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1. 发明申请

US20110206479A1 FLUSH MOUNTED FASTENER FOR PLASMA PROCESSING APPARATUS 有权
标题翻译：用于等离子体加工设备的冲压安装紧固件
公开(公告)号：US20110206479A1
公开(公告)日：2011-08-25
申请号：US13025472
申请日：2011-02-11
申请人： Gregory Sexton
发明人： Gregory Sexton
IPC分类号： F16B35/00 , B23P11/00
CPC分类号： F16B35/042 , H01J37/32807 , H01J37/32908
摘要： A fastener assembly for parts of a plasma chamber. The fastener assembly includes a bolt with a tool engaging socket and a spring-loaded pin which fits in a through hole of the bolt. When installed, the spring-loaded pin substantially fills the space in the socket and thus prevents parasitic plasma from forming in spaces between opposed surfaces of the pin and bolt. When a tool such as a hex key is inserted into the socket, the spring-loaded pin retracts and the tool rotates the bolt to attach an upper part to a lower part by engaging threads of the bolt with a threaded hole in the lower part.
摘要翻译：用于等离子体室的部件的紧固件组件。紧固件组件包括具有工具接合插座的螺栓和装配在螺栓的通孔中的弹簧加载销。当安装时，弹簧加载销基本上填充插座中的空间，从而防止在销和螺栓的相对表面之间的空间中形成寄生等离子体。当诸如六角扳手的工具插入插座中时，弹簧加载的销缩回，并且工具旋转螺栓以通过将螺栓的螺纹与下部的螺纹孔接合而将上部附接到下部。

2. 发明申请

US20080179010A1 Bevel etcher with vacuum chuck 有权
标题翻译：斜角蚀刻机与真空吸盘
公开(公告)号：US20080179010A1
公开(公告)日：2008-07-31
申请号：US11698189
申请日：2007-01-26
申请人： Andrew D. Bailey III , Alan M. Schoepp , Gregory Sexton , William S. Kennedy
发明人： Andrew D. Bailey III , Alan M. Schoepp , Gregory Sexton , William S. Kennedy
IPC分类号： C23F1/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/3065 , H01L21/02087 , H01L21/67069 , H01L21/6838
摘要： A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.
摘要翻译：包括用于清洁斜边缘并用于减小半导体衬底的弯曲曲率的真空吸盘的斜面蚀刻机。斜面蚀刻机包括真空吸盘和等离子体产生单元，其将处理气体激发成等离子体状态。真空吸盘包括卡盘主体和支撑环。卡盘体的上表面和支撑环的内周形成由安装在支撑环上的基板的底面包围的真空区域。真空泵在运行期间抽空真空区域。真空吸盘可操作以通过衬底的顶表面和底表面之间的压力差将衬底保持在适当的位置。压差也产生弯曲力以减小基板的弯曲曲率。

3. 发明授权

US07943007B2 Configurable bevel etcher 有权
标题翻译：可配置斜角蚀刻机
公开(公告)号：US07943007B2
公开(公告)日：2011-05-17
申请号：US11698190
申请日：2007-01-26
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
IPC分类号： H01L21/00
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

4. 发明申请

US20080182412A1 Configurable bevel etcher 有权
标题翻译：可配置斜角蚀刻机
公开(公告)号：US20080182412A1
公开(公告)日：2008-07-31
申请号：US11698190
申请日：2007-01-26
申请人： Andrew D. Bailey III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
发明人： Andrew D. Bailey III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
IPC分类号： C23F1/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

5. 发明授权

US09053925B2 Configurable bevel etcher 有权
标题翻译：可配置斜角蚀刻机
公开(公告)号：US09053925B2
公开(公告)日：2015-06-09
申请号：US13081264
申请日：2011-04-06
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
IPC分类号： H01L21/00 , H01L21/02 , H01J37/32 , H01L21/67
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

6. 发明申请

US20140007901A1 METHODS AND APPARATUS FOR BEVEL EDGE CLEANING IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：在等离子体处理系统中进行水平边缘清洗的方法和装置
公开(公告)号：US20140007901A1
公开(公告)日：2014-01-09
申请号：US13543028
申请日：2012-07-06
申请人： Jack Chen , Gregory Sexton , Yunsang Kim
发明人： Jack Chen , Gregory Sexton , Yunsang Kim
IPC分类号： B08B7/00 , B32B1/04
CPC分类号： H01L21/67028 , H01L21/67051 , Y10T428/218
摘要： Methods and apparatus for more efficiently cleaning a substrate having a notch in a plasma processing chamber configured for bevel edge cleaning. A notched plasma exclusion ring an inner periphery and an outer periphery is provided. The notched plasma exclusion ring has a ring notch formed at its outer periphery. The notched plasma exclusion ring has a notch apex dimension that is at least as large as a notch apex dimension of the substrate notch and a notch opening dimension that is at least as large as a notch opening dimension of the substrate notch. Methods for obtaining misalignment data and for subsequently rotate substrates to more efficiently clean the substrate notch are also disclosed.
摘要翻译：用于更有效地清洁在等离子体处理室中具有凹口的衬底的方法和装置，其被配置用于斜面边缘清洁。提供了一个内周边和外围的缺口等离子体排除环。缺口等离子体排除环在其外周形成有环形凹口。缺口等离子体排除环具有至少与基板切口的切口顶点尺寸一样大的切口顶点尺寸和至少与基板切口的切口开口尺寸一样大的切口开口尺寸。还公开了用于获得未对准数据并随后旋转衬底以更有效地清洁衬底凹口的方法。

