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1. 发明专利

JP2009107877A Silicon production device 审中-公开
标题翻译：硅生产设备
公开(公告)号：JP2009107877A
公开(公告)日：2009-05-21
申请号：JP2007281416
申请日：2007-10-30
申请人： Covalent Materials Corp , Kinotech Solar Energy Corp , コバレントマテリアル株式会社 , 株式会社キノテック・ソーラーエナジー
发明人： OHASHI TADASHI , MATSUMURA TAKASHI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： C01B33/033
摘要： PROBLEM TO BE SOLVED: To provide a silicon production device where the whole can be simplified, maintenance is excellent, and silicon can be inexpensively produced.
SOLUTION: The polysilicon production device includes: a reaction tube 10; a heating furnace 20 heating the reaction tube 10; a zinc feed tube 30 feeding zinc into the reaction tube 10; a zinc charge part 40 charging the inside of the zinc feed tube 10 with zinc; a silicon compound feed tube 50 feeding a silicon compound into the reaction tube 10. The zinc feed tube 30 includes a zinc discharge port 30a discharging the inside of the reaction tube 10 with zinc; and a heating part 30b provided between the zinc discharge port 30a and the zinc charge part 40 and heating zinc charged from the zinc charge part 40. The zinc discharge port 30a and the heating part 30b are provided inside the reaction tube 10 and also are provided within a heating region α heated by the heating furnace 20.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以简化整体的硅生产装置，维护是优异的，并且可以廉价地生产硅。多晶硅制造装置包括：反应管10; 加热炉20，加热反应管10; 锌进料管30，其将锌进料到反应管10中; 将锌进料管10的内部用锌充电的锌充电部40; 将硅化合物进料到反应管10中的硅化合物进料管50.锌进料管30包括用锌排出反应管10内部的锌排出口30a; 以及设置在锌排出口30a和锌充电部40之间并且从锌充电部40充电的锌的加热部30b。锌排出口30a和加热部30b设置在反应管10的内部，并且还设置在由加热炉20加热的加热区域α内。（C）2009年，JPO＆INPIT

2. 发明专利

JP2009108365A Electrolysis apparatus 审中-公开
标题翻译：电解器
公开(公告)号：JP2009108365A
公开(公告)日：2009-05-21
申请号：JP2007281224
申请日：2007-10-30
申请人： Covalent Materials Corp , Kinotech Solar Energy Corp , コバレントマテリアル株式会社 , 株式会社キノテック・ソーラーエナジー
发明人： OHASHI TADASHI , MATSUMURA TAKASHI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： C25C7/06 , C25C3/34
CPC分类号： C25C7/005 , C25C3/34 , C25C7/06
摘要： PROBLEM TO BE SOLVED: To provide an electrolysis apparatus which can reduce an amount of the evaporation of an electrolytic solution without lowering a temperature of the electrolytic solution and can thereby prevent troubles such as clogging in an exhaust pipe.
SOLUTION: The electrolysis apparatus 1 includes: an electrolytic tank 10 in which an electrolytic solution 70 is charged; a heating section 20 provided around the electrolytic tank 10; an electrode portion 30 for electrolyzing the electrolytic solution 70; a lid 45 which is arranged at the upper part of the electrolytic tank 10 and forms a spatial region 40 above the electrolytic solution 10; a discharging portion 50 which is arranged on the lid 45 and discharges a by-product gas produced due to the electrolysis of the electrolytic solution 70 from the spatial region 40 to the outside; and an evaporation control member 60 which is arranged so as to float on the electrolytic solution 70 and cover the surface of the electrolytic solution 70 to inhibit the evaporation of the electrolytic solution 70.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种电解装置，其可以在不降低电解液温度的情况下减少电解液的蒸发量，从而可以防止排气管堵塞等问题。解决方案：电解装置1包括：电解槽10，其中电解溶液70被充电; 设置在电解槽10周围的加热部20; 用于电解电解液70的电极部分30; 盖45，布置在电解槽10的上部并形成电解液10上方的空间区域40; 排出部分50，布置在盖子45上，并将由于电解液70的电解产生的副产物从空间区域40排放到外部; 以及蒸发控制构件60，其布置成浮在电解溶液70上并覆盖电解溶液70的表面以阻止电解溶液70的蒸发。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009102190A Silicon manufacturing apparatus 审中-公开
标题翻译：硅制造设备
公开(公告)号：JP2009102190A
公开(公告)日：2009-05-14
