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1. 发明授权

US08906776B2 Method for forming integrated circuits on a strained semiconductor substrate 有权
标题翻译：在应变半导体衬底上形成集成电路的方法
公开(公告)号：US08906776B2
公开(公告)日：2014-12-09
申请号：US13240769
申请日：2011-09-22
申请人： Daniel Bensahel , Aomar Halimaoui
发明人： Daniel Bensahel , Aomar Halimaoui
IPC分类号： H01L21/30 , H01L29/78 , H01L21/18 , H01L21/3063
CPC分类号： H01L29/7849 , H01L21/187 , H01L21/3063 , H01L29/06 , H01L29/32 , H01L29/78
摘要： A method for forming an electronic circuit on a strained semiconductor substrate, including the steps of: forming, on a first surface of a semiconductor substrate, electronic components defining electronic chips to be sawn; and forming at least portions of a layer of a porous semiconductor material on the side of a second surface of the semiconductor substrate, opposite to the first surface, to bend the semiconductor substrate.
摘要翻译：一种在应变半导体衬底上形成电子电路的方法，包括以下步骤：在半导体衬底的第一表面上形成限定要锯切的电子芯片的电子部件; 以及在所述半导体衬底的与所述第一表面相对的一侧的所述一侧上形成多孔半导体材料层的至少一部分以弯曲所述半导体衬底。

2. 发明授权

US08536027B2 Method for making a semi-conducting substrate located on an insulation layer 有权
标题翻译：制造位于绝缘层上的半导体衬底的方法
公开(公告)号：US08536027B2
公开(公告)日：2013-09-17
申请号：US12679271
申请日：2008-09-26
申请人： Aomar Halimaoui , Daniel Bensahel
发明人： Aomar Halimaoui , Daniel Bensahel
IPC分类号： H01L21/20 , H01L29/02
CPC分类号： H01L29/0649 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/76262 , H01L21/764
摘要： A method for making a silicon layer extending on an insulation layer, including the steps of forming a silicon-germanium layer on at least a portion of a silicon wafer; transforming portions of the silicon-germanium layer into porous silicon pads; growing a monocrystalline silicon layer on the silicon-germanium layer and on the porous silicon pads; removing the silicon-germanium layer; oxidizing the porous silicon pads; and depositing an insulation material on the silicon layer.
摘要翻译：一种用于制造在绝缘层上延伸的硅层的方法，包括以下步骤：在硅晶片的至少一部分上形成硅 - 锗层; 将硅 - 锗层的部分转变成多孔硅垫; 在硅 - 锗层和多孔硅垫上生长单晶硅层; 去除硅 - 锗层; 氧化多孔硅垫; 以及在所述硅层上沉积绝缘材料。

3. 发明申请

US20050026457A1 Method for forming a localized region of a material difficult to etch 有权
标题翻译：用于形成难以蚀刻的材料的局部区域的方法
公开(公告)号：US20050026457A1
公开(公告)日：2005-02-03
申请号：US10744680
申请日：2003-12-23
申请人： Aomar Halimaoui , Daniel Bensahel
发明人： Aomar Halimaoui , Daniel Bensahel
IPC分类号： H01L21/28 , H01L21/316 , H01L21/336 , H01L29/51 , H01L21/338 , H01L21/461
CPC分类号： H01L21/28194 , H01L21/31604 , H01L21/31691 , H01L29/517 , H01L29/66583
摘要： A method for forming, in an integrated circuit, a localized region of a material difficult to etch, including the steps of forming a first silicon oxide layer having a thickness smaller than 1 nm on a silicon substrate; depositing, on the first layer, a second layer selectively etchable with respect to the first layer; forming in the second layer an opening according to the pattern of said localized region; selectively growing on the second layer, around the opening, a germanium layer, the material of the second layer being chosen to enable this selective growth, whereby there exists in the germanium an opening conformable with the above opening; depositing the material difficult to etch so that it does not deposit on the germanium; depositing a conductive layer to fill the opening in the germanium; performing a leveling to expose the germanium; and removing the germanium and the first and second layers.
摘要翻译：一种在集成电路中形成难以蚀刻的材料的局部区域的方法，包括在硅衬底上形成厚度小于1nm的第一氧化硅层的步骤; 在所述第一层上沉积相对于所述第一层可选择性地蚀刻的第二层; 在所述第二层中形成根据所述局部区域的图案的开口; 选择性地生长在第二层上，围绕开口，锗层，选择第二层的材料以使其能够进行选择性生长，由此在锗中存在与上述开口相适应的开口; 沉积材料难以蚀刻，使得其不沉积在锗上; 沉积导电层以填充锗中的开口; 进行平整暴露锗; 并且去除锗以及第一和第二层。

