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1. 发明专利

JP2012132522A High-temperature valve device 审中-公开
标题翻译：高温阀装置
公开(公告)号：JP2012132522A
公开(公告)日：2012-07-12
申请号：JP2010286131
申请日：2010-12-22
申请人： Asahi Glass Co Ltd , Kinotech Solar Energy Corp , 旭硝子株式会社 , 株式会社キノテック・ソーラーエナジー
发明人： NAKAHARA KATSUMASA , KONDO MASAFUMI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： F16K49/00 , C01B33/033 , F16K1/22 , F16K1/226
CPC分类号： F16K49/002 , C01B33/033 , F16K1/221 , F16K49/005
摘要： PROBLEM TO BE SOLVED: To provide a high-temperature valve device of a simple configuration, which can exhibit high corrosion resistance, and can mechanically separate a reaction by-product and a material for reaction when producing silicon while maintaining them in a gas state completely different from the phase state of solid silicon.SOLUTION: A high-temperature valve device 40, 140, which can be positioned under a reactor 10 for generating silicon, is provided with: a first tube-shaped member connected to the interior space of the reactor, and capable of introducing silicon generated in the reactor; a valve positioned in the first tube-shaped member; and a heater 100 capable of heating a heating region including the valve and part of the first tube-shaped member from the reactor to the valve to a temperature greater than or equal to the boiling point of the related substances pertaining to the generation of silicon in the reactor.
摘要翻译：要解决的问题：提供一种简单结构的高温阀装置，其可以表现出高耐腐蚀性，并且在制造硅时可以机械分离反应副产物和反应材料，同时将它们保持在气体状态完全不同于固体硅的相态。解决方案：可以位于用于产生硅的反应器10下方的高温阀装置40,140设置有：连接到反应器的内部空间并能够引入的第一管状构件在反应器中产生的硅; 定位在第一管状构件中的阀; 以及加热器100，其能够将包括所述阀和所述第一管状部件的一部分的加热区域从所述反应器加热到所述阀，所述加热区域的温度大于或等于与所述硅的产生有关的相关物质的沸点反应堆。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2014040330A Apparatus and method for producing silicon 审中-公开
标题翻译：用于生产硅的装置和方法
公开(公告)号：JP2014040330A
公开(公告)日：2014-03-06
申请号：JP2010286130
申请日：2010-12-22
申请人： Asahi Glass Co Ltd , 旭硝子株式会社 , Kinotech Solar Energy Corp , 株式会社キノテック・ソーラーエナジー
发明人： NAKAHARA KATSUMASA , KONDO MASAFUMI , TAKEUCHI YOSHINORI , SAKAKI DAISUKE
IPC分类号： C01B33/033
CPC分类号： C01B33/033
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing silicon, each of which has such expandability that polycrystalline silicon can be produced at a low cost in high yield and can also be recovered continuously and efficiently while restraining a material of a member having a silicon deposition surface from being mixed therein.SOLUTION: While keeping the temperature of a portion of a reactor 10 within a silicon deposition temperature range by a heater 22, silicon tetrachloride gas is supplied into the reactor through a silicon tetrachloride gas supply port 16a and zinc gas is supplied into the reactor through a zinc gas supply port 18a so that the supplied silicon tetrachloride is reduced by the supplied zinc in the reactor and a silicon deposition zone S, where silicon is deposited, is formed on the wall part corresponding to the portion, the temperature of which is kept within the silicon deposition temperature range, of the reactor. After that, a bar member 24b of a peeling mechanism 24 is moved while being abutted on the silicon deposited in the silicon deposition zone to peel off the silicon deposited in the silicon deposition zone.
摘要翻译：要解决的问题：提供一种硅的制造方法和制造方法，其具有这样的可扩展性，可以高成本地以低成本制造多晶硅，并且还可以在抑制构件的材料的同时连续有效地回收具有硅沉积表面的混合物。解决方案：通过加热器22将反应器10的一部分温度保持在硅沉积温度范围内，四氯化碳气体通过四氯化硅气体供应口16a 通过锌气供给口18a将锌气体供给到反应器中，使得供给的四氯化硅通过反应器中供给的锌而被还原，并且在对应于其的壁部分上形成沉积硅的硅沉积区域S 其温度保持在硅淀积温度范围内的部分。之后，剥离机构24的杆件24b在沉积在硅沉积区中的硅上被移动，以剥离沉积在硅沉积区中的硅。

