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1. 发明授权

US4361654A Porcelain enamel frit for sheet iron ground coat 失效
标题翻译：瓷釉玻璃料用于铁皮磨面
公开(公告)号：US4361654A
公开(公告)日：1982-11-30
申请号：US290182
申请日：1981-08-05
申请人： Akira Ohmura , Tadashi Nakano
发明人： Akira Ohmura , Tadashi Nakano
IPC分类号： C03C3/064 , C03C3/066 , C03C3/089 , C03C3/091 , C03C3/097 , C03C8/02 , C03C8/04 , C03C8/08 , C03C7/02 , C03C3/08
CPC分类号： C03C8/02 , C03C8/04 , C03C8/08 , C03C2207/02
摘要： A porcelain enamel frit for sheet iron ground coat is disclosed, which contains neither fluorine nor fluorine compound, but has excellent firing property, and can be worked into sheet iron enamel having high gloss and adherence and low surface roughness. The frit consists of 100 parts of a main component and 7-42 parts of an auxiliary component, said main component consisting of 30-73 parts of SiO.sub.2 or a mixture of SiO.sub.2 and at least one of TiO.sub.2, ZrO.sub.2 and SnO.sub.2, 8-45 parts of B.sub.2 O.sub.3, and 8-41 parts of Na.sub.2 O or a mixture of Na.sub.2 O and at least one of Li.sub.2 O and K.sub.2 O, and said auxiliary component consisting of not more than 12 parts of Al.sub.2 O.sub.3, 1-22 parts of at least one of CaO, Bao, ZnO, MgO and SrO, from more than 0 part to 7 parts of MoO.sub.3 or a mixture of MoO.sub.3 and at least one of V.sub.2 O.sub.5, P.sub.2 O.sub.5 and Sb.sub.2 O.sub.3, and 0.5-10 parts of at least one of CoO, NiO, CuO, MnO.sub.2 and Fe.sub.2 O.sub.3.
摘要翻译：公开了一种不含氟和氟化合物，但具有优异的焙烧性能的瓷釉料玻璃料，可以加工成具有高光泽度和粘附性以及低表面粗糙度的片状铁搪瓷。玻璃料由100份主成分和7-42份辅助成分组成，所述主成分由30-73份SiO 2或SiO 2与TiO 2，ZrO 2和SnO 2中的至少一种组成，8-45 B 2 O 3的部分，Na 2 O的8〜41份，或Na 2 O与Li 2 O和K 2 O的至少一种的混合物，所述的辅助成分由不超过12份的Al 2 O 3，1-22份CaO， BaO，ZnO，MgO和SrO，MoO 3的0份〜7份，MoO 3与V 2 O 5，P 2 O 5，Sb 2 O 3中的至少一种的混合物，以及0.5〜10份的CoO，NiO，CuO， MnO2和Fe2O3。

2. 发明授权

US6015457A Stable inorganic polymers 失效
标题翻译：稳定的无机聚合物
公开(公告)号：US6015457A
公开(公告)日：2000-01-18
申请号：US39289
申请日：1998-03-12
申请人： Roger Y. Leung , Tadashi Nakano
发明人： Roger Y. Leung , Tadashi Nakano
IPC分类号： C08G77/12 , H01L21/312 , C08G77/04
CPC分类号： H01L21/312 , C08G77/12
摘要： Processes for producing poly (hydrido siloxane) copolymers and processes for producing solutions of such copolymers for coating semiconductor substrates are provided. The copolymers have the general formula: (HSiO.sub.1.5).sub.a (HSiO(OR)).sub.b (SiO.sub.2).sub.c, wherein R is a mixture of H and an alkyl group having between 1 and 4 carbon atoms; a+b+c=1; 0.5
摘要翻译：制备聚（羟基硅氧烷）共聚物的方法和用于制备用于涂覆半导体衬底的这种共聚物的溶液的方法。共聚物具有以下通式：（HSiO1.5）a（HSiO（OR））b（SiO 2）c，其中R是H和具有1至4个碳原子的烷基的混合物; a + b + c = 1; 0.5

3. 发明授权

US5300321A Process for depositing titanium nitride film by CVD 失效
标题翻译：通过CVD沉积氮化钛膜的工艺
公开(公告)号：US5300321A
公开(公告)日：1994-04-05
申请号：US056768
申请日：1993-05-04
申请人： Tadashi Nakano , Tomohiro Ohta
发明人： Tadashi Nakano , Tomohiro Ohta
IPC分类号： C23C16/34 , C23C16/00
CPC分类号： C23C16/34
摘要： A process which is capable of depositing a titanium nitride film of a high quality at a high deposition rate by low temperature chemical vapor deposition is provided. The titanium nitride film is deposited using a gas source comprising a compound of the general formula:A.sub.n B.sub.m Tiwherein n and m are independently selected from integers of from 1 to 3 provided that sum of n and m is equal to or smaller than 4; A is selected from a cyclic hydrocarbon group and a nitrogen-containing heterocyclic group which is bonded to the titanium by .pi. electron; and B is an alkylamine derivative group containing a nitrogen atom which is directly bonded to the titanium. The film deposition process of the invention is highly useful in LSI fabrication.
摘要翻译：提供了一种能够通过低温化学气相沉积以高沉积速率沉积高质量的氮化钛膜的方法。使用包含以下通式的化合物的气体源沉积氮化钛膜：AnBmTi其中n和m独立地选自1至3的整数，条件是n和m的和等于或小于4; A选自环状烃基和通过（pi）电子与钛结合的含氮杂环基; B是含有与钛直接结合的氮原子的烷基胺衍生物基团。本发明的成膜方法在LSI制造中是非常有用的。