4. 发明申请

US20120094470A1 METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR SUBSTRATE 有权
标题翻译：在应变半导体衬底上形成集成电路的方法
公开(公告)号：US20120094470A1
公开(公告)日：2012-04-19
申请号：US13240769
申请日：2011-09-22
申请人： Daniel Bensahel , Aomar Halimaoui
发明人： Daniel Bensahel , Aomar Halimaoui
IPC分类号： H01L21/762
CPC分类号： H01L29/7849 , H01L21/187 , H01L21/3063 , H01L29/06 , H01L29/32 , H01L29/78
摘要： A method for forming an electronic circuit on a strained semiconductor substrate, including the steps of: forming, on a first surface of a semiconductor substrate, electronic components defining electronic chips to be sawn; and forming at least portions of a layer of a porous semiconductor material on the side of a second surface of the semiconductor substrate, opposite to the first surface, to bend the semiconductor substrate.
摘要翻译：一种在应变半导体衬底上形成电子电路的方法，包括以下步骤：在半导体衬底的第一表面上形成限定要锯切的电子芯片的电子部件; 以及在所述半导体衬底的与所述第一表面相对的一侧的所述一侧上形成多孔半导体材料层的至少一部分以弯曲所述半导体衬底。

5. 发明授权

US07279404B2 Process for fabricating strained layers of silicon or of a silicon/germanium alloy 有权
标题翻译：制造硅或硅/锗合金应变层的工艺
公开(公告)号：US07279404B2
公开(公告)日：2007-10-09
申请号：US10882995
申请日：2004-07-01
申请人： Aomar Halimaoui , Daniel Bensahel
发明人： Aomar Halimaoui , Daniel Bensahel
IPC分类号： H01L21/20
CPC分类号： H01L21/324 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02694 , H01L29/7842 , Y10S438/96
摘要： A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes:a) the formation of a layer (2) of silicon or of a silicon/germanium alloy on a layer (1) of a material having a modifiable lattice parameter; andb) the modification of the lattice parameter.
摘要翻译：一种制造硅或硅/锗合金应变层的工艺包括：a）在具有可修改的材料的层（1）上形成硅层或硅/锗合金层（2）晶格参数和b）修改晶格参数。

6. 发明授权

US06969661B2 Method for forming a localized region of a material difficult to etch 有权
公开(公告)号：US06969661B2
公开(公告)日：2005-11-29
申请号：US10744680
申请日：2003-12-23
申请人： Aomar Halimaoui , Daniel Bensahel
发明人： Aomar Halimaoui , Daniel Bensahel
IPC分类号： H01L21/28 , H01L21/316 , H01L21/336 , H01L29/51 , H01L21/3205
CPC分类号： H01L21/28194 , H01L21/31604 , H01L21/31691 , H01L29/517 , H01L29/66583
摘要： A method for forming, in an integrated circuit, a localized region of a material difficult to etch, including the steps of forming a first silicon oxide layer having a thickness smaller than 1 nm on a silicon substrate; depositing, on the first layer, a second layer selectively etchable with respect to the first layer; forming in the second layer an opening according to the pattern of said localized region; selectively growing on the second layer, around the opening, a germanium layer, the material of the second layer being chosen to enable this selective growth, whereby there exists in the germanium an opening conformable with the above opening; depositing the material difficult to etch so that it does not deposit on the germanium; depositing a conductive layer to fill the opening in the germanium; performing a leveling to expose the germanium; and removing the germanium and the first and second layers.

