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1. 发明授权

US08288176B2 Method for manufacturing a photovoltaic cell 失效
标题翻译：光伏电池的制造方法
公开(公告)号：US08288176B2
公开(公告)日：2012-10-16
申请号：US13239814
申请日：2011-09-22
申请人： Andreas Meisel , Michael Burrows , Homer Antoniadis
发明人： Andreas Meisel , Michael Burrows , Homer Antoniadis
IPC分类号： H01L21/66
CPC分类号： H01L31/1804 , H01L22/12 , H01L31/022425 , Y02E10/547 , Y02P70/521
摘要： The disclosure relates to a method of aligning a set of patterns on a substrate, which includes depositing on the substrate's surface a set of silicon nanoparticles, which includes a set of ligand molecules including a set of carbon atoms. The method involves forming a first set of regions where the nanoparticles are deposited, while the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of nanoparticles into a thin film to form a set of silicon-organic zones on the substrate's surface, wherein the first and the second set of regions have respectively first and second reflectivity values, such that the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1.
摘要翻译：本公开涉及一种在衬底上对准一组图案的方法，其包括在衬底表面上沉积一组硅纳米颗粒，其包括一组包含一组碳原子的配体分子。该方法包括形成沉积纳米颗粒的第一组区域，而衬底表面的其余部分限定第二组区域。该方法还包括将该组纳米颗粒致密化成薄膜以在基底表面上形成一组硅 - 有机区域，其中第一和第二组区域分别具有第一和第二反射率值，使得第一反射率值的第二反射率值大于约1.1。

2. 发明申请

US20120083054A1 METHODS AND APPARATUS FOR ALIGNING A SET OF PATTERNS ON A SILICON SUBSTRATE 失效
标题翻译：用于对准硅基板上的一组图案的方法和装置
公开(公告)号：US20120083054A1
公开(公告)日：2012-04-05
申请号：US13239814
申请日：2011-09-22
申请人： Andreas Meisel , Michael Burrows , Homer Antoniadis
发明人： Andreas Meisel , Michael Burrows , Homer Antoniadis
IPC分类号： H01L21/66
CPC分类号： H01L31/1804 , H01L22/12 , H01L31/022425 , Y02E10/547 , Y02P70/521
摘要： The disclosure relates to a method of aligning a set of patterns on a substrate, which includes depositing on the substrate's surface a set of silicon nanoparticles, which includes a set of ligand molecules including a set of carbon atoms. The method involves forming a first set of regions where the nanoparticles are deposited, while the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of nanoparticles into a thin film to form a set of silicon-organic zones on the substrate's surface, wherein the first and the second set of regions have respectively first and second reflectivity values, such that the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1.
摘要翻译：本公开涉及一种在衬底上对准一组图案的方法，其包括在衬底表面上沉积一组硅纳米颗粒，其包括一组包含一组碳原子的配体分子。该方法包括形成沉积纳米颗粒的第一组区域，而衬底表面的其余部分限定第二组区域。该方法还包括将该组纳米颗粒致密化成薄膜以在基底表面上形成一组硅 - 有机区域，其中第一和第二组区域分别具有第一和第二反射率值，使得第一反射率值的第二反射率值大于约1.1。

