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1. 发明授权

US07473377B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07473377B2
公开(公告)日：2009-01-06
申请号：US10959152
申请日：2004-10-07
申请人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
发明人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
IPC分类号： B44C1/22
CPC分类号： G03F7/091 , H01L21/31116 , H01L21/31144 , H01L21/312
摘要： A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
摘要翻译：等离子体处理方法包括制备其表面上具有有机层的工艺对象的步骤，以及用H 2等离子体照射工艺对象以提高有机层的等离子体电阻的步骤。

2. 发明申请

US20050103748A1 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US20050103748A1
公开(公告)日：2005-05-19
申请号：US10959152
申请日：2004-10-07
申请人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
发明人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
IPC分类号： H01L21/311 , H01L21/312 , C23F1/00
CPC分类号： G03F7/091 , H01L21/31116 , H01L21/31144 , H01L21/312
摘要： A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
摘要翻译：等离子体处理方法包括在其表面上制备具有有机层的工艺对象的步骤，以及用H 2 O 3等离子体照射工艺对象以提高有机层的等离子体电阻的步骤。

3. 发明申请

US20050101140A1 Method of plasma etching 审中-公开
标题翻译：等离子体蚀刻方法
公开(公告)号：US20050101140A1
公开(公告)日：2005-05-12
申请号：US10949366
申请日：2004-09-27
申请人： Tomoyo Yamaguchi , Kiwamu Fujimoto , Akinori Kitamura , Jae Jeong , Takashi Fuse , Machiko Obi , Nobuhiro Wada
发明人： Tomoyo Yamaguchi , Kiwamu Fujimoto , Akinori Kitamura , Jae Jeong , Takashi Fuse , Machiko Obi , Nobuhiro Wada
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/461
CPC分类号： H01L21/31116 , H01J37/32165
摘要： A plasma etching method includes the steps of exciting an etching gas introduced in a processing vessel into a plasma, the etching gas including 1,1,1,4,4,5,5,5-octafluoro-2-pentyne, and carrying out a plasma etching on a film on a target object accommodated in the processing vessel via opening patterns of a resist mask on the film. Therefore, it is possible to perform plasma etching having a high selectivity to resist and/or suppressing the etch stop.
摘要翻译：等离子体蚀刻方法包括以下步骤：将在处理容器中引入的蚀刻气体激发成等离子体，蚀刻气体包括1,1,1,4,4,5,5,5-八氟-2-戊炔，并进行通过膜上的抗蚀剂掩模的开口图案对容纳在处理容器中的目标物体上的膜上的等离子体蚀刻。因此，可以进行具有高抗蚀性和/或抑制蚀刻停止的高选择性的等离子体蚀刻。

4. 发明申请

US20060027530A1 Etching gas, etching method and etching gas evaluation method 有权
标题翻译：蚀刻气体，蚀刻方法和蚀刻气体评估方法
公开(公告)号：US20060027530A1
公开(公告)日：2006-02-09
申请号：US11199085
申请日：2005-08-09
申请人： Masanobu Honda , Akinori Kitamura , Kazuya Nagaseki
发明人： Masanobu Honda , Akinori Kitamura , Kazuya Nagaseki
IPC分类号： C03C25/68 , C09K13/08
CPC分类号： C03C15/00 , C03C17/23 , C03C2217/213 , C03C2218/33 , C09K13/08
摘要： An etching gas for etching an oxide film formed on a substrate, includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a straight-chain saturated fluorocarbon-based gas expressed by CxF(2x+2) (x represents a natural number of 5 or larger). The additive gas is C5F12 gas, C6F14 gas or C7F16 gas. Another etching gas includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a cyclic saturated fluorocarbon-based gas expressed by CxF2x(x represents a natural number of 5 or larger). In this case, the additive gas is C5F10gas or C6F12 gas.
摘要翻译：用于蚀刻形成在基板上的氧化膜的蚀刻气体包括由不饱和氟烃类气体构成的主气体; 和由C x2（2x + 2）表示的直链饱和碳氟化合物气体（x表示5以上的自然数）构成的添加气体，。添加气体是C 5 F 12 C 12气体，C 6 F 14气体或C 7 H 12气体， 16气体。另一蚀刻气体包括由不饱和氟烃基气体组成的主气体; 和由C x 2 F 2 X x表示的环状饱和碳氟化合物气体构成的添加气体（x表示5以上的自然数）。在这种情况下，添加气体是C 5 F 10气体或C 6 F 12 N 12气体。

