专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07071506B2 Device for inhibiting hydrogen damage in ferroelectric capacitor devices 失效
标题翻译：用于抑制铁电电容器件中的氢损伤的装置
公开(公告)号：US07071506B2
公开(公告)日：2006-07-04
申请号：US10655757
申请日：2003-09-05
申请人： Bum-Ki Moon , Karl Hornik , Haoren Zhuang , Ulrich Egger , Jenny Lian , Andreas Hilliger
发明人： Bum-Ki Moon , Karl Hornik , Haoren Zhuang , Ulrich Egger , Jenny Lian , Andreas Hilliger
IPC分类号： H01L29/76
CPC分类号： H01L28/57 , H01L27/0805 , H01L27/11507
摘要： A ferroelectric capacitor device comprises a substrate, a contact plug passing through the substrate, a first electrode formed on the substrate, the first electrode being electrically connected to said plug, a ferroelectric layer formed on the first electrode, a second electrode formed on the ferroelectric layer, one or more first encapsulation layers on the second electrode, the encapsulation layers extending over the device, and one or more hydrogen storage material layers on the encapsulation layers. One or more second encapsulation layers may be formed on the one or more hydrogen storage material layers.
摘要翻译：铁电电容器装置包括基板，穿过基板的接触插塞，形成在基板上的第一电极，第一电极电连接到所述插头，形成在第一电极上的铁电层，形成在铁电体上的第二电极层，在第二电极上的一个或多个第一封装层，在器件上延伸的封装层以及封装层上的一个或多个储氢材料层。一个或多个第二封装层可以形成在一个或多个储氢材料层上。

2. 发明授权

US07002196B2 Ferroelectric capacitor devices and FeRAM devices 失效
标题翻译：铁电电容器件和FeRAM器件
公开(公告)号：US07002196B2
公开(公告)日：2006-02-21
申请号：US10713239
申请日：2003-11-13
申请人： Andreas Hilliger , Jenny Lian
发明人： Andreas Hilliger , Jenny Lian
IPC分类号： H01L29/76
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L28/65
摘要： A ferroelectric capacitor device, such as an FeRAM device is formed of a substrate having one or more contact plugs extending therethrough, and a first interlayer dielectric layer formed on the substrate. A spacer layer is formed on the first interlayer dielectric layer, a first oxygen barrier layer is formed on the spacer layer and a buffer layer is formed on the first oxygen barrier layer. A layer of liner material is formed on the buffer layer between the buffer layer and the contact plugs and a dielectric layer is sandwiched between a first electrode and a second electrode. A second oxygen barrier layer is applied to the device. The spacer layer should prevent any oxidation from reaching the interface between the liner material and the contact plugs as this interface is located beneath the first oxygen barrier layer. As a result, the electrical contact is not damaged.
摘要翻译：诸如FeRAM器件的铁电电容器器件由具有延伸穿过其中的一个或多个接触插塞的衬底和形成在衬底上的第一层间电介质层形成。在第一层间电介质层上形成间隔层，在间隔层上形成第一氧阻隔层，在第一氧阻隔层上形成缓冲层。在缓冲层和接触塞之间的缓冲层上形成一层衬垫材料，并且介电层夹在第一电极和第二电极之间。将第二氧阻挡层施加到该装置。当该界面位于第一氧阻隔层下方时，间隔层应防止任何氧化到达衬垫材料和接触塞之间的界面。因此，电气接触不会损坏。