3. 发明授权

US08048814B2 Methods and apparatus for aligning a set of patterns on a silicon substrate 有权
标题翻译：用于在硅衬底上对准一组图案的方法和装置
公开(公告)号：US08048814B2
公开(公告)日：2011-11-01
申请号：US12468540
申请日：2009-05-19
申请人： Andreas Meisel , Michael Burrows , Homer Antoniadis
发明人： Andreas Meisel , Michael Burrows , Homer Antoniadis
IPC分类号： H01L21/47
CPC分类号： H01L31/1804 , H01L22/12 , H01L31/022425 , Y02E10/547 , Y02P70/521
摘要： A method of aligning a set of patterns on a substrate, the substrate including a substrate surface, is disclosed. The method includes depositing a set of silicon nanoparticles on the substrate surface, the set of nanoparticles including a set of ligand molecules including a set of carbon atoms, wherein a first set of regions is formed where the silicon nanoparticles are deposited and the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of silicon nanoparticles into a thin film wherein a set of silicon-organic zones are formed on the substrate surface, wherein the first set of regions has a first reflectivity value and the second set of regions has a second reflectivity value. The method further includes illuminating the substrate surface with an illumination source, wherein the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1.
摘要翻译：公开了一种在衬底上对准一组图案的方法，该衬底包括衬底表面。该方法包括在衬底表面上沉积一组硅纳米颗粒，所述纳米颗粒组包括一组包含一组碳原子的配体分子，其中形成第一组区域，其中沉积硅纳米颗粒，其余部分衬底表面限定第二组区域。所述方法还包括将所述一组硅纳米颗粒致密化成薄膜，其中在基底表面上形成一组硅 - 有机区，其中所述第一组区具有第一反射率值，并且所述第二组区具有第二反射率值。该方法还包括用照明源照射衬底表面，其中第二反射率值与第一反射率值的比值大于约1.1。

4. 发明申请

US20100136718A1 METHODS AND APPARATUS FOR ALIGNING A SET OF PATTERNS ON A SILICON SUBSTRATE 有权
标题翻译：用于对准硅基板上的一组图案的方法和装置
公开(公告)号：US20100136718A1
公开(公告)日：2010-06-03
申请号：US12468540
申请日：2009-05-19
申请人： Andreas Meisel , Michael Burrows , Homer Antoniadis
发明人： Andreas Meisel , Michael Burrows , Homer Antoniadis
IPC分类号： H01L21/66 , B05C19/00
CPC分类号： H01L31/1804 , H01L22/12 , H01L31/022425 , Y02E10/547 , Y02P70/521
摘要： A method of aligning a set of patterns on a substrate, the substrate including a substrate surface, is disclosed. The method includes depositing a set of silicon nanoparticles on the substrate surface, the set of nanoparticles including a set of ligand molecules including a set of carbon atoms, wherein a first set of regions is formed where the silicon nanoparticles are deposited and the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of silicon nanoparticles into a thin film wherein a set of silicon-organic zones are formed on the substrate surface, wherein the first set of regions has a first reflectivity value and the second set of regions has a second reflectivity value. The method further includes illuminating the substrate surface with an illumination source, wherein the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1.
摘要翻译：公开了一种在衬底上对准一组图案的方法，该衬底包括衬底表面。该方法包括在衬底表面上沉积一组硅纳米颗粒，所述纳米颗粒组包括一组包含一组碳原子的配体分子，其中形成第一组区域，其中沉积硅纳米颗粒，其余部分衬底表面限定第二组区域。所述方法还包括将所述一组硅纳米颗粒致密化成薄膜，其中在基底表面上形成一组硅 - 有机区，其中所述第一组区具有第一反射率值，并且所述第二组区具有第二反射率值。该方法还包括用照明源照射衬底表面，其中第二反射率值与第一反射率值的比值大于约1.1。

5. 发明申请

US20080305619A1 METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING 审中-公开
标题翻译：使用激光加工形成IV族半导体结的方法
公开(公告)号：US20080305619A1
公开(公告)日：2008-12-11
申请号：US12114141
申请日：2008-05-02
申请人： Francesco Lemmi , Andreas Meisel , Homer Antoniadis
发明人： Francesco Lemmi , Andreas Meisel , Homer Antoniadis
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： H01L31/182 , H01L21/0237 , H01L21/02524 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/02675 , H01L31/03682 , H01L31/03921 , H01L31/068 , H01L31/077 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness.
摘要翻译：公开了一种在衬底上形成IV族半导体结的方法。该方法包括在衬底上沉积第一组IV族半导体纳米颗粒。该方法还包括将第一激光波长的第一激光，第一注量，第一脉冲持续时间，第一次重复和第一重复率应用于第一组IV族半导体纳米颗粒，以形成第一致密化膜，其具有第一厚度，其中选择第一激光波长和第一注量以将第一激光器的第一深度分布限制到第一厚度。该方法还包括在第一致密化膜上沉积第二组IV族半导体纳米颗粒。该方法还包括将第二激光器以第二激光波长，第二注量，第二脉冲持续时间，第二数量的重复和第二重复率施加到第二组IV族半导体纳米颗粒以形成第二致密化膜，其具有第二厚度，其中选择第二激光波长和第二注量以将第二激光器的第二深度分布限制到第二厚度。

