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1. 发明授权

US4582020A Chemical vapor deposition wafer boat 失效
公开(公告)号：US4582020A
公开(公告)日：1986-04-15
申请号：US607065
申请日：1984-05-04
申请人： Arthur J. Learn , Dale R. DuBois
发明人： Arthur J. Learn , Dale R. DuBois
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , H01L21/205 , B05C13/02
CPC分类号： C23C16/45559 , C23C16/455 , C23C16/45591
摘要： A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.

2. 发明授权

US4641604A Chemical vapor deposition wafer boat 失效
标题翻译：化学气相沉积晶圆舟
公开(公告)号：US4641604A
公开(公告)日：1987-02-10
申请号：US804954
申请日：1985-12-05
申请人： Arthur J. Learn , Dale R. DuBois
发明人： Arthur J. Learn , Dale R. DuBois
IPC分类号： C23C16/44 , C23C16/455 , B05C13/02
CPC分类号： C23C16/45559 , C23C16/455 , C23C16/45591
摘要： A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.
摘要翻译：用于以垂直于船的轴线的均匀间隔的垂直取向支撑多个晶片的化学气相沉积晶片舟皿包括具有封闭端并由相互接合的上下半筒组成的圆柱体。上半圆柱体具有扩散区，其中在其中的气流通道在其内部，并且从垂直平面通过气缸轴线的0至75°和0至15度内的区域。剩余的双缸壁和端部是没有气体流动通道的挡板区域。下半圆柱体的端部和侧壁包括气体扩散区域。气体流动通道占相应气体扩散区域的表面积的0.5％至80％。

3. 发明授权

US4694778A Chemical vapor deposition wafer boat 失效
公开(公告)号：US4694778A
公开(公告)日：1987-09-22
申请号：US828625
申请日：1986-02-10
申请人： Arthur J. Learn , Dale R. DuBois
发明人： Arthur J. Learn , Dale R. DuBois
IPC分类号： C23C16/44 , C23C16/455 , B05C13/02
CPC分类号： C23C16/45559 , C23C16/455 , C23C16/45591
摘要： A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.

4. 发明申请

US20120211164A1 SYSTEMS FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION AND BEVEL EDGE ETCHING 审中-公开
标题翻译：等离子体增强化学气相沉积和水平蚀刻系统
公开(公告)号：US20120211164A1
公开(公告)日：2012-08-23
申请号：US13456080
申请日：2012-04-25
申请人： Ashish Shah , Dale R. DuBois , Ganesh Balasubramanian , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
发明人： Ashish Shah , Dale R. DuBois , Ganesh Balasubramanian , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
IPC分类号： H01L21/3065 , C23C16/458 , C23C16/50 , H01L21/306
CPC分类号： H01L21/6719 , H01J37/32366 , H01J2237/3321 , H01L21/67201 , H01L21/67207
摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.
摘要翻译：本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和普通排气泵。每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。

5. 发明授权

US08444926B2 Processing chamber with heated chamber liner 有权
标题翻译：具有加热室衬板的加工室
公开(公告)号：US08444926B2
公开(公告)日：2013-05-21
申请号：US11668947
申请日：2007-01-30
申请人： Mark A. Fodor , Sophia M. Velastegui , Bok Hoen Kim , Dale R. DuBois
发明人： Mark A. Fodor , Sophia M. Velastegui , Bok Hoen Kim , Dale R. DuBois
IPC分类号： A62D3/00 , B01J19/00 , C23F1/00 , H01L21/306 , B05C11/00 , C23C16/00 , H05B3/00 , H05B11/00
CPC分类号： C23C16/46
摘要： A heater liner assembly suitable for covering the interior of a plasma processing chamber is provided. In some embodiments, a liner assembly for a processing chamber can include a heating element embedded in a body. A flange extending outward from an outer diameter of the body includes an upper surface having a sealing surface and at least one pad that extends from the upper surface of the flange to an elevation beyond the sealing surface. The pad contributes to control of the temperature of the liner assembly by maintaining the liner assembly spaced apart from the processing chamber.
摘要翻译：提供一种适用于覆盖等离子体处理室内部的加热器衬套组件。在一些实施例中，用于处理室的衬套组件可以包括嵌入在主体中的加热元件。从主体的外径向外延伸的凸缘包括具有密封表面的上表面和从凸缘的上表面延伸到超过密封表面的高度的至少一个垫。衬垫有助于通过保持衬套组件与处理室间隔开来控制衬套组件的温度。