7. 发明申请

US20050037599A1 Process for fabricating strained layers of silicon or of a silicon/germanium alloy 有权
标题翻译：制造硅或硅/锗合金应变层的工艺
公开(公告)号：US20050037599A1
公开(公告)日：2005-02-17
申请号：US10882995
申请日：2004-07-01
申请人： Aomar Halimaoui , Daniel Bensahel
发明人： Aomar Halimaoui , Daniel Bensahel
IPC分类号： H01L21/20 , H01L21/324 , C30B1/00 , H01L21/425
CPC分类号： H01L21/324 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02694 , H01L29/7842 , Y10S438/96
摘要： A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes: a) the formation of a layer (2) of silicon or of a silicon/germanium alloy on a layer (1) of a material having a modifiable lattice parameter; and b) the modification of the lattice parameter.
摘要翻译：一种制造硅或硅/锗合金应变层的工艺包括：a）在具有可修改的材料的层（1）上形成硅层或硅/锗合金层（2）晶格参数和b）修改晶格参数。

8. 发明授权

US08178426B2 Method for manufacturing a structure of semiconductor-on-insulator type 有权
标题翻译：用于制造绝缘体上半导体型结构的方法
公开(公告)号：US08178426B2
公开(公告)日：2012-05-15
申请号：US12031202
申请日：2008-02-14
申请人： Aomar Halimaoui , Yves Morand , Yves Campidelli , Olivier Kermarrec
发明人： Aomar Halimaoui , Yves Morand , Yves Campidelli , Olivier Kermarrec
IPC分类号： H01L21/20
CPC分类号： H01L21/76245
摘要： A method for manufacturing an insulated semiconductor layer, including: forming a porous silicon layer on a single-crystal silicon surface; depositing an insulating material so that it penetrates into the pores of the porous silicon layer; eliminating the insulating material to expose the upper surface of the porous silicon; and growing by epitaxy a semiconductor layer.
摘要翻译：一种绝缘半导体层的制造方法，包括：在单晶硅表面上形成多孔硅层; 沉积绝缘材料使其渗入多孔硅层的孔中; 消除绝缘材料暴露多孔硅的上表面; 并通过外延生长半导体层。

9. 发明授权

US07635615B2 Manufacturing processing for an isolated transistor with strained channel 有权
标题翻译：具有应变通道的隔离晶体管的制造处理
公开(公告)号：US07635615B2
公开(公告)日：2009-12-22
申请号：US11454398
申请日：2006-06-16
申请人： Jean-Charles Barbe , Sylvian Barraud , Claire Fenouillet-Beranger , Claire Gallon , Aomar Halimaoui
发明人： Jean-Charles Barbe , Sylvian Barraud , Claire Fenouillet-Beranger , Claire Gallon , Aomar Halimaoui
IPC分类号： H01L21/00
CPC分类号： H01L29/7842 , H01L29/1033 , H01L29/66636 , H01L29/78618
摘要： Transistor type semiconducting device comprising: a substrate, an insulating layer comprising sidewalls formed on each part of the source zone and the drain zone, drain, channel and source zones, the channel zone being formed on the insulating layer and being strained by the drain and the source zones, between the side parts, a grid, separated from the channel by a grid insulator.
摘要翻译：晶体管型半导体器件包括：衬底，绝缘层，包括形成在源极区的每个部分上的侧壁和漏极区，漏极，沟道和源极区，沟道区形成在绝缘层上并被漏极应变，源区域之间，在侧面部分之间，通过栅极绝缘体与沟道隔开的栅极。

10. 发明授权

US09330957B2 Process for assembling two wafers and corresponding device 有权
标题翻译：组装两片晶圆及相应装置的工艺
公开(公告)号：US09330957B2
公开(公告)日：2016-05-03
申请号：US13330146
申请日：2011-12-19
申请人： Aomar Halimaoui , Marc Zussy
发明人： Aomar Halimaoui , Marc Zussy
IPC分类号： H01L21/762
CPC分类号： H01L29/0657 , H01L21/76251 , H01L29/16
摘要： A process for assembling a first wafer and a second wafer each bevelled on their peripheries includes excavating the bevelled peripheral part of at least one first side of the first wafer to create a deposit bordering the region excavated in the material of the first wafer. The first side and a second side of the second wafer are then bonded together.
摘要翻译：一种组装第一晶片和第二晶片的方法，每个在它们的周边上都是倾斜的，包括挖掘第一晶片的至少一个第一侧的斜切周边部分，以形成与在第一晶片的材料中挖出的区域接壤的沉积物。然后将第二晶片的第一面和第二面接合在一起。

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