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1. 发明申请

US20050045588A1 Dry etching method 有权
标题翻译：干蚀刻法
公开(公告)号：US20050045588A1
公开(公告)日：2005-03-03
申请号：US10475268
申请日：2002-02-27
申请人： Akiteru Koh , Toshihiro Miura , Takayuki Fukasawa , Akitaka Shimizu , Masato Kushibiki , Asao Yamashita , Fumihiko Higuchi
发明人： Akiteru Koh , Toshihiro Miura , Takayuki Fukasawa , Akitaka Shimizu , Masato Kushibiki , Asao Yamashita , Fumihiko Higuchi
IPC分类号： H01L21/28 , H01L21/3213 , C23F1/00
CPC分类号： H01J37/32082 , H01L21/28061 , H01L21/28123 , H01L21/32137
摘要： A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.
摘要翻译：通过使用Cl 2 + O 2气体作为蚀刻气体的等离子体蚀刻来蚀刻硅化钨层（104）。当硅化钨层（104）的蚀刻基本上结束时，蚀刻气体切换到Cl2 + O2 + NF3，并且通过等离子体蚀刻进行过蚀刻。在钨硅化物层（104）下面形成的多晶硅层（103）被均匀地微蚀刻的状态下，结束蚀刻处理。与现有技术相比，多晶硅层（103）的剩余量可以均匀，并且可以稳定地制造高质量的半导体器件。

2. 发明授权

US07192532B2 Dry etching method 有权
标题翻译：干蚀刻法
公开(公告)号：US07192532B2
公开(公告)日：2007-03-20
申请号：US10475268
申请日：2002-02-27
申请人： Akiteru Koh , Toshihiro Miura , Takayuki Fukasawa , Akitaka Shimizu , Masato Kushibiki , Asao Yamashita , Fumihiko Higuchi
发明人： Akiteru Koh , Toshihiro Miura , Takayuki Fukasawa , Akitaka Shimizu , Masato Kushibiki , Asao Yamashita , Fumihiko Higuchi
IPC分类号： C03C25/68
CPC分类号： H01J37/32082 , H01L21/28061 , H01L21/28123 , H01L21/32137
摘要： A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.
摘要翻译：通过使用Cl 2 O 2 + O 2气体作为蚀刻气体的等离子体蚀刻来蚀刻硅化钨层（104）。当钨硅化物层（104）的蚀刻基本上结束时，蚀刻气体被切换到Cl 2 + O 2 + N N 3 3并过度通过等离子体蚀刻进行蚀刻。在钨硅化物层（104）下方形成的多晶硅层（103）被均匀地微蚀刻的状态下结束蚀刻处理。与现有技术相比，多晶硅层（103）的剩余量可以均匀，并且可以稳定地制造高质量的半导体器件。

3. 发明授权

US07179752B2 Dry etching method 有权
标题翻译：干蚀刻法
公开(公告)号：US07179752B2
公开(公告)日：2007-02-20
申请号：US10482405
申请日：2002-07-05
申请人： Akitaka Shimizu , Takashi Tsuruta , Takashi Enomoto , Hiromi Oka , Akiteru Koh
发明人： Akitaka Shimizu , Takashi Tsuruta , Takashi Enomoto , Hiromi Oka , Akiteru Koh
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/31138 , H01L21/31144
摘要： A dry etching method involves plasma etching an organic anti-reflecting coating film through a mask layer made of photoresist and having a predetermined pattern by using an etching gas of CF4 and O2. The method allows an organic anti-reflecting coating film to be etched such that the etched film exhibits a side wall portion having a better shape as compared with that formed by a conventional technique.
摘要翻译：干蚀刻方法包括通过使用CF 4和O 2的蚀刻气体等离子体蚀刻通过由光致抗蚀剂制成的掩模层并具有预定图案的有机抗反射涂膜 >。该方法允许蚀刻有机抗反射涂膜，使得蚀刻膜与通过常规技术形成的表面相比具有更好形状的侧壁部分。

4. 发明授权

US07183217B2 Dry-etching method 有权
标题翻译：干蚀刻法
公开(公告)号：US07183217B2
公开(公告)日：2007-02-27
申请号：US10481645
申请日：2002-06-07
申请人： Etsuo Iijima , Akiteru Koh
发明人： Etsuo Iijima , Akiteru Koh
IPC分类号： H01L21/311
CPC分类号： H01L21/3065 , H01L21/76229 , Y10S438/978
摘要： A dry-etching method using an apparatus where a wafer is placed on either of a pair of opposed electrodes provided in an etching chamber, and high-frequency power is supplied to both the opposed electrodes to effect a plasma etching. The plasma etching uses a gas containing at least Cl2 and HBr. Trenches 104a, 104b are formed, as shown in FIG. 1B, in a silicon wafer 101 shown in FIG. 1A through a mask layer such as a nitride silicon layer 103. While adjusting the high-frequency power supplied to the opposed electrode where the wafer is placed, the shape of the sidewalls 105a, 105b of the trenches 104a, 104b is controlled. Thus, the trenches can have desired shapes even if the widths of the trenches are different.
摘要翻译：使用将晶片放置在设置在蚀刻室中的一对相对电极中的任一个上的设备的干蚀刻方法，并且向相对电极提供高频电力以进行等离子体蚀刻。等离子体蚀刻使用至少包含Cl 2 2和HBr的气体。形成沟槽104a，104b，如图1所示。如图1B所示，在图1所示的硅晶片101中，如图1A所示，通过诸如氮化物硅层103的掩模层。在调整提供给放置晶片的相对电极的高频功率的同时，控制沟槽104a，104b的侧壁105a，105b的形状。因此，即使沟槽的宽度不同，沟槽也可以具有期望的形状。

5. 发明授权

US07473377B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07473377B2
公开(公告)日：2009-01-06
申请号：US10959152
申请日：2004-10-07
申请人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
发明人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
IPC分类号： B44C1/22
CPC分类号： G03F7/091 , H01L21/31116 , H01L21/31144 , H01L21/312
摘要： A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
摘要翻译：等离子体处理方法包括制备其表面上具有有机层的工艺对象的步骤，以及用H 2等离子体照射工艺对象以提高有机层的等离子体电阻的步骤。

6. 发明申请

US20050103748A1 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US20050103748A1
公开(公告)日：2005-05-19
申请号：US10959152
申请日：2004-10-07
申请人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
发明人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
IPC分类号： H01L21/311 , H01L21/312 , C23F1/00
CPC分类号： G03F7/091 , H01L21/31116 , H01L21/31144 , H01L21/312
摘要： A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
摘要翻译：等离子体处理方法包括在其表面上制备具有有机层的工艺对象的步骤，以及用H 2 O 3等离子体照射工艺对象以提高有机层的等离子体电阻的步骤。

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