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    • 2. 发明授权
    • Methods for fabricating a micro heat barrier
    • 制造微热障的方法
    • US06673254B1
    • 2004-01-06
    • US10025446
    • 2001-12-19
    • Albert C. MarshallStanley H. KravitzChris P. TiggesGregory A. Vawter
    • Albert C. MarshallStanley H. KravitzChris P. TiggesGregory A. Vawter
    • B32B3100
    • B81B3/0081B81B2203/0361
    • Methods for fabricating a highly effective, micron-scale micro heat barrier structure and process for manufacturing a micro heat barrier based on semiconductor and/or MEMS fabrication techniques. The micro heat barrier has an array of non-metallic, freestanding microsupports with a height less than 100 microns, attached to a substrate. An infrared reflective membrane (e.g., 1 micron gold) can be supported by the array of microsupports to provide radiation shielding. The micro heat barrier can be evacuated to eliminate gas phase heat conduction and convection. Semi-isotropic, reactive ion plasma etching can be used to create a microspike having a cusp-like shape with a sharp, pointed tip (
    • 用于制造高效微米级微阻隔结构的方法和基于半导体和/或MEMS制造技术制造微热阻的方法。 该微热屏障具有高度小于100微米的非金属独立的微型支架的阵列,附着于基底。 红外反射膜(例如,1微米金)可以由微支架阵列支撑以提供辐射屏蔽。 微型隔热层可以抽真空,以消除气相热传导和对流。 可以使用半各向同性的反应离子等离子体蚀刻来形成具有尖锐尖端(<0.1微米)的尖头状形状的微型卡口,以使尖端的接触面积最小化。 热源可以直接放置在微型杯上。 微热障可以具有在10 -6至10 -7 W / m-K范围内的明显的热导率。 可以使用多层反射膜来增加耐热性。
    • 3. 发明授权
    • Micro heat barrier
    • 微热障
    • US06605339B1
    • 2003-08-12
    • US10025449
    • 2001-12-19
    • Albert C. MarshallStanley H. KravitzChris P. TiggesGregory A. Vawter
    • Albert C. MarshallStanley H. KravitzChris P. TiggesGregory A. Vawter
    • B32B326
    • B81B3/0081Y10T428/24802
    • A highly effective, micron-scale micro heat barrier structure and process for manufacturing a micro heat barrier based on semiconductor and/or MEMS fabrication techniques. The micro heat barrier has an array of non-metallic, freestanding microsupports with a height less than 100 microns, attached to a substrate. An infrared reflective membrane (e.g., 1 micron gold) can be supported by the array of microsupports to provide radiation shielding. The micro heat barrier can be evacuated to eliminate gas phase heat conduction and convection. Semi-isotropic, reactive ion plasma etching can be used to create a microspike having a cusp-like shape with a sharp, pointed tip (
    • 基于半导体和/或MEMS制造技术的高效微米级微阻隔结构和用于制造微热阻的方法。 该微热屏障具有高度小于100微米的非金属独立的微型支架的阵列,附着于基底。 红外反射膜(例如,1微米金)可以由微支架阵列支撑以提供辐射屏蔽。 微型隔热层可以抽真空,以消除气相热传导和对流。 可以使用半各向同性的反应离子等离子体蚀刻来形成具有尖锐尖端(<0.1微米)的尖头状形状的微型卡口,以使尖端的接触面积最小化。 热源可以直接放置在微型杯上。 微热障可以具有在10-6至10-7W / m-K范围内的明显的热导率。 可以使用多层反射膜来增加耐热性。
    • 7. 发明授权
    • Method for making field-structured memory materials
    • 制作现场结构记忆材料的方法
    • US06391393B1
    • 2002-05-21
    • US09791505
    • 2001-02-22
    • James E. MartinRobert A. AndersonChris P. Tigges
    • James E. MartinRobert A. AndersonChris P. Tigges
    • C08F246
    • C08F2/44
    • A method of forming a dual-level memory material using field structured materials. The field structured materials are formed from a dispersion of ferromagnetic particles in a polymerizable liquid medium, such as a urethane acrylate-based photopolymer, which are applied as a film to a support and then exposed in selected portions of the film to an applied magnetic or electric field. The field can be applied either uniaxially or biaxially at field strengths up to 150 G or higher to form the field structured materials. After polymerizing the field-structure materials, a magnetic field can be applied to selected portions of the polymerized field-structured material to yield a dual-level memory material on the support, wherein the dual-level memory material supports read-and-write binary data memory and write once, read many memory.
    • 使用场结构材料形成双层记录材料的方法。 场结构材料由可聚合液体介质如聚氨酯丙烯酸酯类光聚合物中的铁磁颗粒的分散体形成,其作为膜施加到载体上,然后在膜的选定部分暴露于所施加的磁性或 电场。 该领域可以单轴或双轴应用于高达150G或更高的场强,以形成场结构材料。 在聚合场结构材料之后,可以将磁场施加到聚合的场结构材料的选定部分,以在载体上产生双层存储材料,其中双层存储材料支持读写二进制 数据存储和写入一次,读取很多内存。