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    • 1. 发明申请
    • THIN-FILM DEVICE
    • 薄膜器件
    • US20100246092A1
    • 2010-09-30
    • US12727549
    • 2010-03-19
    • Akira SHIBUEYoshihiko YanoHitoshi SaitaKenji Horino
    • Akira SHIBUEYoshihiko YanoHitoshi SaitaKenji Horino
    • H01G4/06
    • H01G4/33H01G4/232H01G4/30H01L28/40
    • A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.
    • 薄膜器件包括由金属制成的基极,第一介电层,第一内部电极,第二电介质层,第二内部电极和第三电介质层。 设T1为与多个电介质层中的基极接触的最低的第一电介质层的厚度,Tmin为除了第一电介质层之外的多个电介质层中最薄的电介质层的厚度,T1> Tmin。 由于基极的表面粗糙度和安装在最下层电介质层上的内电极的表面粗糙度,使得第一电介质层比其他电介质层中最薄的电介质层的电介质层增加了从金属表面突出的金属部分之间的距离, 从而减少漏电流。
    • 2. 发明授权
    • Thin-film device
    • 薄膜装置
    • US08218287B2
    • 2012-07-10
    • US12727549
    • 2010-03-19
    • Akira ShibueYoshihiko YanoHitoshi SaitaKenji Horino
    • Akira ShibueYoshihiko YanoHitoshi SaitaKenji Horino
    • H01G4/06
    • H01G4/33H01G4/232H01G4/30H01L28/40
    • A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.
    • 薄膜器件包括由金属制成的基极,第一介电层,第一内部电极,第二电介质层,第二内部电极和第三电介质层。 设T1为与多个电介质层中的基极接触的最低的第一电介质层的厚度,Tmin为除了第一电介质层之外的多个电介质层中最薄的电介质层的厚度,T1> Tmin。 由于基极的表面粗糙度和安装在最下层电介质层上的内电极的表面粗糙度,使得第一电介质层比其他电介质层中最薄的电介质层的电介质层增加了从金属表面突出的金属部分之间的距离, 从而减少漏电流。