5. 发明授权

US07794616B2 Etching gas, etching method and etching gas evaluation method 有权
标题翻译：蚀刻气体，蚀刻方法和蚀刻气体评估方法
公开(公告)号：US07794616B2
公开(公告)日：2010-09-14
申请号：US11199085
申请日：2005-08-09
申请人： Masanobu Honda , Akinori Kitamura , Kazuya Nagaseki
发明人： Masanobu Honda , Akinori Kitamura , Kazuya Nagaseki
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： C03C15/00 , C03C17/23 , C03C2217/213 , C03C2218/33 , C09K13/08
摘要： An etching gas for etching an oxide film formed on a substrate, includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a straight-chain saturated fluorocarbon-based gas expressed by CXF(2X+2) (x represents a natural number of 5 or larger). The additive gas is C5F12 gas, C6F14 gas or C7F16 gas. Another etching gas includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a cyclic saturated fluorocarbon-based gas expressed by CXF2X (X represents a natural number of 5 or larger). In this case, the additive gas is C5F10 gas or C6F12 gas.
摘要翻译：用于蚀刻形成在基板上的氧化膜的蚀刻气体包括由不饱和氟烃类气体构成的主气体; 和由CXF（2X + 2）表示的直链饱和碳氟化合物气体（x表示5以上的自然数）构成的添加气体。添加气体为C5F12气体，C6F14气体或C7F16气体。另一蚀刻气体包括由不饱和氟烃基气体组成的主气体; 和由CXF2X（X表示5以上的自然数）表示的环状饱和碳氟化合物气体构成的添加气体。在这种情况下，添加气体是C5F10气体或C6F12气体。

6. 发明授权

US07883631B2 Plasma etching method, plasma etching apparatus, control program and computer-readable storage medium 有权
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置，控制程序和计算机可读存储介质
公开(公告)号：US07883631B2
公开(公告)日：2011-02-08
申请号：US11682527
申请日：2007-03-06
申请人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai
发明人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai
IPC分类号： B44C1/22
CPC分类号： H01L21/31116
摘要： A plasma etching method includes the step of performing a plasma etching on a silicon-containing dielectric layer formed on a substrate to be processed by using a plasma, while using an organic layer as a mask. In addition, the plasma is generated from a processing gas at least including a first fluorocarbon gas which is an unsaturated gas; a second fluorocarbon gas which is an aliphatic saturated gas expressed by CmF2m+2 (m=5, 6); and an oxygen gas. Further, a computer-readable storage medium for storing therein a computer executable control program is provided where the control program, when executed, controls a plasma etching apparatus to perform the above plasma etching method.
摘要翻译：等离子体蚀刻方法包括在使用有机层作为掩模的同时，通过使用等离子体对形成在待加工基板上的含硅电介质层进行等离子体蚀刻的步骤。此外，等离子体是从至少包括作为不饱和气体的第一碳氟化合物气体的处理气体产生的; 第二碳氟化合物气体，其为由CmF 2 m + 2（m = 5,6）表示的脂肪族饱和气体。和氧气。此外，提供了一种用于在其中存储计算机可执行控制程序的计算机可读存储介质，其中控制程序在执行时控制等离子体蚀刻装置以执行上述等离子体蚀刻方法。

