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1. 发明授权

US07304435B2 Device for confinement of a plasma within a volume 有权
标题翻译：在体积内限制血浆的装置
公开(公告)号：US07304435B2
公开(公告)日：2007-12-04
申请号：US10510521
申请日：2003-02-27
申请人： Ana Lacoste , Yves Alban-Marie Arnal , Stéphane Bechu , Jacques Pelletier
发明人： Ana Lacoste , Yves Alban-Marie Arnal , Stéphane Bechu , Jacques Pelletier
IPC分类号： H01J7/24
CPC分类号： H01J37/32623 , H01J37/32688
摘要： A device of a plasma (5) for confinement of a plasma within a housing (1), comprising creation means for creating a magnetic field, said means being a series of permanent magnets (3) for creation of a magnetic field presenting an alternating multi-polar magnetic structure to the plasma and the magnets (3) restrict the plasma to a large volume, the magnets begin distributed in a discontinuous around the volume end said magnets (3) arc discharge, a distance within the housing at a separation from the walls of the housing by means of support shafts (4). The changes above have been provided to improve the clarification of the claim language and claims have been amended to correct a typographical error. Since the changes are minor and are intended merely to improve the legibility of the claims, obtaining authorization from application was not viewed as necessary.
摘要翻译：一种用于在壳体（1）内限制等离子体的等离子体（5）的装置，包括用于产生磁场的创建装置，所述装置是一系列永磁体（3），用于产生呈现交替多等离子体的磁极结构和磁体（3）将等离子体限制在大体积上，磁体开始分布在容积端周围不连续的位置，所述磁体（3）电弧放电，与壳体内的距离通过支撑轴（4）的外壳壁。已经提供了上述更改来改进声明语言的澄清，并且修改了索赔以纠正排印错误。由于这些变更是次要的，而仅仅是为了提高权利要求的可读性，所以没有必要从应用程序获得授权。

2. 发明授权

US06727656B1 Power splitter for plasma device 有权
标题翻译：等离子装置功率分配器
公开(公告)号：US06727656B1
公开(公告)日：2004-04-27
申请号：US10088326
申请日：2002-06-18
申请人： Jacques Pelletier , Ana Lacoste , Thierry Léon Lagarde , Michel Moisan , Yves Alban-Marie Arnal , Zenon Zakrzewski
发明人： Jacques Pelletier , Ana Lacoste , Thierry Léon Lagarde , Michel Moisan , Yves Alban-Marie Arnal , Zenon Zakrzewski
IPC分类号： H01J724
CPC分类号： H01J37/32211 , H01J37/32192 , H01J37/32311 , H01P5/16
摘要： The invention concerns a system including a microwave generator and a rectangular guide connected with the generator. The system is adapted to operate in fundamental (H10) or transverse electrical (TE10) mode, and associated with means providing a standing wave pattern. The system also includes many power connectors arranged in the guide at zones of maximum amplitude for one of the components of the electromagnetic field for splitting the generator power. The power connectors are adjusted so that the sum of their reduced admittance levels brought to the splitter input formed by the guide is in a single unit and many sources, respectively connected to a connector of the guide, via insulating means ensuring a power transmission of the connector to the source without reflecting towards the connector and a device adapting impedance of each source, located downstream of the insulating means, between the latter and associated source.
摘要翻译：本发明涉及一种包括微波发生器和与发生器连接的矩形导向器的系统。该系统适于在基本（H10）或横向电（TE10）模式下操作，并且与提供驻波模式的装置相关联。该系统还包括布置在引导件中的最大振幅区域的许多电力连接器，用于分离发电机功率的电磁场的部件之一。电源连接器被调节，使得其被引导到由引导件形成的分离器输入的降低的导纳水平的总和是分别连接到引导件的连接器的单个单元和许多源，经由绝缘装置确保连接器到源，而不向连接器反射，并且设备适应位于绝缘装置下游的源的阻抗，在后者和相关源之间。

