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1. 发明申请

US20060163202A1 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US20060163202A1
公开(公告)日：2006-07-27
申请号：US11335662
申请日：2006-01-20
申请人： Akitaka Shimizu , Hiromi Oka
发明人： Akitaka Shimizu , Hiromi Oka
IPC分类号： C23F1/00 , H01L21/306 , H01L21/302 , B44C1/22 , C03C15/00
CPC分类号： H01L21/3086 , H01J37/32935 , H01L21/3065
摘要： A plasma etching method for etching an object to be processed, which has at least an etching target layer and a patterned mask layer formed on the etching target layer, to form a recess corresponding to a pattern of the mask layer in the etching target layer, includes a first plasma process of forming deposits on the etching target layer at least around a boundary between the etching target layer and the mask layer in an opening portion constituting the pattern of the mask layer, and a second plasma process of forming the recess by etching the etching target layer after the first plasma process. An edge portion of an upper sidewall constituting the recess is rounded off in the second plasma process.
摘要翻译：一种用于蚀刻被处理物体的等离子体蚀刻方法，其至少具有蚀刻目标层和形成在蚀刻目标层上的图案化掩模层，以形成与蚀刻目标层中的掩模层的图案相对应的凹部，包括在构成掩模层的图案的开口部分中至少在蚀刻目标层和掩模层之间的边界周围在蚀刻目标层上形成沉积物的第一等离子体工艺，以及通过蚀刻形成凹部的第二等离子体工艺在第一等离子体处理之后的蚀刻目标层。构成凹部的上侧壁的边缘部分在第二等离子体工艺中被倒圆。

2. 发明授权

US07304452B2 Motor control device 有权
标题翻译：电机控制装置
公开(公告)号：US07304452B2
公开(公告)日：2007-12-04
申请号：US11372216
申请日：2006-03-10
申请人： Kazunobu Nagai , Tsuyoshi Shinohara , Hiromi Oka , Toshikazu Sekihara
发明人： Kazunobu Nagai , Tsuyoshi Shinohara , Hiromi Oka , Toshikazu Sekihara
IPC分类号： H02P23/00
CPC分类号： H02P6/182 , H02P25/024
摘要： A motor control device for controlling a permanent magnet motor includes a current detector detecting current flowing through three-phase windings, an induced voltage computing unit obtaining voltage induced at each phase from the detected three-phase winding current based on a phase voltage equation, a position detector detecting a rotational position of the rotor from the induced voltage of each phase computed by the induced current computing unit, the rotational position of the rotor having a 6n resolution where n is an integer equal to or larger than 1, an energization phase control unit determining a phase to be energized based on the rotational position of the rotor and a phase command, an energization signal forming unit forming a 6n-resolution three-phase energization signal, and an energizing unit carrying out PWM modulation for the three-phase energization signal, supplying voltage according to the modulated three-phase energization signal to each of the three-phase windings.
摘要翻译：用于控制永磁电动机的电动机控制装置包括电流检测器，其检测流过三相绕组的电流;感应电压计算单元，基于相电压方程，从检测到的三相绕组电流获得在各相感应的电压; 位置检测器，根据由感应电流计算单元计算出的各相感应电压检测转子的旋转位置，转子的旋转位置为6n分辨率，n为1以上的整数，通电相位控制基于转子的旋转位置和相位指令确定要通电的相位，形成6n分辨率三相通电信号的通电信号形成单元和对三相通电进行PWM调制的通电单元信号，根据调制的三相通电信号向每个三相绕组提供电压。

3. 发明授权

US07179752B2 Dry etching method 有权
标题翻译：干蚀刻法
公开(公告)号：US07179752B2
公开(公告)日：2007-02-20
申请号：US10482405
申请日：2002-07-05
申请人： Akitaka Shimizu , Takashi Tsuruta , Takashi Enomoto , Hiromi Oka , Akiteru Koh
发明人： Akitaka Shimizu , Takashi Tsuruta , Takashi Enomoto , Hiromi Oka , Akiteru Koh
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/31138 , H01L21/31144
摘要： A dry etching method involves plasma etching an organic anti-reflecting coating film through a mask layer made of photoresist and having a predetermined pattern by using an etching gas of CF4 and O2. The method allows an organic anti-reflecting coating film to be etched such that the etched film exhibits a side wall portion having a better shape as compared with that formed by a conventional technique.
摘要翻译：干蚀刻方法包括通过使用CF 4和O 2的蚀刻气体等离子体蚀刻通过由光致抗蚀剂制成的掩模层并具有预定图案的有机抗反射涂膜 >。该方法允许蚀刻有机抗反射涂膜，使得蚀刻膜与通过常规技术形成的表面相比具有更好形状的侧壁部分。

4. 发明授权

US07432172B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US07432172B2
公开(公告)日：2008-10-07
申请号：US11335662
申请日：2006-01-20
申请人： Akitaka Shimizu , Hiromi Oka
发明人： Akitaka Shimizu , Hiromi Oka
IPC分类号： H01L21/76 , H01L21/311
CPC分类号： H01L21/3086 , H01J37/32935 , H01L21/3065
摘要： A plasma etching method for etching an object to be processed, which has at least an etching target layer and a patterned mask layer formed on the etching target layer, to form a recess corresponding to a pattern of the mask layer in the etching target layer, includes a first plasma process of forming deposits on the etching target layer at least around a boundary between the etching target layer and the mask layer in an opening portion constituting the pattern of the mask layer, and a second plasma process of forming the recess by etching the etching target layer after the first plasma process. An edge portion of an upper sidewall constituting the recess is rounded off in the second plasma process.
摘要翻译：一种用于蚀刻被处理物体的等离子体蚀刻方法，其至少具有蚀刻目标层和形成在蚀刻目标层上的图案化掩模层，以形成与蚀刻目标层中的掩模层的图案相对应的凹部，包括在构成掩模层的图案的开口部分中至少在蚀刻目标层和掩模层之间的边界周围在蚀刻目标层上形成沉积物的第一等离子体工艺，以及通过蚀刻形成凹部的第二等离子体工艺在第一等离子体处理之后的蚀刻目标层。构成凹部的上侧壁的边缘部分在第二等离子体工艺中被倒圆。

