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    • 8. 发明授权
    • Active matrix addressing liquid-crystal display device
    • 有源矩阵寻址液晶显示装置
    • US07663146B2
    • 2010-02-16
    • US10028778
    • 2001-12-28
    • Hiroaki TanakaAkira FujitaShigeru KimuraAkitoshi MaedaTakasuke Hayase
    • Hiroaki TanakaAkira FujitaShigeru KimuraAkitoshi MaedaTakasuke Hayase
    • G02F1/1343
    • H01L29/4908G02F1/13458G02F1/136286G02F2001/13629G02F2001/136295H01L29/458
    • An active matrix addressing LCD device having an active matrix substrate on which conductive lines are formed is provided, which suppress the AI hillock without complicating the structure of the lines and which decreases the electrical connection resistance increase at the terminals of the lines, thereby improving the connection reliability. The device comprises an active matrix substrate having a transparent, dielectric plate, thin-film transistors (TFTs) arranged on the plate, and pixel electrodes arranged on the plate. Gate electrodes of the TFTs and scan lines have a first multilevel conductive structure. Common electrodes and common lines may have the first multilevel conductive structure. Source and drain electrodes of the TFTs and signal lines may have a second multilevel conductive structures. Each of the first and second multilevel conductive structures includes a three-level TiN/Ti/Al or TiN/Al/Ti structure or a four-level TiN/Ti/AI/Ti structure. Each of the TiN film of the first and second structures has a nitrogen concentration of 25 atomic % or higher. The Al file may be replaced with an Al alloy.
    • 提供了一种有源矩阵寻址LCD器件,其具有形成有导电线的有源矩阵基板,其抑制了AI小丘,而不会使线的结构复杂化,并且降低了线路端子处的电连接电阻增加,从而改善了 连接可靠性。 该器件包括具有透明电介质板,布置在板上的薄膜晶体管(TFT)和布置在板上的像素电极的有源矩阵基板。 TFT和扫描线的栅极具有第一多层导电结构。 公共电极和公共线可以具有第一多层导电结构。 TFT和信号线的源极和漏极可以具有第二多层导电结构。 第一和第二多层导电结构中的每一个包括三级TiN / Ti / Al或TiN / Al / Ti结构或四级TiN / Ti / Al / Ti结构。 第一和第二结构的TiN膜的氮浓度为25原子%以上。 Al文件可以用Al合金代替。