6. 发明授权

US4524719A Substrate loading means for a chemical vapor deposition apparatus 失效
标题翻译：用于化学气相沉积装置的基板装载装置
公开(公告)号：US4524719A
公开(公告)日：1985-06-25
申请号：US529415
申请日：1983-09-06
申请人： Bryant A. Campbell , Dale R. DuBois , Ralph F. Manriquez , Nicholas E. Miller
发明人： Bryant A. Campbell , Dale R. DuBois , Ralph F. Manriquez , Nicholas E. Miller
IPC分类号： C23C16/48 , C23C16/54 , C23C13/08
CPC分类号： C23C16/54 , C23C16/481 , Y10S414/141
摘要： A controlled temperature deposition device comprising an inner reaction chamber having gas distribution means for introducing gas into inner chamber and removing gas therefrom and a vacuum chamber means surrounding the inner deposition chamber and spaced from the walls thereof for maintaining a medium vacuum therein. Associated with the deposition device is a substrate loading and unloading fork which transfers substrates such as wafer boats from outside the device to a position in the inner deposition chamber and removes them from the inner deposition chamber following deposition.
摘要翻译：一种控制温度沉积装置，包括具有气体分配装置的内部反应室，该气体分配装置用于将气体引入内部并从其中除去气体;以及真空室装置，围绕内部沉积室并与其间隔开并保持其中的真空。与沉积装置相关联的是基板装载和卸载叉，其将诸如晶片舟皿的基板从装置的外部传送到内部沉积室中的位置，并且在沉积之后将其从内部沉积室中移出。

7. 发明申请

US20120097330A1 DUAL DELIVERY CHAMBER DESIGN 审中-公开
标题翻译：双重交付室设计
公开(公告)号：US20120097330A1
公开(公告)日：2012-04-26
申请号：US12908617
申请日：2010-10-20
申请人： Prahallad Iyengar , Sanjeev Baluja , Dale R. DuBois , Juan Carlos Rocha-Alverez , Thomas Nowak , Scott A. Hendrickson , Yong-Won Lee , Mei-Yee Shek , Li-Qun Xia , Derek R. Witty
发明人： Prahallad Iyengar , Sanjeev Baluja , Dale R. DuBois , Juan Carlos Rocha-Alverez , Thomas Nowak , Scott A. Hendrickson , Yong-Won Lee , Mei-Yee Shek , Li-Qun Xia , Derek R. Witty
IPC分类号： H01L21/465 , H01L21/46
CPC分类号： H01L21/02164 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/463 , C23C16/5096 , H01L21/02274
摘要： A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead.
摘要翻译：衬底处理系统包括与处理室相邻的热处理器或等离子体发生器。第一处理气体进入热处理器或等离子体发生器。然后，第一处理气体直接通过喷头流入处理室。第二处理气体流过穿过喷头的第二流路。第一和第二处理气体混合在喷淋头下面，并且一层材料沉积在喷头下方的基底上。

8. 发明授权

US06699530B2 Method for constructing a film on a semiconductor wafer 失效
标题翻译：在半导体晶片上构造膜的方法
公开(公告)号：US06699530B2
公开(公告)日：2004-03-02
申请号：US08808246
申请日：1997-02-28
申请人： Michal Danek , Marvin Liao , Eric Englhardt , Mei Chang , Yeh-Jen Kao , Dale R. DuBois , Alan F. Morrison
发明人： Michal Danek , Marvin Liao , Eric Englhardt , Mei Chang , Yeh-Jen Kao , Dale R. DuBois , Alan F. Morrison
IPC分类号： B05D306
CPC分类号： C23C16/45565 , C23C16/34 , C23C16/4408 , C23C16/4581 , C23C16/4586 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01J2237/2001 , H01J2237/336 , H01L21/28512 , H01L21/28556 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76864
摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.
摘要翻译：放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。在晶片上沉积一层材料。接下来，将材料层退火。一旦退火完成，材料可能被氧化。或者，一旦退火完成，材料可能暴露于硅气体。沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从腔室中移除晶片，直到完成所有三个步骤。用于进行这种原位结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和射频信号装置。淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

