专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070037412A1 IN-SITU ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：现场原子层沉积
公开(公告)号：US20070037412A1
公开(公告)日：2007-02-15
申请号：US11462234
申请日：2006-08-03
申请人： Anthony Dip , Sadao Sasaki , Michael Toeller , Kimberly Reid
发明人： Anthony Dip , Sadao Sasaki , Michael Toeller , Kimberly Reid
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/0236 , C23C16/405 , C23C16/45546 , C23C16/45553 , C23C16/56 , H01L21/02181 , H01L21/02205 , H01L21/02312 , H01L21/02318 , H01L21/02323 , H01L21/02337 , H01L21/3141 , H01L21/31645
摘要： An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system. The method comprises first loading a plurality of wafers into a process chamber, and then pre-treating the plurality of wafers in the process chamber with a first oxidizer. After pre-treating the wafers, and without removing the wafers from the process chamber, the method then comprises depositing HfO2 on the plurality of wafers by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).
摘要翻译：在间歇晶片处理系统中形成HfO 2高k电介质层的原位方法。该方法包括首先将多个晶片加载到处理室中，然后用第一氧化器预处理处理室中的多个晶片。在预处理晶片之后，并且不从处理室移除晶片，该方法然后包括通过原子层沉积在多个晶片上沉积HfO 2，其包括多个沉积循环，每个沉积循环循环，包括将处理室中的多个晶片交替暴露于第二氧化剂和铪前体。铪前体选自叔丁醇铪（HTB）或四乙基铪铪（TDEAH）。

2. 发明申请

US20050056219A1 Formation of a metal-containing film by sequential gas exposure in a batch type processing system 审中-公开
标题翻译：在间歇式处理系统中通过连续气体暴露形成含金属膜
公开(公告)号：US20050056219A1
公开(公告)日：2005-03-17
申请号：US10662522
申请日：2003-09-16
申请人： Anthony Dip , Michael Toeller , Kimberly Reid
发明人： Anthony Dip , Michael Toeller , Kimberly Reid
IPC分类号： C23C16/00 , C23C16/30 , C23C16/40 , H01L20060101
CPC分类号： C23C16/45531 , C23C16/308 , C23C16/401 , C23C16/405 , C23C16/45546
摘要： A method is provided for forming a metal-containing film on a substrate by a sequential gas exposure process in a batch type processing system. A metal-containing film can be formed on a substrate by providing a substrate in a process chamber of a batch type processing system, heating the substrate, sequentially flowing a pulse of a metal-containing precursor gas and a pulse of a reactant gas in the process chamber, and repeating the flowing processes until a metal-containing film with desired film properties is formed on the substrate. The method can form a metal-oxide film, for example HfO2 and ZrO2, a metal-oxynitride film, for example HfxOzNw, and HfxOzNw, a metal-silicate film, for example HfxSiyOz and ZrxSiyOz, and a nitrogen-containing metal-silicate film, for example HfxSiyOzNw and ZrxSiyOzNw. A processing tool containing a batch type processing system for forming a metal-containing film by a sequential gas exposure process is provided.
摘要翻译：提供了一种通过在间歇式处理系统中通过连续气体曝光工艺在基板上形成含金属膜的方法。通过在间歇式处理系统的处理室中设置基板，在衬底上形成含金属膜，加热衬底，顺序地将含金属的前体气体的脉冲和反应气体的脉冲流入并且重复流动过程，直到在基底上形成具有所需膜特性的含金属膜。该方法可以形成金属氧化物膜，例如HfO 2和ZrO 2，金属 - 氮氧化物膜，例如Hf x O z N w和Hf x O z N w，金属硅酸盐膜，例如Hf x Sb y O z和Zr x S y O z，以及含氮金属硅酸盐膜，例如HfxSiyOzNw和ZrxSiyOzNw。提供了一种包含用于通过连续气体曝光工艺形成含金属膜的间歇式处理系统的加工工具。

3. 发明授权

US07235440B2 Formation of ultra-thin oxide layers by self-limiting interfacial oxidation 有权
标题翻译：通过自限界面氧化形成超薄氧化层
公开(公告)号：US07235440B2
公开(公告)日：2007-06-26
申请号：US10630969
申请日：2003-07-31
申请人： David L O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
发明人： David L O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
IPC分类号： H01L21/8242
CPC分类号： H01L21/28194 , H01L21/02238 , H01L21/02255 , H01L21/28167 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.
摘要翻译：使用低压处理形成超薄氧化层，以实现衬底的自限制氧化并提供超薄氧化物。待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。本发明的一个实施例提供了Si衬底的自限制氧化，其导致厚度为约15A的SiO 2层，其中SiO 2层的厚度在基材上变化小于约1A。