3. 发明授权

US07911120B2 Source for providing an electron beam of settable power 失效
标题翻译：用于提供可设置电源的电子束的源
公开(公告)号：US07911120B2
公开(公告)日：2011-03-22
申请号：US10497894
申请日：2002-12-06
申请人： Ana Lacoste , Jacques Pelletier , Yves Alban-Marie Arnal
发明人： Ana Lacoste , Jacques Pelletier , Yves Alban-Marie Arnal
IPC分类号： H01J7/24
CPC分类号： H01J37/077 , H01J3/025 , H01J2237/0041
摘要： The invention concerns a source supplying an adjustable energy electron beam, comprising a plasma chamber (P) consisting of an enclosure (1) having an inner surface of a first value (S1) and an extraction gate (2) having a surface of a second value (S2), the gate potential being different from that of the enclosure and adjustable. The invention is characterized in that the plasma is excited and confined in multipolar or multidipolar magnetic structures, the ratio of the second value (S2) over the first value (S1) being close to: D=1/β √2πme/mi exp (−½), wherein: β is the proportion of electrons of the plasma P, me the electron mass, and mi is the mass of positively charged ions.
摘要翻译：本发明涉及提供可调节能量电子束的源，包括由具有第一值（S1）的内表面的外壳（1）和具有第二值的表面的抽出栅极（2）组成的等离子体室（P）值（S2），门电位与外壳不同，可调。本发明的特征在于等离子体被激发并限制在多极或多极磁结构中，第二值（S2）超过第一值（S1）的比接近于：D = 1 /＆bgr; √2＆pgr; me / mi exp（-½），其中：＆bgr; 是等离子体P的电子的比例，me是电子质量，mi是带正电荷的离子的质量。

4. 发明授权

US07585421B2 Method of producing a sheet comprising through pores and the application thereof in the production of micronic and submicronic filters 有权
标题翻译：制造包含通孔的片材的方法及其在微型和亚微米级过滤器的生产中的应用
公开(公告)号：US07585421B2
公开(公告)日：2009-09-08
申请号：US10501103
申请日：2003-01-07
申请人： Thierry Lagarde , Jacques Pelletier , Ana Lacoste , Yves Alban-Marie Arnal
发明人： Thierry Lagarde , Jacques Pelletier , Ana Lacoste , Yves Alban-Marie Arnal
IPC分类号： H01B13/00
CPC分类号： B01D67/0034 , B01D39/16 , B01D67/003 , B01D67/0062 , B01D69/02 , B01D71/022 , B01D2323/34 , B01D2325/021 , G03F7/0015 , Y10T428/24273
摘要： The method comprises the following steps: preparing a sheet having thickness of 5 μm to a few tens of micrometers, suitable for being etched by a lithographic operation; making a mask on a face of the sheet, the mask presenting etching selectivity S of at least 5; depositing a layer of photosensitive resin on the mask; making through holes in the layer of resin by photolithography; etching through the mask via the pores in the layer of resin; and anisotropically etching through the sheet from the pores in the mask in order to make pores in the sheet having an aspect ratio greater than 5. The invention is applicable to fabricating micron and sub-micron filters.
摘要翻译：该方法包括以下步骤：制备厚度为5μm至几十微米的片，适于通过光刻操作进行蚀刻; 在片材的表面上形成掩模，掩模呈现蚀刻选择性S为至少5; 在掩模上沉积感光树脂层; 通过光刻法在树脂层中形成通孔; 通过掩模通过树脂层中的孔蚀刻; 并且从掩模中的孔各向异性地蚀刻片材，以便在长宽比大于5的片材中形成孔。本发明可应用于制造微米和亚微米过滤器。

5. 发明授权

US07574974B2 Device for production of a plasma sheet 有权
标题翻译：用于制造等离子体片的装置
公开(公告)号：US07574974B2
公开(公告)日：2009-08-18
申请号：US10516998
申请日：2003-06-03
申请人： Thierry Léon Lagarde , Ana Lacoste , Jacques Pelletier , Yves Alban-Marie Arnal
发明人： Thierry Léon Lagarde , Ana Lacoste , Jacques Pelletier , Yves Alban-Marie Arnal
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/32192 , H01J37/32678 , H05H1/46
摘要： The invention relates to a device for the production of a plasma (16) within a housing comprising means for the generation of energy in the microwave spectrum, for the excitation of the plasma, said means comprise at least one basic plasma excitation device with a coaxial applicator (4) of microwave energy, one of the ends of which is connected to a production source (7) of microwave energy, the other end (8) of which is directed to the gas to be excited within the housing. The device is characterised in that each basic plasma excitation device is arranged in the wall (3) of the housing, each applicator (4) having a central core (5) which is essentially flush with the wall of the housing. The central core and the thickness of the wall (3) of the housing are separated by a space (6) coaxial to the central core, said space being totally filled, at least at the end of each applicator, by a dielectric material (14), such that said material is essentially flush with the level of the wall of the housing.
摘要翻译：本发明涉及一种用于在壳体内生产等离子体（16）的装置，包括用于在微波光谱中产生能量的装置，用于激发等离子体，所述装置包括至少一个具有同轴的等离子体激发装置微波能量的施加器（4），其一端连接到微波能量的生产源（7），另一端（8）被引导到在壳体内被激发的气体。该装置的特征在于，每个基本等离子体激发装置布置在壳体的壁（3）中，每个施加器（4）具有基本上与壳体的壁齐平的中心芯（5）。壳体的壁（3）的中心芯和厚度由与中心芯同轴的空间（6）分开，所述空间至少在每个施加器的端部由介电材料（14）完全填充），使得所述材料基本上与壳体的壁的水平面齐平。

