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1. 发明申请

US20090246844A1 Methods for the production of ethanol 审中-公开
标题翻译：生产乙醇的方法
公开(公告)号：US20090246844A1
公开(公告)日：2009-10-01
申请号：US12386858
申请日：2009-04-23
申请人： Nikolai Khramtsov , Alexander Amerik , Steven A. Henck
发明人： Nikolai Khramtsov , Alexander Amerik , Steven A. Henck
IPC分类号： C12P7/06 , C12N1/19
CPC分类号： C12P7/16 , Y02E50/10 , Y02E50/16 , Y02E50/17
摘要： Embodiments of the present invention include methods for the production of ethanol, by a consolidated bioprocessing approach for the conversion of cellulosic material. According to some embodiments, recombinant microbial host cells are provided, preferably S. cerevisiae, that are capable of converting cellulosic material to ethanol and include cellulase genes. According to some embodiments, recombinant microbial host cells are provided, preferably S. cerevisiae, that are capable of converting hemicellulosic material to ethanol and include cellulase genes and at least one gene for the conversion of a pentose sugar.
摘要翻译：本发明的实施方案包括通过用于转化纤维素材料的固体生物处理方法来生产乙醇的方法。根据一些实施方案，提供重组微生物宿主细胞，优选酿酒酵母，其能够将纤维素材料转化为乙醇并且包括纤维素酶基因。根据一些实施方案，提供重组微生物宿主细胞，优选酿酒酵母，其能够将半纤维素材料转化为乙醇并且包括纤维素酶基因和用于转化戊糖的至少一个基因。

2. 发明申请

US20100129885A1 Methods for the production of n-butanol 审中-公开
标题翻译：正丁醇生产方法
公开(公告)号：US20100129885A1
公开(公告)日：2010-05-27
申请号：US12589715
申请日：2009-10-26
申请人： Nikolai Khramtsov , Alexander Amerik , Bruce E. Taillon , Steven A. Henck
发明人： Nikolai Khramtsov , Alexander Amerik , Bruce E. Taillon , Steven A. Henck
IPC分类号： C12P7/16 , C12N1/00 , C12N1/15 , C12N1/19 , C12N1/21
CPC分类号： C12P7/16 , Y02E50/10
摘要： Embodiments of the present invention include methods for the production of four carbon alcohols, specifically n-butanol, by a consolidated bioprocessing approach for the conversion of cellulosic material to the desired end product. According to some embodiments, recombinant microbial host cells are provided, preferably S. cerevisiae, that are capable of converting cellulosic material to butanol and include butanol biosynthetic pathway genes and cellulase genes. According to some embodiments, recombinant microbial host cells are provided, preferably S. cerevisiae, that are capable of converting hemicellulosic material to butanol and include cellulase genes, butanol biosynthetic pathway genes and at least one gene for the conversion of a pentose sugar.
摘要翻译：本发明的实施方案包括通过用于将纤维素材料转化为所需最终产物的固体生物处理方法来生产四种碳醇，特别是正丁醇的方法。根据一些实施方案，提供重组微生物宿主细胞，优选酿酒酵母，其能够将纤维素材料转化为丁醇，并且包括丁醇生物合成途径基因和纤维素酶基因。根据一些实施方案，提供重组微生物宿主细胞，优选酿酒酵母，其能够将半纤维素材料转化为丁醇，并且包括纤维素酶基因，丁醇生物合成途径基因和用于转化戊糖的至少一个基因。

3. 发明申请

US20110124075A1 CONSTRUCTION OF GENETICALLY TRACTABLE INDUSTRIAL YEAST STRAINS 审中-公开
标题翻译：基因工程YYAST菌株的构建
公开(公告)号：US20110124075A1
公开(公告)日：2011-05-26
申请号：US12625275
申请日：2009-11-24
申请人： Alexander Amerik , Steven A. Henck
发明人： Alexander Amerik , Steven A. Henck
IPC分类号： C12P1/02 , C12N1/18 , C12N1/19
CPC分类号： C12P7/10 , C12N15/01 , C12R1/865 , Y02E50/16
摘要： Embodiments of the present invention include genetically tractable industrial yeast strains and methods for their construction. In certain preferred embodiments, the genetically tractable industrial yeast strain is a Saccharomyces cerevisiae strain, such as a derivative of the K1-V1116 wine yeast strain.
摘要翻译：本发明的实施方案包括可遗传的工业酵母菌株及其构建方法。在某些优选实施方案中，可遗传易处理的工业酵母菌株是酿酒酵母菌株，例如K1-V1116葡萄酒酵母菌株的衍生物。