3. 发明专利

JP2014105126A Silica-containing particle production method 审中-公开
标题翻译：含二氧化硅颗粒生产方法
公开(公告)号：JP2014105126A
公开(公告)日：2014-06-09
申请号：JP2012259351
申请日：2012-11-28
申请人： Asahi Glass Co Ltd , 旭硝子株式会社 , Agc Si-Tech Co Ltd , Agcエスアイテック株式会社
发明人： KATAYAMA HAJIME , KONDO MASAFUMI , TANAKA AKIYASU
IPC分类号： C01B33/12
摘要： PROBLEM TO BE SOLVED: To prevent generation of hollow particles and increase a yield of silica-containing particles in a silica-containing particle production method.SOLUTION: A silica-containing particle production method includes: a step (A) of producing an emulsion which comprises a dispersion phase containing a silica-containing precursor and a continuous phase and where the number of multiphase emulsion droplets is 20 or less in 1,000 emulsion droplets; a step (B) of forming silica-containing particles by solidifying emulsion droplets containing the silica-containing precursor; a step (C) of agitating a liquid containing the silica-containing particles using an agitating member at a peripheral velocity of 7.5 m/s or more; and a step (D) of recovering the silica-containing particles.
摘要翻译：要解决的问题：为了防止在含二氧化硅的颗粒的制备方法中产生中空颗粒并增加二氧化硅颗粒的产率。解决方案：含二氧化硅的颗粒的制备方法包括：制备乳液的步骤（A）包含含有含二氧化硅的前体和连续相的分散相，其中在1,000个乳液液滴中多相乳液液滴的数量为20或更小; 通过固化含有含二氧化硅的前体的乳液液滴形成含二氧化硅的颗粒的步骤（B）使用搅拌部件以7.5m / s以上的圆周速度搅拌含有二氧化硅的粒子的液体的工序（C）; 和回收含二氧化硅的粒子的工序（D）。

4. 发明专利

JP2014105127A Silica-containing particle production method 有权
标题翻译：含二氧化硅颗粒生产方法
公开(公告)号：JP2014105127A
公开(公告)日：2014-06-09
申请号：JP2012259354
申请日：2012-11-28
申请人： Asahi Glass Co Ltd , 旭硝子株式会社 , Agc Si-Tech Co Ltd , Agcエスアイテック株式会社
发明人： KATAYAMA HAJIME , KONDO MASAFUMI , TANAKA AKIYASU
IPC分类号： C01B33/152 , B01J2/08
摘要： PROBLEM TO BE SOLVED: To increase a yield of silica-containing particles and increase purity of the silica-containing particles in a silica-containing particle production method.SOLUTION: A silica-containing particle production method includes steps of: producing an emulsion comprising a dispersion phase containing a silica-containing precursor and a continuous phase; forming silica-containing particles by solidifying emulsion droplets containing a silica-containing precursor; agitating a liquid containing the silica-containing particles using an agitating member at a peripheral velocity of 7.5 m/s or more; and recovering the silica-containing particles.
摘要翻译：要解决的问题：为了提高含二氧化硅的颗粒的产率，提高含二氧化硅的颗粒的制造方法中的含二氧化硅的颗粒的纯度。溶解性：含二氧化硅的颗粒的制造方法包括以下步骤：分散相含有含二氧化硅的前体和连续相; 通过固化含有含二氧化硅的前体的乳液液滴形成含二氧化硅的颗粒; 使用搅拌部件以7.5m / s以上的圆周速度搅拌含有二氧化硅的粒子的液体; 并回收含二氧化硅的颗粒。

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