6. 发明授权

US08736176B2 Device and method for producing and/or confining a plasma 有权
标题翻译：用于产生和/或限制等离子体的装置和方法
公开(公告)号：US08736176B2
公开(公告)日：2014-05-27
申请号：US13126535
申请日：2009-10-28
申请人： Jacques Pelletier , Stéphane Bechu , Alexandre Bes , Ana Lacoste
发明人： Jacques Pelletier , Stéphane Bechu , Alexandre Bes , Ana Lacoste
IPC分类号： H01J7/24
CPC分类号： H05H1/46 , H01J37/32623 , H01J37/3266
摘要： The invention relates to a device for producing and/or confining a plasma, said device comprising a chamber in the space of which the plasma is produced and/or confined, said chamber including a wall defining a housing inside the chamber and encompassing said space, wherein said device is characterized in that it comprises at least one assembly for producing and/or confining plasma, each assembly being composed of magnets having only an axial magnetization direction and being recessed in the wall defining the housing, so that the magnetization direction of all the magnets defining each assembly is substantially perpendicular to the housing defined by the wall and so that the assembly is substantially symmetrical to the housing, wherein the magnetic field lines do not extend through the wall of the chamber. The invention also relates to a method for producing and/or confining a plasma.
摘要翻译：本发明涉及一种用于产生和/或限制等离子体的装置，所述装置包括在其空间中产生和/或限制等离子体的腔室，所述腔室包括限定腔室内的壳体并且包围所述空间的壁，其特征在于，所述装置的特征在于，其包括用于产生和/或限制等离子体的至少一个组件，每个组件由仅具有轴向磁化方向且在限定壳体的壁中凹陷的磁体组成，使得所有的磁化方向限定每个组件的磁体基本上垂直于由壁限定的壳体，并且使得组件与壳体基本上对称，其中磁场线不延伸穿过室的壁。本发明还涉及用于产生和/或限制等离子体的方法。

7. 发明授权

US08324814B2 Device and method for producing and/or confining a plasma 有权
标题翻译：用于产生和/或限制等离子体的装置和方法
公开(公告)号：US08324814B2
公开(公告)日：2012-12-04
申请号：US12374478
申请日：2007-07-04
申请人： Jacques Pelletier , Ana LaCoste , Stéphane Bechu
发明人： Jacques Pelletier , Ana LaCoste , Stéphane Bechu
IPC分类号： H01J7/24 , C23C16/50
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32623 , H01J37/32678
摘要： The invention concerns a device for producing and/or confining a plasma (10), comprising a recipient (13) within the volume of which the plasma is produced or confined, wherein said recipient comprises a wall (1) defining a lining (15) at the inside of the recipient and encompassing the volume, characterized in that it comprises at least one annular magnet (30), centered around a normal (14) with respect to the lining, having radial magnetization direction, such that the magnetization direction is significantly perpendicular to said normal to the lining. The invention also concerns a method for producing and/or confining a plasma.
摘要翻译：本发明涉及一种用于生产和/或限制等离子体（10）的装置，其包括其体积内的接收器（13）等离子体的产生或限制，其中所述接收器包括限定衬里（15）的壁（1）在容纳物的内部并且包围体积，其特征在于，其包括至少一个围绕相对于衬里的法线（14）居中的环形磁体（30），具有径向磁化方向，使得磁化方向显着垂直于正常的衬里。本发明还涉及一种用于产生和/或限制等离子体的方法。