4. 发明授权

US5249865A Interferometric temperature measurement system and method 失效
标题翻译：干涉测温系统及方法
公开(公告)号：US5249865A
公开(公告)日：1993-10-05
申请号：US874658
申请日：1992-04-27
申请人： Ajit P. Paranjpe , Steven A. Henck , Walter M. Duncan
发明人： Ajit P. Paranjpe , Steven A. Henck , Walter M. Duncan
IPC分类号： G01K11/00 , G01J5/58
CPC分类号： G01J5/58 , G01J5/0003 , G01J5/0007 , G01K11/00
摘要： An interferonmetric temperature measurement system is described for determining the temperature of a sample. The system comprises three detectors for measuring various intensities of a beam of electromagnetic radiation reflected off the sample and circuitry for determining the temperature from the intensities. The detectors measure the intensity of the beam and two orthogonally polarized components of the beam.
摘要翻译：描述了用于确定样品的温度的干涉测量温度测量系统。该系统包括三个检测器，用于测量样品反射的电磁辐射束的各种强度和用于根据强度确定温度的电路。检测器测量光束的强度和光束的两个正交极化分量。

5. 发明授权

US06475722B1 Surface treatments for DNA processing devices 失效
标题翻译： DNA处理装置的表面处理
公开(公告)号：US06475722B1
公开(公告)日：2002-11-05
申请号：US09192605
申请日：1998-11-16
申请人： Steven A. Henck
发明人： Steven A. Henck
IPC分类号： C12Q168
CPC分类号： C12Q1/68 , B01L3/502707 , B01L2200/12 , B01L2300/0819 , B01L2300/163 , Y10T29/49117
摘要： The present invention discloses methodologies for the treatment of the surface(s) of DNA processing devices so as to greatly reduce DNA adsorption to the surface(s) exposed to the DNA-containing media. These aforementioned surface treatments include: (i) the deposition of thin-films of silicon-rich, silicon nitride and of hydroxyl-containing,low-temperature silicon oxide and (ii) the washing of surface with a basic, oxidative wash solution. The present invention also discloses the fabrication of DNA processing devices utilizing surface(s) treated by the methods described above. Such DNA processing devices include, for example, miniaturized electrophoresis and other DNA separation devices, miniaturized PCR reactors, and the like. The present invention further discloses methodologies for testing the degree of DNA adherence to a given surface. Additionally, the methodologies and devices of the present invention are also applicable to the processing of nucleic acids, in generally.
摘要翻译：本发明公开了用于处理DNA加工装置表面的方法，以便大大减少对暴露于含DNA培养基的表面的DNA吸附。这些上述表面处理包括：（i）沉积富硅，氮化硅和含羟基的低温氧化硅的薄膜，和（ii）用碱性氧化性洗涤溶液洗涤表面。本发明还公开了利用通过上述方法处理的表面的DNA加工装置的制造。这样的DNA处理装置包括例如微型电泳和其他DNA分离装置，小型化PCR反应器等。本发明进一步公开了测试给定表面的DNA粘附程度的方法。此外，本发明的方法和装置一般也适用于核酸的加工。

6. 发明授权

US6072617A Micro mechanical device with memory metal component 失效
标题翻译：具有记忆金属部件的微机械装置
公开(公告)号：US6072617A
公开(公告)日：2000-06-06
申请号：US975547
申请日：1997-11-20
申请人： Steven A. Henck
发明人： Steven A. Henck
IPC分类号： C21D9/56 , C22F1/00 , G02B26/08 , G02B26/00
CPC分类号： C22F1/006 , G02B26/0833 , G02B26/0841
摘要： A method of preventing permanent deformation of deflecting metal components of micro mechanical devices, such as hinges (12) of mirror elements (10) of a digital micro mirror device. The hinges (12) are made from a memory metal capable of undergoing austenite/martensite phase transitions. If the device is operated and the hinges (12) become mechanically distorted, the hinges (12) can be heated to cause a transition to the austenite phase and a return to their original shape.
摘要翻译：一种防止微机械装置的偏转金属部件的永久变形的方法，例如数字微镜装置的镜元件（10）的铰链（12）。铰链（12）由能够经历奥氏体/马氏体相变的记忆金属制成。如果设备被操作并且铰链（12）变得机械扭曲，则铰链（12）可以被加热以导致向奥氏体相的转变并返回其原始形状。

7. 发明授权

US5503707A Method and apparatus for process endpoint prediction based on actual thickness measurements 失效
标题翻译：基于实际厚度测量的过程端点预测方法和装置
公开(公告)号：US5503707A
公开(公告)日：1996-04-02
申请号：US125954
申请日：1993-09-22
申请人： Sonny Maung , Stephanie W. Butler , Steven A. Henck
发明人： Sonny Maung , Stephanie W. Butler , Steven A. Henck
IPC分类号： C23C14/54 , G01B11/06 , H01L21/306
CPC分类号： H01J37/32963 , C23C14/547 , G01B11/0641
摘要： In accordance with one aspect of the present invention, a method is provided for predicting the endpoint time of a semiconductor process for a layer of a wafer (14). The endpoint time is the time at which a predetermined thickness of the layer occurs. A layer thickness, calculated for a first sample time, is received. It is then determined whether or not the layer thickness lies within a predetermined range. If the layer thickness does lie within the predetermined range, it is used to update a forecasted process rate. The forecasted process rate is used to predict the endpoint time. The endpoint time is used to control the semiconductor process so that the layer of wafer (14) is formed having the predetermined thickness.
摘要翻译：根据本发明的一个方面，提供了一种用于预测晶片（14）层的半导体工艺的端点时间的方法。终点时间是发生层的预定厚度的时间。接收针对第一采样时间计算的层厚度。然后确定层厚度是否在预定范围内。如果层厚度在预定范围内，则用于更新预测的处理速率。预测的流程速率用于预测终点时间。端点时间用于控制半导体工艺，使得形成具有预定厚度的晶片层（14）。