5. 发明申请

US20070187363A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20070187363A1
公开(公告)日：2007-08-16
申请号：US11673948
申请日：2007-02-12
申请人： Hiromi OKA , Akitaka Shimizu , Shosuke Endoh , Kazuki Denpoh
发明人： Hiromi OKA , Akitaka Shimizu , Shosuke Endoh , Kazuki Denpoh
IPC分类号： G01L21/30 , H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A substrate processing apparatus that enables a state of plasma over a substrate to be maintained in a desired state easily. A plasma processing apparatus 10 that has therein a camber 11, a stage 12, and a processing gas introducing nozzle 38 carries out etching on a wafer W. The chamber 11 houses the wafer W. The stage 12 is disposed in the chamber 11 and the wafer W is mounted thereon. The processing gas introducing nozzle 38 is a projecting body that projects out into the chamber 11, and has therein a plurality of processing gas introducing holes 56 that open out in different directions to one another.
摘要翻译：使基板上的等离子体状态能够容易地维持在期望状态的基板处理装置。其中具有外倾角11，台12和处理气体引入喷嘴38的等离子体处理装置10对晶片W进行蚀刻。腔室11容纳晶片W.台12设置在腔室11中，晶片W安装在其上。处理气体引入喷嘴38是突出到室11中的突出体，并且在其中具有在彼此不同的方向上开放的多个处理气体导入孔56。

6. 发明申请

US20060290312A1 Motor control device 有权
标题翻译：电机控制装置
公开(公告)号：US20060290312A1
公开(公告)日：2006-12-28
申请号：US11372216
申请日：2006-03-10
申请人： Kazunobu Nagai , Tsuyoshi Shinohara , Hiromi Oka , Toshikazu Sekihara
发明人： Kazunobu Nagai , Tsuyoshi Shinohara , Hiromi Oka , Toshikazu Sekihara
IPC分类号： G05B11/28 , H02P23/00
CPC分类号： H02P6/182 , H02P25/024
摘要： A motor control device for controlling a permanent magnet motor includes a current detector detecting current flowing through three-phase windings, an induced voltage computing unit obtaining voltage induced at each phase from the detected three-phase winding current based on a phase voltage equation, a position detector detecting a rotational position of the rotor from the induced voltage of each phase computed by the induced current computing unit, the rotational position of the rotor having a 6n resolution where n is an integer equal to or larger than 1, an energization phase control unit determining a phase to be energized based on the rotational position of the rotor and a phase command, an energization signal forming unit forming a 6n-resolution three-phase energization signal, and an energizing unit carrying out PWM modulation for the three-phase energization signal, supplying voltage according to the modulated three-phase energization signal to each of the three-phase windings.
摘要翻译：用于控制永磁电动机的电动机控制装置包括电流检测器，其检测流过三相绕组的电流;感应电压计算单元，基于相电压方程，从检测到的三相绕组电流获得在各相感应的电压; 位置检测器，根据由感应电流计算单元计算出的各相感应电压检测转子的旋转位置，转子的旋转位置为6n分辨率，n为1以上的整数，通电相位控制基于转子的旋转位置和相位指令确定要通电的相位，形成6n分辨率三相通电信号的通电信号形成单元和对三相通电进行PWM调制的通电单元信号，根据调制的三相通电信号向每个三相绕组提供电压。

7. 发明授权

US5585218A Photoresist composition containing alkyletherified polyvinylphenol 失效
标题翻译：含有烷基醚化聚乙烯基苯酚的光刻胶组合物
公开(公告)号：US5585218A
公开(公告)日：1996-12-17
申请号：US249237
申请日：1994-05-25
申请人： Yuko Nakano , Naoki Takeyama , Yuji Ueda , Takehiro Kusumoto , Hiromi Oka
发明人： Yuko Nakano , Naoki Takeyama , Yuji Ueda , Takehiro Kusumoto , Hiromi Oka
IPC分类号： G03F7/004 , G03C1/73
CPC分类号： G03F7/0045 , Y10S430/121 , Y10S430/122 , Y10S430/125
摘要： A negative or positive photoresist composition which comprises an alkali soluble resin containing at least one resin selected from the group consisting of a partially alkyletherified polyvinylphenol and a partially alkyletherified hydrogenated polyvinylphenol, a photo-induced acid precursor containing at least a kind of sulfonic acid ester of N-hydroxyimide compounds and crosslinking agent or dissolution inhibitor, and this photoresist composition is excellent in various properties such as heat resistance, film thickness retention, coating property, profile and the like, and further exhibits high sensitivity and high resolution when far ultraviolet rays including excimer laser is used as the light source. It also hardly cause a scam during the developing process.
摘要翻译：一种负性或正性光致抗蚀剂组合物，其包含含有至少一种选自部分烷基醚化的聚乙烯基苯酚和部分烷基醚化的氢化聚乙烯基苯酚的碱溶性树脂，光致酸性前体，其含有至少一种磺酸酯 N-羟基酰亚胺化合物和交联剂或溶解抑制剂，该光致抗蚀剂组合物在耐热性，膜厚保持性，涂布性，轮廓等各种性能方面优异，并且当远紫外线包括准分子激光器被用作光源。在开发过程中也不会造成骗局。

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