8. 发明申请

US20110215722A1 DEVICE AND METHOD FOR PRODUCING AND/OR CONFINING A PLASMA 有权
标题翻译：用于生产和/或限制等离子体的装置和方法
公开(公告)号：US20110215722A1
公开(公告)日：2011-09-08
申请号：US13126535
申请日：2009-10-28
申请人： Jacques Pelletier , Stéphane Bechu , Alexandre Bes , Ana Lacoste
发明人： Jacques Pelletier , Stéphane Bechu , Alexandre Bes , Ana Lacoste
IPC分类号： H05H1/50
CPC分类号： H05H1/46 , H01J37/32623 , H01J37/3266
摘要： The invention relates to a device for producing and/or confining a plasma (10), said device comprising a chamber (13) in the space of which the plasma is produced and/or confined, said chamber (13) including a wall (1) defining a housing (15) inside the chamber (15) and encompassing said space, wherein said device is characterised in that it comprises at least one assembly (30) for producing and/or confining plasma, each assembly (30) being composed of magnets (3) having only an axial magnetisation direction and being recessed in the wall (1) defining the housing, so that the magnetisation direction of all the magnets (3) defining each assembly (30) is substantially perpendicular to the housing (15) defined by the wall (1) and so that the assembly (30) is substantially symmetrical to the housing, wherein the magnetic field lines (5) do not extend through the wall (1) of the chamber. The invention also relates to a method for producing and/or confining a plasma.
摘要翻译：本发明涉及一种用于制造和/或限制等离子体（10）的装置，所述装置包括在其空间中产生和/或限制等离子体的室（13），所述室（13）包括壁（1））限定所述腔室（15）内部并且包围所述空间的壳体（15），其中所述装置的特征在于其包括用于产生和/或限制等离子体的至少一个组件（30），每个组件（30）由磁体（3）仅具有轴向磁化方向并且凹入限定壳体的壁（1）中，使得限定每个组件（30）的所有磁体（3）的磁化方向基本上垂直于壳体（15），由所述壁（1）限定并且使得所述组件（30）与所述壳体基本上对称，其中所述磁场线（5）不延伸通过所述腔室的壁（1）。本发明还涉及用于产生和/或限制等离子体的方法。

9. 发明申请

US20100109532A1 DEVICE AND METHOD FOR PRODUCING AND/OR CONFINING A PLASMA 有权
标题翻译：用于生产和/或限制等离子体的装置和方法
公开(公告)号：US20100109532A1
公开(公告)日：2010-05-06
申请号：US12374478
申请日：2007-07-04
申请人： Jacques Pelletier , Ana Lacoste , Stéphane Bechu
发明人： Jacques Pelletier , Ana Lacoste , Stéphane Bechu
IPC分类号： H05H1/24
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32623 , H01J37/32678
摘要： The invention concerns a device for producing and/or confining a plasma (10), comprising a recipient (13) within the volume of which the plasma is produced or confined, wherein said recipient comprises a wall (1) defining a lining (15) at the inside of the recipient and encompassing the volume, characterized in that it comprises at least one annular magnet (30), centered around a normal (14) with respect to the lining, having radial magnetization direction, such that the magnetization direction is significantly perpendicular to said normal to the lining. The invention also concerns a method for producing and/or confining a plasma.
摘要翻译：本发明涉及一种用于生产和/或限制等离子体（10）的装置，其包括其体积内的接收器（13）等离子体的产生或限制，其中所述接收器包括限定衬里（15）的壁（1）在容纳物的内部并且包围体积，其特征在于，其包括至少一个围绕相对于衬里的法线（14）居中的环形磁体（30），具有径向磁化方向，使得磁化方向显着垂直于正常的衬里。本发明还涉及一种用于产生和/或限制等离子体的方法。

10. 发明申请

US20050062387A1 Electron source 失效
标题翻译：电子源
公开(公告)号：US20050062387A1
公开(公告)日：2005-03-24
申请号：US10497894
申请日：2002-12-06
申请人： Ana Lacoste , Jacques Pelletier , Yves Arnal
发明人： Ana Lacoste , Jacques Pelletier , Yves Arnal
IPC分类号： H05H1/46 , H01J3/02 , H01J37/077 , H01J17/26 , H01J27/16
CPC分类号： H01J37/077 , H01J3/025 , H01J2237/0041
摘要： The invention concerns a source supplying an adjustable energy electron beam, comprising a plasma chamber (P) consisting of an enclosure (1) having an inner surface of a first value (S1) and an extraction gate (2) having a surface of a second value (S2), the gate potential being different from that of the enclosure and adjustable. The invention is characterized in that the plasma is excited and confined in multipolar or multidipolar magnetic structures, the ratio of the second value (S2) over the first value (S1) being close to: D=1/β {square root}2πcme/mi exp (−½), wherein: β is the proportion of electrons of the plasma P, me the electron mass, and mi is the mass of positively charged ions.
摘要翻译：本发明涉及提供可调节能量电子束的源，包括由具有第一值（S1）的内表面的外壳（1）和具有第二值的表面的抽出栅极（2）组成的等离子体室（P）值（S2），门电位与外壳不同，可调。本发明的特征在于，等离子体被激发并限制在多极或多极磁结构中，第二值（S2）超过第一值（S1）的比接近于：D = 1 /β（平方根）2picme / mi exp（-½），其中：β是等离子体P的电子比例，me是电子质量，mi是带正电荷的离子的质量。

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