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1. 发明授权

US07462845B2 Removable liners for charged particle beam systems 失效
标题翻译：用于带电粒子束系统的可拆卸衬套
公开(公告)号：US07462845B2
公开(公告)日：2008-12-09
申请号：US11422092
申请日：2006-06-05
申请人： Alan Michael Chandler , Tushar Desai , Ellis Craig Hayford , Nicholas Mone, Jr. , James Spiros Nakos
发明人： Alan Michael Chandler , Tushar Desai , Ellis Craig Hayford , Nicholas Mone, Jr. , James Spiros Nakos
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/0213 , H01J2237/022 , H01J2237/0268
摘要： A method of improving the performance of a charged beam apparatus. The method including: providing a chamber having an interior surface; providing a pump port for evacuating the chamber; providing a substrate holder within the chamber; forming a charged particle beam within the chamber, the charged beam generated by a source and the charged particle beam striking the substrate; and placing one or more liners in contact with one or more different regions of the interior surface of the chamber, the liners preventing material generated by interaction of the charged beam and the substrate from coating the one or more different regions of the interior surface of the chamber.
摘要翻译：一种提高带电束装置性能的方法。该方法包括：提供具有内表面的室; 提供用于抽空腔室的泵口; 在所述室内提供衬底保持器; 在室内形成带电粒子束，由源产生的带电束和带电粒子束撞击衬底; 并且将一个或多个衬垫放置成与腔室的内表面的一个或多个不同区域接触，衬垫防止由带电束和衬底的相互作用产生的材料涂覆在腔室内表面的一个或多个不同区域房间。

2. 发明授权

US07897939B2 Removable liners for charged particle beam systems 失效
标题翻译：用于带电粒子束系统的可拆卸衬套
公开(公告)号：US07897939B2
公开(公告)日：2011-03-01
申请号：US12167271
申请日：2008-07-03
申请人： Alan Michael Chandler , Tushar Desai , Ellis Craig Hayford , Nicholas Mone, Jr. , James Spiros Nakos
发明人： Alan Michael Chandler , Tushar Desai , Ellis Craig Hayford , Nicholas Mone, Jr. , James Spiros Nakos
IPC分类号： G21K5/00
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/0213 , H01J2237/022 , H01J2237/0268
摘要： A method of improving the performance of charged beam apparatus. The method including: providing the apparatus, the apparatus comprising: a chamber having an interior surface; a pump port for evacuating the chamber; a substrate holder within the chamber; and a charged particle beam within the chamber, the charged beam generated by a source and the charged particle beam striking the substrate; and positioning one or more liners in contact with one or more different regions of the interior surface of the chamber, the liners preventing material generated by interaction of the charged beam and the substrate from coating the one or more different regions of the interior surface of the chamber.
摘要翻译：一种提高带电束装置性能的方法。该方法包括：提供该装置，该装置包括：具有内表面的腔室; 用于抽空室的泵口; 腔室内的衬底保持器; 以及室内的带电粒子束，由源产生的带电束和带电粒子束撞击衬底; 并且将一个或多个衬垫定位成与腔室的内表面的一个或多个不同区域接触，衬垫防止由带电束和衬底的相互作用产生的材料涂覆在腔室的内表面的一个或多个不同区域房间。

3. 发明授权

US07897940B2 Removable liners for charged particle beam systems 失效
标题翻译：用于带电粒子束系统的可拆卸衬套
公开(公告)号：US07897940B2
公开(公告)日：2011-03-01
申请号：US12168168
申请日：2008-07-07
申请人： Alan Michael Chandler , Tushar Desai , Ellis Craig Hayford , Nicholas Mone, Jr. , James Spiros Nakos
发明人： Alan Michael Chandler , Tushar Desai , Ellis Craig Hayford , Nicholas Mone, Jr. , James Spiros Nakos
IPC分类号： G01K5/00
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/0213 , H01J2237/022 , H01J2237/0268
摘要： An apparatus. The apparatus including: a chamber having an interior surface; a pump port for evacuating the chamber; a substrate holder within the chamber; a charged particle beam within the chamber, the charged beam generated by a source and the charged particle beam striking the substrate; and one or more liners in contact with one or more different regions of the interior surface of the chamber, the liners preventing material generated by interaction of the charged beam and the substrate from coating the one or more different regions of the interior surface of the chamber.
摘要翻译：一种装置该装置包括：具有内表面的室; 用于抽空室的泵口; 腔室内的衬底保持器; 室内的带电粒子束，由源产生的带电束和带电粒子束撞击衬底; 以及与室的内表面的一个或多个不同区域接触的一个或多个衬垫，衬垫防止由带电束和衬底的相互作用产生的材料涂覆室的内表面的一个或多个不同区域。

