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1. 发明申请

US20170098508A1 Methods for Forming Electrically Precise Capacitors, and Structures Formed Therefrom 审中-公开
公开(公告)号：US20170098508A1
公开(公告)日：2017-04-06
申请号：US15385727
申请日：2016-12-20
申请人： Arvind KAMATH , Criswell CHOI , Patrick SMITH , Erik SCHER , Jiang LI
发明人： Arvind KAMATH , Criswell CHOI , Patrick SMITH , Erik SCHER , Jiang LI
IPC分类号： H01G4/40 , H01L23/66 , H01G4/12 , H01Q1/38 , H01G4/008 , H01G4/01 , H01G4/224 , H01Q1/22 , H01L49/02 , H01G4/30
CPC分类号： H01G4/40 , H01G4/002 , H01G4/005 , H01G4/008 , H01G4/01 , H01G4/10 , H01G4/1209 , H01G4/224 , H01G4/30 , H01G4/306 , H01G4/33 , H01G13/00 , H01L23/66 , H01L27/016 , H01L28/60 , H01L2223/6677 , H01Q1/22 , H01Q1/2283 , H01Q1/38 , Y10T29/43 , Y10T29/435 , Y10T29/49002 , Y10T29/49016
摘要： High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.

2. 发明申请

US20150146345A1 Methods for Forming Electrically Precise Capacitors, and Structures Formed Therefrom 审中-公开
标题翻译：形成电精密电容器的方法及其结构
公开(公告)号：US20150146345A1
公开(公告)日：2015-05-28
申请号：US14613178
申请日：2015-02-03
申请人： Arvind KAMATH , Criswell CHOI , Patrick SMITH , Erik SCHER , Jiang LI
发明人： Arvind KAMATH , Criswell CHOI , Patrick SMITH , Erik SCHER , Jiang LI
IPC分类号： H01G4/10 , H01Q1/22 , H01G4/005 , H01G4/30
CPC分类号： H01G4/40 , H01G4/002 , H01G4/005 , H01G4/008 , H01G4/01 , H01G4/10 , H01G4/1209 , H01G4/224 , H01G4/30 , H01G4/306 , H01G4/33 , H01G13/00 , H01L23/66 , H01L27/016 , H01L28/60 , H01L2223/6677 , H01Q1/22 , H01Q1/2283 , H01Q1/38 , Y10T29/43 , Y10T29/435 , Y10T29/49002 , Y10T29/49016
摘要： High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
摘要翻译：高精度电容器及其形成方法采用精确且高度保形的沉积工艺，用于在各种粗糙度和组成的基底上沉积绝缘层。该方法通常包括以下步骤：通过原子层沉积（ALD）在金属衬底上沉积第一绝缘层; （b）在所述第一绝缘层上形成第一电容器电极; 和（c）在所述第一绝缘层上形成第二绝缘层，并且在所述第一电容器电极上或与所述第一电容器电极相邻。实施例提供了一种改进的沉积工艺，其在宽范围的衬底上产生高度保形的绝缘层，从而产生改进的电容器。

3. 发明申请

US20130243940A1 DIFFUSION BARRIER COATED SUBSTRATES AND METHODS OF MAKING THE SAME 有权
标题翻译：扩散阻挡层涂覆基板及其制造方法
公开(公告)号：US20130243940A1
公开(公告)日：2013-09-19
申请号：US13873156
申请日：2013-04-29
申请人： Arvind KAMATH , Michael KOCSIS , Kevin MCCARTHY , Gloria WONG , Jiang LI
发明人： Arvind KAMATH , Michael KOCSIS , Kevin MCCARTHY , Gloria WONG , Jiang LI
IPC分类号： H01F5/00 , H01Q7/00 , H01F41/04
CPC分类号： H01F5/003 , H01F5/00 , H01F41/041 , H01L27/1218 , H01L27/1292 , H01L29/78603 , H01L29/78681 , H01L29/7869 , H01Q1/2283 , H01Q7/00
摘要： Devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The devices include a metal substrate, a diffusion barrier layer on the metal substrate, one or more insulator layers on the diffusion barrier layer, and an antenna and/or inductor on the one or more insulator layer(s). The method includes forming a diffusion barrier layer on the metal substrate, forming one or more insulator layers on the diffusion barrier layer; and forming an antenna and/or inductor on an uppermost one of the insulator layer(s). The antenna and/or inductor is electrically connected to at least one of the diffusion barrier layer and/or the metal substrate. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into device layers formed thereon.
摘要翻译：公开了扩散阻挡涂层金属基板上的器件及其制造方法。这些器件包括金属衬底，金属衬底上的扩散阻挡层，扩散阻挡层上的一个或多个绝缘体层，以及一个或多个绝缘体层上的天线和/或电感器。该方法包括在金属基板上形成扩散阻挡层，在扩散阻挡层上形成一个或多个绝缘体层; 以及在所述绝缘体层的最上面形成天线和/或电感器。天线和/或电感器电连接到扩散阻挡层和/或金属衬底中的至少一个。这种扩散阻挡涂层的基底防止金属原子从金属基底扩散到其上形成的器件层。