申请号：JP2007274831
申请日：2007-10-23
申请人： Covalent Materials Corp , Kinotech Solar Energy Corp , コバレントマテリアル株式会社 , 株式会社キノテック・ソーラーエナジー
发明人： OHASHI TADASHI , MATSUMURA TAKASHI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： C01B33/033
摘要： PROBLEM TO BE SOLVED: To provide a silicon manufacturing apparatus capable of simplifying the whole apparatus and manufacturing silicon at a low cost. SOLUTION: The silicon manufacturing apparatus includes a reaction tube 10, a heating furnace 20 for heating the reaction tube 10, a zinc supply pipe 30 for supplying zinc to the reaction tube 10, a zinc charging part 40 for charging zinc into the zinc supply pipe 30, and a silicon compound supply pipe 50 for supplying a silicon compound into the reaction tube 10, wherein a connection part 30b of the zinc supply pipe 30 and a heating part 30a are provided in a heating region (α) of the heating furnace 20. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够以低成本简化整个装置并制造硅的硅制造装置。解决方案：硅制造装置包括反应管10，用于加热反应管10的加热炉20，用于向反应管10供给锌的锌供给管30，将锌充入到锌的充电部40 锌供给管30和用于将硅化合物供给到反应管10中的硅化合物供给管50，其中锌供给管30的连接部30b和加热部30a设置在加热区域（α）加热炉20.版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009167022A Apparatus for producing silicon 审中-公开
标题翻译：生产硅胶的设备
公开(公告)号：JP2009167022A
公开(公告)日：2009-07-30
申请号：JP2008003845
申请日：2008-01-11
申请人： Covalent Materials Corp , Kinotech Solar Energy Corp , コバレントマテリアル株式会社 , 株式会社キノテック・ソーラーエナジー
发明人： TAKEUCHI YOSHINORI , SAKAKI DAISUKE , OHASHI TADASHI , MATSUMURA TAKASHI
IPC分类号： C01B33/033
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for producing silicon capable of improving the efficiency of a reduction reaction so as to improve the yield of silicon and improving the separation recovery efficiency of the produced silicon and the produced gas as well, without causing complication in equipment configurations. SOLUTION: The apparatus for producing silicon is equipped with a zinc feed pipe which communicates a silicon compound gas to a reaction vessel 10 and supplies zinc gas from a first zinc supply port 40a into the reaction vessel in ejecting to a second ejecting direction, a flow straightening member 20 which is installed in the reaction vessel and allows the silicon compound gas ejected from a silicon compound supply port in the first ejecting direction to flow from the upstream side to the downstream side in the reaction vessel while the zinc gas ejected from the first zinc supply port to the second zinc supply port is deviated, and a discharge pipe 10b which is installed at the downstream side of the flow straightening member in the reaction vessel and discharges a reaction product gas containing silicon outside the reaction vessel. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种能够提高还原反应效率的硅的制造装置，以提高硅的产率，并提高生产的硅和所生产的气体的分离回收效率，而没有导致设备配置复杂化。解决方案：用于生产硅的装置配备有锌给料管，其将硅化合物气体连通到反应容器10，并将锌气从第一锌供给口40a供应到反应容器中，以排出到第二排出方向安装在反应容器中的流动矫直构件20，并且允许从第一排出方向从硅化合物供给口喷射的硅化合物气体从反应容器的上游侧流向下游侧，同时排出锌气体从第一锌供给口向第二锌供给口偏离的排出管10b，设置在反应容器内的流动矫直构件的下游侧的排出管10b，在反应容器外排出含有硅的反应产物气体。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2009107896A Process for production of silicon 审中-公开
标题翻译：硅生产工艺
公开(公告)号：JP2009107896A
公开(公告)日：2009-05-21
申请号：JP2007282861
申请日：2007-10-31
申请人： Covalent Materials Corp , Kinotech Solar Energy Corp , コバレントマテリアル株式会社 , 株式会社キノテック・ソーラーエナジー
发明人： OHASHI TADASHI , MATSUMURA TAKASHI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： C01B33/033
摘要： PROBLEM TO BE SOLVED: To provide a process for the production of silicon where the recovery rate of produced silicon can be improved without complicating a production process and a production apparatus.
