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1. 发明授权

US07491563B2 Nitridation of STI fill oxide to prevent the loss of STI fill oxide during manufacturing process 失效
标题翻译： STI填充氧化物的氮化，以防止制造过程中STI填充氧化物的损失
公开(公告)号：US07491563B2
公开(公告)日：2009-02-17
申请号：US11955751
申请日：2007-12-13
申请人： Fred Buehrer , Anthony I. Chou , Toshiharu Furukawa , Renee T Mo
发明人： Fred Buehrer , Anthony I. Chou , Toshiharu Furukawa , Renee T Mo
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L21/76232 , H01L21/76224 , H01L21/823481
摘要： A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.
摘要翻译：一种用于半导体器件的改进的浅沟槽隔离（STI）结构的方法和结构。 STI结构包含STI填充物的氮氧化物顶层。可选地，STI结构包括邻近硅沟槽壁的STI填充的氮氧化物边缘。在硅沟槽壁的上边缘附近的氮氧化物边缘的区域包括与氮氧化物边缘的其它区域相比相对较厚并且含有较高浓度的氮的氧氮化物角。氮氧化物的特征是限制了STI填充高度损失，并且还减少了STI填充物中由于氢氟酸蚀刻和其它制造工艺引起的硅衬底的形成。限制STI填充高度损失和形成纹理改善了STI结构的功能。形成STI结构的方法与包括化学机械抛光（CMP）在内的标准半导体器件制造工艺特别兼容，因为该方法包括使用纯二氧化硅STI填充和等离子体和热氮化工艺来形成氧氮化物顶层和氮氧化物边缘，包括氮氧化物拐角，STI填充。

2. 发明申请

US20050026453A1 Formation of ultra-thin oxide layers by self-limiting interfacial oxidation 有权
标题翻译：通过自限界面氧化形成超薄氧化层
公开(公告)号：US20050026453A1
公开(公告)日：2005-02-03
申请号：US10630969
申请日：2003-07-31
申请人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
发明人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/31
CPC分类号： H01L21/28194 , H01L21/02238 , H01L21/02255 , H01L21/28167 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.
摘要翻译：使用低压处理形成超薄氧化层，以实现衬底的自限制氧化并提供超薄氧化物。待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。本发明的一个实施例提供Si衬底的自限制氧化，其导致厚度为约15A的SiO 2层，其中SiO 2层的厚度在衬底上变化小于约1A。

3. 发明申请

US20080090379A1 Nitridation of STI Fill Oxide to Prevent the Loss of STI Fill Oxide During Manufacturing Process 失效
标题翻译：氮化硅填充氧化物，以防止在制造过程中STI填充氧化物的损失
公开(公告)号：US20080090379A1
公开(公告)日：2008-04-17
申请号：US11955751
申请日：2007-12-13
申请人： Fred Buehrer , Anthony Chou , Toshiharu Furukawa , Renee Mo
发明人： Fred Buehrer , Anthony Chou , Toshiharu Furukawa , Renee Mo
IPC分类号： H01L21/76
CPC分类号： H01L21/76232 , H01L21/76224 , H01L21/823481
摘要： A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.
摘要翻译：一种用于半导体器件的改进的浅沟槽隔离（STI）结构的方法和结构。 STI结构包含STI填充物的氮氧化物顶层。可选地，STI结构包括邻近硅沟槽壁的STI填充的氮氧化物边缘。在硅沟槽壁的上边缘附近的氮氧化物边缘的区域包括与氮氧化物边缘的其它区域相比相对较厚并且含有较高浓度的氮的氧氮化物角。氮氧化物的特征是限制了STI填充高度损失，并且还减少了STI填充物中由于氢氟酸蚀刻和其它制造工艺引起的硅衬底的形成。限制STI填充高度损失和形成纹理改善了STI结构的功能。形成STI结构的方法与包括化学机械抛光（CMP）在内的标准半导体器件制造工艺特别兼容，因为该方法包括使用纯二氧化硅STI填充和等离子体和热氮化工艺来形成氧氮化物顶层和氮氧化物边缘，包括氮氧化物拐角，STI填充。