4. 发明授权

US09863027B2 Black-plated steel sheet 有权
公开(公告)号：US09863027B2
公开(公告)日：2018-01-09
申请号：US14395521
申请日：2012-06-29
申请人： Tadashi Nakano , Masaya Yamamoto , Hirofumi Taketsu
发明人： Tadashi Nakano , Masaya Yamamoto , Hirofumi Taketsu
IPC分类号： B32B15/08 , C23C2/06 , B32B15/095 , C23C8/00 , C23C8/16 , C22C18/04 , C23C28/00 , C23C22/73 , C23C22/83
CPC分类号： C23C2/06 , B32B15/095 , B32B2250/03 , C22C18/04 , C23C8/00 , C23C8/16 , C23C22/73 , C23C22/83 , C23C28/00 , Y10T428/12535 , Y10T428/12549 , Y10T428/12569 , Y10T428/12583 , Y10T428/1259 , Y10T428/12611 , Y10T428/12667
摘要： A black-plated steel sheet has a Zn-plating layer containing molten Al and Mg, containing Al in the amount of 1.0-22.0 mass %, containing Mg in the amount of 1.3-10.0 mass %, and having a Zn black oxide distributed in a lamella pattern in the plating layer. The Zn black oxide is a Zn oxide derived from a Zn2Mg phase. The brightness of the surface of the Zn-plating layer containing the molten Al and Mg has an L* value of 60 or less.

5. 发明授权

US09082860B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09082860B2
公开(公告)日：2015-07-14
申请号：US13425448
申请日：2012-03-21
申请人： Tadashi Nakano , Mai Sugikawa , Kosei Noda
发明人： Tadashi Nakano , Mai Sugikawa , Kosei Noda
IPC分类号： H01L29/786 , H01L29/49
CPC分类号： H01L29/7869 , H01L29/0684 , H01L29/24 , H01L29/42364 , H01L29/42384 , H01L29/4908 , H01L29/78603 , H01L29/78606
摘要： A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.
摘要翻译：提供了一种其金属氧化物中的氧空位减小的具有稳定的电特性的半导体器件。半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的第一金属氧化物膜，与第一金属氧化物膜接触的源电极和漏极，以及钝化膜在源电极和漏电极上。第一绝缘膜，第二金属氧化物膜和第二绝缘膜依次层叠在钝化膜中。

6. 发明授权

US09069133B2 Anti-reflective coating for photolithography and methods of preparation thereof 有权
标题翻译：用于光刻的抗反射涂层及其制备方法
公开(公告)号：US09069133B2
公开(公告)日：2015-06-30
申请号：US10495686
申请日：2002-11-12
申请人： Teresa Baldwin , Joseph Kennedy , Nancy Iwamoto , Tadashi Nakano , William Bedwell , Jason Stuck , Arlene Suedemeyer , Mello Hebert
发明人： Teresa Baldwin , Joseph Kennedy , Nancy Iwamoto , Tadashi Nakano , William Bedwell , Jason Stuck , Arlene Suedemeyer , Mello Hebert
IPC分类号： C08G77/26 , G02B5/23 , C03C17/00 , C03C17/30 , C08G77/04 , C08G77/12 , C08K5/00 , C09D183/04 , C09D183/06 , C09D183/08 , G03F7/09 , H01L21/027
CPC分类号： G02B5/23 , C03C17/008 , C03C17/30 , C08G77/04 , C08G77/12 , C08K5/0008 , C09D183/04 , C09D183/06 , C09D183/08 , G03F7/091 , H01L21/0276 , Y10T428/31663 , C08L83/04 , C08L2666/28
摘要： Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.
摘要翻译：用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种封端剂，至少一种流平剂，至少一种催化剂，至少一种替代溶剂，至少一种pH调节剂和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。合适的吸收化合物是可以在光刻中使用的波长如365nm，248nm，193nm和157nm的那些吸收化合物。

7. 外观设计

USD669010S1 Wheel 有权
公开(公告)号：USD669010S1
公开(公告)日：2012-10-16
申请号：US29424961
申请日：2012-06-18
申请人： Tadashi Nakano
设计人： Tadashi Nakano