4. 发明申请

US20080277597A1 REMOVABLE LINERS FOR CHARGED PARTICLE BEAM SYSTEMS 失效
标题翻译：充电粒子束系统的可拆卸线
公开(公告)号：US20080277597A1
公开(公告)日：2008-11-13
申请号：US12168168
申请日：2008-07-07
申请人： Alan Michael Chandler , Tushar Desai , Ellis Craig Hayford , Nicholas Mone, Jr. , James Spiros Nakos
发明人： Alan Michael Chandler , Tushar Desai , Ellis Craig Hayford , Nicholas Mone, Jr. , James Spiros Nakos
IPC分类号： H01J37/16 , H01J37/08 , H01L21/425
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/0213 , H01J2237/022 , H01J2237/0268
摘要： An apparatus. The apparatus including: a chamber having an interior surface; a pump port for evacuating the chamber; a substrate holder within the chamber; a charged particle beam within the chamber, the charged beam generated by a source and the charged particle beam striking the substrate; and one or more liners in contact with one or more different regions of the interior surface of the chamber, the liners preventing material generated by interaction of the charged beam and the substrate from coating the one or more different regions of the interior surface of the chamber.
摘要翻译：一种装置该装置包括：具有内表面的室; 用于抽空室的泵口; 腔室内的衬底保持器; 室内的带电粒子束，由源产生的带电束和带电粒子束撞击衬底; 以及与室的内表面的一个或多个不同区域接触的一个或多个衬垫，衬垫防止由带电束和衬底的相互作用产生的材料涂覆室的内表面的一个或多个不同区域。

5. 发明申请

US20080258081A1 REMOVABLE LINERS FOR CHARGED PARTICLE BEAM SYSTEMS 失效
标题翻译：充电粒子束系统的可拆卸线
公开(公告)号：US20080258081A1
公开(公告)日：2008-10-23
申请号：US12167271
申请日：2008-07-03
申请人： Alan Michael Chandler , Tushar Desai , Ellis Craig Hayford , Nicholas Mone , James Spiros Nakos
发明人： Alan Michael Chandler , Tushar Desai , Ellis Craig Hayford , Nicholas Mone , James Spiros Nakos
IPC分类号： H01J37/30 , H05H1/00
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/0213 , H01J2237/022 , H01J2237/0268
摘要： A method of improving the performance of charged beam apparatus. The method including: providing the apparatus, the apparatus comprising: a chamber having an interior surface; a pump port for evacuating the chamber; a substrate holder within the chamber; and a charged particle beam within the chamber, the charged beam generated by a source and the charged particle beam striking the substrate; and positioning one or more liners in contact with one or more different regions of the interior surface of the chamber, the liners preventing material generated by interaction of the charged beam and the substrate from coating the one or more different regions of the interior surface of the chamber.
摘要翻译：一种提高带电束装置性能的方法。该方法包括：提供该装置，该装置包括：具有内表面的腔室; 用于抽空室的泵口; 腔室内的衬底保持器; 以及室内的带电粒子束，由源产生的带电束和带电粒子束撞击衬底; 并且将一个或多个衬垫定位成与腔室的内表面的一个或多个不同区域接触，衬垫防止由带电束和衬底的相互作用产生的材料涂覆在腔室的内表面的一个或多个不同区域房间。