8. 发明授权

US6140243A Low temperature process for post-etch defluoridation of metals 失效
标题翻译：金属蚀刻后氟化的低温工艺
公开(公告)号：US6140243A
公开(公告)日：2000-10-31
申请号：US988570
申请日：1997-12-11
申请人： Robert M. Wallace , Peijun Chen , S. Charles Baber , Steven A. Henck
发明人： Robert M. Wallace , Peijun Chen , S. Charles Baber , Steven A. Henck
IPC分类号： H01L21/302 , H01L21/02 , H01L21/027 , H01L21/304 , H01L21/3065 , H01L21/3105 , H01L21/321 , H01L21/3213 , H01L21/768 , H01L21/311
CPC分类号： H01L21/02068 , H01L21/02063 , H01L21/02071 , H01L21/3105 , H01L21/321 , H01L21/32136
摘要： An integrated circuit fabrication process in which residual fluorine contamination on metal surfaces after ashing is removed by exposure to an NH.sub.3 /O.sub.2 plasma.
摘要翻译：集成电路制造工艺，其中通过暴露于NH 3 / O 2等离子体去除灰化后金属表面上的残留氟污染。

9. 发明授权

US5620556A Method for rapidly etching material on a semiconductor device 失效
标题翻译：在半导体器件上快速蚀刻材料的方法
公开(公告)号：US5620556A
公开(公告)日：1997-04-15
申请号：US385411
申请日：1995-02-08
申请人： Steven A. Henck
发明人： Steven A. Henck
IPC分类号： G01B11/06 , G01N21/00
CPC分类号： G01B11/065
摘要： Apparatus and methods for precise processing of thin materials in a process chamber by the use of ellipsometer monitoring is disclosed. The process includes rapidly etching a layer 42 of material covering a semiconductor device. The process includes placing the semiconductor wafer 14 into a processing chamber 10. In a typical operation, the wafer 14 will include a selected substrate 32 having a first thin layer 30 of material covering the substrate 32 and then a second layer 42 of a different material covering the first layer 30. A process such as reactive ion anisotropic etching which rapidly etches the second layer 42 is initiated and this etching is monitored in situ by an ellipsometer in combination with a controller 28 to determine the thickness of the second layer 42' which has been achieved. Once the desired amount of second layer 42 remains, the rapid etching process stops to leave a residual layer 42' such as about 250 .ANG. or in a preferred embodiment a thickness equivalent to about one molecular layer. A second chemical isotropic etching process step then starts which may be substantially ineffective at etching the first layer 30 of material and which etching process consequently is typically substantially slower than the first etching process. Since only a very thin layer remains, the slow speed or isotropic nature of the second etching process does not take an unacceptable amount of time or cause other problems, such as loss of critical dimension.
摘要翻译：公开了通过使用椭偏仪监测在处理室中精细处理薄材料的装置和方法。该方法包括快速蚀刻覆盖半导体器件的材料层42。该方法包括将半导体晶片14放置在处理室10中。在典型的操作中，晶片14将包括选定的衬底32，其具有覆盖衬底32的材料的第一薄层30，然后是不同材料的第二层42 覆盖第一层30.开始快速蚀刻第二层42的诸如反应性离子各向异性蚀刻的过程，并且通过与控制器28组合的椭圆计现场监测该蚀刻，以确定第二层42'的厚度，已经实现。一旦所需量的第二层42保留，则快速蚀刻工艺停止以留下残余层42'，例如约250，或在优选实施方案中为等于约一个分子层的厚度。然后开始第二种化学各向同性蚀刻工艺步骤，其在蚀刻第一材料层30时基本上无效，因此蚀刻工艺通常比第一蚀刻工艺慢得多。由于仅剩下非常薄的层，所以第二蚀刻工艺的慢速或各向同性的性质不会变得不可接受的时间量或引起诸如临界尺寸损失的其它问题。

10. 发明授权

US5604625A Micromechanical device manufactured out of incompatible materials 失效
标题翻译：由不兼容材料制造的微机械装置
公开(公告)号：US5604625A
公开(公告)日：1997-02-18
申请号：US473596
申请日：1995-06-07
申请人： Steven A. Henck
发明人： Steven A. Henck
IPC分类号： G02B26/08
CPC分类号： G02B26/0841 , Y10S359/90
摘要： A method of preventing adhesion of contacting surfaces of micro-mechanical devices (10). Two materials are selected that are incompatible in the sense that they have at least low solid solubility and preferably, an inability to alloy. One of these materials is used as the first contacting surface (11), and the other as the second contacting surface (17).
摘要翻译：一种防止微机械装置（10）的接触表面粘附的方法。选择两种材料是不相容的，因为它们具有至少低的固溶度并且优选不能合金。这些材料中的一种用作第一接触表面（11），另一种用作第二接触表面（17）。

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