4. 发明申请

US20050026459A1 Method of forming uniform ultra-thin oxynitride layers 有权
标题翻译：形成均匀的超薄氧氮化物层的方法
公开(公告)号：US20050026459A1
公开(公告)日：2005-02-03
申请号：US10630970
申请日：2003-07-31
申请人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
发明人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
IPC分类号： C23C16/30 , H01L21/00 , H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , C23C16/308 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/28202 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L21/67098 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.
摘要翻译：使用低压处理形成超薄氧氮化物层，以实现衬底的自限制氧化并提供超薄氧氮化物。要处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层或氮化物层，或者可以缺少初始介电层。处理可以使用间歇式处理室或单晶片处理室进行。

5. 发明授权

US07202186B2 Method of forming uniform ultra-thin oxynitride layers 有权
标题翻译：形成均匀的超薄氧氮化物层的方法
公开(公告)号：US07202186B2
公开(公告)日：2007-04-10
申请号：US10630970
申请日：2003-07-31
申请人： David L O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
发明人： David L O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , C23C16/308 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/28202 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L21/67098 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.
摘要翻译：使用低压处理形成超薄氧氮化物层，以实现衬底的自限制氧化并提供超薄氧氮化物。要处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层或氮化物层，或者可以缺少初始介电层。处理可以使用间歇式处理室或单晶片处理室进行。

6. 发明申请

US20050026453A1 Formation of ultra-thin oxide layers by self-limiting interfacial oxidation 有权
标题翻译：通过自限界面氧化形成超薄氧化层
公开(公告)号：US20050026453A1
公开(公告)日：2005-02-03
申请号：US10630969
申请日：2003-07-31
申请人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
发明人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/31
CPC分类号： H01L21/28194 , H01L21/02238 , H01L21/02255 , H01L21/28167 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.
摘要翻译：使用低压处理形成超薄氧化层，以实现衬底的自限制氧化并提供超薄氧化物。待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。本发明的一个实施例提供Si衬底的自限制氧化，其导致厚度为约15A的SiO 2层，其中SiO 2层的厚度在衬底上变化小于约1A。

7. 发明申请

US20080169534A1 REDUCED DEFECT SILICON OR SILICON GERMANIUM DEPOSITION IN MICRO-FEATURES 有权
标题翻译：在微特征中减少缺陷硅或硅锗沉积
公开(公告)号：US20080169534A1
公开(公告)日：2008-07-17
申请号：US11622204
申请日：2007-01-11
申请人： Anthony Dip , John Gumpher , Allen John Leith , Seungho Oh
发明人： Anthony Dip , John Gumpher , Allen John Leith , Seungho Oh
IPC分类号： H01L21/36 , H01L29/06
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/0245 , H01L21/0262 , H01L21/02639
摘要： A method is provided for reduced defect such as void free or reduced void Si or SiGe deposition in a micro-feature on a patterned substrate. The micro-feature includes a sidewall and the patterned substrate contains an isolation layer on the field area and on the sidewall and bottom of the micro-feature. The method includes forming a Si or SiGe seed layer at the bottom of the micro-feature, and at least partially filling the micro-feature from the bottom up by selectively growing Si or SiGe onto the Si or SiGe seed layer. According to one embodiment, the Si or SiGe seed layer is formed by depositing a conformal Si or SiGe layer onto the patterned substrate, removing the Si or SiGe layer from the field area, heat treating the Si or SiGe layer in the presence of H2 gas to transfer at least a portion of the Si or SiGe layer from the sidewall to the bottom of the micro-feature, and etching Si or SiGe residue from the field area and the sidewall.
摘要翻译：提供了一种减少缺陷的方法，例如在图案化衬底上的微特征中的无空隙或减少的空隙Si或SiGe沉积。微型特征包括侧壁，并且图案化衬底在场区域和微特征的侧壁和底部上包含隔离层。该方法包括在微特征的底部形成Si或SiGe种子层，并且通过在Si或SiGe种子层上选择性地生长Si或SiGe，从底部至少部分地填充微特征。根据一个实施例，Si或SiGe种子层通过将沉积的Si或SiGe层沉积在图案化的衬底上，从场区去除Si或SiGe层而形成，在H区存在下热处理Si或SiGe层，从而将Si或SiGe层的至少一部分从侧壁传递到微特征的底部，并且从场区域和侧壁蚀刻Si或SiGe残留物。