3. 发明申请

US20050051819A1 Device and method for inhibiting hydrogen damage in ferroelectric capacitor devices 失效
标题翻译：用于抑制铁电电容器件中的氢损伤的装置和方法
公开(公告)号：US20050051819A1
公开(公告)日：2005-03-10
申请号：US10655757
申请日：2003-09-05
申请人： Bum-Ki Moon , Karl Hornik , Haoren Zhuang , Ulrich Egger , Jenny Lian , Andreas Hilliger
发明人： Bum-Ki Moon , Karl Hornik , Haoren Zhuang , Ulrich Egger , Jenny Lian , Andreas Hilliger
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/08 , H01L29/76
CPC分类号： H01L28/57 , H01L27/0805 , H01L27/11507
摘要： A ferroelectric capacitor device comprises a substrate, a contact plug passing through the substrate, a first electrode formed on the substrate, the first electrode being electrically connected to said plug, a ferroelectric layer formed on the first electrode, a second electrode formed on the ferroelectric layer, one or more first encapsulation layers on the second electrode, the encapsulation layers extending over the device, and one or more hydrogen storage material layers on the encapsulation layers. One or more second encapsulation layers may be formed on the one or more hydrogen storage material layers.
摘要翻译：铁电电容器装置包括基板，穿过基板的接触插塞，形成在基板上的第一电极，第一电极电连接到所述插头，形成在第一电极上的铁电层，形成在铁电体上的第二电极层，在第二电极上的一个或多个第一封装层，在器件上延伸的封装层以及封装层上的一个或多个储氢材料层。一个或多个第二封装层可以形成在一个或多个储氢材料层上。

4. 发明授权

US06946735B2 Side-wall barrier structure and method of fabrication 有权
标题翻译：侧壁屏障结构及其制造方法
公开(公告)号：US06946735B2
公开(公告)日：2005-09-20
申请号：US10307257
申请日：2002-11-29
申请人： Stefan Gernhardt , Jenny Lian , Andreas Hilliger , Rainer Bruchhaus , Uwe Wellhausen , Nicolas Nagel
发明人： Stefan Gernhardt , Jenny Lian , Andreas Hilliger , Rainer Bruchhaus , Uwe Wellhausen , Nicolas Nagel
IPC分类号： H01L21/02 , H01L21/768 , H01L23/48
CPC分类号： H01L21/7687 , H01L21/76877 , H01L28/60
摘要： The invention includes a wafer having a poly silicon plug passing through a CP-contact. The poly silicon plug is formed from a relatively heavily doped poly silicon layer and a relatively lightly doped poly silicon layer. The relatively lightly doped poly silicon layer passes through the relatively heavily doped poly silicon layer to extend beyond the relatively heavily doped poly silicon layer towards the surface of the wafer. A barrier layer covers top and side walls of the relatively lightly doped poly silicon layer for reducing oxidation at the surface of the poly silicon plug. The wafer is fabricated by depositing a relatively heavily doped poly silicon layer in a CP-contact, depositing a relatively lightly doped poly silicon layer to pass through the relatively heavily doped poly silicon layer, and depositing a barrier layer to cover top and side walls of the relatively lightly doped poly silicon layer to reduce oxidation at the surface of the poly silicon plug.
摘要翻译：本发明包括具有通过CP接触的多硅插头的晶片。多晶硅插头由相对高掺杂的多晶硅层和相对轻掺杂的多晶硅层形成。相对轻掺杂的多晶硅层通过相对重掺杂的多晶硅层延伸超过相对重掺杂的多晶硅层朝向晶片的表面。阻挡层覆盖相对较轻掺杂的多晶硅层的顶壁和侧壁，用于减少多晶硅插头表面的氧化。通过在CP接触中沉积相对重掺杂的多晶硅层来制造晶片，沉积相对轻掺杂的多晶硅层以通过相对重掺杂的多晶硅层，以及沉积阻挡层以覆盖顶部和侧壁相对轻掺杂的多晶硅层，以减少在多晶硅塞的表面处的氧化。

