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    • 8. 发明授权
    • Active matrix thin film transistor
    • 有源矩阵薄膜晶体管
    • US06800872B2
    • 2004-10-05
    • US10235493
    • 2002-09-06
    • Hiroaki TanakaHiroyuki Uchida
    • Hiroaki TanakaHiroyuki Uchida
    • H01L2904
    • H01L29/41733G02F1/136286G02F1/1368G02F2001/136236H01L27/124H01L27/1288H01L29/458H01L29/66765H01L29/78633
    • As a configuration of a gate island consisting of a laminated structure including a gate electrode, a gate insulating film and a semiconductor film for constituting a thin film transistor, the gate insulating film and the semiconductor film are formed into a plane shape equal to or smaller than the gate electrode and covered with a channel protection film. Further, a drain electrode and a source electrode are formed to be connected with the semiconductor film through openings provided to the channel protection film. Consequently, side surfaces of the semiconductor film and the gate insulating film can be covered with the channel protection film formed in an upper layer, and impurities existing in a liquid crystal layer can be prevented from entering the semiconductor film by diffusion or an electric field, thereby improving the characteristic of a TFT.
    • 作为由包括栅电极,栅极绝缘膜和用于构成薄膜晶体管的半导体膜的层叠结构构成的栅极岛的结构,栅极绝缘膜和半导体膜形成为等于或小于 比栅电极和通道保护膜覆盖。 此外,漏电极和源极电极通过设置在通道保护膜上的开口与半导体膜连接。 因此,半导体膜和栅极绝缘膜的侧表面可以被形成在上层中的沟道保护膜覆盖,并且可以防止存在于液晶层中的杂质通过扩散或电场进入半导体膜, 从而提高TFT的特性。
    • 9. 发明授权
    • Active matrix substrate and manufacturing method thereof
    • 有源矩阵基板及其制造方法
    • US06468840B2
    • 2002-10-22
    • US09841074
    • 2001-04-25
    • Hiroaki TanakaHiroyuki Uchida
    • Hiroaki TanakaHiroyuki Uchida
    • H01L2100
    • H01L29/41733G02F1/136286G02F1/1368G02F2001/136236H01L27/124H01L27/1288H01L29/458H01L29/66765H01L29/78633
    • As a configuration of a gate island consisting of a laminated structure including a gate electrode, a gate insulating film and a semiconductor film for constituting a thin film transistor, the gate insulating film and the semiconductor film are formed into a plane shape equal to or smaller than the gate electrode and covered with a channel protection film. Further, a drain electrode and a source electrode are formed to be connected with the semiconductor film through openings provided to the channel protection film. Consequently, side surfaces of the semiconductor film and the gate insulating film can be covered with the channel protection film formed in an upper layer, and impurities existing in a liquid crystal layer can be prevented from entering the semiconductor film by diffusion or an electric field, thereby improving the characteristic of a TFT.
    • 作为由包括栅电极,栅极绝缘膜和用于构成薄膜晶体管的半导体膜的层叠结构构成的栅极岛的结构,栅极绝缘膜和半导体膜形成为等于或小于 比栅电极和通道保护膜覆盖。 此外,漏电极和源极电极通过设置在通道保护膜上的开口与半导体膜连接。 因此,半导体膜和栅极绝缘膜的侧表面可以被形成在上层中的沟道保护膜覆盖,并且可以防止存在于液晶层中的杂质通过扩散或电场进入半导体膜, 从而提高TFT的特性。