SOLUTION: In the process for the production of silicon using a zinc reduction process where silicon tetrachloride gas is reduced with zinc gas, while heating a tubular reactor 10 elected in a vertical direction by a heating furnace 20, the inside of the reaction tube 10 is fed with zinc gas from a zinc gas feed port 30a provided at the side circumferential face of the tubular reaction 10, further, silicon tetrachloride gas is discharged from the part lower than the zinc gas feed port 30a toward the upper part along the central axis C of the tubular reactor 10, and the temperature distribution in the reactor 10 is controlled in such a manner that the side on the central axis C is lower than that on the side of the side circumferential face, so as to produce silicon powder.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种生产硅的方法，其中可以提高生产的硅的回收率，而不会使生产工艺和生产设备复杂化。解决方案：在使用锌还原工艺生产硅的方法中，其中四氯化硅气体用锌气还原，同时加热由加热炉20在垂直方向选择的管式反应器10，反应内部管10从设置在管状反应10的侧面的锌气体供给口30a供给锌气体，此外，四氯化碳气体从沿着锌气体供给口30a的下方向着上述部分排出管状反应器10的中心轴C和反应器10中的温度分布被控制成使得中心轴线C的侧面比侧面侧的侧面低，从而生成硅粉末。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2013056781A Silicon casting mold 审中-公开
标题翻译：硅铸模
公开(公告)号：JP2013056781A
公开(公告)日：2013-03-28
申请号：JP2011194458
申请日：2011-09-07
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： OHASHI TADASHI
IPC分类号： C01B33/02 , B22C3/00
摘要： PROBLEM TO BE SOLVED: To provide a silicon casting mold excellent in molding releasability, capable of preventing peeling and falling off of the inner surface of a mold and crack generation of the silicon ingot and provided with an easily moldable releasing layer in order to cast the uniform silicon ingot in good yield.SOLUTION: The releasing layer 3 molded on the inner surface of the silicon casting mold 1 is configured to include: a sintered compact made by thermal oxidation of silicon nitride powder produced by a thermal decomposition method for imides in a contacting part with the surface 4a of a molten silicon liquid filled in the mold 1 and the upper part 3A above the same; and a sintered compact made by thermal oxidation of silicon nitride powder produced by a direct nitridation method in the lower part 3B below the contact part with the molten silicon liquid surface 4a.
摘要翻译：要解决的问题：提供一种成型脱模性优异的硅铸造模具，能够防止模具的内表面的剥离和脱落以及硅锭的裂纹产生并且依次设置有容易模制的脱模层以均匀的硅锭铸造出良好的成品率。解决方案：模塑在硅铸造模具1的内表面上的脱模层3被构造成包括：通过热分解制造的烧结体，其通过热分解方法制备，所述氮化硅粉末与填充在模具1中的熔融硅液体的表面4a和位于模具1上方的上部3A; 以及通过直接氮化法制造的氮化硅粉末通过在与熔融硅液面4a的接触部分下方的下部3B中的热氧化而制成的烧结体。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2010208866A Crucible for melting silicon 审中-公开
标题翻译：可熔化硅
公开(公告)号：JP2010208866A
公开(公告)日：2010-09-24
申请号：JP2009053561
申请日：2009-03-06
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： OHASHI TADASHI , UEMOTO HIDEO
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
CPC分类号： Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a crucible for melting silicon, wherein a protective film can be prevented from being broken even when thermal shock or physical impact is added to the protective film, and the protective film itself can be easily broken upon releasing a silicon block from the crucible. SOLUTION: The crucible for melting silicon has a protective film 2 formed on at least the inner surface 1a of a crucible body 1 made of a heat-resistant member, wherein the protective film 2 includes a porous material having a plurality of closed pores, and the plurality of closed pores are arranged separately from one another from the outermost surface of the protective film 2 to the thickness direction of the film 2, and the protective film 2 includes solid particles at least the surface of which has a composition of SiO X N Y (X>0, Y>0). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供用于熔化硅的坩埚，其中即使当保护膜加入热冲击或物理冲击时，也可以防止保护膜破裂，并且保护膜本身可以容易地破裂从坩埚中释放硅块。解决方案：用于熔化硅的坩埚具有至少形成在由耐热构件制成的坩埚体1的内表面1a上的保护膜2，其中保护膜2包括具有多个封闭的多孔材料孔和多个封闭孔从保护膜2的最外表面相对于膜2的厚度方向彼此分开布置，并且保护膜2包括固体颗粒，其至少表面的组成为（X> 0，Y> 0）。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2008115056A Crucible for melting silicon and mold-releasing material used in the crucible 有权
标题翻译：用于熔化硅和模具释放材料的可溶性
公开(公告)号：JP2008115056A
公开(公告)日：2008-05-22
申请号：JP2006301692
申请日：2006-11-07
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： OHASHI TADASHI , UEMOTO HIDEO
IPC分类号： C30B29/06 , C04B41/87
摘要： PROBLEM TO BE SOLVED: To provide a crucible for melting silicon, from which the elution of impurities to a silicon melt is very little and which is excellent in the releasability from a silicon crystal obtained by solidifying the silicon melt in the crucible.