9. 发明授权

US5855687A Substrate support shield in wafer processing reactors 失效
标题翻译：晶圆处理反应器中的基板支撑屏蔽
公开(公告)号：US5855687A
公开(公告)日：1999-01-05
申请号：US326506
申请日：1994-10-20
申请人： Dale R. DuBois , Alan F. Morrison , Richard A. Marsh , Mei Chang
发明人： Dale R. DuBois , Alan F. Morrison , Richard A. Marsh , Mei Chang
IPC分类号： C23C16/44 , C23C16/04 , C23C16/455 , C23C16/458 , H01L21/205 , H01L21/285 , H01L21/683 , H01L21/687 , C23C16/00 , C23C14/00 , C23F1/00 , H01L21/00
CPC分类号： C23C16/45521 , C23C16/04 , C23C16/042 , C23C16/4585 , H01L21/68735
摘要： Apparatus for CVD processing wherein a wafer mounted on a vertically movable susceptor beneath a showerhead. The susceptor extends beyond the outer perimeter of the wafer such that, when the susceptor is raised into contact with a shield ring which normally rests on a ring support in the chamber, the shield ring engages outer portion of the susceptor beyond the perimeter of the wafer, lifting the shield ring off its support. The shield ring shields the edge of the top surface of the susceptor during the deposition, whereby unwanted deposition on the susceptor is prevented while, at the same time, allowing for deposition over the entire upper surface of the wafer. To center the shield ring and the susceptor with respect to each other, the shield ring may include a plurality of centering protrusions, at least some of which engage the susceptor as it moves upwards to lift the shield ring off its supports in the chamber.
摘要翻译：用于CVD处理的装置，其中安装在淋浴喷头下方的垂直移动的基座上的晶片。感受体延伸超过晶片的外周边，使得当基座升高成与通常位于室中的环支撑件上的屏蔽环接触时，屏蔽环接合基座的外部部分超过晶片的周边将护盾环从支架上取下。屏蔽环在沉积期间屏蔽基座的顶表面的边缘，由此防止基座上的不希望的沉积，同时允许沉积在晶片的整个上表面上。为了将屏蔽环和基座相对于彼此定位，屏蔽环可以包括多个定心突起，当其向上移动以将屏蔽环从腔室中的支撑件提升时，至少一些定心突起接合基座。

10. 发明授权

US5522937A Welded susceptor assembly 失效
标题翻译：焊接基座组件
公开(公告)号：US5522937A
公开(公告)日：1996-06-04
申请号：US237084
申请日：1994-05-03
申请人： Sandy M. Chew , Dale R. DuBois , Ronald L. Rose , Manus Wong
发明人： Sandy M. Chew , Dale R. DuBois , Ronald L. Rose , Manus Wong
IPC分类号： C23C16/44 , C23C16/458 , C23C16/50 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/683 , H01L21/687 , C23C16/00
CPC分类号： H01L21/68764 , C23C16/458 , H01L21/68707 , H01L21/68785 , H01L21/68792
摘要： A susceptor support arm assembly in a substrate processing chamber includes a secure ground connection between the susceptor and ground. An aluminum wire rope is welded to a winged terminal lug which is tightly inserted into a hole in a susceptor hub. The wings of the lug are then welded to the hub. The wire rope, now permanently attached to the susceptor hub, is routed through an opening in the susceptor end of a ceramic susceptor support arm, able to pass the ground end lug of the wire rope, through a channel in the support arm back to the susceptor arm support device, and to ground. The channel in the susceptor arm has grooves in its sides to receive a paddle shaped ceramic cover to enclose the channel and the bottom of the hub end of the susceptor arm. The cover insulates, isolates, and shields the grounding wire and thermocouple leads being routed from the susceptor hub back to the support end of the susceptor arm from exposure to the high intensity radiant energy directed at the back of the susceptor. Conical spring washers and shoulder screws, attach the metallic pieces (e.g. the susceptor hub) to the ceramic susceptor hub arm allowing for the differential thermal expansion between pieces without overstressing the ceramic material clamped. Surface treatment of the metallic pieces enhances their corrosion resistance.
摘要翻译：衬底处理室中的感受器支撑臂组件包括在基座和地面之间的牢固接地连接。铝丝绳焊接到紧密插入基座毂孔中的翼形端子凸耳上。接头的翼部然后焊接到轮毂。现在永久地连接到基座轮毂上的钢丝绳穿过陶瓷基座支撑臂的基座端部的开口，该开口能够使钢丝索的接地端部凸起通过支撑臂中的通道回到感受器臂支撑装置，并接地。基座臂中的通道在其侧面具有凹槽，以容纳桨形陶瓷盖以封闭通道和基座臂的毂端的底部。盖子将接地线和热电偶引线绝缘，隔离和屏蔽，从接受器轮毂回到基座臂的支撑端，暴露于指向基座背面的高强度辐射能。圆锥形弹簧垫圈和肩螺钉，将金属片（例如，基座毂）连接到陶瓷基座轮毂臂上，允许片之间的不同热膨胀，而不会对夹持的陶瓷材料施加过大的应力。金属片的表面处理提高了其耐腐蚀性。

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