5. 发明申请

US20050106759A1 Device and method for forming ferroelectric capacitor devices and FeRAM devices 失效
标题翻译：用于形成铁电电容器器件和FeRAM器件的器件和方法
公开(公告)号：US20050106759A1
公开(公告)日：2005-05-19
申请号：US10713239
申请日：2003-11-13
申请人： Andreas Hilliger , Jenny Lian
发明人： Andreas Hilliger , Jenny Lian
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L28/65
摘要： A ferroelectric capacitor device, such as an FeRAM device is formed of a substrate having one or more contact plugs extending therethrough, and a first interlayer dielectric layer formed on the substrate. A spacer layer is formed on the first interlayer dielectric layer, a first oxygen barrier layer is formed on the spacer layer and a buffer layer is formed on the first oxygen barrier layer. A layer of liner material is formed on the buffer layer between the buffer layer and the contact plugs and a dielectric layer is sandwiched between a first electrode and a second electrode. A second oxygen barrier layer is applied to the device. The spacer layer should prevent any oxidation from reaching the interface between the liner material and the contact plugs as this interface is located beneath the first oxygen barrier layer. As a result, the electrical contact is not damaged.
摘要翻译：诸如FeRAM器件的铁电电容器器件由具有延伸穿过其中的一个或多个接触插塞的衬底和形成在衬底上的第一层间电介质层形成。在第一层间电介质层上形成间隔层，在间隔层上形成第一氧阻隔层，在第一氧阻隔层上形成缓冲层。在缓冲层和接触塞之间的缓冲层上形成一层衬垫材料，并且介电层夹在第一电极和第二电极之间。将第二氧阻挡层施加到该装置。当该界面位于第一氧阻隔层下方时，间隔层应防止任何氧化到达衬垫材料和接触塞之间的界面。因此，电气接触不会损坏。

6. 发明授权

US07041551B2 Device and a method for forming a capacitor device 失效
标题翻译：装置及形成电容器装置的方法
公开(公告)号：US07041551B2
公开(公告)日：2006-05-09
申请号：US10677099
申请日：2003-09-30
申请人： Haoren Zhuang , Nicolas Nagel , Jenny Lian , Rainer Bruchhaus
发明人： Haoren Zhuang , Nicolas Nagel , Jenny Lian , Rainer Bruchhaus
IPC分类号： H01L21/8242
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/92
摘要： A device and method for forming a capacitor device comprises forming a substrate, forming a first interlayer dielectric layer on the substrate and forming two or more contact plugs through the substrate. A conducting layer is formed on the first interlayer dielectric layer and an electrode is formed on alternate ones of the contact plugs by etching the conducting layer. The etched electrodes are then coated with a ferroelectric layer. The ferroelectric layer is etched from the surfaces separating the contact plugs and additional electrodes are created by filling the spaces between the electrodes on alternate ones of the contact plugs with a conductive material to establish electrical contact between the plugs and the electrodes.
摘要翻译：用于形成电容器器件的器件和方法包括形成衬底，在衬底上形成第一层间电介质层，并通过衬底形成两个或更多个接触插塞。在第一层间电介质层上形成导电层，通过蚀刻导电层，在交替的接触插塞上形成电极。然后用铁电层涂覆蚀刻的电极。从分离接触塞的表面蚀刻铁电层，并且通过用导电材料填充交替的接触插塞上的电极之间的空间来产生附加电极，以建立插塞和电极之间的电接触。