8. 发明申请

US20070259534A1 IN-SITU FORMATION OF OXIDIZED ALUMINUM NITRIDE FILMS 有权
标题翻译：氧化氮化铝膜的现场形成
公开(公告)号：US20070259534A1
公开(公告)日：2007-11-08
申请号：US11745278
申请日：2007-05-07
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/303 , C23C16/56
摘要： A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.
摘要翻译：提供了一种在衬底上原位形成薄的氧化AlN膜的方法。该方法包括在处理室中提供衬底，在衬底上沉积AlN膜，以及暴露于含氮和含氧气体后对AlN膜进行后处理。后处理增加了AlN膜的介电常数，而AlN膜厚度基本上没有增加。该方法还可以包括在AlN沉积之前预处理衬底，在后处理之前或之后对AlN膜进行后退火，或者两者。

9. 发明申请

US20070042570A1 Sequential deposition process for forming Si-containing films 失效
标题翻译：用于形成含Si膜的顺序沉积工艺
公开(公告)号：US20070042570A1
公开(公告)日：2007-02-22
申请号：US11206199
申请日：2005-08-18
申请人： Anthony Dip , Allen Leith , Seungho Oh
发明人： Anthony Dip , Allen Leith , Seungho Oh
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02532 , C23C16/24 , C23C16/28 , C23C16/4408 , C23C16/45523 , C30B25/02 , C30B29/06 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/3185
摘要： A method is provided for forming a Si film in sequential deposition process. The method includes providing a substrate in a process chamber, forming a chlorinated Si film by exposing the substrate to a chlorinated silane gas, and dry etching the chlorinated Si film to reduce the chlorine content of the Si film. The Si film may be deposited selectively or non-selectively on the substrate and the deposition may be self-limiting or non-self-limiting. Other embodiments provide a method for forming SiGe films in a sequential deposition process.
摘要翻译：提供了用于在顺序沉积工艺中形成Si膜的方法。该方法包括在处理室中提供衬底，通过将衬底暴露于氯化硅烷气体形成氯化Si膜，并干蚀刻氯化Si膜以降低Si膜的氯含量。 Si膜可以选择性地或非选择性沉积在衬底上，并且沉积可以是自限制性的或非限制性的。其他实施例提供了在顺序沉积工艺中形成SiGe膜的方法。

10. 发明申请

US20050221001A1 Method for extending time between chamber cleaning processes 有权
标题翻译：在室清洁过程之间延长时间的方法
公开(公告)号：US20050221001A1
公开(公告)日：2005-10-06
申请号：US10814713
申请日：2004-03-31
申请人： Raymond Joe , John Gumpher , Anthony Dip
发明人： Raymond Joe , John Gumpher , Anthony Dip
IPC分类号： C23C16/34 , C23C16/44 , H01L21/318 , C23C16/00 , B32B9/00
CPC分类号： C23C16/4404 , H01L21/3185
摘要： A method for extending time between chamber cleaning processes in a process chamber of a processing system. A particle-reducing film is formed on a chamber component in the process chamber to reduce particle formation in the process chamber during substrate processing, at least one substrate is introduced into the process chamber, a manufacturing process is performed in the process chamber, and the at least one substrate is removed from the process chamber. The particle-reducing film may be deposited on a clean chamber component or on a material deposit formed on a chamber component. Alternatively, the particle-reducing film may be formed by chemically modifying at least a portion of a material deposit on a chamber component. The particle-reducing film may be formed after each manufacturing process or at selected intervals after multiple manufacturing processes.
摘要翻译：一种用于在处理系统的处理室中延长室清洁过程之间的时间的方法。在处理室中的腔室部件上形成颗粒减少膜，以减少衬底处理期间处理室中的颗粒形成，至少一个衬底被引入到处理室中，在处理室中执行制造工艺，从处理室移除至少一个基板。颗粒减少膜可以沉积在清洁室部件上或者形成在室部件上的材料沉积物上。或者，可以通过化学改变室内部件上的材料沉积物的至少一部分来形成颗粒减少膜。减少颗粒的膜可以在每个制造过程之后形成，或者在多个制造过程之后以选定的间隔形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式