8. 发明授权

US06524657B2 Solvent systems for polymeric dielectric materials 失效
公开(公告)号：US06524657B2
公开(公告)日：2003-02-25
申请号：US10143039
申请日：2002-05-07
申请人： Oana M. Leonte , Tadashi Nakano , Kelly M. Beres , Kreisler Lau
发明人： Oana M. Leonte , Tadashi Nakano , Kelly M. Beres , Kreisler Lau
IPC分类号： B05D136
CPC分类号： H01L21/02118 , C08J3/095 , H01L21/02126 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/312 , Y10T428/31504
摘要： Aromatic aliphatic ether solvents, such as anisole, methylanisole, and phenetole, have been found useful in formulating coating solutions of polymeric dielectric materials and as a clean up solvent in the coating process. A process for forming a dielectric film on a substrate includes depositing a coating solution of a dielectric material in a formulation solvent onto a surface of the substrate and depositing an aromatic aliphatic ether solvent onto an edge portion of the surface of the substrate. The process is used to form films of dielectric materials including arylene ether dielectric polymers, hydridosiloxane resins, organohydridosiloxane resins, spin-on-glass materials, partially hydrolyzed and partially condensed alkoxysilane compositions which are cured to form a nanoporous dielectric silica material, and poly(perhydrido)silazanes.

9. 发明授权

US06423651B1 Insulating film of semiconductor device and coating solution for forming insulating film and method of manufacturing insulating film 失效
标题翻译：用于形成绝缘膜的半导体器件和涂层溶液的绝缘膜和制造绝缘膜的方法
公开(公告)号：US06423651B1
公开(公告)日：2002-07-23
申请号：US08492108
申请日：1995-08-29
申请人： Tadashi Nakano , Kyoji Tokunaga
发明人： Tadashi Nakano , Kyoji Tokunaga
IPC分类号： H01L21302
CPC分类号： C09D183/04 , H01L21/316
摘要： It is an object to provide an insulating film which enables not only to obtain a good film quality but to achieve an excellent filling property, thick film formation and planarization simultaneously, and to provide an insulating film forming coating solution for forming the insulating film, and to provide a method of manufacturing the insulating film. An insulating film forming coating solution containing as a main component a solution of a polymer obtained by co-hydrolysis of trialkoxysilane expressed by a general formula, SiH(OR)3, methyltrialkoxysilane expressed by a general formula, SiCH3(OR)3, and tetraalkoxysilane expressed by a general formula, Si(OR)4 is coated on a semiconductor substrate (1) having a step portion, and after it is heated and dried in an inert gas atmosphere, an insulating film (6) which is composed of a silane-derived compound expressed by a general formula, SiHx(CH3)yO2−(x+y)/2, where, 0
摘要翻译：本发明的目的是提供一种绝缘膜，其不仅能够获得良好的膜质量，而且能够同时实现优异的填充性，厚膜形成和平坦化，并且提供用于形成绝缘膜的绝缘膜形成用涂布液，提供一种绝缘膜的制造方法。一种绝缘膜形成用涂布液，其以作为主要成分的由通式SiH（OR）3表示的三烷氧基硅烷，由一般式表示的甲基三烷氧基硅烷，通式SiCH 3（OR）3和由通式Si（OR）4表示的四烷氧基硅烷）涂覆在具有阶梯部分的半导体衬底（1）上，在惰性气体气氛中加热干燥后，由通式SiHx（CH3）yO2-（x + y）/ 2表示的硅烷衍生化合物组成的膜（6），其中0

10. 发明授权

US06368661B2 Method for repair coating 失效
标题翻译：维修方法
公开(公告)号：US06368661B2
公开(公告)日：2002-04-09
申请号：US09783601
申请日：2001-02-15
申请人： Tadashi Nakano
发明人： Tadashi Nakano
IPC分类号： B05D310
CPC分类号： C09D163/00
摘要： The present invention provides a method for repair coating characterized by applying an epoxy-polyamine resin base coating composition comprising an epoxy resin having at least one epoxy resin in a molecule and an amine base curing agent as resinous components on a deteriorated coating film which is selected from a tar epoxy resin coating film, a tar urethane resin coating film, a modified epoxy resin coating film, a modified urethane resin coating film, an epoxy-polyamine resin coating film and an epoxy urethane resin coating film and which has a water content of 0.3 to 5% by weight.
摘要翻译：本发明提供一种维修涂层的方法，其特征在于，在分散有至少一种环氧树脂的环氧树脂和胺基固化剂作为树脂成分的环氧 - 多胺树脂基涂料组合物上涂布劣化涂膜，焦油环氧树脂涂膜，焦油聚氨酯树脂涂膜，改性环氧树脂涂膜，改性聚氨酯树脂涂膜，环氧 - 多胺树脂涂膜和环氧聚氨酯树脂涂膜，其含水量为 0.3〜5重量％。

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