7. 发明授权

US06734057B2 Method of patterning capacitors and capacitors made thereby 失效
标题翻译：图案化电容器和电容器的方法
公开(公告)号：US06734057B2
公开(公告)日：2004-05-11
申请号：US10260229
申请日：2002-09-27
申请人： Jenny Lian , Haoren Zhuang , Ulrich Egger , Karl Hornik
发明人： Jenny Lian , Haoren Zhuang , Ulrich Egger , Karl Hornik
IPC分类号： H01L218242
CPC分类号： H01L28/55 , H01L21/31122
摘要： A method of forming a ferroelectric capacitor, in particular for use in a FeRAM or high-k DRAM application, and a capacitor made by the method. The method comprises forming a first layer which is patterned, for example by a reactive ion etching method. A ferroelectric material is then formed over the patterned first layer. The morphology of the ferroelectric material will be dependent upon the patterning of the first layer. The ferroeletric layer is then patterned, for example using a wet etching or a reactive ion etching method. The etching will depend upon the morphology of the ferroelectric layer. After etching the ferroelectric layer, a conductive layer is provided over the ferroelectric layer to form a first electrode of the capacitor. If the first layer is a conductive layer, this forms the second electrode. If the first layer is a non-conductive layer, the conductive layer is patterned to form both the first and second electrodes.
摘要翻译：形成铁电电容器的方法，特别是用于FeRAM或高k DRAM应用的方法，以及由该方法制成的电容器。该方法包括形成图案化的第一层，例如通过反应离子蚀刻方法。然后在图案化的第一层上形成铁电材料。铁电材料的形态将取决于第一层的图案化。然后将铁素体层图案化，例如使用湿蚀刻或反应离子蚀刻方法。蚀刻将取决于铁电层的形态。在对铁电体层进行蚀刻之后，在铁电层上设置导电层，形成电容器的第一电极。如果第一层是导电层，则形成第二电极。如果第一层是非导电层，则导电层被图案化以形成第一和第二电极。

8. 发明申请

US20050067649A1 Method for producing a ferroelectric capacitor and a ferroelectric capacitor device 失效
标题翻译：铁电电容器和铁电电容器器件的制造方法
公开(公告)号：US20050067649A1
公开(公告)日：2005-03-31
申请号：US10672306
申请日：2003-09-26
申请人： Jenny Lian , Ulrich Egger , Haoren Zhuang
发明人： Jenny Lian , Ulrich Egger , Haoren Zhuang
IPC分类号： H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/8246 , H01L27/115 , H01L21/00 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L28/60 , H01L21/31122 , H01L21/32136 , H01L21/32139 , H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/75
摘要： A method for fabricating a device and a device, such as a ferroelectric capacitor, having a substrate, a contact plug through the substrate, a first barrier layer on the substrate, a first electrode on the first barrier layer, a dielectric layer on the first electrode, and a second electrode on the dielectric layer, comprises etching the second electrode and the dielectric layer of the device using a first hardmask, to shape the second electrode and the dielectric layer. The first hardmask is then removed and one or more encapsulating layers are applied to the second electrode and the dielectric layer. A further hardmask is applied to the one or more encapsulating layers. The first electrode is then etched according to the second hardmask down to the first barrier layer and the second hardmask is then removed from the one or more encapsulating layers.
摘要翻译：一种制造器件和器件的方法，例如铁电电容器，具有衬底，通过衬底的接触插塞，衬底上的第一阻挡层，第一阻挡层上的第一电极，第一阻挡层上的电介质层电极和第二电极，包括使用第一硬掩模蚀刻该器件的第二电极和介电层，以使第二电极和电介质层成型。然后去除第一硬掩模，并且将一个或多个封装层施加到第二电极和电介质层。另外的硬掩模应用于一个或多个封装层。然后根据第二硬掩模将第一电极蚀刻到第一阻挡层，然后从一个或多个封装层移除第二硬掩模。