4. 发明申请

US20120321245A1 SILICA-ON-SILICON WAVEGUIDES AND RELATED FABRICATION METHODS 有权
标题翻译：二氧化硅光波导和相关制造方法
公开(公告)号：US20120321245A1
公开(公告)日：2012-12-20
申请号：US13494707
申请日：2012-06-12
申请人： Kerry VAHALA , Hansuek LEE , Tong CHEN , Jiang LI
发明人： Kerry VAHALA , Hansuek LEE , Tong CHEN , Jiang LI
IPC分类号： G02B6/125 , G02B6/136 , H01L21/02 , G02B6/10
CPC分类号： G02B6/136
摘要： A method of manufacturing a waveguide eliminates a prior art reflow step and introduces certain new steps that permit fabricating of an ultra-low loss waveguide element on a silicon chip. The ultra-low loss waveguide element may be adapted to fabricate a number of devices, including a wedge resonator and a ultra-low loss optical delay line having an extended waveguide length.
摘要翻译：制造波导的方法消除了现有技术的回流步骤，并且引入允许在硅芯片上制造超低损耗波导元件的某些新步骤。超低损耗波导元件可以适于制造多个器件，包括具有扩展的波导长度的楔形谐振器和超低损耗光学延迟线。

5. 发明申请

US20120320448A1 CHIP-BASED FREQUENCY COMB GENERATOR WITH MICROWAVE REPETITION RATE 有权
标题翻译：具有微波重复速率的基于芯片的频率发电机
公开(公告)号：US20120320448A1
公开(公告)日：2012-12-20
申请号：US13525189
申请日：2012-06-15
申请人： Jiang LI , Hansuek LEE , Tong CHEN , Kerry VAHALA
发明人： Jiang LI , Hansuek LEE , Tong CHEN , Kerry VAHALA
IPC分类号： G02F2/02 , C03C25/68 , C03C25/22
CPC分类号： G02F1/353 , G02F1/2257 , G02F2201/063 , G02F2201/17 , G02F2201/58 , G02F2202/09 , G02F2202/105 , G02F2203/15 , G02F2203/54 , G02F2203/56 , G02F2203/69
摘要： A frequency comb generator fabricated on a chip with elimination of a disadvantageous reflow process, includes an ultra-high Q disk resonator having a waveguide that is a part of a wedge structure fabricated from a silicon dioxide layer of the chip. The disk resonator allows generation of a frequency comb with a mode spacing as low as 2.6 GHz and up to 220 GHz. A surface-loss-limited behavior of the disk resonator decouples a strong dependence of pumping threshold on repetition rate.
摘要翻译：制造在芯片上的消除不利的回流工艺的频率梳发生器包括具有作为由芯片的二氧化硅层制成的楔形结构的一部分的波导的超高Q盘谐振器。磁盘谐振器允许产生低至2.6GHz和高达220GHz的模式间隔的频率梳。盘式谐振器的表面损耗受限行为使抽水阈值对重复率的强烈依赖性解耦。

6. 发明申请

US20100250678A1 PEER-TO-PEER AIDED LIVE VIDEO SHARING SYSTEM 有权
标题翻译：同行对讲直播视频共享系统
公开(公告)号：US20100250678A1
公开(公告)日：2010-09-30
申请号：US12794639
申请日：2010-06-04
申请人： Yusuo HU , Chong LUO , Jian TANG , Jian-Guang LOU , Hua CAI , Jiang LI
发明人： Yusuo HU , Chong LUO , Jian TANG , Jian-Guang LOU , Hua CAI , Jiang LI
IPC分类号： G06F15/16
CPC分类号： H04N21/2743 , H04L67/104 , H04L67/1072 , H04L67/1085 , H04N7/17318 , H04N21/21 , H04N21/23 , H04N21/4788 , H04N21/632
摘要： Video data from an upload client is received at a hosting node. A request from a download client is received at a bootstrapping node to receive the video data. The download client to receive the video data directly from the hosting node when the hosting node is below a threshold, wherein the threshold is based at least in part on the maximum number of download clients the hosting node can stream to simultaneously. The download client to receive the video data from peers in a peer-to-peer overlay when the hosting node above the threshold.
摘要翻译：在主机节点接收来自上传客户端的视频数据。在自举节点处接收来自下载客户端的请求以接收视频数据。所述下载客户端在所述主机节点低于阈值时直接从所述主机节点接收所述视频数据，其中所述阈值至少部分地基于所述主机节点可以同时流式传输的下载客户端的最大数目。当主机节点高于阈值时，下载客户端从点对点覆盖中的对等端接收视频数据。

