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    • 5. 发明授权
    • Color liquid crystal display device and manufacturing method of the same
    • 彩色液晶显示装置及其制造方法
    • US07041522B2
    • 2006-05-09
    • US11028310
    • 2005-01-04
    • Hiroaki TanakaMichiaki SakamotoTakahiko WatanabeYoshiaki HashimotoSyuusaku Kido
    • Hiroaki TanakaMichiaki SakamotoTakahiko WatanabeYoshiaki HashimotoSyuusaku Kido
    • H01L21/00
    • G02F1/136209G02F1/136227G02F2001/136236
    • In a manufacturing method of a color liquid crystal display device, a first conductive film is formed on a transparent insulating substrate to form a gate electrode and a gate bus line (first PR process). A gate insulating film, a semiconductor layer, an ohmic layer, and a second conductive film are deposited to form an island of a thin film transistor and a drain bus line (second PR process). Then, color filters in respective three colors are formed in their respective predetermined regions on the transparent insulating substrate in succession (third through fifth PR processes). A black matrix is formed, and a drain electrode and a source electrode are formed in the island by removing the second conductive film and ohmic layer on a region corresponding to the channel region by using the black matrix as a mask (sixth PR process). Then, a planarization film and a pixel electrode are formed (seventh and eighth PR processes).
    • 在彩色液晶显示装置的制造方法中,在透明绝缘基板上形成第一导电膜,形成栅电极和栅极总线(第一PR处理)。 沉积栅极绝缘膜,半导体层,欧姆层和第二导电膜以形成薄膜晶体管和漏极总线(第二PR处理)的岛。 然后,在透明绝缘基板上的各自的预定区域中连续形成三种颜色的滤色器(第三至第五PR处理)。 通过使用黑矩阵作为掩模(第六PR处理),通过去除与沟道区对应的区域上的第二导电膜和欧姆层,在岛中形成漏极和源电极。 然后,形成平坦化膜和像素电极(第七和第八PR处理)。
    • 7. 发明授权
    • Method of forming a lamination film pattern and improved lamination film pattern
    • 形成层压膜图案和改进的层压膜图案的方法
    • US07554207B2
    • 2009-06-30
    • US11295462
    • 2005-12-07
    • Tsuyoshi KatohSyuusaku KidoAkitoshi Maeda
    • Tsuyoshi KatohSyuusaku KidoAkitoshi Maeda
    • H01L29/40
    • G02F1/136286G02F2001/136295H01L27/12H01L27/124
    • In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.
    • 在形成导电层叠图案的方法中,在含铬顶层形成在绝缘膜上之前,在含铬底层的表面上形成绝缘膜,使得绝缘膜将铝 - 含有来自含铬底层的顶层。 进行第一选择性湿式蚀刻工艺,以用第一蚀刻剂选择性地蚀刻含铝顶层。 进行第二选择性湿式蚀刻工艺,以在存在绝缘膜的情况下用第二蚀刻剂选择性地蚀刻含铬底层,该绝缘膜抑制含铬底层和铝之间的异质金属接触电位差 在第二选择性湿蚀刻工艺期间。