6. 发明授权

US07923368B2 Junction formation on wafer substrates using group IV nanoparticles 有权
标题翻译：使用IV族纳米粒子在晶片衬底上形成结
公开(公告)号：US07923368B2
公开(公告)日：2011-04-12
申请号：US12109684
申请日：2008-04-25
申请人： Mason Terry , Homer Antoniadis , Dmitry Poplavskyy , Maxim Kelman
发明人： Mason Terry , Homer Antoniadis , Dmitry Poplavskyy , Maxim Kelman
IPC分类号： H01L21/44
CPC分类号： H01L21/2256 , H01L21/02532 , H01L21/02573 , H01L21/02601 , H01L21/02628 , H01L21/2257 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.
摘要翻译：公开了形成扩散区域的方法。该方法包括在晶片的表面上沉积纳米颗粒油墨以形成非致密化薄膜，纳米颗粒油墨具有一组纳米颗粒，其中该组纳米颗粒中的至少一些纳米颗粒包括其中的掺杂剂原子。该方法还包括将非致密化薄膜加热至第一温度并且在第一时间段内从沉积的纳米颗粒油墨中除去溶剂; 以及将所述非致密化薄膜加热至第二温度并且持续第二时间以形成致密的薄膜，其中至少一些所述掺杂剂原子扩散到所述晶片中以形成所述扩散区域。

7. 发明授权

US07521340B2 Methods for creating a densified group IV semiconductor nanoparticle thin film 失效
标题翻译：用于形成致密化的IV族半导体纳米颗粒薄膜的方法
公开(公告)号：US07521340B2
公开(公告)日：2009-04-21
申请号：US11950024
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/20
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种在腔室中形成致密的纳米颗粒薄膜的方法。该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑。该方法还包括将多孔压块暴露于HF蒸气中约2分钟至约20分钟的第二时间段，并将多孔压块加热至约25℃至约60℃的第二温度; 并将所述多孔压块加热至约100℃至约1000℃之间的第三温度和约5分钟至约10小时的第三时间; 其中形成致密的纳米颗粒薄膜。

8. 发明授权

US06989806B2 Current limiting device 有权
标题翻译：限流装置
公开(公告)号：US06989806B2
公开(公告)日：2006-01-24
申请号：US10300157
申请日：2002-11-20
申请人： Franky So , Homer Antoniadis , Ian Millard , Vung Vo
发明人： Franky So , Homer Antoniadis , Ian Millard , Vung Vo
IPC分类号： G09G3/32
CPC分类号： G09G3/3216 , G09G2330/04 , G09G2330/10 , H01L27/3225 , H01L51/5212 , H01L51/5228 , H01L2251/568
摘要： An embodiment of the present invention pertains to an electronic device such as a passive matrix display, an alpha-numeric display, a detector array, or a solar cell array. The electronic device includes multiple organic optoelectronic devices and one or more of these organic optoelectronic devices are protected from shorts. Each of the one or more organic optoelectronic devices that is protected from a short has one of its electrodes coupled to a first current limiting device and optionally has another electrode coupled to a second current limiting device. Also, one of the electrodes of that organic optoelectronic device, the first current limiting device, or the second current limiting device is patterned.
摘要翻译：本发明的实施例涉及诸如无源矩阵显示器，字母数字显示器，检测器阵列或太阳能电池阵列之类的电子设备。电子器件包括多个有机光电子器件，并且这些有机光电子器件中的一个或多个保护不受短路。被短路保护的一个或多个有机光电子器件中的每一个都具有耦合到第一限流器件的电极中的一个，并且可选地具有耦合到第二限流器件的另一个电极。此外，该有机光电子器件的电极之一，第一限流器件或第二限流器件被图案化。