SOLUTION: The crucible 10 for melting silicon has such a structure that a protection film 14 is provided at least on the inner surface of a crucible main body 12 constituted of any of silica, graphite, and ceramics. The protection film 14 has a composition expressed by formula: SiO
X N
Y (wherein, X ≠ 0; and Y ≠ 0).
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于熔化硅的坩埚，其中杂质向硅熔体的溶出非常小，并且与通过使坩埚中的硅熔体固化而获得的硅晶体的脱模性优异。解决方案：用于熔化硅的坩埚10具有保护膜14至少设置在由二氧化硅，石墨和陶瓷中的任何一种构成的坩埚主体12的内表面上的结构。保护膜14具有由下式表示的组成：其中，X≠0，Y≠0。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2010077003A Crucible for melting silicon and release agent used for the same 审中-公开
标题翻译：用于熔化硅和用于其的释放剂
公开(公告)号：JP2010077003A
公开(公告)日：2010-04-08
申请号：JP2008250628
申请日：2008-09-29
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： OHASHI TADASHI , UMEMOTO SEIJIRO , ICHIKI TAKESHI
IPC分类号： C01B33/12 , B22C3/00 , B22D25/04
摘要： PROBLEM TO BE SOLVED: To provide a crucible for melting silicon provided with a protective film excellent in releasability and suppressing generation of crack and breakage of a silicon block due to adhesion between the protective film and the silicon block by the collapse of the protective film itself upon demolding the silicon block from the crucible, and to provide a release agent used for the crucible.
SOLUTION: The crucible for melting silicon comprises a crucible body 1 comprising a heat-resistant member and a protective film 2 formed at least on the inner surface 1a of the crucible body 1. The protective film 2 comprises: first solid particles having, at least on the surface thereof, a composition of SiO
X N
Y (X>0 and Y>0) and second solid particles having an SiO
2 composition and a smaller particle diameter than that of the first solid particles; and the second solid particles connect the first solid particles with each other at a part of the interface between the first solid particles.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种坩埚，其具有提供脱模性优异的保护膜的熔融硅，并且由于保护膜和硅块之间的粘合而导致的硅块的裂纹产生和硅块的破裂，保护膜本身将硅块从坩埚中脱模，并提供用于坩埚的脱模剂。解决方案：用于熔化硅的坩埚包括坩埚主体1，其包括耐热构件和至少形成在坩埚主体1的内表面1a上的保护膜2.保护膜2包括：第一固体颗粒，其具有，至少在其表面上具有SiO Y （X> 0和Y> 0）的组成和SiO 2 SB 2的第二固体颗粒， / SB>组成，并且比第一固体颗粒的粒径小; 并且所述第二固体颗粒在所述第一固体颗粒之间的界面的一部分处将所述第一固体颗粒彼此连接。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009215137A Molding die for casting polycrystalline silicon substrate, production method thereof, and method for producing polycrystalline silicon substrate 审中-公开
标题翻译：用于铸造多晶硅基材的成型模具及其制造方法和用于生产多晶硅基材的方法
公开(公告)号：JP2009215137A
公开(公告)日：2009-09-24
申请号：JP2008062749
申请日：2008-03-12
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： MATSUMURA TAKASHI , OHASHI TADASHI
IPC分类号： C01B33/02 , B22C3/00 , B22D25/04
摘要： PROBLEM TO BE SOLVED: To provide a molding die for casting a polycrystalline silicon substrate, which casting die does not suffer from separation of a mold release material, enables a silicon ingot to be easily demolded without being cracked, and can produce the polycrystalline silicon substrate silicon ingot less contaminated with impurities without being subjected to slicing, etc., to provide a production method thereof, and to provide a method for producing a polycrystalline silicon substrate. SOLUTION: The molding die is provided with a container main body 10 made of a heat-resistant member and a mold release material layer 20 applied to the inside surface of the container main body 10 and made from porous silicon nitride or porous silicon oxynitride. COPYRIGHT: (C)2009,JPO&INPIT

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