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    • 6. 发明授权
    • Multi-mode interference splitter/combiner with adjustable splitting ratio
    • 具有可调分频比的多模式干涉分离器/组合器
    • US08532447B1
    • 2013-09-10
    • US13089999
    • 2011-04-19
    • Martin H. KwakernaakHiroshi Wada
    • Martin H. KwakernaakHiroshi Wada
    • G02B6/26
    • G02B6/125G02B6/2813
    • A multimode interference splitter/combiner that includes a monolithic device for photonically coupling an input optical waveguide to first and second output optical waveguides. The input waveguide may be optically coupled to a first end of a MMI portion, while the first and second output waveguides may be optically coupled to a second end of the MMI portion. The input waveguide is coupled to a planar facet of the MMI portion so that the input waveguide may have a propagation axis that is oriented at an angle with respect to the planar facet of the MMI portion. A desired splitting ratio may be achieved by adjusting the angle between the input waveguide and the MMI portion.
    • 一种多模干涉分离器/组合器,其包括用于将输入光波导光学耦合到第一和第二输出光波导的单片器件。 输入波导可以光耦合到MMI部分的第一端,而第一和第二输出波导可以光耦合到MMI部分的第二端。 输入波导耦合到MMI部分的平面小面,使得输入波导可以具有相对于MMI部分的平面小面成一定角度的传播轴。 可以通过调节输入波导和MMI部分之间的角度来实现期望的分束比。
    • 7. 发明授权
    • Interface for a-Si waveguides and III/V waveguides
    • 用于a-Si波导和III / V波导的接口
    • US07773840B2
    • 2010-08-10
    • US11545061
    • 2006-10-06
    • Martin H. KwakernaakWinston Kong ChanDavid CapewellHooman Mohseni
    • Martin H. KwakernaakWinston Kong ChanDavid CapewellHooman Mohseni
    • G02B6/26
    • G02B6/12002B82Y20/00G02B6/12004G02B6/136G02B2006/12121G02B2006/12147H01S5/026H01S5/34306
    • A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.
    • 描述了将波导耦合到衬底上的多层有源器件结构的方法。 该方法包括通过蚀刻有源器件结构形成接合区域以相对于衬底形成倾斜的蚀刻轮廓,通过与多层有源器件结构相邻的蚀刻停止来对准多层有源器件结构的多个层,以及 在所述蚀刻的有源器件结构上沉积所述波导,其中在所述接合区域处形成倾斜的有源无源结,以减少所形成的耦合器件中的残余界面反射。 还描述了用于去除形成无源非晶硅波导的倾斜结区域中的至少一个激光层的方法。 这包括沉积用作蚀刻掩模的SiN层,图案化光致抗蚀剂掩模,通过反应离子蚀刻图案化SiN层,剥离光致抗蚀剂掩模和蚀刻至少一个激光层。