9. 发明授权

US06680570B2 Polymer organic light emitting device with improved color control 有权
标题翻译：聚合物有机发光装置，具有改进的颜色控制
公开(公告)号：US06680570B2
公开(公告)日：2004-01-20
申请号：US09814381
申请日：2001-03-21
申请人： Daniel B. Roitman , Homer Antoniadis
发明人： Daniel B. Roitman , Homer Antoniadis
IPC分类号： H01J162
CPC分类号： H01L51/5265 , H01L51/5012
摘要： An OLED for emitting light at a predetermined peak wavelength, &lgr;. The OLED includes an anode layer, a cathode layer and an electroluminescent layer constructed from an organic light emitting compound that generates light, including light having a wavelength equal to &lgr;, by the recombination of holes and electrons. The electroluminescent layer is electrically connected to the anode layer and the cathode layer and is located between the anode and cathode layers. The OLED includes a first reflector and a second reflector, displaced from one another. The anode layer or cathode layer can serve as one of the reflectors. A spacer layer constructed from a material that is transparent at &lgr; is included between the reflectors and has a thickness that is adjusted such that the optical path length between the first and second reflectors is equal to N &lgr;/2, where N is a positive integer.
摘要翻译：用于发射预定峰值波长λ的OLED。 OLED包括阳极层，阴极层和由有机发光化合物构成的电致发光层，其通过空穴和电子的复合产生包括波长等于λ的光的光。电致发光层电连接到阳极层和阴极层并位于阳极和阴极层之间。 OLED包括彼此移位的第一反射器和第二反射器。阳极层或阴极层可以用作反射器之一。由λ构成的材料构成的间隔层包含在反射体之间，其厚度被调整为使得第一和第二反射器之间的光程长度等于Nλ/ 2，其中N是正整数。

10. 发明授权

US6004685A LED doped with periflanthene for efficient red emission 失效
标题翻译：掺杂有紫外线的LED用于有效的红色发射
公开(公告)号：US6004685A
公开(公告)日：1999-12-21
申请号：US997143
申请日：1997-12-23
申请人： Homer Antoniadis , Allen J. Bard
发明人： Homer Antoniadis , Allen J. Bard
IPC分类号： C09K11/06 , H01L51/00 , H01L51/30 , H01L51/50 , H05B33/12 , H05B33/14
CPC分类号： H01L51/5012 , C09K11/06 , H01L51/0056 , H01L51/0059 , H01L51/006 , H01L51/0078 , H01L51/0081 , Y10S428/917
摘要： An OLED having a cathode constructed from a first conducting layer. An electron transport layer constructed from a first electron transport material overlays the cathode. An electroluminescent layer constructed from the first electron transport material doped with dibenzotetraphenylperiflanthene overlays the electron transport layer. A hole transport layer constructed from a first hole transport material overlays the electroluminescent layer. The anode overlays the hole transport layer. In one embodiment of the invention, a second hole transport layer constructed from a second hole transport material is sandwiched between the anode and the first hole transport layer. In a third embodiment of the invention, a second electron transport layer constructed from a second electron transport material is sandwiched between the electroluminescent layer and the first hole transport layer.
摘要翻译：一种具有由第一导电层构成的阴极的OLED。由第一电子传输材料构成的电子传输层覆盖阴极。由掺杂有二苯并四苯并噻吩的第一电子传输材料构成的电致发光层覆盖电子传输层。由第一空穴传输材料构成的空穴传输层覆盖电致发光层。阳极覆盖空穴传输层。在本发明的一个实施例中，由第二空穴传输材料构成的第二空穴传输层夹在阳极和第一空穴传输层之间。在本发明的第三实施例中，由第二电子传输材料构成的第二电子传输层夹在电致发光层和第一空穴传输层之间。

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