7. 发明授权

US08580078B2 Bevel etcher with vacuum chuck 有权
标题翻译：斜角蚀刻机与真空吸盘
公开(公告)号：US08580078B2
公开(公告)日：2013-11-12
申请号：US11698189
申请日：2007-01-26
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , William S. Kennedy
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , William S. Kennedy
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/3065 , H01L21/02087 , H01L21/67069 , H01L21/6838
摘要： A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.
摘要翻译：包括用于清洁斜边缘并用于减小半导体衬底的弯曲曲率的真空吸盘的斜面蚀刻机。斜面蚀刻机包括真空吸盘和等离子体产生单元，其将处理气体激发成等离子体状态。真空吸盘包括卡盘主体和支撑环。卡盘体的上表面和支撑环的内周形成由安装在支撑环上的基板的底面包围的真空区域。真空泵在运行期间抽空真空区域。真空吸盘可操作以通过衬底的顶表面和底表面之间的压力差将衬底保持在适当的位置。压差也产生弯曲力以减小基板的弯曲曲率。

8. 发明申请

US20120318455A1 PASSIVE COMPENSATION FOR TEMPERATURE-DEPENDENT WAFER GAP CHANGES IN PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：等离子体处理系统中温度依赖性波形变化的被动补偿
公开(公告)号：US20120318455A1
公开(公告)日：2012-12-20
申请号：US13160452
申请日：2011-06-14
申请人： Andreas Fischer , Gregory Sexton
发明人： Andreas Fischer , Gregory Sexton
IPC分类号： C23F1/08
CPC分类号： H01J37/32522 , H01J37/32568 , H01L21/67109
摘要： Passive wafer gap compensation arrangements and methods relying on temperature-driven dimensional change of thermally expanding component(s) to counteract, substantially or partially, the change in the wafer gap due to chamber component temperature change is provided. The passive arrangements and techniques involve passively raising or lowering the substrate-facing component or the substrate support to counteract, substantially or partially, the gap-narrowing effect or gap-expanding effect of rising temperature, thereby reducing or eliminating the change in the wafer gap due to a change in the chamber component temperature. Cooling arrangement(s) and thermal break(s) are optionally provided to improve performance.
摘要翻译：提供了基于热膨胀部件的温度驱动的尺寸变化以抵消，基本上或部分地由于室部件温度变化导致的晶片间隙的变化的被动晶片间隙补偿装置和方法。被动布置和技术涉及被动地升高或降低面向基板的部件或基板支撑件，以抵消上升温度的间隙变窄效应或间隙扩大效应，从而减少或消除晶片间隙的变化由于腔室部件温度的变化。可选地提供冷却装置和热断裂以提高性能。

9. 发明申请

US20110214687A1 CONFIGURABLE BEVEL ETCHER 审中-公开
标题翻译：可配置BEVEL ETCHER
公开(公告)号：US20110214687A1
公开(公告)日：2011-09-08
申请号：US13081264
申请日：2011-04-06
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
IPC分类号： C23F1/08 , B08B13/00 , B08B7/00
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

10. 发明授权

US08562266B2 Flush mounted fastener for plasma processing apparatus 有权
标题翻译：用于等离子体处理装置的嵌入式紧固件
公开(公告)号：US08562266B2
公开(公告)日：2013-10-22
申请号：US13025472
申请日：2011-02-11
申请人： Gregory Sexton
发明人： Gregory Sexton
IPC分类号： F16B23/00
CPC分类号： F16B35/042 , H01J37/32807 , H01J37/32908
摘要： A fastener assembly for parts of a plasma chamber. The fastener assembly includes a bolt with a tool engaging socket and a spring-loaded pin which fits in a through hole of the bolt. When installed, the spring-loaded pin substantially fills the space in the socket and thus prevents parasitic plasma from forming in spaces between opposed surfaces of the pin and bolt. When a tool such as a hex key is inserted into the socket, the spring-loaded pin retracts and the tool rotates the bolt to attach an upper part to a lower part by engaging threads of the bolt with a threaded hole in the lower part.
摘要翻译：用于等离子体室的部件的紧固件组件。紧固件组件包括具有工具接合插座的螺栓和装配在螺栓的通孔中的弹簧加载销。当安装时，弹簧加载销基本上填充插座中的空间，从而防止在销和螺栓的相对表面之间的空间中形成寄生等离子体。当诸如六角扳手的工具插入插座中时，弹簧加载的销缩回，并且工具旋转螺栓以通过将螺栓的螺纹与下部的螺纹孔接合而将上部附接到下部。

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