4. 发明申请

US20050026459A1 Method of forming uniform ultra-thin oxynitride layers 有权
标题翻译：形成均匀的超薄氧氮化物层的方法
公开(公告)号：US20050026459A1
公开(公告)日：2005-02-03
申请号：US10630970
申请日：2003-07-31
申请人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
发明人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
IPC分类号： C23C16/30 , H01L21/00 , H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , C23C16/308 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/28202 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L21/67098 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.
摘要翻译：使用低压处理形成超薄氧氮化物层，以实现衬底的自限制氧化并提供超薄氧氮化物。要处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层或氮化物层，或者可以缺少初始介电层。处理可以使用间歇式处理室或单晶片处理室进行。

5. 发明授权

US07491964B2 Nitridation of STI fill oxide to prevent the loss of STI fill oxide during manufacturing process 失效
公开(公告)号：US07491964B2
公开(公告)日：2009-02-17
申请号：US10905683
申请日：2005-01-17
申请人： Fred Buehrer , Anthony I. Chou , Toshiharu Furukawa , Renee T. Mo
发明人： Fred Buehrer , Anthony I. Chou , Toshiharu Furukawa , Renee T. Mo
IPC分类号： H01L29/00
CPC分类号： H01L21/76232 , H01L21/76224 , H01L21/823481
摘要： A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.

6. 发明授权

US07235440B2 Formation of ultra-thin oxide layers by self-limiting interfacial oxidation 有权
标题翻译：通过自限界面氧化形成超薄氧化层
公开(公告)号：US07235440B2
公开(公告)日：2007-06-26
申请号：US10630969
申请日：2003-07-31
申请人： David L O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
发明人： David L O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
IPC分类号： H01L21/8242
CPC分类号： H01L21/28194 , H01L21/02238 , H01L21/02255 , H01L21/28167 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.
摘要翻译：使用低压处理形成超薄氧化层，以实现衬底的自限制氧化并提供超薄氧化物。待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。本发明的一个实施例提供了Si衬底的自限制氧化，其导致厚度为约15A的SiO 2层，其中SiO 2层的厚度在基材上变化小于约1A。

7. 发明授权

US07202186B2 Method of forming uniform ultra-thin oxynitride layers 有权
标题翻译：形成均匀的超薄氧氮化物层的方法
公开(公告)号：US07202186B2
公开(公告)日：2007-04-10
申请号：US10630970
申请日：2003-07-31
申请人： David L O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
发明人： David L O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , C23C16/308 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/28202 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L21/67098 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.
摘要翻译：使用低压处理形成超薄氧氮化物层，以实现衬底的自限制氧化并提供超薄氧氮化物。要处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层或氮化物层，或者可以缺少初始介电层。处理可以使用间歇式处理室或单晶片处理室进行。

8. 发明申请

US20060160322A1 NITRIDATION OF STI FILL OXIDE TO PREVENT THE LOSS OF STI FILL OXIDE DURING MANUFACTURING PROCESS 失效
标题翻译：氮化硅氧化物在制造过程中防止氧化硅损失
公开(公告)号：US20060160322A1
公开(公告)日：2006-07-20
申请号：US10905683
申请日：2005-01-17
申请人： Fred Buehrer , Anthony Chou , Toshiharu Furukawa , Renee Mo
发明人： Fred Buehrer , Anthony Chou , Toshiharu Furukawa , Renee Mo
IPC分类号： H01L21/76
CPC分类号： H01L21/76232 , H01L21/76224 , H01L21/823481
摘要： A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.
摘要翻译：一种用于半导体器件的改进的浅沟槽隔离（STI）结构的方法和结构。 STI结构包含STI填充物的氮氧化物顶层。可选地，STI结构包括邻近硅沟槽壁的STI填充的氮氧化物边缘。在硅沟槽壁的上边缘附近的氮氧化物边缘的区域包括与氮氧化物边缘的其它区域相比相对较厚并且含有较高浓度的氮的氧氮化物角。氮氧化物的特征是限制了STI填充高度损失，并且还减少了STI填充物中由于氢氟酸蚀刻和其它制造工艺引起的硅衬底的形成。限制STI填充高度损失和形成纹理改善了STI结构的功能。形成STI结构的方法与包括化学机械抛光（CMP）在内的标准半导体器件制造工艺特别兼容，因为该方法包括使用纯二氧化硅STI填充和等离子体和热氮化工艺来形成氧氮化物顶层和氮氧化物边缘，包括氮氧化物拐角，STI填充。

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