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1. 发明公开

EP1694885A2 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：具有多chemisms金属分离系统
公开(公告)号：EP1694885A2
公开(公告)日：2006-08-30
申请号：EP04760000.2
申请日：2004-04-16
申请人： APPLIED MATERIALS, INC. , Ellwanger, Russell C.
发明人： YANG, Michael, X. , XI, Ming , BRITCHER, Eric, B. , DONOSO, Bernardo , PANG, Lily, L. , SHERMAN, Svetlana , HO, Henry , NGUYEN, Anh, N. , LERNER, Alexander, N. , D'AMBRA, Allen, L. , SHANMUGASUNDRAM, Arulkumar , ISHIKAWA, Tetsuya , RABINOVICH, Yevgeniy , LUBOMIRSKY, Dmitry , MOK, Yeuk-Fai, Edwin , NGUYEN, Son, T.
IPC分类号： C25D1/00
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

2. 发明申请

WO2003060186A1 CHAMBER HARDWARE DESIGN FOR TITANIUM NITRIDE ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：硝酸钛原子层沉积的室内硬件设计
公开(公告)号：WO2003060186A1
公开(公告)日：2003-07-24
申请号：PCT/US2002/040785
申请日：2002-12-20
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Anh, N. , CHIAO, Steve, H. , YUAN, Xiaoxiong , LEI, Lawrence, Chung-Lai , XI, Ming , YANG, Michael, X. , SUTTER, Sean, M. , ITOH, Toshio
IPC分类号： C23C16/44
CPC分类号： C23C16/34 , C23C16/4411 , C23C16/45544 , C23C16/45565 , C23C16/4557 , C23C16/45574
摘要： A lid assembly and a method for ALD is provided. In one aspect, the lid assembly includes a lid plate (122) having an upper and lower surface, a manifold block (150) disposed on the upper surface having one or more cooling channels formed therein, and one or more ( 155A, 155B) valves disposed on the manifold block. The lid assembly also includes a distribution plate (130) disposed on the lower surface having a plurality of apertures and one or more openings ( 131A, 131B) formed there-through, and at least two isolated flow paths formed within the lid plate, manifold block, and distribution plate. A first flow path (153A, 124A, 154A) of the at least two isolated flow paths is in fluid communication with the one or more openings and a second flow path of the at least two isolated flow paths is in fluid communication with the plurality of apertures.
摘要翻译：提供盖组件和ALD方法。一方面，盖组件包括具有上表面和下表面的盖板（122），设置在上表面上的具有一个或多个冷却通道的歧管块（150）和一个或多个（155A，155B）设置在歧管块上的阀。盖组件还包括设置在下表面上的分配板（130），其具有多个孔和形成在其中的至少两个隔离的流动通道和形成在盖板内的至少两个隔离流动通道的开口（131A，131B）块和配电盘。所述至少两个隔离流动路径的第一流动路径（153A，124A，154A）与所述一个或多个开口流体连通，并且所述至少两个隔离流动路径的第二流动路径与所述多个孔。