7. 发明申请

US20070212887A1 PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM 有权
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置，控制程序和计算机可读存储介质
公开(公告)号：US20070212887A1
公开(公告)日：2007-09-13
申请号：US11682527
申请日：2007-03-06
申请人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai
发明人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31116
摘要： A plasma etching method includes the step of performing a plasma etching on a silicon-containing dielectric layer formed on a substrate to be processed by using a plasma, while using an organic layer as a mask. In addition, the plasma is generated from a processing gas at least including a first fluorocarbon gas which is an unsaturated gas; a second fluorocarbon gas which is an aliphatic saturated gas expressed by CmF2m+2 (m=5, 6); and an oxygen gas. Further, a computer-readable storage medium for storing therein a computer executable control program is provided where the control program, when executed, controls a plasma etching apparatus to perform the above plasma etching method.
摘要翻译：等离子体蚀刻方法包括在使用有机层作为掩模的同时，通过使用等离子体对形成在待加工基板上的含硅电介质层进行等离子体蚀刻的步骤。此外，等离子体是从至少包括作为不饱和气体的第一碳氟化合物气体的处理气体产生的; 第二碳氟化合物气体，其是由C m 2 M 2 m + 2（m = 5,6）表示的脂肪族饱和气体。和氧气。此外，提供了一种用于在其中存储计算机可执行控制程序的计算机可读存储介质，其中控制程序在执行时控制等离子体蚀刻装置以执行上述等离子体蚀刻方法。

8. 发明授权

US07655572B2 Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, control program and computer storage medium 失效
标题翻译：半导体器件制造方法，半导体器件制造装置，控制程序和计算机存储介质
公开(公告)号：US07655572B2
公开(公告)日：2010-02-02
申请号：US11551495
申请日：2006-10-20
申请人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
发明人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： Photoresist film is used as a mask, plasma etching of a SiO2 film is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5, and y) is used for the plasma etching. C4F4O gas and C4F6O gas are used for the unsaturated fluorocarbon gas containing oxygen, for example.
摘要翻译：将光致抗蚀剂膜用作掩模，对光致抗蚀剂膜选择性地进行SiO 2膜的等离子体蚀刻，形成孔。包含用C x F y O表示的含有不饱和碳氟化合物气体的蚀刻气体（y / x为整数×，为4或5，y为1-1.5）用于等离子体蚀刻。例如，C4F4O气体和C4F6O气体用于含氧的不饱和碳氟化合物气体。

9. 发明申请

US20070090093A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM 失效
标题翻译：半导体器件制造方法，半导体器件制造设备，控制程序和计算机存储介质
公开(公告)号：US20070090093A1
公开(公告)日：2007-04-26
申请号：US11551495
申请日：2006-10-20
申请人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
发明人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
IPC分类号： C23F1/00 , H01L21/461 , H01L21/306 , B44C1/22
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： Photoresist film is used as a mask, plasma etching of a SiO2 film is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5, and y) is used for the plasma etching. C4F4O gas and C4F6O gas are used for the unsaturated fluorocarbon gas containing oxygen, for example.
摘要翻译：将光致抗蚀剂膜用作掩模，对光致抗蚀剂膜选择性地进行SiO 2膜的等离子体蚀刻，形成孔。包含用C x F y O表示的含有不饱和碳氟化合物气体的蚀刻气体（y / x为整数×，为4或5，y为1-1.5）用于等离子体蚀刻。用于含氧的不饱和碳氟化合物气体的C 4 N 4 O 4 O 4和C 4 F 6 O O气体，例如。

10. 发明申请

US20070197040A1 PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置，控制程序和计算机可读存储介质
公开(公告)号：US20070197040A1
公开(公告)日：2007-08-23
申请号：US11677736
申请日：2007-02-22
申请人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Kumiko Yamazaki
发明人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Kumiko Yamazaki
IPC分类号： H01L21/461 , H01L21/302 , C23F1/00
CPC分类号： H01L21/31116
摘要： A plasma etching method includes the step of performing a plasma etching on a silicon-containing dielectric layer formed on a substrate to be processed by using a plasma, while using an organic layer as a mask. The plasma is generated from a processing gas at least including a C6F6 gas, a rare gas and an oxygen gas, and a flow rate ratio of the oxygen gas to the C6F6 gas (an oxygen gas flow rate/a C6F6 gas flow rate) is set to be about 2.8 to 3.3.
摘要翻译：等离子体蚀刻方法包括在使用有机层作为掩模的同时，通过使用等离子体对形成在待加工基板上的含硅电介质层进行等离子体蚀刻的步骤。等离子体由至少包括C 6 6 F 6气体，稀有气体和氧气的处理气体以及氧气与 C 6 6 C 6气体（氧气流量/ C 6 6 F 6气体流量）设定在2.8到3.3左右。

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