9. 发明授权

US06365328B1 Semiconductor structure and manufacturing method 有权
标题翻译：半导体结构及制造方法
公开(公告)号：US06365328B1
公开(公告)日：2002-04-02
申请号：US09522883
申请日：2000-03-10
申请人： Hua Shen , David Kotecki , Satish Athavale , Jenny Lian , Laertis Economikos , Fen F. Jamin , Gerhard Kunkel , Nirmal Chaudhary
发明人： Hua Shen , David Kotecki , Satish Athavale , Jenny Lian , Laertis Economikos , Fen F. Jamin , Gerhard Kunkel , Nirmal Chaudhary
IPC分类号： G03F700
CPC分类号： H01L21/7687 , H01L21/76885 , H01L27/10852 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A method for forming an electrode. The method includes forming a conductive plug through a first dielectric layer. The plug extends from an upper surface of the first dielectric layer to a contact region in a semiconductor substrate. The electrode is formed photolithographically, misalignment of a mask registration in the photolithography resulting in exposing surface portions of the barrier contact. A second dielectric layer is deposited over the first dielectric layer, over side portions and top portions of the formed electrode, and over the exposed portions of barrier contact. A sacrificial material is provided on portions of the second dielectric layer disposed on lower sides of the, electrode, on portions of the second dielectric layer disposed on the first dielectric layer, and on said exposed portions of the barrier contact while exposing portions of the second dielectric layer on the top portions and upper side portions of the formed electrode. The exposed portions of the second dielectric layer are removed while leaving the portions of the second dielectric layer on the exposed portions of the barrier contact. A material is deposited over exposed portions of the first electrode and over remaining portions of the second dielectric layer in an oxidizing environment. A second electrode is formed for the storage element over the material. In forming a capacitor storage element, the portion of the second dielectric layer on the barrier contact prevents oxidation of the barrier contact during the material formation process.
摘要翻译：一种形成电极的方法。该方法包括通过第一电介质层形成导电插塞。插头从第一电介质层的上表面延伸到半导体衬底中的接触区域。光刻地形成电极，光刻中的掩模配准不对准，导致暴露屏障接触的表面部分。第二电介质层沉积在第一电介质层上，在形成的电极的侧面部分和顶部上方以及屏蔽接触的暴露部分之上。在设置在第一电介质层上的第二电介质层的部分上的第二电介质层的设置在电极的下侧的部分上以及在屏障接触的所述暴露部分上暴露第二电介质层的部分的牺牲材料在形成的电极的顶部和上侧部分上的介电层。第二介电层的暴露部分被去除，同时将第二介电层的部分留在屏障接触的暴露部分上。材料在氧化环境中沉积在第一电极的暴露部分和第二电介质层的剩余部分上。在材料上形成用于存储元件的第二电极。在形成电容器存储元件时，屏障接触部分的第二电介质层在材料形成过程中防止了屏障接触的氧化。

10. 发明申请

US20050074979A1 Method for forming ferrocapacitors and FeRAM devices 失效
标题翻译：形成铁电体和FeRAM器件的方法
公开(公告)号：US20050074979A1
公开(公告)日：2005-04-07
申请号：US10678758
申请日：2003-10-02
申请人： Haoren Zhuang , Ulrich Egger , Rainer Bruchhaus , Karl Hornik , Jenny Lian , Stefan Gernhardt
发明人： Haoren Zhuang , Ulrich Egger , Rainer Bruchhaus , Karl Hornik , Jenny Lian , Stefan Gernhardt
IPC分类号： H01L21/02 , H01L21/311 , H01L21/8246 , H01L27/115 , H01L21/302 , H01L21/461
CPC分类号： H01L27/11502 , H01L21/31122 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： Ferrocapacitors having a vertical structure are formed by a process in which a ferroelectric layer is deposited over an insulator. In a first etching stage, the ferroelectric material is etched to form openings in it, leaving the insulating layer substantially intact. Then a conductive layer is deposited into the openings formed in the ferroelectric layer, forming electrodes on the sides of the openings. Further etching is performed to form gaps in the Al2O3 layer, for making connections to conductive elements beneath it. Thus, by the time the second etching step is performed; there are already electrodes overlying the sides of the ferroelectric material, without insulating fences in between.
摘要翻译：具有垂直结构的铁电体通过在绝缘体上沉积铁电层的工艺形成。在第一蚀刻阶段中，铁电材料被蚀刻以在其中形成开口，从而使绝缘层基本上完好无损。然后，将导电层沉积到形成在铁电层中的开口中，在开口的侧面形成电极。进行进一步蚀刻以在Al 2 O 3层中形成间隙，用于连接到其下方的导电元件。因此，在进行第二蚀刻步骤的时候，已经有电极覆盖在铁电材料的两侧，其间没有绝缘栅栏。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式