3. 发明申请

WO2002070779A1 APPARATUS AND METHOD FOR SEQUENTIAL DEPOSITION OF FILMS 审中-公开
标题翻译：用于顺序沉积膜的装置和方法
公开(公告)号：WO2002070779A1
公开(公告)日：2002-09-12
申请号：PCT/US2002/005647
申请日：2002-02-25
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Anh, N. , YANG, Michael, X. , XI, Ming , CHUNG, Hua , CHANG, Anzhong , YUAN, Xiaoxiong , LU, Siqing
IPC分类号： C23C16/455
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4411 , H01L21/67017
摘要： A semiconductor system includes a body defining a processing chamber, a holder disposed within the processing chamber to support the substrate, and a fluid injection assembly to facilitate sequential deposition of films. In one embodiment, the fluid injection assembly is coupled to the body and includes high-flow-velocity valves, a baffle plate, and a support. The support is connected between the valves and the baffle plate. In one embodiment the valves are coupled to the support through a W-seal to direct a flow of fluid into the processing chamber, with the flow of fluid having an original direction and a velocity associated therewith. The baffle plate is disposed in the flow path to disperse the flow of fluids in a plane extending transversely to the original direction. In this manner, the baffle plate varies the velocity of the flow of fluids.
摘要翻译：半导体系统包括限定处理室的主体，设置在处理室内以支撑衬底的保持器，以及用于促进膜顺序沉积的流体注入组件。在一个实施例中，流体注射组件联接到主体并且包括高流速阀，挡板和支撑件。支撑件连接在阀门和挡板之间。在一个实施例中，阀通过W密封件联接到支撑件，以将流体流引导到处理室中，其中流体流具有原始方向和与其相关联的速度。挡板设置在流动路径中以将流体流分散在横向于原始方向延伸的平面中。以这种方式，挡板改变流体的流速。

4. 发明申请

WO2011112617A3 ATOMIC LAYER DEPOSITION CHAMBER WITH MULTI INJECT 审中-公开
公开(公告)号：WO2011112617A3
公开(公告)日：2011-09-15
申请号：PCT/US2011/027599
申请日：2011-03-08
申请人： APPLIED MATERIALS, INC. , YUDOVSKY, Joseph , NGUYEN, Anh, N. , NGO, Tai, T.
发明人： YUDOVSKY, Joseph , NGUYEN, Anh, N. , NGO, Tai, T.
IPC分类号： C23C16/455 , C23C16/44 , H01L21/205
摘要： Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly.

5. 发明申请

WO1999041766A1 REACTOR FOR CHEMICAL VAPOR DEPOSITION OF TITANIUM 审中-公开
标题翻译：化学气相沉积反应器
公开(公告)号：WO1999041766A1
公开(公告)日：1999-08-19
申请号：PCT/US1999/002842
申请日：1999-02-09
申请人： APPLIED MATERIALS, INC.
发明人： UMOTOY, Salvador , NGUYEN, Anh, N. , TRAN, Truc, T. , LEI, Lawrence, Chung, Lai , CHANG, Mei
IPC分类号： H01J37/32
CPC分类号： C23C16/45565 , C23C16/455 , H01J37/3244 , H01J37/32449
摘要： A plasma reaction chamber particularly suited for plasma-enhanced chemical vapor deposition of titanium using TiCl 4 as the precursor. The reactor includes a perforated showerhead faceplate and a perforated blocker plate within the showerhead to evenly distribute the atomized TiCl 4 . Both the showerhead faceplate and the blocker plate are made of solid nickel. RF power is applied between the showerhead faceplate and the heater pedestal supporting the wafer to excite the processing gas into a plasma. A shield ring is set on the periphery of the heater pedestal to confine the plasma to the processing region above the wafer. The shield ring is supported on the heater pedestal by a downwardly descending ridge, thereby minimizing thermal flow. The shield ring also protects the periphery of the top surface of the heater pedestal not covered by the wafer. An isolator electrically insulates the RF-driven showerhead from the chamber body and is disposed generally above the shield ring. The bottom of the isolator and the top of the shield ring are similarly curved with a nearly constant gap between them. The small gap creates a flow choke between the processing region and an annular pumping channel. The curve of the gap prevents the plasma from extending into the pumping channel. The bottom of the chamber below the heater pedestal is covered with a quartz thermal shield insert to reduce the flow of head to the chamber wall. A lift ring for raising lift pins selectively lifting the wafer is also composed of quartz.
摘要翻译：一种等离子体反应室，特别适用于使用TiCl4作为前体的钛的等离子体增强化学气相沉积。反应器包括穿孔淋浴头面板和淋浴器内的穿孔阻塞板，以均匀分布雾化的TiCl4。喷头面板和阻挡板均由固体镍制成。在喷头面板和支撑晶片的加热器基座之间施加RF功率以将处理气体激发成等离子体。屏蔽环设置在加热器基座的周边上，以将等离子体限制在晶片上方的处理区域。屏蔽环通过向下的下降脊支撑在加热器底座上，从而最小化热流。屏蔽环还保护未被晶片覆盖的加热器基座的顶表面的周边。隔离器将RF驱动的喷头与室主体电绝缘并且大致设置在屏蔽环的上方。隔离器的底部和屏蔽环的顶部类似地弯曲，它们之间具有几乎恒定的间隙。小间隙在处理区域和环形泵送通道之间产生流动扼流圈。间隙的曲线阻止等离子体延伸到泵送通道中。加热器底座下面的腔室底部覆盖有石英热屏蔽插入件，以减少头部到室壁的流动。用于升高提升针的提升环选择性地提升晶片也由石英组成。