6. 发明授权

US08236580B2 Copper contamination detection method and system for monitoring copper contamination 有权
标题翻译：铜污染检测方法和铜污染监测系统
公开(公告)号：US08236580B2
公开(公告)日：2012-08-07
申请号：US12973062
申请日：2010-12-20
申请人： Jay Sanford Burnham , Joseph Kerry Vaughn Comeau , Leslie Peter Crane , James Randall Elliott , Scott Alan Estes , James Spiros Nakos , Eric Jeffrey White
发明人： Jay Sanford Burnham , Joseph Kerry Vaughn Comeau , Leslie Peter Crane , James Randall Elliott , Scott Alan Estes , James Spiros Nakos , Eric Jeffrey White
IPC分类号： H01L21/00
CPC分类号： H01L22/20 , H01L22/12
摘要： A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.
摘要翻译：监测铜污染的方法。该方法包括：（a）将N型掺杂剂离子注入到单晶硅衬底的区域中，所述区域邻接衬底的顶表面; （c）通过在惰性气氛中在500℃或更高的温度下对衬底退火来活化N型掺杂剂; （c）在一段时间内将基底浸入水溶液中，以监测铜污染的水溶液; 和（d）通过基底区域确定从水溶液中吸附的铜的量。

7. 发明申请

US20110278674A1 TRENCH ISOLATION AND METHOD OF FABRICATING TRENCH ISOLATION 审中-公开
标题翻译： TRENCH分离和制备TRENCH隔离的方法
公开(公告)号：US20110278674A1
公开(公告)日：2011-11-17
申请号：US13192561
申请日：2011-07-28
申请人： Terence Blackwell Hook , Jeffrey Bowman Johnson , James Spiros Nakos
发明人： Terence Blackwell Hook , Jeffrey Bowman Johnson , James Spiros Nakos
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/76224 , H01L21/76237 , H01L21/76283 , H01L21/82 , H01L21/823878 , H01L21/823892
摘要： Trench isolation structure and method of forming trench isolation structures. The structures includes a trench in a silicon region of a substrate, the trench extending from a top surface of the substrate into the silicon region; an ion implantation stopping layer over sidewalls of the trench; a dielectric fill material filling remaining space in the trench, the dielectric fill material not including any materials found in the stopping layer; an N-type dopant species in a first region of the silicon region on a first side of the trench; the N-type dopant species in a first region of the dielectric material adjacent to the first side of the trench; a P-type dopant species in a second region of the silicon region on a second side of the trench; and the P-type dopant species in a second region of the dielectric material adjacent to the second side of the trench.
摘要翻译：沟槽隔离结构和形成沟槽隔离结构的方法。所述结构包括在衬底的硅区域中的沟槽，所述沟槽从所述衬底的顶表面延伸到所述硅区域中; 在沟槽的侧壁上的离子注入停止层; 填充沟槽中的剩余空间的介电填充材料，所述介电填充材料不包括在所述停止层中发现的任何材料; 在所述沟槽的第一侧上的所述硅区域的第一区域中的N型掺杂剂物质; 所述N型掺杂剂物质在所述电介质材料的与所述沟槽的第一侧相邻的第一区域中; 在沟槽的第二侧上的硅区域的第二区域中的P型掺杂物种; 以及邻近沟槽第二侧的电介质材料的第二区域中的P型掺杂剂物质。

8. 发明申请

US20110086442A1 COPPER CONTAMINATION DETECTION METHOD AND SYSTEM FOR MONITORING COPPER CONTAMINATION 有权
标题翻译：铜污染检测方法和监测铜污染的系统
公开(公告)号：US20110086442A1
公开(公告)日：2011-04-14
申请号：US12973062
申请日：2010-12-20
申请人： Jay Sanford Burnham , Joseph Kerry Vaughn Comeau , Leslie Peter Crane , James Randall Elliott , Scott Alan Estes , James Spiros Nakos , Eric Jeffrey White
发明人： Jay Sanford Burnham , Joseph Kerry Vaughn Comeau , Leslie Peter Crane , James Randall Elliott , Scott Alan Estes , James Spiros Nakos , Eric Jeffrey White
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , H01L22/12
摘要： A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.
摘要翻译：监测铜污染的方法。该方法包括：（a）将N型掺杂剂离子注入到单晶硅衬底的区域中，所述区域邻接衬底的顶表面; （c）通过在惰性气氛中在500℃或更高的温度下对衬底退火来活化N型掺杂剂; （c）在一段时间内将基底浸入水溶液中，以监测铜污染的水溶液; 和（d）通过基底区域确定从水溶液中吸附的铜的量。