7. 发明申请

US20090213779A1 MULTI-HOP WIRELESS RELAY COMMUNICATION SYSTEM AND DOWNLINK DATA TRANSMITTING METHOD AND DEVICE 审中-公开
标题翻译：多呼叫无线中继通信系统和下行链路数据传输方法和设备
公开(公告)号：US20090213779A1
公开(公告)日：2009-08-27
申请号：US12405814
申请日：2009-03-17
申请人： Aimin ZHANG , Zheng SHANG , Chengyan FENG , Jiang LI
发明人： Aimin ZHANG , Zheng SHANG , Chengyan FENG , Jiang LI
IPC分类号： H04B7/14 , H04W4/00 , H04L12/28 , H04B3/36
CPC分类号： H04W88/04 , H04W8/26 , H04W40/22
摘要： A downlink data transmitting method is applied to a multi-hop wireless relay communication system. The method includes the following steps. A network unit obtains an identifier of a next hop network unit corresponding to a connection identifier (CID) in a downlink medium access control protocol data unit (MPDU) header according to an existing corresponding relationship of the CID and a path ID, and sends the downlink MPDU to the next hop network unit by utilizing the obtained identifier of the next hop network unit, so that a data transmission of multi-hop wireless communication system is realized without changing a current user terminal and protocol structure of a core network. Meanwhile, a multi-hop wireless relay system, and a base station and relay stations applied to the system are described.
摘要翻译：下行链路数据发送方法应用于多跳无线中继通信系统。该方法包括以下步骤。网络单元根据CID和路径ID的现有对应关系，在下行链路媒体接入控制协议数据单元（MPDU）报头中获得对应于连接标识符（CID）的下一跳网络单元的标识符，并发送通过利用获得的下一跳网络单元的标识符向下一跳网络单元下行MPDU，从而实现多跳无线通信系统的数据传输，而不改变当前用户终端和核心网络的协议结构。同时，描述了一种多跳无线中继系统，以及应用于该系统的基站和中继站。

8. 发明申请

US20120273795A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120273795A1
公开(公告)日：2012-11-01
申请号：US13455596
申请日：2012-04-25
申请人： Jiang LI
发明人： Jiang LI
IPC分类号： H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/4236
摘要： Provided is a semiconductor device comprising a back barrier layer that is formed by a group III-V compound semiconductor above a substrate; a channel layer that is formed of a group III-V compound semiconductor having less bandgap energy than the back barrier layer, is formed on the back barrier layer, and includes a recessed portion formed in at least a portion of the channel layer above the back barrier layer to be thinner than other portions of the channel layer; a first electrode that is in ohmic contact with the channel layer; and a second electrode formed at least above the recessed portion of the channel layer.
摘要翻译：提供一种半导体器件，其包括由衬底上的III-V族化合物半导体形成的背部阻挡层; 在后阻挡层上形成由具有比后阻挡层少的带隙能量的III-V族化合物半导体形成的沟道层，并且包括形成在沟道层的至少一部分上的凹部阻挡层比沟道层的其它部分薄; 与沟道层欧姆接触的第一电极; 以及形成在沟道层的凹部的至少上方的第二电极。