6. 发明申请

WO2014113179A1 QUARTZ UPPER AND LOWER DOMES 审中-公开
标题翻译： QUARTZ UPPER和更低的国家
公开(公告)号：WO2014113179A1
公开(公告)日：2014-07-24
申请号：PCT/US2013/076295
申请日：2013-12-18
申请人： APPLIED MATERIALS, INC
发明人： CHANG, Anzhong , BRILLHART, Paul , SAMIR, Mehmet Tugrul , NGUYEN, Anh, N. , PATALAY, Kailash Kiran , KUMAR, Surajit , ABOAGYE, Steve , CARLSON, David, K. , KUPPURAO, Satheesh , RANISH, Joseph, M. , SEREBRYANOV, Oleg , IU, Dongming , LAU, Shu-Kwan , ZHU, Zouming , DINIZ, Herman
IPC分类号： H01L21/02 , H01L21/205
CPC分类号： H01L21/67115 , C23C16/45504
摘要： Embodiments of the invention relate to a dome assembly. The dome assembly includes an upper dome comprising a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes through an intersection of the central window and the upper peripheral flange is at an angle of about 8° to about 16° with respect to a planar upper surface of the peripheral flange, a lower dome comprising a lower peripheral flange and a bottom connecting the lower peripheral flange with a central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the lower peripheral flange is at an angle of about 8° to about 16° with respect to a planar bottom surface of the lower peripheral flange.
摘要翻译：本发明的实施例涉及一种圆顶组件。圆顶组件包括上拱顶，其包括中心窗，以及在中心窗的圆周处接合中心窗的上周缘，其中中心窗的内表面上的切线穿过中心窗的交点并且上周缘相对于周缘凸缘的平面上表面成大约8°至大约16°的角度，下圆顶包括下周边凸缘和将下周边凸缘连接到中心开口的底部，其中穿过底部和下部周边凸缘的交叉点的底部外表面上的切线相对于下部周边凸缘的平坦底面成约8°至约16°的角度。

7. 发明申请

WO2004094702A2 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：多化学镀层系统
公开(公告)号：WO2004094702A2
公开(公告)日：2004-11-04
申请号：PCT/US2004/012012
申请日：2004-04-16
申请人： APPLIED MATERIALS, INC. , ELLWANGER, Russell, C. , YANG, Michael, X. , XI, Ming , BRITCHER, Eric, B. , DONOSO, Bernardo , PANG, Lily, L. , SHERMAN, Svetlana , HO, Henry , NGUYEN, Anh, N. , LERNER, Alexander, N. , D'AMBRA, Allen, L. , SHANMUGASUNDRAM, Arulkumar , ISHIKAWA, Tetsuya , RABINOVICH, Yevgeniy , LUBOMIRSKY, Dmitry , MOK, Yeuk-Fai, Edwin , NGUYEN, Son, T.
发明人： YANG, Michael, X. , XI, Ming , BRITCHER, Eric, B. , DONOSO, Bernardo , PANG, Lily, L. , SHERMAN, Svetlana , HO, Henry , NGUYEN, Anh, N. , LERNER, Alexander, N. , D'AMBRA, Allen, L. , SHANMUGASUNDRAM, Arulkumar , ISHIKAWA, Tetsuya , RABINOVICH, Yevgeniy , LUBOMIRSKY, Dmitry , MOK, Yeuk-Fai, Edwin , NGUYEN, Son, T.
IPC分类号： C25D
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