9. 发明申请

US20080102650A1 METHOD OF FABRICATING A NITRIDED SILICON OXIDE GATE DIELECTRIC LAYER 失效
标题翻译：制备氮化硅氧烷膜电介质层的方法
公开(公告)号：US20080102650A1
公开(公告)日：2008-05-01
申请号：US11554097
申请日：2006-10-30
申请人： Edward Dennis Adams , Jay Sanford Burnham , Evgeni Gousev , James Spiros Nakos , Heather Elizabeth Preuss , Joseph Francis Shepard
发明人： Edward Dennis Adams , Jay Sanford Burnham , Evgeni Gousev , James Spiros Nakos , Heather Elizabeth Preuss , Joseph Francis Shepard
IPC分类号： H01L21/31
CPC分类号： H01L21/02332 , H01L21/0214 , H01L21/02337 , H01L21/28202 , H01L21/3144
摘要： A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.
摘要翻译：形成氮化硅氧化物层的方法。该方法包括：在硅衬底的表面上形成二氧化硅层; 在小于或等于约900℃的温度和大于约500托的压力下进行二氧化硅层的快速热氮化，以形成初始氮化氧化硅层; 并且在小于或等于约900℃的温度和大于约500托的压力下进行初始氮化硅氧化物层的快速热氧化或退火以形成氮化的氧化硅层。还有一种形成具有氮化硅氧化物介电层的MOSFET的方法。

10. 发明授权

US08012848B2 Trench isolation and method of fabricating trench isolation 有权
标题翻译：沟槽隔离和制造沟槽隔离的方法
公开(公告)号：US08012848B2
公开(公告)日：2011-09-06
申请号：US11839585
申请日：2007-08-16
申请人： Terence Blackwell Hook , Jeffrey Bowman Johnson , James Spiros Nakos
发明人： Terence Blackwell Hook , Jeffrey Bowman Johnson , James Spiros Nakos
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/76237 , H01L21/76283 , H01L21/82 , H01L21/823878 , H01L21/823892
摘要： Trench isolation structure and method of forming trench isolation structures. The structures includes a trench in a silicon region of a substrate, the trench extending from a top surface of the substrate into the silicon region; an ion implantation stopping layer over sidewalls of the trench; a dielectric fill material filling remaining space in the trench, the dielectric fill material not including any materials found in the stopping layer; an N-type dopant species in a first region of the silicon region on a first side of the trench; the N-type dopant species in a first region of the dielectric material adjacent to the first side of the trench; a P-type dopant species in a second region of the silicon region on a second side of the trench; and the P-type dopant species in a second region of the dielectric material adjacent to the second side of the trench.
摘要翻译：沟槽隔离结构和形成沟槽隔离结构的方法。所述结构包括在衬底的硅区域中的沟槽，所述沟槽从所述衬底的顶表面延伸到所述硅区域中; 在沟槽的侧壁上的离子注入停止层; 填充沟槽中的剩余空间的介电填充材料，所述介电填充材料不包括在所述停止层中发现的任何材料; 在所述沟槽的第一侧上的所述硅区域的第一区域中的N型掺杂剂物质; 所述N型掺杂剂物质在所述电介质材料的与所述沟槽的第一侧相邻的第一区域中; 在沟槽的第二侧上的硅区域的第二区域中的P型掺杂物种; 以及邻近沟槽第二侧的电介质材料的第二区域中的P型掺杂剂物质。

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