9. 发明申请

US20160045843A1 SYSTEM AND METHOD FOR EMULSION BREAKING AND PHASE SEPARATION BY DROPLET ADHESION 审中-公开
标题翻译：用于乳化剂粘合的乳化断裂和相分离的系统和方法
公开(公告)号：US20160045843A1
公开(公告)日：2016-02-18
申请号：US14829259
申请日：2015-08-18
申请人： Howard A. STONE , Jiang LI , Haosheng CHEN
发明人： Howard A. STONE , Jiang LI , Haosheng CHEN
IPC分类号： B01D17/04 , C03C17/30 , C03C17/00 , B01J19/24 , B01L3/00
CPC分类号： B01D17/04 , B01F5/0647 , B01F13/0071 , B01J19/0093 , B01J2219/00783 , B01J2219/00792 , B01J2219/00828 , B01J2219/00831 , B01J2219/00833 , B01J2219/0084 , B01J2219/0086 , B01J2219/00889 , B01J2219/00903 , B01J2219/00907 , B01L3/502707 , B01L3/502769 , B01L2200/0673 , B01L2300/0838 , B01L2300/0864 , B01L2300/161 , B01L2400/0487 , C03C17/004 , C03C17/30 , C03C2217/76
摘要： Emulsion breaking and phase separation is achieved by droplet adhesion. An emulsion breaking device includes a channel having distinct adjacent zones with distinctly different surface wettability characteristics, namely, solvophilic and solvophobic surfaces. The device is positioned such that the upstream portion of the device is configured to be wetted by the continuous phase of the emulsion, and the downstream portion of the device is configured to be wetted by the dispersed phase of the emulsion. As the emulsion flows from the upstream zone to the downstream zone, the change in surface wettability characteristics promotes adhesion of the dispersed phase as the dispersed phase wets the surface of the downstream portion of the channel, which results in breaking of the emulsion. Subsequent collection of the broken emulsion in a collection vessel results in separation of the disparate phases to facilitate their recapture and recycling.
摘要翻译：乳液破碎和相分离通过液滴粘附实现。乳液破碎装置包括具有不同相邻区域的通道，其具有明显不同的表面润湿特性，即溶剂性和疏油性表面。该装置被定位成使得装置的上游部分构造成被乳液的连续相润湿，并且装置的下游部分被构造成被乳液的分散相润湿。当乳液从上游区流向下游区时，表面润湿特性的变化促进分散相的粘附，因为分散相润湿通道下游部分的表面，导致乳液破裂。随后在收集容器中收集破碎的乳液，导致不同相的分离，以促进它们的再捕获和再循环。

10. 发明申请

US20150092808A1 CHIP-BASED LASER RESONATOR DEVICE FOR HIGHLY COHERENT LASER GENERATION 有权
标题翻译：基于芯片的激光共振器器件，用于高度相干激光产生
公开(公告)号：US20150092808A1
公开(公告)日：2015-04-02
申请号：US13525147
申请日：2012-06-15
申请人： Jiang LI , Hansuek LEE , Tong CHEN , Kerry VAHALA
发明人： Jiang LI , Hansuek LEE , Tong CHEN , Kerry VAHALA
IPC分类号： H01S5/10 , H01S5/227
CPC分类号： H01S5/2275 , H01S3/0632 , H01S3/083 , H01S3/094057 , H01S3/0941 , H01S3/176 , H01S3/30 , H01S5/1075 , H01S2301/02
摘要： A highly-coherent chip-based laser generating system includes a disk resonator incorporating a wedge structure fabricated from a silicon dioxide layer of a chip. The disk resonator is operable to generate a highly-coherent laser from a low-coherence optical pump input provided at an optical power level as low as 60 μW. The disk resonator is fabricated with sub-micron cavity size control that allows generation of a highly-coherent laser using a controllable Stimulated Brillouin Scattering process that includes matching of a cavity free-spectral-range to a Brillouin shift frequency in silica. While providing several advantages due to fabrication on a chip, the highly-coherent laser produced by the disk resonator may feature a Schawlow-Townes noise level as low as 0.06 Hz2/Hz (measured with the coherent laser at a power level of about 400 μW) and a technical noise that is at least 30 dB lower than the low-coherence optical pump input.
摘要翻译：高度相干的基于芯片的激光发生系统包括一个包含由芯片的二氧化硅层制成的楔形结构的光盘谐振器。盘式谐振器可操作以从低至60μW的光功率级提供的低相干光泵输入产生高相干激光。盘式谐振器采用亚微米腔体尺寸控制制造，其允许使用可控激励的布里渊散射方法产生高相干激光，其包括空腔自由光谱范围与二氧化硅中的布里渊移动频率的匹配。虽然由于在芯片上的制造而提供了几个优点，但是由盘式谐振器产生的高相干激光器可以具有低至0.06Hz2 / Hz的Schwlow-Townes噪声电平（以约400μW的功率水平的相干激光器测量））和比低相干光泵输入低至少30 dB的技术噪声。

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