8. 发明公开

EP2545197A2 ATOMIC LAYER DEPOSITION CHAMBER WITH MULTI INJECT 有权
标题翻译：室中多次注射矿核分层损伤
公开(公告)号：EP2545197A2
公开(公告)日：2013-01-16
申请号：EP11753949.4
申请日：2011-03-08
申请人： Applied Materials, Inc.
发明人： YUDOVSKY, Joseph , NGUYEN, Anh, N. , NGO, Tai, T.
IPC分类号： C23C16/455 , C23C16/44 , H01L21/205
CPC分类号： C23C16/45574 , C23C16/4408 , C23C16/45504 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45591 , H01J37/32449 , H01L21/0228 , H01L21/28194 , H01L21/3141
摘要： Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly.

9. 发明申请

WO2010123877A2 CVD APPARATUS FOR IMPROVED FILM THICKNESS NON-UNIFORMITY AND PARTICLE PERFORMANCE 审中-公开
标题翻译：改善薄膜厚度的CVD装置非均匀性和颗粒性能
公开(公告)号：WO2010123877A2
公开(公告)日：2010-10-28
申请号：PCT/US2010/031723
申请日：2010-04-20
申请人： APPLIED MATERIALS, INC. , TRAN, Binh , CUI, Anqing , HWANG, Bernard, L. , NGUYEN, Son, T. , NGUYEN, Anh, N. , SEUTTER, Sean, M. , TAO, Xianzhi
发明人： TRAN, Binh , CUI, Anqing , HWANG, Bernard, L. , NGUYEN, Son, T. , NGUYEN, Anh, N. , SEUTTER, Sean, M. , TAO, Xianzhi
IPC分类号： H01L21/205
CPC分类号： H01L21/6719 , C23C16/4401 , C23C16/4409 , C23C16/45512 , C23C16/45561 , H01L21/68742 , H01L21/68785
摘要： Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.
摘要翻译：本发明的实施例提供了用于在衬底上沉积层（例如通过化学气相沉积（CVD））的改进的装置。本文公开的本发明的装置可以有利地促进一种或多种在给定的处理室内具有降低的膜厚度不均匀的沉积膜，改善的颗粒性能（例如，在处理室中形成的膜上的还原颗粒），室到室的性能在多个处理室之间进行匹配，以及改进的处理室可维护性。

10. 发明申请

WO2010022215A3 PROCESS GAS DELIVERY FOR SEMICONDUCTOR PROCESS CHAMBER 审中-公开
公开(公告)号：WO2010022215A3
公开(公告)日：2010-02-25
申请号：PCT/US2009/054423
申请日：2009-08-20
申请人： APPLIED MATERIALS, INC. , SANGAM, Kedarnath , NGUYEN, Anh, N.
发明人： SANGAM, Kedarnath , NGUYEN, Anh, N.
IPC分类号： H01L21/205 , H01L21/00 , H01L21/02
摘要： Methods and apparatus for a gas delivery assembly are provided herein. In some embodiments, the gas delivery assembly includes a gas inlet funnel having a first volume; and a gas conduit having an inlet to receive a gas and an outlet to facilitate the flow of the gas out of the gas conduit and into the first volume, wherein the gas conduit has a second volume less than the first volume, and an increasing cross-section from a first cross-section proximate the inlet to a second cross-section proximate the outlet, wherein the second cross-section is non-circular. In some embodiments, each conduit has a longitudinal axis that intersects a central axis of the gas inlet funnel.

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