： Covalent Materials Corp , Kinotech Solar Energy Corp , コバレントマテリアル株式会社 , 株式会社キノテック・ソーラーエナジー
发明人： OHASHI TADASHI , MATSUMURA TAKASHI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： C25C7/06 , C25C3/34
CPC分类号： C25C7/005 , C25C3/34 , C25C7/06
摘要： PROBLEM TO BE SOLVED: To provide an electrolysis apparatus which can reduce an amount of the evaporation of an electrolytic solution without lowering a temperature of the electrolytic solution and can thereby prevent troubles such as clogging in an exhaust pipe.
SOLUTION: The electrolysis apparatus 1 includes: an electrolytic tank 10 in which an electrolytic solution 70 is charged; a heating section 20 provided around the electrolytic tank 10; an electrode portion 30 for electrolyzing the electrolytic solution 70; a lid 45 which is arranged at the upper part of the electrolytic tank 10 and forms a spatial region 40 above the electrolytic solution 10; a discharging portion 50 which is arranged on the lid 45 and discharges a by-product gas produced due to the electrolysis of the electrolytic solution 70 from the spatial region 40 to the outside; and an evaporation control member 60 which is arranged so as to float on the electrolytic solution 70 and cover the surface of the electrolytic solution 70 to inhibit the evaporation of the electrolytic solution 70.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种电解装置，其可以在不降低电解液温度的情况下减少电解液的蒸发量，从而可以防止排气管堵塞等问题。解决方案：电解装置1包括：电解槽10，其中电解溶液70被充电; 设置在电解槽10周围的加热部20; 用于电解电解液70的电极部分30; 盖45，布置在电解槽10的上部并形成电解液10上方的空间区域40; 排出部分50，布置在盖子45上，并将由于电解液70的电解产生的副产物从空间区域40排放到外部; 以及蒸发控制构件60，其布置成浮在电解溶液70上并覆盖电解溶液70的表面以阻止电解溶液70的蒸发。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009102190A Silicon manufacturing apparatus 审中-公开
标题翻译：硅制造设备
公开(公告)号：JP2009102190A
公开(公告)日：2009-05-14
申请号：JP2007274831
申请日：2007-10-23
申请人： Covalent Materials Corp , Kinotech Solar Energy Corp , コバレントマテリアル株式会社 , 株式会社キノテック・ソーラーエナジー
发明人： OHASHI TADASHI , MATSUMURA TAKASHI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： C01B33/033
摘要： PROBLEM TO BE SOLVED: To provide a silicon manufacturing apparatus capable of simplifying the whole apparatus and manufacturing silicon at a low cost. SOLUTION: The silicon manufacturing apparatus includes a reaction tube 10, a heating furnace 20 for heating the reaction tube 10, a zinc supply pipe 30 for supplying zinc to the reaction tube 10, a zinc charging part 40 for charging zinc into the zinc supply pipe 30, and a silicon compound supply pipe 50 for supplying a silicon compound into the reaction tube 10, wherein a connection part 30b of the zinc supply pipe 30 and a heating part 30a are provided in a heating region (α) of the heating furnace 20. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够以低成本简化整个装置并制造硅的硅制造装置。解决方案：硅制造装置包括反应管10，用于加热反应管10的加热炉20，用于向反应管10供给锌的锌供给管30，将锌充入到锌的充电部40 锌供给管30和用于将硅化合物供给到反应管10中的硅化合物供给管50，其中锌供给管30的连接部30b和加热部30a设置在加热区域（α）加热炉20.版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2009167022A Apparatus for producing silicon 审中-公开
标题翻译：生产硅胶的设备
公开(公告)号：JP2009167022A
公开(公告)日：2009-07-30
申请号：JP2008003845
申请日：2008-01-11
申请人： Covalent Materials Corp , Kinotech Solar Energy Corp , コバレントマテリアル株式会社 , 株式会社キノテック・ソーラーエナジー
发明人： TAKEUCHI YOSHINORI , SAKAKI DAISUKE , OHASHI TADASHI , MATSUMURA TAKASHI
IPC分类号： C01B33/033
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for producing silicon capable of improving the efficiency of a reduction reaction so as to improve the yield of silicon and improving the separation recovery efficiency of the produced silicon and the produced gas as well, without causing complication in equipment configurations. SOLUTION: The apparatus for producing silicon is equipped with a zinc feed pipe which communicates a silicon compound gas to a reaction vessel 10 and supplies zinc gas from a first zinc supply port 40a into the reaction vessel in ejecting to a second ejecting direction, a flow straightening member 20 which is installed in the reaction vessel and allows the silicon compound gas ejected from a silicon compound supply port in the first ejecting direction to flow from the upstream side to the downstream side in the reaction vessel while the zinc gas ejected from the first zinc supply port to the second zinc supply port is deviated, and a discharge pipe 10b which is installed at the downstream side of the flow straightening member in the reaction vessel and discharges a reaction product gas containing silicon outside the reaction vessel. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种能够提高还原反应效率的硅的制造装置，以提高硅的产率，并提高生产的硅和所生产的气体的分离回收效率，而没有导致设备配置复杂化。解决方案：用于生产硅的装置配备有锌给料管，其将硅化合物气体连通到反应容器10，并将锌气从第一锌供给口40a供应到反应容器中，以排出到第二排出方向安装在反应容器中的流动矫直构件20，并且允许从第一排出方向从硅化合物供给口喷射的硅化合物气体从反应容器的上游侧流向下游侧，同时排出锌气体从第一锌供给口向第二锌供给口偏离的排出管10b，设置在反应容器内的流动矫直构件的下游侧的排出管10b，在反应容器外排出含有硅的反应产物气体。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2009107896A Process for production of silicon 审中-公开
标题翻译：硅生产工艺
公开(公告)号：JP2009107896A
公开(公告)日：2009-05-21
申请号：JP2007282861
申请日：2007-10-31
申请人： Covalent Materials Corp , Kinotech Solar Energy Corp , コバレントマテリアル株式会社 , 株式会社キノテック・ソーラーエナジー
发明人： OHASHI TADASHI , MATSUMURA TAKASHI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： C01B33/033
摘要： PROBLEM TO BE SOLVED: To provide a process for the production of silicon where the recovery rate of produced silicon can be improved without complicating a production process and a production apparatus.
SOLUTION: In the process for the production of silicon using a zinc reduction process where silicon tetrachloride gas is reduced with zinc gas, while heating a tubular reactor 10 elected in a vertical direction by a heating furnace 20, the inside of the reaction tube 10 is fed with zinc gas from a zinc gas feed port 30a provided at the side circumferential face of the tubular reaction 10, further, silicon tetrachloride gas is discharged from the part lower than the zinc gas feed port 30a toward the upper part along the central axis C of the tubular reactor 10, and the temperature distribution in the reactor 10 is controlled in such a manner that the side on the central axis C is lower than that on the side of the side circumferential face, so as to produce silicon powder.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种生产硅的方法，其中可以提高生产的硅的回收率，而不会使生产工艺和生产设备复杂化。解决方案：在使用锌还原工艺生产硅的方法中，其中四氯化硅气体用锌气还原，同时加热由加热炉20在垂直方向选择的管式反应器10，反应内部管10从设置在管状反应10的侧面的锌气体供给口30a供给锌气体，此外，四氯化碳气体从沿着锌气体供给口30a的下方向着上述部分排出管状反应器10的中心轴C和反应器10中的温度分布被控制成使得中心轴线C的侧面比侧面侧的侧面低，从而生成硅粉末。版权所有（C）2009，JPO＆INPIT

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