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    • 9. 发明授权
    • Backside contact of sensor microstructures
    • 传感器微结构背面接触
    • US5511428A
    • 1996-04-30
    • US257716
    • 1994-06-10
    • Howard D. GoldbergMartin A. Schmidt
    • Howard D. GoldbergMartin A. Schmidt
    • B81B7/00G01F1/684G01L9/00G01P15/08H01L29/96
    • B81B7/0061B81B7/007G01F1/6845G01L9/0042G01L9/0073G01P15/0802G01B2210/64
    • A sensor microstructure contact scheme is provided for making backside electrical, mechanical, fluidic, or other contact to mechanical microstructures. The contact scheme is applicable to pressure sensors, shear stress sensors, flow rate sensors, temperature sensors, resonant microactuators, and other microsensors and microactuators. The contact scheme provides a microelectromechanical sensor body and support structure for backside contact of the sensor body, and features a support wafer substrate having one or more through-wafer vias each with a lateral span on the dimension of microns and a span that is more narrow at the wafer front surface than at the wafer back surface. An insulating film covers a portion of the support wafer substrate and sidewalls of the vias--with the lateral via span at the front surface being open. The front surface of the support wafer substrate is bonded to the front surface of a sensor body wafer substrate, such that contact of the front surface of the sensor body wafer substrate may be made through the support wafer substrate vias from the back surface of the support wafer substrate. The sensor body wafer substrate is adapted to define a mechanical sensor microstructure, and comprises a plurality of isolated substrate regions, each region corresponding to one of the support wafer substrate through-wafer vias. Each such region is circumscribed by an edge of the mechanical sensor microstructure and an isolating border region. Contact made through one of the support wafer substrate through-wafer vias to the corresponding one of the sensor body substrate regions is isolated and thereby prevented from making contact to any other sensor body substrate region.
    • 提供传感器微结构接触方案用于制造机械微观结构的背面电气,机械,流体或其他接触。 接触方案适用于压力传感器,剪切应力传感器,流量传感器,温度传感器,共振微致动器和其他微传感器和微型致动器。 接触方案提供了用于传感器主体的背侧接触的微机电传感器主体和支撑结构,其特征在于具有一个或多个贯穿晶片通孔的支撑晶片基板,每个通孔具有微米尺寸上的横向跨度和更窄的跨度 在晶片正面与晶片背面相比。 绝缘膜覆盖支撑晶片基板的一部分和通孔的侧壁,其中在前表面处的横向通孔跨度是敞开的。 支撑晶片基板的前表面结合到传感器体晶片基板的前表面,使得传感器体晶片基板的前表面可以通过支撑晶片基板通孔从支撑体的后表面 晶圆基板。 传感器体晶片衬底适于限定机械传感器微结构,并且包括多个隔离的衬底区域,每个区域对应于支撑晶片衬底通晶片通孔之一。 每个这样的区域被机械传感器微结构的边缘和隔离边界区域限定。 通过支撑晶片衬底通过晶片通孔中的一个到相应的一个传感器主体衬底区域的接触被隔离,从而防止与任何其它传感器主体衬底区域接触。
    • 10. 发明授权
    • Batch deposition of polymeric ion sensor membranes
    • 聚合离子传感器膜的分批沉积
    • US5607566A
    • 1997-03-04
    • US196105
    • 1994-10-03
    • Richard B. BrownGuen-Sig ChaHoward D. Goldberg
    • Richard B. BrownGuen-Sig ChaHoward D. Goldberg
    • G01N27/333G01N27/414G01N27/26
    • G01N27/3335
    • Screen printing technology is employed in the batch fabrication of the contacts and polymeric membranes of solid-state ion-selective sensors. The process achieves high yield with very reproducible results. Moreover, membrane thickness can easily be predetermined, as it is directly related to the thickness of the screen or stencil. The process of the present invention is compatible with many integrated circuit manufacturing technologies, including CMOS fabrication. Advantageous polymeric membrane paste compositions include a polyurethane/hydroxylated poly(vinyl chloride) compound and a silicone-based compound in appropriate solvent systems to provide screen-printable pastes of the appropriate viscosity and thixotropy.
    • PCT No.PCT / US92 / 07037 Sec。 371日期:1994年10月3日 102(e)日期1994年10月3日PCT 1992年8月20日提交印刷技术用于批量制造固态离子选择传感器的接触和聚合物膜。 该方法获得高产量,结果非常可重现。 此外,膜厚度可以容易地被预先确定,因为其与丝网或模板的厚度直接相关。 本发明的方法与许多集成电路制造技术相兼容,包括CMOS制造。 有利的聚合物膜糊组合物包括在合适的溶剂体系中的聚氨酯/羟基化聚(氯乙烯)化合物和硅氧烷基化合物,以提供具有适当粘度和触变性的可印刷丝网的浆料。